公开(公告)号：US10096674B2

公开(公告)日：2018-10-09

申请号：US15717336

申请日：2017-09-27

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GlobalFoundries, Inc.

发明人： Kangguo Cheng ,  Xin Miao ,  Ruilong Xie ,  Tenko Yamashita

IPC分类号： H01L29/06 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L29/66 ,  H01L21/02 ,  H01L21/265 ,  H01L21/84 ,  H01L21/8238 ,  H01L27/092

摘要： A method of making a nanowire device includes disposing a first nanowire stack over a substrate, the first nanowire stack including alternating layers of a first and second semiconducting material, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; disposing a second nanowire stack over the substrate, the second nanowire stack including alternating layers of the first and second semiconducting materials, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; forming a first gate spacer along a sidewall of a first gate region on the first nanowire stack and a second gate spacer along a sidewall of a second gate region on the second nanowire stack; oxidizing a portion of the first nanowire stack within the first gate spacer; and removing the first semiconducting material from the first nanowire stack and the second nanowire stack.

公开(公告)号：US20180019305A1

公开(公告)日：2018-01-18

申请号：US15717336

申请日：2017-09-27

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GlobalFoundries, Inc.

发明人： Kangguo Cheng ,  Xin Miao ,  Ruilong Xie ,  Tenko Yamashita

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L29/775 ,  H01L29/66 ,  H01L21/265 ,  H01L27/12 ,  H01L27/092 ,  H01L21/84 ,  H01L21/8238 ,  H01L29/786 ,  H01L29/423

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/26566 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78654 ,  H01L29/78684 ,  H01L29/78696

摘要： A method of making a nanowire device incudes disposing a first nanowire stack over a substrate, the first nanowire stack including alternating layers of a first and second semiconducting material, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; disposing a second nanowire stack over the substrate, the second nanowire stack including alternating layers of the first and second semiconducting materials, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; forming a first gate spacer along a sidewall of a first gate region on the first nanowire stack and a second gate spacer along a sidewall of a second gate region on the second nanowire stack; oxidizing a portion of the first nanowire stack within the first gate spacer; and removing the first semiconducting material from the first nanowire stack and the second nanowire stack.

公开(公告)号：US09818823B2

公开(公告)日：2017-11-14

申请号：US15202994

申请日：2016-07-06

申请人： International Business Machines Corporation ,  GlobalFoundries, Inc.

发明人： Kangguo Cheng ,  Xin Miao ,  Ruilong Xie ,  Tenko Yamashita

IPC分类号： H01L29/06 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/265 ,  H01L21/02 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  H01L29/423 ,  H01L27/092 ,  H01L27/12

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/26566 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78654 ,  H01L29/78684 ,  H01L29/78696

摘要： A method of making a nanowire device includes disposing a first nanowire stack over a substrate, the first nanowire stack including alternating layers of a first and second semiconducting material, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; disposing a second nanowire stack over the substrate, the second nanowire stack including alternating layers of the first and second semiconducting materials, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; forming a first gate spacer along a sidewall of a first gate region on the first nanowire stack and a second gate spacer along a sidewall of a second gate region on the second nanowire stack; oxidizing a portion of the first nanowire stack within the first gate spacer; and removing the first semiconducting material from the first nanowire stack and the second nanowire stack.

公开(公告)号：US09437501B1

公开(公告)日：2016-09-06

申请号：US14861326

申请日：2015-09-22

申请人： International Business Machines Corporation ,  GlobalFoundries, Inc.

发明人： Kangguo Cheng ,  Xin Miao ,  Ruilong Xie ,  Tenko Yamashita

IPC分类号： H01L21/8238 ,  H01L21/84 ,  H01L21/265 ,  H01L21/02 ,  H01L29/66 ,  H01L29/06 ,  H01L29/775 ,  H01L29/786 ,  H01L29/423 ,  H01L27/092 ,  H01L27/12 ,  H01L21/74

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/26566 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78654 ,  H01L29/78684 ,  H01L29/78696

摘要： A method of making a nanowire device incudes disposing a first nanowire stack over a substrate, the first nanowire stack including alternating layers of a first and second semiconducting material, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; disposing a second nanowire stack over the substrate, the second nanowire stack including alternating layers of the first and second semiconducting materials, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; forming a first gate spacer along a sidewall of a first gate region on the first nanowire stack and a second gate spacer along a sidewall of a second gate region on the second nanowire stack; oxidizing a portion of the first nanowire stack within the first gate spacer; and removing the first semiconducting material from the first nanowire stack and the second nanowire stack.

摘要翻译： 制造纳米线器件的方法包括在衬底上设置第一纳米线堆叠，第一纳米线堆叠包括第一和第二半导体材料的交替层，第一半导体材料与衬底接触，第二半导体材料是暴露表面; 在所述衬底上设置第二纳米线堆叠，所述第二纳米线堆叠包括所述第一和第二半导体材料的交替层，所述第一半导体材料与所述衬底接触，所述第二半导体材料为暴露表面; 沿着第一纳米线堆叠上的第一栅极区域的侧壁形成第一栅极间隔物，并且沿着第二纳米线堆叠件上的第二栅极区域的侧壁形成第二栅极间隔物; 氧化所述第一栅极间隔物内的所述第一纳米线堆叠的一部分; 以及从所述第一纳米线堆叠和所述第二纳米线堆叠中去除所述第一半导体材料。

公开(公告)号：US20180090624A1

公开(公告)日：2018-03-29

申请号：US15276372

申请日：2016-09-26

申请人： International Business Machines Corporation ,  Globalfoundries Inc.

发明人： Kangguo Cheng ,  Xin Miao ,  Ruilong Xie ,  Tenko Yamashita

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/78696 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78654 ,  H01L29/78684

摘要： In one aspect, a method of forming a semiconductor device includes the steps of: forming an alternating series of sacrificial/active layers on a wafer and patterning it into at least one nano device stack; forming a dummy gate on the nano device stack; patterning at least one upper active layer in the nano device stack to remove all but a portion of the at least one upper active layer beneath the dummy gate; forming spacers on opposite sides of the dummy gate covering the at least one upper active layer that has been patterned; forming source and drain regions on opposite sides of the nano device stack, wherein the at least one upper active layer is separated from the source and drain regions by the spacers; and replacing the dummy gate with a replacement gate. A masking process is also provided to tailor the effective device width of select devices.

公开(公告)号：US09698230B2

公开(公告)日：2017-07-04

申请号：US15283951

申请日：2016-10-03

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GlobalFoundries, Inc.

发明人： Kangguo Cheng ,  Xin Miao ,  Ruilong Xie ,  Tenko Yamashita

IPC分类号： H01L21/70 ,  H01L29/417 ,  H01L29/08 ,  H01L29/16 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L21/762

CPC分类号： H01L29/41791 ,  H01L21/76224 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/535 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/41758 ,  H01L29/42356 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

摘要： A semiconductor device includes a source and drain on a substrate; a first and second gate on the source, and the second gate and a third gate on the drain; a source contact over the source and between the first and second gates, the source contact including first and second portions, the first portion in contact with the source and extending between the first and second gates, and the second portion contacting the first portion and extending over the first and second gates; and a drain contact formed over the drain and between the second and third gates, the drain contact including first and second portions, the first portion contacting the drain, extending between second and third gates, and recessed with respect to the first portion of the source contact, and the second portion in contact with the first portion and extending between and over the second and third gates.

公开(公告)号：US20170140987A1

公开(公告)日：2017-05-18

申请号：US15254096

申请日：2016-09-01

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GlobalFoundries, Inc.

发明人： Kangguo Cheng ,  Xin Miao ,  Ruilong Xie ,  Tenko Yamashita

IPC分类号： H01L21/768 ,  H01L29/66 ,  H01L23/522

CPC分类号： H01L29/41791 ,  H01L21/76224 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/535 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/41758 ,  H01L29/42356 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

摘要： A semiconductor device includes a source and drain on a substrate; a first and second gate on the source, and the second gate and a third gate on the drain; a source contact over the source and between the first and second gates, the source contact including first and second portions, the first portion in contact with the source and extending between the first and second gates, and the second portion contacting the first portion and extending over the first and second gates; and a drain contact formed over the drain and between the second and third gates, the drain contact including first and second portions, the first portion contacting the drain, extending between second and third gates, and recessed with respect to the first portion of the source contact, and the second portion in contact with the first portion and extending between and over the second and third gates.

公开(公告)号：US09640436B1

公开(公告)日：2017-05-02

申请号：US15254096

申请日：2016-09-01

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GlobalFoundries, Inc.

发明人： Kangguo Cheng ,  Xin Miao ,  Ruilong Xie ,  Tenko Yamashita

IPC分类号： H01L21/70 ,  H01L21/768 ,  H01L23/522 ,  H01L29/66 ,  H01L23/532 ,  H01L23/528

CPC分类号： H01L29/41791 ,  H01L21/76224 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/535 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/41758 ,  H01L29/42356 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

摘要： A semiconductor device includes a source and drain on a substrate; a first and second gate on the source, and the second gate and a third gate on the drain; a source contact over the source and between the first and second gates, the source contact including first and second portions, the first portion in contact with the source and extending between the first and second gates, and the second portion contacting the first portion and extending over the first and second gates; and a drain contact formed over the drain and between the second and third gates, the drain contact including first and second portions, the first portion contacting the drain, extending between second and third gates, and recessed with respect to the first portion of the source contact, and the second portion in contact with the first portion and extending between and over the second and third gates.

公开(公告)号：US20170084756A1

公开(公告)日：2017-03-23

申请号：US15202994

申请日：2016-07-06

申请人： International Business Machines Corporation ,  GlobalFoundries, Inc.

发明人： Kangguo Cheng ,  Xin Miao ,  Ruilong Xie ,  Tenko Yamashita

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/265 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/26566 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78654 ,  H01L29/78684 ,  H01L29/78696

摘要： A method of making a nanowire device includes disposing a first nanowire stack over a substrate, the first nanowire stack including alternating layers of a first and second semiconducting material, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; disposing a second nanowire stack over the substrate, the second nanowire stack including alternating layers of the first and second semiconducting materials, the first semiconducting material contacting the substrate and the second semiconducting material being an exposed surface; forming a first gate spacer along a sidewall of a first gate region on the first nanowire stack and a second gate spacer along a sidewall of a second gate region on the second nanowire stack; oxidizing a portion of the first nanowire stack within the first gate spacer; and removing the first semiconducting material from the first nanowire stack and the second nanowire stack.

公开(公告)号：US11764259B2

公开(公告)日：2023-09-19

申请号：US17384307

申请日：2021-07-23

申请人： International Business Machines Corporation

发明人： Chen Zhang ,  Tenko Yamashita ,  Xin Miao ,  Wenyu Xu ,  Kangguo Cheng

IPC分类号： H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/0649 ,  H01L29/41741 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/66666 ,  H01L29/7827

摘要： A vertical field-effect transistor includes a substrate comprising a semiconductor material; a first set of fins formed from the semiconductor material and extending vertically with respect to the substrate; and a second set of fins extending vertically with respect to the substrate, wherein ones of the second set of fins abut ones of the first set of fins. The second set of fins comprises a dielectric material.