公开(公告)号：US20130230803A1

公开(公告)日：2013-09-05

申请号：US13866087

申请日：2013-04-19

Applicant: JSR CORPORATION

Inventor： Koji ITO ,  Hirokazu SAKAKIBARA ,  Masafumi HORI ,  Taiichi FURUKAWA

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/004 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325

Abstract: A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed with a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a base polymer, a fluorine-atom-containing polymer, a radiation-sensitive acid generator, a solvent, and a compound. The base polymer has an acid-labile group. The fluorine-atom-containing polymer has a content of fluorine atoms higher than a content of fluorine atoms of the base polymer. The compound has a relative permittivity greater than a relative permittivity of the solvent by at least 15. A content of the compound is no less than 10 parts by mass and no greater than 200 parts by mass with respect to 100 parts by mass of the base polymer.

Abstract translation: 抗蚀剂图案形成方法包括在基板上涂布辐射敏感性树脂组合物以提供抗蚀剂膜。 抗蚀剂膜被曝光。 曝光的抗蚀剂膜用包含不少于80质量％的有机溶剂的显影剂溶液显影。 辐射敏感性树脂组合物包括基础聚合物，含氟原子的聚合物，辐射敏感性酸产生剂，溶剂和化合物。 基础聚合物具有酸不稳定基团。 含氟原子的聚合物的氟原子含量高于基础聚合物的氟原子含量。 化合物的相对介电常数大于溶剂的相对介电常数至少为15.相对于100质量份的碱，该化合物的含量为10质量份以上且200质量份以下 聚合物。

公开(公告)号：US20210166935A1

公开(公告)日：2021-06-03

申请号：US17148729

申请日：2021-01-14

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Tomohiro ODA ,  Hitoshi OSAKI ,  Masafumi HORI ,  Takehiko NARUOKA

IPC: H01L21/027 ,  C08F112/08 ,  C09D125/06 ,  H01L21/28 ,  H01L21/321 ,  H01L21/285 ,  C08F8/00 ,  H01L21/02 ,  H01L21/311

Abstract: A composition for use in selective modification of a base material surface includes a polymer having, at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with a metal, and a solvent.

公开(公告)号：US20190194365A1

公开(公告)日：2019-06-27

申请号：US16289938

申请日：2019-03-01

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Tomohiro ODA ,  Masafumi HORI ,  Hitoshi OSAKI ,  Takehiko NARUOKA

IPC: C08F12/20 ,  C23C16/455 ,  C08F12/08 ,  C08F20/22 ,  B05D7/24 ,  B05D7/14 ,  B05D3/10 ,  B05D3/14

CPC classification number: C08F12/20 ,  B05D3/02 ,  B05D3/107 ,  B05D3/148 ,  B05D7/14 ,  B05D7/24 ,  C08F12/08 ,  C08F20/22 ,  C08L101/04 ,  C23C16/45525

Abstract: A composition includes a first polymer and a solvent. The first polymer includes a first structural unit including a fluorine atom, and a group including a first functional group at an end of a main chain or a side chain of the first polymer. The first functional group is capable of forming a bond with a metal or a metalloid. The first structural unit preferably includes a fluorinated hydrocarbon group. The first structural unit is preferably derived from a (meth)acrylic ester containing a fluorine atom, or a styrene compound containing a fluorine atom. The first structural unit preferably contains 6 or more fluorine atoms.

公开(公告)号：US20130230804A1

公开(公告)日：2013-09-05

申请号：US13866093

申请日：2013-04-19

Applicant: JSR CORPORATION

Inventor： Hirokazu SAKAKIBARA ,  Masafumi HORI ,  Taiichi FURUKAWA ,  Koji ITO

IPC: G03F7/027

CPC classification number: G03F7/038 ,  C07C381/12 ,  C08F220/10 ,  C08F220/24 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/325 ,  Y10S430/114 ,  Y10S430/115

Abstract: A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A− represents —N−—SO2—RD, —COO−, —O− or —SO3−. —SO3− does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation. -A−X+  (1)

Abstract translation: 图案形成方法包括使用辐射敏感组合物在衬底上提供抗蚀剂膜。 抗蚀剂膜被曝光。 使用显影剂溶液显影曝光的抗蚀剂膜。 显影剂溶液含有不少于80质量％的有机溶剂。 辐射敏感组合物包括至少两种组分，包括第一聚合物和辐射敏感性酸产生剂。 第一聚合物包括具有酸不稳定基团的结构单元。 辐射敏感组合物的一种或多种组分具有由式（1）表示的基团。 A-表示-N-SO 2 -R D，-COO-，-O-或-SO 3 - 。 -SO 3 - 不直接键合到具有氟原子的碳原子。 RD表示直链或支链一价烃基等。 X +表示鎓阳离子。 -A-X +（1）

公开(公告)号：US20130224666A1

公开(公告)日：2013-08-29

申请号：US13861416

申请日：2013-04-12

Applicant: JSR Corporation

Inventor： Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Reiko KIMURA ,  Masafumi HORI

IPC: G03F7/004

CPC classification number: G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325

Abstract: A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed using a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer and a radiation-sensitive acid generator. The polymer has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and includes a first structural unit that includes an acid-labile group. The polymer includes less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group.

Abstract translation: 抗蚀剂图案形成方法包括在基板上涂布辐射敏感性树脂组合物以提供抗蚀剂膜。 抗蚀剂膜被曝光。 使用包含不少于80质量％的有机溶剂的显影剂溶液显影曝光的抗蚀剂膜。 辐射敏感性树脂组合物包括聚合物和辐射敏感性酸产生剂。 聚合物的重均分子量以聚苯乙烯当量大于6000表示，并且包括包含酸不稳定基团的第一结构单元。 聚合物包含小于5mol％或0mol％的包含羟基的第二结构单元。

公开(公告)号：US20130224661A1

公开(公告)日：2013-08-29

申请号：US13855749

申请日：2013-04-03

Applicant: JSR CORPORATION

Inventor： Hirokazu SAKAKIBARA ,  Masafumi HORI ,  Koji ITO ,  Reiko KIMURA ,  Taiichi FURUKAWA

IPC: G03F7/20 ,  G03F7/004

CPC classification number: G03F7/20 ,  C08F20/28 ,  C08F2220/283 ,  G03F7/004 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

Abstract: A pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed. A developer solution used in developing the exposed resist film includes no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a first polymer and a radiation-sensitive acid generator. The first polymer includes a first structural unit having an acid-labile group and an alicyclic group. The alicyclic group is capable of avoiding dissociation from a molecular chain by an action of an acid.

Abstract translation: 图案形成方法包括将辐射敏感性树脂组合物涂布在基材上以提供抗蚀剂膜。 抗蚀剂膜被曝光。 显影出抗蚀剂膜。 用于显影曝光的抗蚀剂膜的显影剂溶液包含不少于80质量％的有机溶剂。 辐射敏感性树脂组合物包括第一聚合物和辐射敏感性酸产生剂。 第一聚合物包括具有酸不稳定基团和脂环族基团的第一结构单元。 脂环族基团能够通过酸的作用避免与分子链的离解。

公开(公告)号：US20130216948A1

公开(公告)日：2013-08-22

申请号：US13851158

申请日：2013-03-27

Applicant: JSR CORPORATION

Inventor： Kazuki KASAHARA ,  Hiromitsu NAKASHIMA ,  Masafumi HORI ,  Masafumi YOSHIDA

IPC: G03F7/004

CPC classification number: G03F7/004 ,  C07D307/93 ,  C07D493/18 ,  C08F220/20 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/0275

Abstract: A radiation-sensitive resin composition for forming a resist film includes a polymer including a first structural unit represented by a formula (1) and a second structural unit represented by a formula (2). The first structural unit and the second structural unit are included in an identical polymer molecule or different polymer molecules. R1 represents a hydrogen atom or a methyl group. Q represents a divalent linking group having 1 to 4 carbon atoms. X represents a monovalent lactone group. A part or all of hydrogen atoms included in the monovalent lactone group represented by X are not substituted or substituted. R2 represents a hydrogen atom or a methyl group. Y represents a monovalent lactone group. A part or all of hydrogen atoms included in the monovalent lactone group represented by Y are not substituted or substituted.

Abstract translation: 用于形成抗蚀剂膜的辐射敏感性树脂组合物包括含有由式（1）表示的第一结构单元和由式（2）表示的第二结构单元的聚合物。 第一结构单元和第二结构单元包含在相同的聚合物分子或不同的聚合物分子中。 R1表示氢原子或甲基。 Q表示碳原子数为1〜4的二价连接基团。 X表示单价内酯基。 由X表示的一价内酯基中的一部分或全部氢原子不被取代或取代。 R2表示氢原子或甲基。 Y表示单价内酯基。 由Y表示的一价内酯基中包含的一部分或全部氢原子不被取代或取代。