THERMAL INTERFACES FOR INTEGRATED CIRCUIT PACKAGES

    公开(公告)号:US20180090411A1

    公开(公告)日:2018-03-29

    申请号:US15279222

    申请日:2016-09-28

    Abstract: A thermal interface may include a wired network made of a first TIM, and a second TIM surrounding the wired network. A heat spreader lid may include a wired network attached to an inner surface of the heat spreader lid. An IC package may include a heat spreader lid placed over a first electronic component and a second electronic component. A first thermal interface may be formed between the first electronic component and the inner surface of the heat spreader lid, and a second thermal interface may be formed between the second electronic component and the inner surface of the heat spreader lid. The first thermal interface may include a wired network of a first TIM surrounded by a second TIM, while the second thermal interface may include the second TIM, without a wired network of the first TIM. Other embodiments may be described and/or claimed.

    Mold shelf package design and process flow for advanced package architectures

    公开(公告)号:US12261150B2

    公开(公告)日:2025-03-25

    申请号:US18399189

    申请日:2023-12-28

    Abstract: Embodiments include semiconductor packages and a method to form such semiconductor packages. A semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. The encapsulation layer surrounds the dies. The semiconductor package also includes a plurality of dummy silicon regions on the substrate. The dummy silicon regions surround the dies and encapsulation layer. The plurality of dummy silicon regions are positioned on two or more edges of the substrate. The dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. The dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. The materials have a thermal conductivity of approximately 120 W/mK or greater, or is equal to or greater than the thermal conductivity of silicon. An underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.

    DUMMY DIE IN A RECESSED MOLD STRUCTURE OF A PACKAGED INTEGRATED CIRCUIT DEVICE

    公开(公告)号:US20220102231A1

    公开(公告)日:2022-03-31

    申请号:US17032583

    申请日:2020-09-25

    Abstract: Techniques and mechanisms for facilitating heat conductivity in a packaged device with a dummy die. In an embodiment, a packaged device comprises a substrate and one or more IC die coupled thereto. A dummy die structure extends to a bottom of a recess structure formed by a first package mold structure on the substrate. The dummy die structure comprises a polymer resin and a filler, or comprises a metal which has a low coefficient of thermal expansion (CTE). A second package mold structure, which extends to the recess structure, is adjacent to the first package mold structure and to an IC die. In another embodiment, a first CTE of the dummy die is less than a second CTE of one of the package mold structures, and a first thermal conductivity of the dummy die is greater than a second thermal conductivity of the one of the package mold structures.

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