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公开(公告)号：US10421659B2
公开(公告)日：2019-09-24
申请号：US15811471
申请日：2017-11-13
Applicant: InvenSense, Inc.
Inventor： Ilya Gurin , Joseph Seeger , Matthew Thompson
Abstract: A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.
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公开(公告)号：US20190071308A1
公开(公告)日：2019-03-07
申请号：US15694301
申请日：2017-09-01
Applicant: INVENSENSE, INC.
Inventor： Ilya Gurin
Abstract: The present invention relates to semiconductor devices, such as microelectromechanical (MEMS) devices, with improved resilience during manufacturing. In one embodiment, a MEMS device includes a MEMS structure; a substrate situated parallel to the MEMS structure and positioned a first distance from the MEMS structure; and a bump stop structure formed on the substrate between the substrate and the MEMS structure, wherein the bump stop structure substantially traces a perimeter of the substrate, wherein the bump stop structure extends from the substrate to a second distance from the MEMS structure, and wherein the second distance is greater than zero and less than the first distance.
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公开(公告)号：US09731961B2
公开(公告)日：2017-08-15
申请号：US14797013
申请日：2015-07-10
Applicant: InvenSense, Inc.
Inventor： Stephen Lloyd , Ilya Gurin
IPC: B81B7/00
CPC classification number: B81B7/0074 , B81B7/0054 , B81B2203/0315 , B81B2207/012 , B81B2207/07 , B81C1/00238 , H01L2224/48091 , H01L2924/00014
Abstract: A package combining a MEMS substrate, a CMOS substrate and another MEMS substrate in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first MEMS substrate and a CMOS substrate with a first surface and a second surface and where the first MEMS substrate is attached to the first surface of the CMOS substrate. The package further includes a second MEMS substrate with a first surface and a second surface, where the first surface of the second MEMS substrate is attached to the second surface of the CMOS substrate and the second surface of the second MEMS substrate is attached to a packaging substrate. The first MEMS substrate, the CMOS substrate, the second MEMS substrate and the packaging substrate are provided with electrical inter-connects.
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公开(公告)号：US11543229B2
公开(公告)日：2023-01-03
申请号：US17225464
申请日：2021-04-08
Applicant: INVENSENSE, INC.
Inventor： Ilya Gurin , Leonardo Baldasarre
Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.
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公开(公告)号：US20210223024A1
公开(公告)日：2021-07-22
申请号：US17225464
申请日：2021-04-08
Applicant: INVENSENSE, INC.
Inventor： Ilya Gurin , Leonardo Baldasarre
Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.
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Patent Agency Ranking
公开(公告)号：US20190144264A1
公开(公告)日：2019-05-16
申请号：US15811471
申请日：2017-11-13
Applicant: InvenSense, Inc.
Inventor： Ilya Gurin , Joseph Seeger , Matthew Thompson
CPC classification number: B81B3/0013 , B81B3/0008 , B81B3/0027 , B81B3/0086 , B81B2201/0235 , B81B2203/04 , B81B2203/055 , B81C99/003 , G01C19/5719 , G01P15/0802 , G01P15/125 , G01P15/131 , G01P21/00 , G01P2015/0808
Abstract: A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.
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公开(公告)号：US20160244324A1
公开(公告)日：2016-08-25
申请号：US15144046
申请日：2016-05-02
Applicant: InvenSense, Inc.
Inventor： Ilya Gurin
CPC classification number: B81B7/0058 , B81B7/0048 , B81B2203/0315 , B81B2207/012 , B81C1/00674
Abstract: In accordance with an example embodiment of this disclosure, a micro-electro-mechanical system (MEMS) device comprises a substrate, a CMOS die, and a MEMS die, each of which comprises a top side and a bottom side. The bottom side of the CMOS die is coupled to the top side of the substrate, and the MEMS die is coupled to the top side of the CMOS die, and there is a cavity positioned between the CMOS die and the substrate. The cavity may be sealed by a sealing substance, and may be filled with a filler substance (e.g., an adhesive) that is different than the sealing substance (e.g., a gaseous or non-gaseous substance). The cavity may be fully or partially surrounded by one or more downward-protruding portions of the CMOS die and/or one or more upward-protruding portions of the substrate.
Abstract translation: 根据本公开的示例性实施例，微电子机械系统（MEMS）装置包括基板，CMOS管芯和MEMS管芯，每个管芯包括顶侧和底侧。 CMOS裸片的底侧耦合到衬底的顶侧，并且MEMS管芯耦合到CMOS管芯的顶侧，并且存在位于CMOS管芯和衬底之间的空腔。 空腔可以由密封材料密封，并且可以填充与密封物质（例如气态或非气态物质）不同的填充物质（例如粘合剂）。 空腔可以由CMOS管芯的一个或多个向下突出部分和/或衬底的一个或多个向上突出部分完全或部分地包围。
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公开(公告)号：US09340409B1
公开(公告)日：2016-05-17
申请号：US14564725
申请日：2014-12-09
Applicant: InvenSense, Inc.
Inventor： Ilya Gurin
CPC classification number: B81B7/0058 , B81B7/0048 , B81B2203/0315 , B81B2207/012 , B81C1/00674
Abstract: In accordance with an example embodiment of this disclosure, a micro-electro-mechanical system (MEMS) device comprises a substrate, a CMOS die, and a MEMS die, each of which comprises a top side and a bottom side. The bottom side of the CMOS die is coupled to the top side of the substrate, and the MEMS die is coupled to the top side of the CMOS die, and there is a cavity positioned between the CMOS die and the substrate. The cavity may be sealed by a sealing substance, and may be filled with a filler substance (e.g., an adhesive) that is different than the sealing substance (e.g., a gaseous or non-gaseous substance). The cavity may be fully or partially surrounded by one or more downward-protruding portions of the CMOS die and/or one or more upward-protruding portions of the substrate.
Abstract translation: 根据本公开的示例性实施例，微电子机械系统（MEMS）装置包括基板，CMOS管芯和MEMS管芯，每个管芯包括顶侧和底侧。 CMOS裸片的底侧耦合到衬底的顶侧，并且MEMS管芯耦合到CMOS管芯的顶侧，并且存在位于CMOS管芯和衬底之间的空腔。 空腔可以由密封材料密封，并且可以填充与密封物质（例如气态或非气态物质）不同的填充物质（例如粘合剂）。 空腔可以由CMOS管芯的一个或多个向下突出部分和/或衬底的一个或多个向上突出部分完全或部分地包围。
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公开(公告)号：US20230194454A1
公开(公告)日：2023-06-22
申请号：US17559839
申请日：2021-12-22
Applicant: INVENSENSE, INC.
Inventor： Ilya Gurin
CPC classification number: G01N27/18 , G01N33/004 , G01K7/22 , H05B3/20
Abstract: A gas sensor includes a plurality of sensing resistors that vary in resistance based on ambient temperature and the presence of certain gases, such as CO2 and H2O. The responses of each of the sensing resistors vary based on a base temperature of each of the sensing resistors. The base temperatures for each of the sensing resistors and configurations of the sensing resistors are selected to emphasize a response to a gas of interest (e.g., CO2) while de-emphasizing or canceling contributions from ambient temperature and gases that are not of interest (e.g., H2O).
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公开(公告)号：US11230470B2
公开(公告)日：2022-01-25
申请号：US15694301
申请日：2017-09-01
Applicant: INVENSENSE, INC.
Inventor： Ilya Gurin
Abstract: The present invention relates to semiconductor devices, such as microelectromechanical (MEMS) devices, with improved resilience during manufacturing. In one embodiment, a MEMS device includes a MEMS structure; a substrate situated parallel to the MEMS structure and positioned a first distance from the MEMS structure; and a bump stop structure formed on the substrate between the substrate and the MEMS structure, wherein the bump stop structure substantially traces a perimeter of the substrate, wherein the bump stop structure extends from the substrate to a second distance from the MEMS structure, and wherein the second distance is greater than zero and less than the first distance.
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