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    Silicon substrate having textured surface, and process for producing same
    12.
    发明授权
    Silicon substrate having textured surface, and process for producing same 有权
    具有纹理表面的硅衬底及其制造方法

    公开(公告)号：US09397242B2

    公开(公告)日：2016-07-19

    申请号：US14006357

    申请日：2012-03-28

    申请人： Yasushi Taniguchi ,  Shigeru Sankawa, Sr. ,  Kouji Arai ,  Hiroshi Tanabe ,  Ichiro Nakayama ,  Naoshi Yamaguchi

    发明人： Yasushi Taniguchi ,  Shigeru Sankawa, Sr. ,  Kouji Arai ,  Hiroshi Tanabe ,  Ichiro Nakayama ,  Naoshi Yamaguchi

    IPC分类号： H01L31/0236 ,  H01L21/306 ,  H01L29/04

    CPC分类号： H01L31/02363 ,  H01L21/30604 ,  H01L29/045 ,  Y02E10/50

    摘要： The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.

    摘要翻译： 本发明解决了通过干法蚀刻具有（111）取向的硅衬底的表面从而在其上形成纹理来提供具有纹理表面的新型硅衬底的问题。 本发明提供具有（111）取向的硅衬底，所述硅衬底具有纹理化表面，其包括多个突起，每个突出部包括三个倾斜面并且具有100至8000nm的高度。 该制造硅衬底的工艺包括：制备具有（111）取向的硅衬底的步骤; 以及将蚀刻气体吹送到硅衬底的表面上的步骤，所述蚀刻气体含有选自ClF 3，XeF 2，BrF 3，BrF 5和NF 3中的一种或多种气体。

    THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION ELEMENT MODULE, AND METHOD OF MANUFACTURING THE SAME
    13.
    发明申请
    THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION ELEMENT MODULE, AND METHOD OF MANUFACTURING THE SAME 有权
    热电转换元件，热电转换元件模块及其制造方法

    公开(公告)号：US20130199593A1

    公开(公告)日：2013-08-08

    申请号：US13880450

    申请日：2011-11-18

    申请人： Takaaki Higashida ,  Kaori Toyoda ,  Takashi Kubo ,  Yoshihisa Ohido ,  Nobuaki Hirata ,  Yasushi Taniguchi

    发明人： Takaaki Higashida ,  Kaori Toyoda ,  Takashi Kubo ,  Yoshihisa Ohido ,  Nobuaki Hirata ,  Yasushi Taniguchi

    IPC分类号： H01L35/32

    CPC分类号： H01L35/32 ,  H01L35/08 ,  H01L35/34

    摘要： The present invention provides a thermoelectric conversion element, a thermoelectric conversion element module, and a method of manufacturing the same that can easily realize high-density arrangement of thermoelectric conversion elements and securement of connection reliability. The thermoelectric conversion element has, for example, rod-shaped thermoelectric conversion material, tube that has an insulation property and an adiabatic property and houses thermoelectric conversion material, and electrodes that are in close adhesion to the end surfaces of thermoelectric conversion material and tube. A surface roughness Ra of the end surfaces is larger than 0.8 micrometers. In the present invention, the thermoelectric conversion elements can be arranged at a high density such that tubes are in close adhesion to each other. Also, since the close adhesion surface of electrodes on the end surfaces is large, the connection reliability of electrodes is further improved.

    摘要翻译： 本发明提供一种热电转换元件，热电转换元件模块及其制造方法，其可以容易地实现热电转换元件的高密度排列并确保连接可靠性。 热电转换元件具有例如棒状热电转换材料，具有绝缘性能和绝热性并容纳热电转换材料的管以及与热电转换材料和管的端面密合的电极。 端面的表面粗糙度Ra大于0.8微米。 在本发明中，热电转换元件可以以高密度布置，使得管彼此紧密附着。 此外，由于端面上的电极的紧密附着面积大，电极的连接可靠性进一步提高。

    Novel diamond-like carbon film and process for the production thereof
    16.
    发明授权
    Novel diamond-like carbon film and process for the production thereof 失效
    新颖的类金刚石碳膜及其生产方法

    公开(公告)号：US4935303A

    公开(公告)日：1990-06-19

    申请号：US257529

    申请日：1988-10-14

    申请人： Keiko Ikoma ,  Noriko Kurihara ,  Keiji Hirabayashi ,  Yasushi Taniguchi ,  Kenji Ando ,  Susumu Ito

    发明人： Keiko Ikoma ,  Noriko Kurihara ,  Keiji Hirabayashi ,  Yasushi Taniguchi ,  Kenji Ando ,  Susumu Ito

    IPC分类号： C23C16/26 ,  C23C16/52 ,  C30B25/10

    CPC分类号： C23C16/52 ,  C23C16/26 ,  C30B25/105 ,  Y10T428/30

    摘要： A general-purpose novel diamond-like carbon film (DLC film) and its manufacture, and the DLC film is characterized by the following items (i) to (iv); (i) the film structure contains mainly diamond crystalline phases, and has a hydrogen content of 20 atomic %, the presence of diamond crystalline phases is confirmed by analysis by the electron diffraction method, and the diffraction peak appears at 2.theta.=43.9 by analysis by the X-ray diffraction method; (ii) the density is 1.8 g/cm.sup.3 or over; (iii) the film surface is smooth and excellent in etching resistance; and (iv) the film is chemically stable and structurally stable, and these stabilities are not deteriorated under high temperature conditions.

    摘要翻译： 通用的新型类金刚石碳膜（DLC膜）及其制造方法，DLC薄膜的特征在于以下（i）〜（iv）项。 （i）膜结构主要包含金刚石结晶相，氢含量为20原子％，通过电子衍射法分析证实了金刚石晶相的存在，衍射峰通过分析出现在2θ= 43.9° 通过X射线衍射法; （ii）密度为1.8g / cm3以上; （iii）膜表面光滑，耐腐蚀性优异; 和（iv）该膜在化学上是稳定的和结构稳定的，并且这些稳定性在高温条件下不会劣化。

    Novel single-bond carbon film and process for the production thereof
    17.
    发明授权
    Novel single-bond carbon film and process for the production thereof 失效
    新型单键碳膜及其制备方法

    公开(公告)号：US4932331A

    公开(公告)日：1990-06-12

    申请号：US257085

    申请日：1988-10-13

    申请人： Noriko Kurihara ,  Keiko Ikoma ,  Keiji Hirabayashi ,  Yasushi Taniguchi ,  Susumu Ito

    发明人： Noriko Kurihara ,  Keiko Ikoma ,  Keiji Hirabayashi ,  Yasushi Taniguchi ,  Susumu Ito

    IPC分类号： C23C16/26

    CPC分类号： C23C16/26 ,  Y10T428/30

    摘要： There is provided a novel single-bond carbonic film, matrix of which comprises carbon atoms and which is characterized by having a peak A at 1340.+-.20 cm.sup.-1 and a peak B at 1580.+-.10 cm.sup.-1 in Raman spectrum; a value of 9.7 or more for the ratio of I.sub.A /I.sub.B between the intensity of said peak A(I.sub.A) and the intensity of said peak B(I.sub.B): and a value in the range of from 30 cm.sup.-1 to 110 cm.sup.-1 for the half band width of said peak A.

    摘要翻译： 提供了一种新颖的单键碳膜，其基质包含碳原子，其特征在于在拉曼为1340 +/- 20cm -1处具有峰A和1580 +/- 10cm -1处的峰B 光谱; 所述峰A（IA）的强度与所述峰B（IB）的强度之间的IA / IB的比例为9.7以上的值，在30cm -1至110cm -1的范围内的值为9.7以上， 1表示所述峰A的半带宽。

    Ultraviolet reflecting mirror
    18.
    发明授权
    Ultraviolet reflecting mirror 失效
    紫外反射镜

    公开(公告)号：US4714308A

    公开(公告)日：1987-12-22

    申请号：US705521

    申请日：1985-02-26

    申请人： Mitsuharu Sawamura ,  Yasushi Taniguchi

    发明人： Mitsuharu Sawamura ,  Yasushi Taniguchi

    IPC分类号： G02B5/08 ,  G02B5/28

    CPC分类号： G02B5/286 ,  G02B5/0858 ,  G02B5/0891

    摘要： An ultraviolet reflecting mirror comprises a substrate, a high reflection factor film provided on the substrate and having a film thickness of at least 250 .ANG. and reflecting a light beam by the surface thereof, and a group of dielectric material layers comprising one or more sets of two layers of low refractive index film and high refractive index film provided on the high reflection factor film. The low refractive index film is provided on the high reflection factor film. The optical film thickness of the high refractive index film and the low refractive index film is approximately 1/4(2n-1).lambda., where n is a natural number and .lambda. is the design wavelength and 150nm.ltoreq..lambda..ltoreq.300nm. The film thickness of at least one of the high refractive index film and the low refractive index film is 3.lambda./4.

    摘要翻译： 紫外线反射镜包括基板，设置在基板上的高反射因子膜，其膜厚度至少为250，并通过其表面反射光束;以及一组介电材料层，包括一组或多组 在高反射因子膜上提供两层低折射率膜和高折射率膜。 低折射率膜设置在高反射因子膜上。 高折射率膜和低折射率膜的光学膜厚度约为1/4（2n-1)λ，其中n为自然数，λ为设计波长，λ为150nmλ= 300nm 。 高折射率膜和低折射率膜中的至少一个的膜厚为3λ/ 4。

    Thermoelectric conversion element, thermoelectric conversion element module, and method of manufacturing the same
    19.
    发明授权
    Thermoelectric conversion element, thermoelectric conversion element module, and method of manufacturing the same 有权
    热电转换元件，热电转换元件模块及其制造方法

    公开(公告)号：US09219216B2

    公开(公告)日：2015-12-22

    申请号：US13880450

    申请日：2011-11-18

    申请人： Takaaki Higashida ,  Kaori Toyoda ,  Takashi Kubo ,  Yoshihisa Ohido ,  Nobuaki Hirata ,  Yasushi Taniguchi

    发明人： Takaaki Higashida ,  Kaori Toyoda ,  Takashi Kubo ,  Yoshihisa Ohido ,  Nobuaki Hirata ,  Yasushi Taniguchi

    IPC分类号： H01L35/32 ,  H01L35/08 ,  H01L35/34

    CPC分类号： H01L35/32 ,  H01L35/08 ,  H01L35/34

    摘要： The present invention provides a thermoelectric conversion element, a thermoelectric conversion element module, and a method of manufacturing the same that can easily realize high-density arrangement of thermoelectric conversion elements and securement of connection reliability. The thermoelectric conversion element has, for example, rod-shaped thermoelectric conversion material, tube that has an insulation property and an adiabatic property and houses thermoelectric conversion material, and electrodes that are in close adhesion to the end surfaces of thermoelectric conversion material and tube. A surface roughness Ra of the end surfaces is larger than 0.8 micrometers. In the present invention, the thermoelectric conversion elements can be arranged at a high density such that tubes are in close adhesion to each other. Also, since the close adhesion surface of electrodes on the end surfaces is large, the connection reliability of electrodes is further improved.

    摘要翻译： 本发明提供一种热电转换元件，热电转换元件模块及其制造方法，其可以容易地实现热电转换元件的高密度排列并确保连接可靠性。 热电转换元件具有例如棒状热电转换材料，具有绝缘性能和绝热性并容纳热电转换材料的管以及与热电转换材料和管的端面密合的电极。 端面的表面粗糙度Ra大于0.8微米。 在本发明中，热电转换元件可以以高密度布置，使得管彼此紧密附着。 此外，由于端面上的电极的紧密附着面积大，电极的连接可靠性进一步提高。