摘要:
Disclosed is an alkaline storage battery using a negative electrode formed of a hydrogen absorbing alloy capable of absorbing/desorbing hydrogen electrochemically. A three-dimensional structural matter having hydrophobic property is used as a supporter for supporting the hydrogen absorbing alloy of the negative electrode, so that hydrophobic property is given to the surface of the hydrogen absorbing alloy which is in contact with the support, whereby a hydrogen gas generated in a charging period is absorbed by powder of the alloy exposed at a gas phase portion to suppress the increase of the internal gas pressure of the battery.According to the present invention, it is possible to perform rapid charge in a short time because the increase of the internal gas pressure of the battery can be suppressed.
摘要:
Disclosed is an improvement in a negative electrode of an alkaline storage battery, in which the negative electrode is constituted by a hydrogen absorbing alloy capable of absorbing/desorbing hydrogen electrochemically, and a hydrophobic material and a hydrophilic material are provided in a portion of the surface layer of the negative electrode and in the side of the negative electrode respectively so as to properly secure both the wetting property and hydrophobic property of the negative electrode against the alkaline electrolytic solution. Accordingly, a hydrogen can be absorbed electrochemically in the portion of the negative electrode which is wetted by the electrolytic solution and a hydrogen gas generated in charging the battery can be absorbed by a vapor phase reaction in the hydrophobic portion of the negative electrode which is exposed to the vapor phase so that the internal gas pressure can be reduced to thereby make it possible to perform rapid charging.
摘要:
An output circuit for a bus whose output node is connected to a bus, including a first current source connected to a first reference potential, a first semiconductor switching element connected between the first current source and the output node, a current control circuit for controlling the first semiconductor switching element such that the first current source and the output node are connected when a voltage of the output node is lower than a reference voltage, and the first current source and the output node are disconnected when a voltage of the output node is higher than the reference voltage, and a voltage generating circuit which is connected between the output node and a second reference potential, and includes a second semiconductor switching element turned on/off based on an output control signal.
摘要:
A hybrid system control apparatus is provided in which an intercooler is disposed upstream of the motor cooling radiator in a flow path of the ambient air flowing in an engine compartment, and/or is disposed such that at least a portion of the intercooler and a portion of the motor cooling radiator contact each other. The hybrid system control apparatus includes a warm-up portion that increases temperature of the boost air by controlling a load of the engine in cold start of a hybrid system such that the boost pressure from the forced air induction device is equal to or higher than a target boost pressure.
摘要:
Disclosed herein is a communication centralized control system including one master device; a communication bus; and a plurality of slave devices configured to be connected to the master device by the communication bus, wherein the master device and the plurality of slave devices are capable of bidirectional communication via the communication bus, and different channels are allocated to at least polling communication from the master device to the slave devices and interrupt communication from the slave devices to the master device, and communication is carried out with multiplexing on the same line.
摘要:
Disclosed herein is a communication centralized control system including one master device; a communication bus; and a plurality of slave devices configured to be connected to the master device by the communication bus, wherein the master device and the plurality of slave devices are capable of bidirectional communication via the communication bus, and different channels are allocated to at least polling communication from the master device to the slave devices and interrupt communication from the slave devices to the master device, and communication is carried out with multiplexing on the same line.
摘要:
An electrode group E in which a positive electrode 1 and a negative electrode 2 are spirally-rolled interposing a separator 3 is contained in a bottomed cylindrical can 4. A metal exposure portion 1a provided on an end surface of the positive electrode 1 of the electrode group E or a metal-made current collecting plate 9 electrically connected to the metal exposure portion 1a (called a current collecting portion of a positive electrode) and a cover body 8 also functioning as a positive electrode terminal are electrically connected by a metal lead plate 5. One or more electrolyte resistant metal pressers 10 are arranged and electrically connected between the current collecting portion of the positive electrode and the cover body 8. The electrode group E is applied pressure by the cover body 8 and the bottom portion 4a of the bottomed cylindrical can 4.
摘要:
The present invention relates to the use of antibodies against glucose-6-phosphate isomerase (GPI) and like protein for diagnosis of arthritis and the use of said protein for treatment of arthritis. It is also aimed at a process for isolating monoclonal antibodies capable of transferring arthritis and antibodies thereof, as well as a method for determining the anti-arthritis potential of a composition.
摘要:
Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection insulating film, a MSQ film, and a silicon oxide film composing an ILD are RIE dry etched sequentially, and a via is formed on the surface of a substrate for processing reaching the diffusion layer on the substrate for processing. Subsequent process consists of; removing a modified layer formed on the substrate for processing surface because of prior etching using plasma gas by plasma excitation of NH3 gas, and another etching for complete removal of the resist mask by irradiation of hydrogen active species created by hydrogen gas and inert gas, of which example is helium gas or argon gas.
摘要:
After applying a film-forming composition containing a polysiloxane, a pore-forming agent, an onium salt, and a solvent onto a semiconductor substrate, the solvent is evaporated from the film-forming composition in a first heat treatment. Then, a second heat treatment is carried out in an inert-gas atmosphere to promote the polymerization of the polysiloxane and thus form a polysiloxane resin film. Thereafter, a third heat treatment is carried out in an oxidizing-gas ambient to form pores in the polysiloxane resin film.