公开(公告)号：US5865887A

公开(公告)日：1999-02-02

申请号：US896109

申请日：1997-07-17

申请人： Witawat Wijaranakula ,  Akihiko Tamura

发明人： Witawat Wijaranakula ,  Akihiko Tamura

IPC分类号： C30B15/30 ,  C30B15/00 ,  C30B15/14 ,  C30B15/22 ,  C30B15/20

CPC分类号： C30B15/14 ,  C30B15/00 ,  C30B15/22 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1088

摘要： An apparatus and method for growing large diameter silicon crystals using the Czochralski (Cz) method, wherein the neck section of the crystal is significantly strengthened to eliminate the risk of breakage in the neck section, by providing a heat shield assembly which is located adjacent to the neck section and ascends in conjunction therewith to force the cooling gas directly onto the neck section of the silicon ingot.

摘要翻译： 一种使用切克劳斯基（Cz）法生长大直径硅晶体的装置和方法，其中通过提供位于邻近的晶体管的隔热组件，晶体的颈部部分被显着地加强以消除颈部断裂的危险。 颈部部分并与其一起上升，以将冷却气体直接压在硅锭的颈部上。

公开(公告)号：US5486898A

公开(公告)日：1996-01-23

申请号：US272331

申请日：1994-07-08

申请人： Yozo Fujii ,  Hiroyuki Moriguchi ,  Yoshikazu Ikunami ,  Masahiko Matsunawa ,  Akihiko Tamura ,  Kazuo Yasuda ,  Tadashi Miwa ,  Tatsumi Horiuchi ,  Tadao Kishimoto ,  Yoshihide Fujimaki ,  Hiroyuki Takagiwa ,  Takashi Tamura

发明人： Yozo Fujii ,  Hiroyuki Moriguchi ,  Yoshikazu Ikunami ,  Masahiko Matsunawa ,  Akihiko Tamura ,  Kazuo Yasuda ,  Tadashi Miwa ,  Tatsumi Horiuchi ,  Tadao Kishimoto ,  Yoshihide Fujimaki ,  Hiroyuki Takagiwa ,  Takashi Tamura

IPC分类号： G03G15/01 ,  G03G21/18 ,  G03G15/00

CPC分类号： G03G21/1807 ,  G03G15/01 ,  G03G21/1623 ,  G03G21/1647 ,  G03G21/1671 ,  G03G21/1832 ,  G03G2221/1603 ,  G03G2221/1609 ,  G03G2221/1612 ,  G03G2221/1675 ,  G03G2221/1853

摘要： In a color image forming apparatus, an image retainer, a charger, a plurality of developing devices and a cleaner are made in one unit. The unit is dismountably supported in a housing so that the unit can be moved out from a first position at which the unit is set in the housing to a second position at which jam disposition is conducted. When the unit means is placed at the second position, a part of the apparatus is used to cover the image retaining surface at the transfer section.

摘要翻译： 在彩色图像形成装置中，图像保持器，充电器，多个显影装置和清洁器被制成一个单元。 该单元可拆卸地支撑在壳体中，使得该单元可以从设置在壳体中的单元的第一位置移动到进行卡纸处置的第二位置。 当单元装置放置在第二位置时，该装置的一部分用于覆盖转印部分的图像保持表面。

公开(公告)号：US4354763A

公开(公告)日：1982-10-19

申请号：US210138

申请日：1980-11-24

申请人： Junichi Koiso ,  Akihiko Tamura ,  Isao Ikemoto

发明人： Junichi Koiso ,  Akihiko Tamura ,  Isao Ikemoto

IPC分类号： G03G15/08 ,  G03G15/09

CPC分类号： G03G15/0822 ,  G03G2215/0819

摘要： An improved developing device includes a rotatable sleeve, a reservoir from which developer is available for image development, a hopper containing fresh replenishment toner, a plate for scraping used developer from the sleeve and for directing it into a conduit in which it is mixed with fresh replenishment toner, and at least an opening in the conduit from which replenished developer comprising used developer mixed with fresh toner is returned to the reservoir in a substantially uniformly mixed condition for use in subsequent image development.

摘要翻译： 改进的显影装置包括可旋转套筒，显影剂可用于图像显影的储存器，包含新鲜补充调色剂的料斗，用于从套筒刮取用过的显影剂并将其引导到其中与新鲜混合的导管中的板 补充调色剂，并且导管中的至少一个开口，从其中补充显影剂包含用新鲜调色剂混合的用过的显影剂以基本上均匀混合的状态返回到储存器中，用于随后的图像显影。

公开(公告)号：US4104065A

公开(公告)日：1978-08-01

申请号：US777124

申请日：1977-03-14

申请人： Noriyoshi Tarumi ,  Akihiko Tamura ,  Masakazu Kokiso

发明人： Noriyoshi Tarumi ,  Akihiko Tamura ,  Masakazu Kokiso

IPC分类号： C01G11/02 ,  C09K3/00 ,  G03G5/08 ,  H01B1/10 ,  H01L31/18 ,  G03G5/04

CPC分类号： H01L31/1828 ,  G03G5/08 ,  Y02E10/543

摘要： A process for preparation of photoconductive powders of a cadmium sulfide type material comprising firing cadmium sulfide type material in an oxygen-containing atmosphere in the presence of a dispersant at a temperature at which the substance to be fired does not melt. The fired substance is water washed in order to remove the dispersant therefrom, if it is water soluble.

摘要翻译： 包括硫化镉类材料的光导粉末的制备方法，其包括在分散剂存在下，在含氧气氛中在待燃烧物质不熔化的温度下烧结硫化镉类材料。 如果水溶性，则将烧制的物质进行水洗以从其中除去分散剂。

公开(公告)号：US08480237B2

公开(公告)日：2013-07-09

申请号：US12388860

申请日：2009-02-19

申请人： Akihiko Tamura

发明人： Akihiko Tamura

IPC分类号： G03B21/14 ,  G03B21/00 ,  H04N3/23

CPC分类号： G03B21/005

摘要： A projector includes a light modulation section provided with a plurality of pixels arranged, and adapted to modulate light from a light source by the pixel, and when executing a keystone distortion correction on an image to be projected on a projection surface in response to an operation of an operation section, a maximum pixel area, which is a maximum area in which an image of the light modulation section is formed, and an image forming area in which the image to be the object of the keystone distortion correction is formed are projected simultaneously on the projection surface.

摘要翻译： 一种投光器，包括配置有多个像素的光调制部，所述多个像素配置成适于调制来自所述像素的光源的光，以及响应于操作而对要投影在投影面上的图像执行梯形失真校正 同时投影作为形成光调制部的图像的最大区域的最大像素面积和形成为梯形失真校正对象的图像的图像形成区域 在投影面上。

公开(公告)号：US07702836B2

公开(公告)日：2010-04-20

申请号：US11886326

申请日：2007-02-16

申请人： Akinari Todoroki ,  Akihiko Tamura ,  Katsuya Tanaka ,  Hiroaki Takada ,  Shinya Honda

发明人： Akinari Todoroki ,  Akihiko Tamura ,  Katsuya Tanaka ,  Hiroaki Takada ,  Shinya Honda

IPC分类号： G06F13/24

CPC分类号： G06F9/526 ,  G06F9/4812

摘要： To provide a processor capable of achieving high processing efficiency by performing the exclusive control between task processing and interrupt handling properly even in a multiprocessor. An interrupt processor that includes a plurality of unit processors, in which at least of the plurality of unit processors is capable of performing interrupt handling requested from the outside is configured such that the unit processor P1 of the unit processors P0 to P3 comprises an purge inhibit flag 106 for causing the unit processor P1 to enter a lock state where the purge of the task is being inhibited, a hardware semaphore unit 13 for inhibiting other unit processors from accessing a predetermined region in memory accessed by the unit processor P1 after the unit processor P1 is brought into the lock state, and an interrupt control unit 11 for inhibiting the interrupt processor from performing the interrupt handling during the execution of exclusive control.

摘要翻译： 为了提供能够通过在多处理器中适当地执行任务处理和中断处理之间的排他性控制来实现高处理效率的处理器。 一种中断处理器，其包括多个单元处理器，其中至少多个单元处理器能够执行从外部请求的中断处理，使得单元处理器P0至P3的单元处理器P1包括清除禁止 标志106，用于使单位处理器P1进入禁止任务清除的锁定状态;硬件信号量单元13，用于在单元处理器之后禁止其他单元处理器访问由单元处理器P1访问的存储器中的预定区域 P1进入锁定状态，以及中断控制单元11，用于在执行排他控制期间禁止中断处理器执行中断处理。

公开(公告)号：US20090209085A1

公开(公告)日：2009-08-20

申请号：US12308990

申请日：2007-06-08

申请人： Akihiko Tamura ,  Konomu Oki

发明人： Akihiko Tamura ,  Konomu Oki

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02032 ,  H01L21/3223 ,  H01L21/3225

摘要： The present invention provides a method for reusing a delaminated wafer, which is a method for applying reprocessing that is at least polishing to a delaminated wafer 17 byproduced when manufacturing an SOI wafer based on an ion implantation delamination method and thereby again reusing the delaminated wafer 17 as a bond wafer 21 in an SOI wafer manufacturing process, wherein, at least, a CZ wafer 11 used as the bond wafer is a low-defect wafer whose entire surface is formed of an N region, and an RTA treatment is carried out in the reprocessing with respect to the delaminated wafer 17 at a higher temperature than a temperature in formation of a thermal oxide film 12 performed with respect to the bond wafer in the SOI wafer manufacturing process. As a result, there can be provided the method for reusing a delaminated wafer which does not induce a bonding failure or a reduction in quality of an SOI layer even if the delaminated wafer byproduced when the CZ wafer having a large diameter of 200 mm or above is used as the bond wafer to fabricate the SOI wafer based on the ion implantation delamination method is repeatedly reused as the bond wafer.

摘要翻译： 本发明提供了一种重新使用分层晶片的方法，其是通过在基于离子注入分层方法制造SOI晶片时通过产生的至少抛光到再分散晶片17的再处理方法，从而再次使用分层晶片17 作为SOI晶片制造工艺中的接合晶片21，其中，至少用作接合晶片的CZ晶片11是整个表面由N区形成的低缺陷晶片，并且RTA处理在 相对于分解晶片17在相对于SOI晶片制造工艺中的接合晶片执行的热氧化膜12的形成温度以上的温度下的再处理。 其结果是，即使在大直径为200mm以上的CZ晶片发生剥离的晶片时，也可以提供不会引起SOI层的接合不良或质量降低的剥离晶片的再利用方法 用作接合晶片以制造SOI晶圆为基础的离子注入分层方法被反复重复使用作为接合晶片。

公开(公告)号：US20060174246A1

公开(公告)日：2006-08-03

申请号：US11338835

申请日：2006-01-25

申请人： Akihiko Tamura ,  Katsuya Tanaka

发明人： Akihiko Tamura ,  Katsuya Tanaka

IPC分类号： G06F9/46

CPC分类号： G06F9/4812 ,  G06F9/485

摘要： A processor comprises a plurality of processor sections that process a task or a thread, wherein the processor includes a dedicated processor section that exclusively processes a predetermined high priority processing, a general-purpose processor section that performs processing other than the predetermined high priority processing and a high priority processing control section that causes the dedicated processor section to process the predetermined high priority processing.

摘要翻译： 处理器包括处理任务或线程的多个处理器部分，其中处理器包括专门处理预定高优先级处理的专用处理器部分，执行除预定高优先级处理之外的处理的通用处理器部分，以及 高优先级处理控制部分，使得专用处理器部分处理预定的高优先级处理。

公开(公告)号：US07073893B2

公开(公告)日：2006-07-11

申请号：US10723619

申请日：2003-11-25

申请人： Yoshio Takeuchi ,  Akihiko Tamura ,  Katsuaki Komatsu ,  Kazuo Asano ,  Katuichi Kawabata

发明人： Yoshio Takeuchi ,  Akihiko Tamura ,  Katsuaki Komatsu ,  Kazuo Asano ,  Katuichi Kawabata

IPC分类号： B41J2/045 ,  B41J29/38

CPC分类号： B41J2/04525 ,  B41J2/04543 ,  B41J2/04581 ,  B41J2202/10

摘要： An inkjet recording head for ejecting ink, having a plurality of piezoelectric sidewalls to form a plurality of ink channels; a piezoelectric bottom plate; and a plurality of electrodes All of the ink channels are divided into two or more groups of ink channels composed of ink channels between which at least one ink channel is sandwiched; wherein an ink ejection operation is performed successively in a time-sharing mode for each of the group of ink channels, while satisfying the condition of |CTC+CTE|≦10 (%); where a crosstalk between ink channels in one group due to a compliance ratio of the sidewalls to the ink in the ink channel is CTC; and a crosstalk between ink channels in one group due to a leak of electric field caused by electric voltage applied to the electrodes is CTE.

摘要翻译： 一种用于喷墨的喷墨记录头，具有多个压电侧壁以形成多个墨通道; 压电底板; 和多个电极所有的墨水通道被分成由墨水通道组成的两组或更多组墨水通道，夹持至少一个墨水通道; 其中，在满足| CTC + CTE |≤10（％）的条件的同时，对于所述一组墨水通道中的每一个，以分时模式连续执行喷墨操作; 其中由于侧壁与油墨通道中的油墨的顺应性比例而导致的一组油墨通道之间的串扰是CTC; 并且由于由施加到电极的电压引起的电场泄漏，一组中的墨通道之间的串扰是CTE。

公开(公告)号：US6059875A

公开(公告)日：2000-05-09

申请号：US227896

申请日：1999-01-11

申请人： Scott M. Kirkland ,  Oleg V. Kononchuk ,  Akihiko Tamura

发明人： Scott M. Kirkland ,  Oleg V. Kononchuk ,  Akihiko Tamura

IPC分类号： C30B15/00 ,  C30B15/04

CPC分类号： C30B29/06 ,  C30B15/04

摘要： A method of introducing nitrogen into a melt for use in producing a nitrogen-doped silicon single crystal by the Czochralski method includes adding a silicon material to a vessel, such as a quartz crucible, adding a nitrogen-containing powder, preferably silicon nitride powder, to the vessel, and heating the vessel for a time sufficient to melt the silicon material and to dissolve the nitrogen-containing in the silicon material in order to form the melt. A nitrogen-doped silicon single crystal is then produced from the melt by the Czochralski method by pulling the silicon single crystal from the melt with a seed crystal.

摘要翻译： 通过Czochralski法将氮引入用于生产氮掺杂硅单晶的熔体中的方法包括将硅材料添加到诸如石英坩埚的容器中，加入含氮粉末，优选氮化硅粉末， 并将该容器加热一段足以熔化硅材料并溶解硅材料中的含氮物质以形成熔体的时间。 然后通过Czochralski法从熔体中通过用晶种从熔体中拉出硅单晶从而产生氮掺杂的硅单晶。