公开(公告)号：US06228760B1

公开(公告)日：2001-05-08

申请号：US09263563

申请日：1999-03-08

申请人： Chen-Hua Yu ,  Syun-Ming Jang ,  Tsu Shih ,  Anthony Yen ,  Jih-Churng Twu

发明人： Chen-Hua Yu ,  Syun-Ming Jang ,  Tsu Shih ,  Anthony Yen ,  Jih-Churng Twu

IPC分类号： H01L214763

CPC分类号： H01L21/0276 ,  H01L21/31144 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/7684 ,  Y10S438/97

摘要： A method forming a protective (SiON or PE-Ox) dielectric anti-reflective coating (DARC) over a di electric layer after a chemical-mechanical polish dielectric layer planarization process and before a chemical-mechanical polish of a conductive layer used in a contact or via plug formation. A dielectric layer is chemical-mechanical polished thereby creating microscratches in the dielectric layer. The invention's protective SiON or PE-OX DARC layer is formed over the dielectric layer whereby the protective SiON or PE-OX DARC layer fills in the microscratches. A first opening is etched in he protective layer and the dielectric layer. A conductive layer is formed over the protective layer and fills the first opening. The conductive layer is chemical-mechanical polished to remove the conductive layer from over the protective layer and to form an interconnect filling the first opening. The protective SiON or PE-OX DARC layer is used as a CMP stop thereby preventing microscratches in the dielectric layer.

摘要翻译： 在化学机械抛光介电层平坦化工艺之后和用于接触的导电层的化学机械抛光之前，在二电层上形成保护性（SiON或PE-Ox）电介质抗反射涂层（DARC）的方法 或通过插塞形成。 电介质层被化学机械抛光，从而在电介质层中形成微细结构。 本发明的保护性SiON或PE-OX DARC层形成在电介质层上，由此保护性SiON或PE-OX DARC层填充在微细凹槽中。 在其保护层和电介质层中蚀刻第一开口。 导电层形成在保护层上并填充第一开口。 导电层被化学机械抛光以从保护层上方移除导电层并形成填充第一开口的互连。 使用保护性SiON或PE-OX DARC层作为CMP阻挡层，从而防止电介质层中的微细纹。

公开(公告)号：US06197669B1

公开(公告)日：2001-03-06

申请号：US09292361

申请日：1999-04-15

申请人： Jih-Churng Twu ,  Syun-Ming Jang ,  Chen-Hua Yu

发明人： Jih-Churng Twu ,  Syun-Ming Jang ,  Chen-Hua Yu

IPC分类号： H01L213205

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A method is provided for depositing an amorphous silicon thin film on a substrate. The method is carried out in a reactor chamber and can be a LPCVD, PECVD or RTCVD process. The method comprises introducing a gas species into the reactor chamber for a time sufficient to dehydrate the substrate and to form a thin layer of silicon on the substrate. Following formation of the thin layer of silicon, a dopant gas is introduced into the reactor chamber to form the doped silicon thin film. The temperature and pressure within the chamber is set to minimize formation of surface irregularities or pits within the thin amorphous silicon layer.

摘要翻译： 提供了一种在衬底上沉积非晶硅薄膜的方法。 该方法在反应器室中进行，并且可以是LPCVD，PECVD或RTCVD工艺。 该方法包括将气体物质引入反应器室中足以使基底脱水并在基底上形成薄的硅层的时间。 在形成薄层的硅之后，将掺杂剂气体引入反应器室以形成掺杂的硅薄膜。 室内的温度和压力被设定为使薄的非晶硅层内的表面凹凸或凹坑的形成最小化。

公开(公告)号：US06878578B1

公开(公告)日：2005-04-12

申请号：US10134823

申请日：2002-04-26

申请人： Jih-Churng Twu ,  Tsung-Chieh Tsai ,  Roung-Hui Kao ,  Chia-Chun Cheng

发明人： Jih-Churng Twu ,  Tsung-Chieh Tsai ,  Roung-Hui Kao ,  Chia-Chun Cheng

IPC分类号： H01L21/28 ,  H01L21/306 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/51

CPC分类号： H01L21/28211 ,  H01L21/02052 ,  H01L21/823857 ,  H01L29/51 ,  H01L29/6659

摘要： A continuous and integrated cleaning/preparation process is described to condition a silicon surface for the formation of a high quality ultra thin gate oxide described. The process is conducted with the wafer surface immersed in an aqueous solution the composition of which is varied continuously according to the steps of the process. The process includes the initial removal of contaminants and particulates followed by the removal of a native oxide. Next the silicon surface is dressed in the present of both HF and ozone by removing a thin surface layer. Any interfacial contamination or surface structural defects which lay under the native oxide are thereby removed. Next a high quality chemical oxide is grown by the action of the ozone in the aqueous bath. The chemical oxide is found to be of higher purity and structural quality than native oxide and provides a superior passivation of the active surface prior to gate oxidation. The chemical oxide is incorporated into the final gate oxide and, because of it's high quality, results in improved device performance of the final gate oxide.

摘要翻译： 描述了连续且集成的清洁/制备方法以调节硅表面以形成所述的高质量超薄栅极氧化物。 该工艺是将晶片表面浸入水溶液中进行的，该水溶液的组成根据该方法的步骤连续变化。 该方法包括初始去除污染物和微粒，然后除去天然氧化物。 接下来，通过去除薄的表面层，将硅表面穿过HF和臭氧的现在。 由此除去在天然氧化物之下的任何界面污染物或表面结构缺陷。 接下来，通过臭氧在水浴中的作用生长高质量的化学氧化物。 发现化学氧化物具有比天然氧化物更高的纯度和结构质量，并且在栅极氧化之前提供优异的活性表面钝化。 化学氧化物被结合到最终的栅极氧化物中，并且由于其高质量，导致最终栅极氧化物的器件性能的提高。

公开(公告)号：US06589356B1

公开(公告)日：2003-07-08

申请号：US09676746

申请日：2000-09-29

申请人： Juin-Jie Chang ,  Jih-Churng Twu ,  Rong-Hui Kao

发明人： Juin-Jie Chang ,  Jih-Churng Twu ,  Rong-Hui Kao

IPC分类号： C23G102

CPC分类号： H01L21/02046 ,  H01L21/02052

摘要： A method for cleaning a silicon-based substrate in an ammonia-containing solution without incurring any damages to the silicon surface by NH4OH vapor is described. The method can be conducted by first providing a silicon-based substrate that has a silicon surface, then forming a silicon oxide layer of very small thickness, i.e. less than 10 Å, on the silicon surface. The silicon-based substrate can then be cleaned in an ammonia-containing solution without incurring any surface damage to the silicon, i.e. such as the formation of silicon holes. The present invention novel method can be carried out by either adding an additional oxidation tank before the SC-1 cleaning tank, or adding an oxidant to a quick dump rinse tank prior to the SC-1 cleaning process.

摘要翻译： 描述了一种在含氨溶液中清洗硅基底物而不会由NH 4 OH蒸气对硅表面造成任何损害的方法。 该方法可以通过首先提供具有硅表面的硅基衬底，然后在硅表面上形成非常小的厚度（即，小于）的氧化硅层来进行。 然后可以在含氨溶液中清洗硅基基材，而不会对硅造成任何表面损伤，例如形成硅孔。 本发明的新方法可以通过在SC-1清洗槽之前添加另外的氧化槽，或在SC-1清洗过程之前向快速倾倒冲洗槽中加入氧化剂来进行。

公开(公告)号：US06500753B2

公开(公告)日：2002-12-31

申请号：US09838209

申请日：2001-04-20

申请人： Syun-Ming Jang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Chen-Hua Yu

发明人： Syun-Ming Jang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Chen-Hua Yu

IPC分类号： H01L218238

CPC分类号： H01L21/7684 ,  H01L21/76838 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention teaches the addition of copper lines, these copper lines to be added to isolated copper lines or to selected copper lines within a collection of copper lines. The invention also teaches the addition of copper end caps to isolated copper lines or to selected copper lines within a collection of copper lines. The invention further teaches the widening of copper lines for isolated copper lines or selected copper lines within a collection of copper lines.

摘要翻译： 本发明教导了铜线的添加，这些铜线被添加到隔离铜线或铜线集合内的选定铜线。 本发明还教导了将铜端盖添加到铜线集合中的隔离铜线或铜线。 本发明进一步教导了铜线集合中用于隔离铜线或选定铜线的铜线的扩大。

公开(公告)号：US06358119B1

公开(公告)日：2002-03-19

申请号：US09336808

申请日：1999-06-21

申请人： Tsu Shih ,  Jih-Churng Twu ,  Ying-Ho Chen ,  Syun-Ming Jang

发明人： Tsu Shih ,  Jih-Churng Twu ,  Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： B24B100

CPC分类号： B24B37/12 ,  B24B37/015 ,  B24B55/02

摘要： The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.

摘要翻译： 本发明提供了一种方法和装置，其通过在低温下进行CMP工艺，并且通过添加用作腐蚀抑制剂的浆料在CMP工艺期间保持该低温来防止铜线的CMP中的铜离子的累积。

公开(公告)号：US6153526A

公开(公告)日：2000-11-28

申请号：US320758

申请日：1999-05-27

申请人： Tsu Shih ,  Jih-Churng Twu

发明人： Tsu Shih ,  Jih-Churng Twu

IPC分类号： H01L21/3105 ,  H01L21/321 ,  H01L21/00

CPC分类号： H01L21/31053 ,  H01L21/3212

摘要： A new method for removing particle residue from the surface of semiconductor wafers that contain wolfram plugs. A series of polishing and buffing steps is performed; the first of this is a wolfram CMP using a hard polishing pad. An oxide buffing operation is further performed on the wafer surface; a soft pad is used for this buffing operation. The buffing operation is followed by a wolfram CMP that is applied for a short period of time using a soft polishing pad thereby removing the protruding top of the wolfram plug and the oxide particles from the vicinity of the wolfram plugs.

摘要翻译： 一种从包含钨丝塞的半导体晶片表面去除颗粒残留物的新方法。 进行一系列抛光和抛光步骤; 第一个是使用硬抛光垫的钨粉CMP。 在晶片表面上进一步进行氧化物抛光操作; 一个软垫用于这种抛光操作。 抛光操作之后是使用软抛光垫施加短时间的钨粉CMP，从而从钨粉塞附近除去钨骨塞的突出顶部和氧化物颗粒。

公开(公告)号：US06589872B1

公开(公告)日：2003-07-08

申请号：US09304302

申请日：1999-05-03

申请人： Jih-Churng Twu ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

发明人： Jih-Churng Twu ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： H01K2120

CPC分类号： B24B37/042 ,  B24B49/00 ,  B24B57/02

摘要： The invention teaches a new method of applying slurry during the process of chemical mechanical polishing of copper surfaces. By varying the rate of slurry deposition, starting out with a low rate of slurry flow that is increased as the polishing process proceeds, the invention obtains good planarity for copper surfaces while saving on the amount of slurry that is being used for the copper surface polishing process.

摘要翻译： 本发明教导了在铜表面的化学机械抛光过程中施加浆料的新方法。 通过改变浆料沉积速率，随着抛光工艺的进行，随着浆料流动速度的降低而开始，本发明对于铜表面获得了良好的平面性，同时节省了用于铜表面抛光的浆料量 处理。

公开(公告)号：US06429118B1

公开(公告)日：2002-08-06

申请号：US09664414

申请日：2000-09-18

申请人： Ying-Ho Chen ,  Syun-Ming Jang ,  Jih-Churng Twu ,  Tsu Shih

发明人： Ying-Ho Chen ,  Syun-Ming Jang ,  Jih-Churng Twu ,  Tsu Shih

IPC分类号： H01L213213

CPC分类号： H01L21/76802 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76877

摘要： An improved and new process, used for the elimination of copper line damage in damacene processing, is disclosed. By depositing copper by physical vapor deposition (PVD), sputtering, preferably by an ion metal plasma (IMP) scheme or chemical vapor deposition (CVD), the deposited copper fills pinholes or intra-cracks (micro-cracks), caused by poor gap filling of purely electrochemical deposition of copper plating. By this process or method, chemical attack on copper lines, by chemicals in the subsequent chemical mechanical polish (CMP) back and post-cleaning steps, is prevented.

摘要翻译： 公开了一种改进和新的方法，用于消除碲化氢处理中的铜线损伤。 通过物理气相沉积（PVD），优选通过离子金属等离子体（IMP）方案或化学气相沉积（CVD）沉积铜，沉积的铜填充由差的间隙引起的针孔或裂纹（微裂纹） 填充电镀纯电化学沉积。 通过该方法或方法，可以防止化学品在后续的化学机械抛光（CMP）背面和后清洗步骤中对铜线进行化学侵蚀。

公开(公告)号：US06425191B1

公开(公告)日：2002-07-30

申请号：US09837815

申请日：2001-04-18

申请人： Rong-Hui Kao ,  Ming-Dar Guo ,  Jih-Churng Twu ,  Tsung-Chieh Tsai ,  Chia-Chun Cheng

发明人： Rong-Hui Kao ,  Ming-Dar Guo ,  Jih-Churng Twu ,  Tsung-Chieh Tsai ,  Chia-Chun Cheng

IPC分类号： F26B300

CPC分类号： H01L21/67034

摘要： An apparatus and a method for reducing solvent residue in a solvent-type dryer for drying semiconductor wafers have been disclosed. The apparatus is constructed by a tank body, a wafer carrier, an elevator means, a tank cover, a solvent vapor conduit and an exhaust means. The exhaust means is provided for fluid communication with a compartment in the tank cover such that any residual solvent vapor or any organic residue in the compartment left from the wafer drying cycle can be evacuated to a factory exhaust system. The present invention novel method for reducing solvent or organic residue in the dryer can be carried out, after the removal of the dried wafers from the dryer, by evacuating the compartment in the tank cover for a time period of between about 30 sec. and about 300 sec. until all residual solvent vapor or organic residue is evacuated.

摘要翻译： 已经公开了用于干燥半导体晶片的溶剂型干燥器中用于还原溶剂残留物的装置和方法。 该装置由罐体，晶片载体，电梯装置，罐盖，溶剂蒸气导管和排气装置构成。 提供排气装置用于与罐盖中的隔室流体连通，使得离开晶片干燥循环的隔室中的任何残留溶剂蒸气或任何有机残余物可被排空到工厂排气系统。 本发明的用于还原干燥机中的溶剂或有机残留物的新方法可以在从干燥器中除去干燥的晶片之后，通过将储罐盖中的隔室抽空约30秒的时间来进行。 约300秒 直到所有残留的溶剂蒸气或有机残余物被抽空。