公开(公告)号：US20230290831A1

公开(公告)日：2023-09-14

申请号：US17690358

申请日：2022-03-09

Applicant: Intel Corporation

Inventor： Abhishek A. Sharma ,  Wilfred Gomes ,  Ravi Pillarisetty ,  Willy Rachmady ,  Sagar Suthram ,  Pushkar Sharad Ranade ,  Anand S. Murthy ,  Tahir Ghani

IPC: H01L29/10 ,  H01L29/45 ,  H01L29/06 ,  H01L29/423 ,  H01L29/40

CPC classification number: H01L29/1033 ,  H01L29/45 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/401 ,  H01L27/10826

Abstract: The scaling of features in ICs has been a driving force behind an ever-growing semiconductor industry. As transistors of the ICs become smaller, their gate lengths become smaller, leading to undesirable short-channel effects such as poor leakage, poor subthreshold swing, drain-induced barrier lowering, etc. Reducing transistor dimensions at the gate allows keeping the footprint of the transistor relatively small and comparable to what could be achieved implementing a transistor with a shorter gate length while effectively increasing transistor's effective gate length and thus reducing the negative impacts of short-channel effects. This architecture may be optimized even further if transistors are to be operated at relatively low temperatures, e.g., below 200 Kelvin degrees or lower.

公开(公告)号：US20230261107A1

公开(公告)日：2023-08-17

申请号：US17672332

申请日：2022-02-15

Applicant: Intel Corporation

Inventor： Abhishek A. Sharma ,  Tahir Ghani ,  Wilfred Gomes ,  Sagar Suthram ,  Pushkar Sharad Ranade ,  Willy Rachmady ,  Ravi Pillarisetty ,  Anand S. Murthy

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/40 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/78391 ,  H01L29/516 ,  H01L29/401 ,  H01L29/7851 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/78696

Abstract: Disclosed herein are transistor gate-channel arrangements with transistor gate stacks that include dipole layers, and related methods and devices. Transistor gate stacks disclosed herein include a multilayer gate oxide having both a high-k dielectric and a dipole layer. In some embodiments, a thin dipole layer may directly border a channel material of choice and may be between the channel material and the high-k dielectric. In other embodiments, a passivation layer may spontaneously form between the dipole layer and the channel material. In still other embodiments, the high-k dielectric may be between the dipole layer and the channel material. Temporary polarization provided by the dipole layer may increase the effective dielectric constant of the high-k dielectric and may allow to use thinner high-k dielectrics and/or high-k dielectrics of suboptimal quality while maintaining transistor performance in terms of, e.g., gate leakage, carrier mobility, and subthreshold swing.

公开(公告)号：US20240105596A1

公开(公告)日：2024-03-28

申请号：US17935627

申请日：2022-09-27

Applicant: Intel Corporation

Inventor： Abhishek A. Sharma ,  Tahir Ghani ,  Wilfred Gomes ,  Anand S. Murthy ,  Shem Ogadhoh ,  Pushkar Sharad Ranade ,  Sagar Suthram ,  Elliot Tan

IPC: H01L23/528 ,  H01L23/498

CPC classification number: H01L23/528 ,  H01L23/49838 ,  H01L24/16

Abstract: IC devices with angled interconnects are disclosed herein. An interconnect, specifically a trench or line interconnect, is referred to as an “angled interconnect” if the interconnect is neither perpendicular nor parallel to any edges of front or back faces of the support structure, or if the interconnect is not parallel or perpendicular to interconnect in another region of an interconnect layer. Angled interconnects may be used to decrease the area of pitch transition regions. Angled interconnects may also be used to decrease the area of pitch offset regions.

公开(公告)号：US20240008255A1

公开(公告)日：2024-01-04

申请号：US18325492

申请日：2023-05-30

Applicant: Intel Corporation

Inventor： Abhishek A. Sharma ,  Sagar Suthram ,  Tahir Ghani ,  Anand S. Murthy ,  Cory E. Weber ,  Rishabh Mehandru ,  Wilfred Gomes ,  Pushkar Sharad Ranade

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/033 ,  H10B12/05 ,  H10B12/482

Abstract: Memory arrays with backside components and angled transistors, and related assemblies and methods, are disclosed herein. A transistor is referred to as an “angled transistor” if a longitudinal axis of an elongated semiconductor structure of the transistor (e.g., a fin or a nanoribbon) is neither perpendicular nor parallel to any edges of front or back sides of a support structure (e.g., a die) over which the transistor is implemented. A component is referred to as a “backside component” if it is provided on the side of a semiconductor substrate that is opposite to the side over which the transistors of the memory arrays are provided. Memory arrays with backside components and angled transistors provide a promising way to increasing densities of memory cells on the limited real estate of semiconductor chips and/or decreasing adverse effects associated with continuous scaling of IC components.

公开(公告)号：US20240006395A1

公开(公告)日：2024-01-04

申请号：US17853778

申请日：2022-06-29

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Debendra Mallik ,  Wilfred Gomes ,  Pushkar Sharad Ranade ,  Nitin A. Deshpande ,  Omkar G. Karhade ,  Ravindranath Vithal Mahajan ,  Abhishek A. Sharma

IPC: H01L25/16 ,  H01L23/492 ,  H01L23/522 ,  H01L23/528 ,  H01L23/04 ,  H01L23/46 ,  H01L23/48 ,  H01L23/00

CPC classification number: H01L25/167 ,  H01L23/492 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/04 ,  H01L2224/80895 ,  H01L23/481 ,  H01L24/08 ,  H01L24/80 ,  H01L24/96 ,  H01L2224/08146 ,  H01L23/46

Abstract: Embodiments of a microelectronic assembly comprise: a plurality of microelectronic sub-assemblies arranged in a coplanar array, each microelectronic sub-assembly having a first side and an opposing second side; a first conductive plate coupled to the first sides of the microelectronic sub-assemblies; and a second conductive plate coupled to the second sides of the microelectronic sub-assemblies. The first conductive plate and the second conductive plate comprise sockets corresponding to each of the microelectronic sub-assemblies, and each microelectronic sub-assembly comprises a first plurality of integrated circuit (IC) dies coupled on one end to a first IC die and on an opposing end to a second IC die; and a second plurality of IC dies coupled to the first IC die and to the second IC die.

公开(公告)号：US20230420410A1

公开(公告)日：2023-12-28

申请号：US17846129

申请日：2022-06-22

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Ravindranath Vithal Mahajan ,  Debendra Mallik ,  Omkar G. Karhade ,  Wilfred Gomes ,  Pushkar Sharad Ranade ,  Abhishek A. Sharma ,  Tahir Ghani ,  Anand S. Murthy ,  Nitin A. Deshpande

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/522 ,  H01L23/46 ,  H01L25/00

CPC classification number: H01L25/0652 ,  H01L24/08 ,  H01L23/5226 ,  H01L23/46 ,  H01L24/94 ,  H01L24/96 ,  H01L25/50 ,  H01L24/80 ,  H01L2224/08137 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Embodiments of an integrated circuit (IC) die comprise: a first IC die coupled to at least two second IC dies by interconnects on a first surface of the first IC die and second surfaces of the second IC dies such that the first surface is in contact with the second surfaces. The second surfaces are coplanar, the interconnects comprise dielectric-dielectric bonds and metal-metal bonds, the metal-metal bonds include first bond-pads in the first IC die and second bond-pads in the second IC dies, the first IC die comprises a substrate attached to a metallization stack along a planar interface that is orthogonal to the first surface, the metallization stack comprises a plurality of layers of conductive traces in a dielectric material, and the first bond-pads comprise portions of the conductive traces exposed on the first surface.

公开(公告)号：US20230275151A1

公开(公告)日：2023-08-31

申请号：US17680365

申请日：2022-02-25

Applicant: Intel Corporation

Inventor： Abhishek A. Sharma ,  Anand S. Murthy ,  Tahir Ghani ,  Wilfred Gomes ,  Pushkar Sharad Ranade ,  Sagar Suthram

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/8238

CPC classification number: H01L29/785 ,  H01L29/66795 ,  H01L21/823807

Abstract: Hybrid FETs and methods of forming such hybrid FETs are disclosed. An example hybrid FET includes a channel region, a first region, a second region, a third region, and two gates. A gate may wrap around a portion of the channel region. The channel region may be over a first substrate (e.g., a substrate on which the channel region is formed) but cross a second substrate. The channel region is shared by a MOSFET and a TFET. The first region and second region constitute the source and drain of the MOSFET and are doped with dopants of the same type. The first region and third region constitute the source and drain of the TFET and are doped with dopants of opposite types. The third region may be placed at the opposite side of the second substrate from the first region and the second region.

公开(公告)号：US20250062278A1

公开(公告)日：2025-02-20

申请号：US18452152

申请日：2023-08-18

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Debendra Mallik ,  Wilfred Gomes ,  Pushkar Sharad Ranade ,  Nitin A. Deshpande ,  Ravindranath Vithal Mahajan ,  Abhishek A. Sharma ,  Joshua Fryman ,  Stephen Morein ,  Matthew Adiletta ,  Michael Crocker ,  Aaron Gorius

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/522

Abstract: Embodiments of a microelectronic assembly may include a first integrated circuit (IC) die having a first surface, a second surface opposite the first surface, and a third surface orthogonal to the first and second surfaces, the first IC die including a conductive trace that is parallel to the first and second surfaces, and the conductive trace is exposed at the third surface; and a second IC die including a fourth surface, wherein the fourth surface of the second IC die is electrically coupled to the third surface of the first IC die by an interconnect including solder.

公开(公告)号：US20240222321A1

公开(公告)日：2024-07-04

申请号：US18148533

申请日：2022-12-30

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Wilfred Gomes ,  Nisha Ananthakrishnan ,  Kemal Aygun ,  Ravindranath Vithal Mahajan ,  Debendra Mallik ,  Pushkar Sharad Ranade ,  Abhishek A. Sharma

IPC: H01L25/065

CPC classification number: H01L25/0652 ,  H01L2225/06548

Abstract: Embodiments of a microelectronic assembly include: a first integrated circuit (IC) die having a first memory circuit and a second memory circuit; a second IC die; a third IC die; and a package substrate. The second IC die is between the first IC die and the package substrate. The first IC die includes: a first portion comprising a first active region and a first backend region in contact with the first active region; and a second portion comprising a second active region and a second backend region in contact with the second active region. The first memory circuit is in the first portion, the second memory circuit is in the second portion, the first active region comprises transistors that are larger than transistors in the second active region, and the first backend region comprises conductive traces that have a larger pitch than conductive traces in the second backend region.

公开(公告)号：US20230422463A1

公开(公告)日：2023-12-28

申请号：US18312847

申请日：2023-05-05

Applicant: Intel Corporation

Inventor： Abhishek A. Sharma ,  Sagar Suthram ,  Kimberly L. Pierce ,  Elliot Tan ,  Pushkar Sharad Ranade ,  Shem Odhiambo Ogadhoh ,  Wilfred Gomes ,  Anand S. Murthy ,  Swaminathan Sivakumar ,  Tahir Ghani

IPC: H10B10/00

CPC classification number: H10B10/125

Abstract: SRAM devices with angled transistors, and related assemblies and methods, are disclosed herein. A transistor is referred to as “angled” if a longitudinal axis of an elongated semiconductor structure (e.g., a fin or a nanoribbon) based on which the transistor is built is at an angle other than 0 degrees or 90 degrees with respect to the edges of front or back faces of a support structure or a die on/in which the transistor resides, e.g., at an angle between about 10 and 80 degrees with respect to at least one of such edges. Implementing at least some of the transistors of SRAM cells as angled transistors may provide a promising way to increasing densities of SRAM cells on the limited real estate of semiconductor chips.