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11.发明申请METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION 审中-公开用于增强半极性（Al，In，Ga，B）N生长的方法通过金属化学气相沉积公开(公告)号：US20120161287A1
公开(公告)日：2012-06-28
申请号：US13351514
申请日：2012-01-17
CPC分类号： C30B25/02 , C30B23/025 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/02573 , H01L21/02587 , H01L21/02609 , H01L21/0262 , H01L33/007
摘要： A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
摘要翻译： 一种通过金属有机化学气相沉积（MOCVD）在衬底上生长半极性氮化物半导体薄膜的方法，其中在半极性氮化物半导体薄膜生长之前，在衬底上生长氮化物成核或缓冲层。
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12.发明申请METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION 有权用于增强半极性（AL，IN，GA，B）N生长的方法通过金属化学气相沉积公开(公告)号：US20090184342A1
公开(公告)日：2009-07-23
申请号：US11517797
申请日：2006-09-08
IPC分类号： H01L29/205 , H01L21/205 , H01L29/20
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02581 , H01L21/02609 , H01L21/02647
摘要： A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
摘要翻译： 一种通过金属有机化学气相沉积（MOCVD）在衬底上生长半极性氮化物半导体薄膜的方法，其中在半极性氮化物半导体薄膜生长之前，在衬底上生长氮化物成核或缓冲层。
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13.发明授权Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition 有权通过金属有机化学气相沉积来增强半极性（Al，In，Ga，B）N生长的方法公开(公告)号：US07575947B2
公开(公告)日：2009-08-18
申请号：US11517797
申请日：2006-09-08
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02581 , H01L21/02609 , H01L21/02647
摘要： A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
摘要翻译： 一种通过金属有机化学气相沉积（MOCVD）在衬底上生长半极性氮化物半导体薄膜的方法，其中在半极性氮化物半导体薄膜生长之前，在衬底上生长氮化物成核或缓冲层。
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公开(公告)号：US07220324B2
公开(公告)日：2007-05-22
申请号：US11372914
申请日：2006-03-10
申请人： Troy J. Baker , Benjamin A. Haskell , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Troy J. Baker , Benjamin A. Haskell , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/00
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L33/007 , Y10S438/938
摘要： A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.
摘要翻译： 一种在杂交尖晶石衬底上生长平面，半极性氮化物膜的方法，其中大面积的平面半极性氮化物膜平行于衬底的表面。 平面膜和衬底是：（1）在{100}尖晶石衬底上在特定方向上生长的{10
11}氮化镓（GaN），（2）{10 22}氮化镓 “100”蓝宝石衬底，以及（4）在{1 100}蓝宝石衬底上生长的{10 13}氮化镓（GaN）。 -
15.发明授权Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices 有权用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术公开(公告)号：US08686466B2
公开(公告)日：2014-04-01
申请号：US12953029
申请日：2010-11-23
申请人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/02
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译： 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。
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16.发明申请TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (GA,AL,IN,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES 有权用于生长和制造半透明（GA，AL，IN，B）N薄膜，异构体和器件的技术公开(公告)号：US20110062449A1
公开(公告)日：2011-03-17
申请号：US12953029
申请日：2010-11-23
申请人： Robert M. Farrell, JR. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell, JR. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译： 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。
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17.发明授权Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices 有权用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术公开(公告)号：US07846757B2
公开(公告)日：2010-12-07
申请号：US11444946
申请日：2006-06-01
申请人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译： 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。
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公开(公告)号：US08193079B2
公开(公告)日：2012-06-05
申请号：US11673426
申请日：2007-02-09
申请人： John F. Kaeding , Hitoshi Sato , Michael Iza , Hirokuni Asamizu , Hong Zhong , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Hitoshi Sato , Michael Iza , Hirokuni Asamizu , Hong Zhong , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/04
CPC分类号： H01L21/2654 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/207
摘要： A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
摘要翻译： （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。
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公开(公告)号：US07704331B2
公开(公告)日：2010-04-27
申请号：US11621482
申请日：2007-01-09
申请人： Troy J. Baker , Benjamin A. Haskell , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Troy J. Baker , Benjamin A. Haskell , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/04
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L33/007 , Y10S438/938
摘要： A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.
摘要翻译： 一种在杂交尖晶石衬底上生长平面，半极性氮化物膜的方法，其中大面积的平面半极性氮化物膜平行于衬底的表面。 平面膜和衬底是：（1）在特定方向上{100}尖晶石衬底上生长的{10}}氮化镓（GaN），（2）{110}上生长的{10 13}氮化镓（GaN） 尖晶石衬底，（3）在{100}蓝宝石衬底上生长的{11-22}氮化镓（GaN），以及（4）在{1100}蓝宝石衬底上生长的{10 13}氮化镓（GaN）。
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公开(公告)号：US08709925B2
公开(公告)日：2014-04-29
申请号：US13440234
申请日：2012-04-05
申请人： John F. Kaeding , Hitoshi Sato , Michael Iza , Hirokuni Asamizu , Hong Zhong , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Hitoshi Sato , Michael Iza , Hirokuni Asamizu , Hong Zhong , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/04
CPC分类号： H01L21/2654 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/207
摘要： A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
摘要翻译： （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。
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