摘要:
An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each module forms one arm portion of the inverter. Lifetimes of the diodes and the switching devices are set in a manner to equalize losses in the inverter. Preferably, insulated gate bipolar transistors (IGBTs) formed by diffusion are used as the switching devices since the lifetimes of these devices can easily be adjusted to optimize design of the inverter.
摘要:
An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each of the semiconductor modules includes a plurality of switching device chips and at least one diode chip formed on a metal substrate. Electrode plates are provided in locations of the module adjacent to the switching device chips and the diode chips to facilitate connection of the electrodes of the respective chips to one another and to the outside of the module.
摘要:
An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise.
摘要:
An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each module forms one arm portion of the inverter. Lifetimes of the diodes and the switching devices are set in a manner to equalize losses in the inverter. Preferably, insulated gate bipolar transistors (IGBTs) formed by diffusion are used as the switching devices since the lifetimes of these devices can easily be adjusted to optimize design of the inverter.
摘要:
A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要:
A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要翻译:一种半导体器件,其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上,所述绝缘体衬底在主表面上形成多个电极图案,所述半导体元件的每个电极电连接到所述电极图案, 绝缘体基板的另一表面被结合到散热基底上,散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件,将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧,散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数,小于半导体元件的线膨胀系数的3倍,导热系数 大于100 W / mK,半音 电感元件布置在至少一个电极表面上,并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。
摘要:
A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要翻译:一种半导体器件,其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上,所述绝缘体衬底在主表面上形成多个电极图案,所述半导体元件的每个电极电连接到所述电极图案, 绝缘体基板的另一表面被结合到散热基底上,散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件,将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧,散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数,小于半导体元件的线膨胀系数的3倍,导热系数 大于100 W / mK,半音 电感元件布置在至少一个电极表面上,并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。
摘要:
An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress can escape. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board serving as a current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and cracks of the cover plate.
摘要:
An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress can escape. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board serving as a current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and cracks of the cover plate.
摘要:
An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress may be escaped. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board served as current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and crack of the cover plate.