公开(公告)号：US06271709B1

公开(公告)日：2001-08-07

申请号：US09453204

申请日：1999-12-03

申请人： Shin Kimura ,  Masahiro Nagasu ,  Satoru Inarida ,  Hideki Miyazaki ,  Katsunori Suzuki

发明人： Shin Kimura ,  Masahiro Nagasu ,  Satoru Inarida ,  Hideki Miyazaki ,  Katsunori Suzuki

IPC分类号： H03K1716

CPC分类号： H03K17/168 ,  H03K17/163

摘要： A gate drive circuit of a voltage drive switching element, which is characterized by control of di/dt and dv/dt when an IGBT is switched by controlling increases in the switching time and loss of the IGBT, includes a drive means for amplifying a signal for controlling the switching operation of a voltage drive switching device including the IGBT, a means for detecting the gate voltage of the IGBT, a voltage decrease (increase) means for slowly decreasing (increasing) the output voltage when the drive means is turned on (off) in the course of time, and a voltage increase (decrease) means for slowly increasing (decreasing) the output voltage. By switching from the voltage decrease (increase) means to the voltage increase (decrease) means according to the detected value of the gate voltage of the IGBT, di/dt and dv/dt are controlled when the IGBT is turned on (off).

摘要翻译： 电压驱动开关元件的栅极驱动电路，其特征在于，通过控制IGBT的切换时间和损耗的切换来切换IGBT时的di / dt和dv / dt的控制，包括用于放大信号的驱动装置 用于控制包括IGBT的电压驱动开关装置的切换操作，用于检测IGBT的栅极电压的装置，用于当驱动装置接通时缓慢降低（增加）输出电压的电压降低（增加）装置（ 关闭），并且电压增加（减小）意味着缓慢增加（降低）输出电压。 通过从IGBT的栅极电压的检测值切换到电压降低（增加）装置到电压增加（减小）的手段，当IGBT导通（关闭）时，di / dt和dv / dt被控制。

公开(公告)号：US06204717B1

公开(公告)日：2001-03-20

申请号：US08651875

申请日：1996-05-21

申请人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

发明人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

IPC分类号： H03K508

CPC分类号： H01L29/866 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7393 ,  H01L29/7395 ,  H03K17/08148 ,  H03K17/0828

摘要： A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking-state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage, whereas a current abruptly flows for values of a voltage greater than the second voltage value. Due to the current-voltage characteristic, energy accumulated in an inductance provided within the circuit is consumed by a differential resistance of the semiconductor circuit or a semiconductor, thereby prevent the occurrence of the electromagnetic noise and the excessively large voltage.

摘要翻译： 半导体电路或半导体器件具有电流 - 电压特性，在半导体电路或半导体器件的阻挡状态下，电流缓慢地流过等于或大于第一电压值但等于或等于 或小于第二电压，而电流突然流过大于第二电压值的电压值。 由于电流 - 电压特性，电路中提供的电感中积累的能量被半导体电路或半导体的差分电阻消耗，从而防止电磁噪声的发生和过大的电压。

公开(公告)号：US07647455B2

公开(公告)日：2010-01-12

申请号：US11105242

申请日：2005-04-13

申请人： Shin Kimura

发明人： Shin Kimura

IPC分类号： G06F12/00 ,  G06F13/00 ,  G06F13/28

CPC分类号： G06F12/0888

摘要： An information processing apparatus for processing an access request to access a recording medium from an application includes the following elements. A setting unit sets a priority unique to the access request from the application or permission information indicating whether or not processing on the access request from the application is permitted. A queue controller stores the access request provided with the priority or the permission information in a queue. An access request processor processes the access request stored in the queue according to the priority or the permission information.

摘要翻译： 一种用于处理从应用程序访问记录介质的访问请求的信息处理设备包括以下元件。 设置单元设置来自应用的访问请求唯一的优先级或许可信息，该许可信息指示是否允许对来自应用的访问请求进行处理。 队列控制器将优先级或权限信息提供的访问请求存储在队列中。 访问请求处理器根据优先级或权限信息处理存储在队列中的访问请求。

公开(公告)号：US5905604A

公开(公告)日：1999-05-18

申请号：US907930

申请日：1997-08-11

申请人： Yasuaki Kano ,  Yoshitsugu Taki ,  Toshiya Kurokawa ,  Taketoshi Yamagishi ,  Kyoichi Isomura ,  Shin Kimura

发明人： Yasuaki Kano ,  Yoshitsugu Taki ,  Toshiya Kurokawa ,  Taketoshi Yamagishi ,  Kyoichi Isomura ,  Shin Kimura

IPC分类号： G11B15/68

CPC分类号： G11B15/6835

摘要： A cassette transfer mechanism for transferring a cassette recording medium to and from a cassette accommodating portion for accommodating cassette recording mediums, the cassette transfer mechanism having a unit which stores information in a memory included in the cassette and/or reads information from the same and which has a connector structured to be brought into contact with a memory terminal provided for the cassette recording medium when information is stored in the memory and/or read from the same. The above-mentioned structure enables information to be stored in the memory included in the cassette and/or read from the same without a necessity of loading the cassette recording medium into a drive unit whenever information is stored/read.

摘要翻译： 一种用于将盒式磁带记录介质传送到用于容纳盒式记录介质的盒容纳部分的盒式磁带传送机构，盒式磁带传送机构具有将信息存储在包含在盒中的存储器中的单元和/或从其中读取信息， 具有连接器，其被构造成当信息被存储在存储器中和/或从其读取时与设置在盒式磁带记录介质上的存储器端子接触。 上述结构使信息能够存储在包含在盒中的存储器和/或从其中读取，而不需要每当存储/读取信息时将盒式磁带记录介质加载到驱动单元中。

公开(公告)号：US5731970A

公开(公告)日：1998-03-24

申请号：US473937

申请日：1995-06-07

申请人： Mutsuhiro Mori ,  Ryuichi Saito ,  Shin Kimura ,  Syuuji Saitoo ,  Kiyoshi Nakata ,  Akira Horie ,  Yoshihiko Koike ,  Shigeki Sekine

发明人： Mutsuhiro Mori ,  Ryuichi Saito ,  Shin Kimura ,  Syuuji Saitoo ,  Kiyoshi Nakata ,  Akira Horie ,  Yoshihiko Koike ,  Shigeki Sekine

IPC分类号： H01L23/04 ,  H01L23/24 ,  H01L25/07 ,  H02M7/00 ,  H02M7/48 ,  H02M7/487 ,  H03K17/0814 ,  H02M7/5387

CPC分类号： H02M7/487 ,  H01L23/04 ,  H01L23/24 ,  H01L24/49 ,  H01L25/072 ,  H02M7/003 ,  H03K17/08148 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01055 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/351 ,  Y10S257/925

摘要： An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each module forms one arm portion of the inverter. Lifetimes of the diodes and the switching devices are set in a manner to equalize losses in the inverter. Preferably, insulated gate bipolar transistors (IGBTs) formed by diffusion are used as the switching devices since the lifetimes of these devices can easily be adjusted to optimize design of the inverter.

摘要翻译： 逆变器装置包括多个模块，每个模块由具有第一开关装置和第一二极管的并联电路的串联电路以及第二开关装置和第二二极管的并联电路形成，允许尺寸减小，可靠性高 ，高频开关和低噪声。 每个模块形成逆变器的一个臂部分。 二极管和开关器件的寿命设定为使逆变器的损耗相等。 优选地，由扩散形成的绝缘栅双极晶体管（IGBT）用作开关器件，因为这些器件的寿命可以容易地被调整以优化逆变器的设计。

公开(公告)号：US5210479A

公开(公告)日：1993-05-11

申请号：US390378

申请日：1989-08-07

申请人： Shin Kimura ,  Norikazu Tokunaga ,  Nobuyoshi Mutoh ,  Satoshi Ibori ,  Shuuji Musha ,  Yasuo Matsuda ,  Yutaka Suzuki

发明人： Shin Kimura ,  Norikazu Tokunaga ,  Nobuyoshi Mutoh ,  Satoshi Ibori ,  Shuuji Musha ,  Yasuo Matsuda ,  Yutaka Suzuki

IPC分类号： H01L27/02 ,  H02P27/08 ,  H03K17/082 ,  H03K17/567

CPC分类号： H02P27/08 ,  H01L27/0248 ,  H03K17/0828 ,  H03K17/567

摘要： An ON holding circuit is provided which outputs a signal which identifies an ON state of an insulated gate transistor to a gate voltage input circuit, and inhibits the gate voltage input circuit from being responsive to an input signal which identifies an OFF state of the insulated gate transistor when an overcurrent adjusting circuit operates continuously.

公开(公告)号：US06169672A

公开(公告)日：2001-01-02

申请号：US09202924

申请日：1998-12-23

申请人： Shin Kimura ,  Tsutomu Yatsuo ,  Takayuki Iwasaki

发明人： Shin Kimura ,  Tsutomu Yatsuo ,  Takayuki Iwasaki

IPC分类号： H02H7122

CPC分类号： H02M1/34 ,  H02M7/519 ,  H02M2001/344 ,  H02M2001/346 ,  H03K17/08144 ,  Y02B70/1483 ,  Y02B70/1491

摘要： A power converting apparatus comprising a group of semiconductor switches and DC terminals electrically connected to the group of semiconductor switches, in which a clamping circuit is connected to the semiconductor switches or the DC terminals. Otherwise, a diode having a wide band gap is connected in parallel with a snubber diode or a snubber capacitor of a snubber circuit connected in parallel with the semiconductor switches. With such arrangement, an overvoltage or oscillating voltage impressed on the semiconductor switches is suppressed.

摘要翻译： 一种电力转换装置，包括电连接到半导体开关组的半导体开关和DC端子组，其中钳位电路连接到半导体开关或DC端子。 否则，具有宽带隙的二极管与与半导体开关并联连接的缓冲电路的缓冲二极管或缓冲电容器并联连接。 通过这种布置，抑制了对半导体开关施加的过电压或振荡电压。

公开(公告)号：US5929519A

公开(公告)日：1999-07-27

申请号：US979778

申请日：1997-11-26

申请人： Mutsuhiro Mori ,  Ryuichi Saito ,  Shin Kimura ,  Syuuji Saitoo ,  Kiyoshi Nakata ,  Akira Horie ,  Yoshihiko Koike ,  Shigeki Sekine

发明人： Mutsuhiro Mori ,  Ryuichi Saito ,  Shin Kimura ,  Syuuji Saitoo ,  Kiyoshi Nakata ,  Akira Horie ,  Yoshihiko Koike ,  Shigeki Sekine

IPC分类号： H01L23/04 ,  H01L23/24 ,  H01L25/07 ,  H02M7/00 ,  H02M7/48 ,  H02M7/487 ,  H03K17/0814 ,  H01L23/34

CPC分类号： H02M7/487 ,  H01L23/04 ,  H01L23/24 ,  H01L24/49 ,  H01L25/072 ,  H02M7/003 ,  H03K17/08148 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01055 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/351 ,  Y10S257/925

摘要： An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each of the semiconductor modules includes a plurality of switching device chips and at least one diode chip formed on a metal substrate. Electrode plates are provided in locations of the module adjacent to the switching device chips and the diode chips to facilitate connection of the electrodes of the respective chips to one another and to the outside of the module.

摘要翻译： 逆变器装置包括多个模块，每个模块由具有开关装置和第一二极管的并联电路的串联电路以及第二开关装置和第二二极管的并联电路形成，允许减小尺寸，高可靠性， 高频开关和低噪声。 每个半导体模块包括多个开关器件芯片和形成在金属衬底上的至少一个二极管芯片。 电极板设置在与开关器件芯片和二极管芯片相邻的模块的位置处，以便于将各个芯片的电极彼此连接并连接到模块的外部。

公开(公告)号：US5801936A

公开(公告)日：1998-09-01

申请号：US480399

申请日：1995-06-07

申请人： Mutsuhiro Mori ,  Ryuichi Saito ,  Shin Kimura ,  Kiyoshi Nakata ,  Syuuji Saitoo ,  Akira Horie ,  Yoshihiko Koike ,  Shigeki Sekine

发明人： Mutsuhiro Mori ,  Ryuichi Saito ,  Shin Kimura ,  Kiyoshi Nakata ,  Syuuji Saitoo ,  Akira Horie ,  Yoshihiko Koike ,  Shigeki Sekine

IPC分类号： H01L21/331 ,  H01L23/04 ,  H01L23/18 ,  H01L23/24 ,  H01L25/065 ,  H01L25/07 ,  H01L25/16 ,  H02M7/00 ,  H02M7/48 ,  H02M7/487 ,  H03K17/0814 ,  H02M7/5387

CPC分类号： H03K17/08148 ,  H01L23/04 ,  H01L23/18 ,  H01L23/24 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/16 ,  H01L25/18 ,  H01L29/66333 ,  H02M7/003 ,  H02M7/487 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01055 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/351

摘要： An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise.

摘要翻译： 逆变器装置包括多个模块，每个模块由具有第一开关装置和第一二极管的并联电路的串联电路以及第二开关装置和第二二极管的并联电路形成，允许尺寸减小，可靠性高 ，高频开关和低噪声。

公开(公告)号：US4063270A

公开(公告)日：1977-12-13

申请号：US687745

申请日：1976-05-18

申请人： Shin Kimura ,  Yoshio Terasawa

发明人： Shin Kimura ,  Yoshio Terasawa

IPC分类号： H01L29/74

CPC分类号： H01L29/7428

摘要： A semiconductor controlled rectifier device comprises a semiconductor substrate consisting of a plurality of layers of alternately different conductivity types, in which the outermost layer exposed at one of the principal surfaces is divided into a first portion providing a main thyristor, and a second portion having an area smaller than that of the first portion and providing an auxiliary thyristor. In the device, the second portion of the outermost layer of the substrate comprises a first region participating in the turn-on of the device, and a second region acting to increase the minimum gate current necessary to turn on the device, thereby increasing the minimum gate current necessary to turn on the auxiliary thyristor without appreciably increasing the gate current required for turning on the auxiliary thyristor and without reducing the switching power capability of the device, so that mal-firing due to noise current induced between the gate and the cathode can be prevented.

摘要翻译： 半导体可控整流器件包括由交替不同导电类型的多个层组成的半导体衬底，其中在一个主表面上露出的最外层被分成提供主晶闸管的第一部分，以及具有 面积小于第一部分的面积，并提供辅助晶闸管。 在器件中，衬底的最外层的第二部分包括参与器件接通的第一区域和用于增加开启器件所需的最小栅极电流的第二区域，从而增加最小值 导通辅助晶闸管所需的栅极电流，而不会明显增加导通辅助晶闸管所需的栅极电流，并且不降低器件的开关功率能力，从而在栅极和阴极之间引起的噪声电流引起的不良点火 被阻止