公开(公告)号：US20130273476A1

公开(公告)日：2013-10-17

申请号：US13852120

申请日：2013-03-28

Applicant: JSR CORPORATION

Inventor： Shin-ya MINEGISHI ,  Satoru MURAKAMI ,  Yushi MATSUMURA ,  Kazuhiko KOMURA ,  Yoshio TAKIMOTO ,  Shin-ya NAKAFUJI ,  Kyoyu YASUDA

IPC: G03F7/004

CPC classification number: G03F7/004 ,  C08G8/08 ,  C08G8/22 ,  C08G8/28 ,  C09D161/06 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  G03F7/40

Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Abstract translation: 图案形成方法包括：（1）抗蚀剂下层膜形成步骤，通过涂布含有酚羟基的树脂的抗蚀剂下层膜形成组合物，在基材的上表面侧上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜的上表面侧形成抗蚀剂图案的抗蚀剂图案形成工序; （3）借助于抗蚀剂图案作为掩模，至少对抗蚀剂下层膜和基板进行干蚀刻的图案形成步骤，以在基板上形成图案; 以及（4）以（1）〜（4）的顺序用碱性溶液除去基板上的抗蚀剂下层膜的抗蚀剂下层膜除去工序。

公开(公告)号：US20130153535A1

公开(公告)日：2013-06-20

申请号：US13714406

申请日：2012-12-14

Applicant: JSR Corporation

Inventor： Shin-ya NAKAFUJI ,  Satoru MURAKAMI ,  Kazuhiko KOUMURA ,  Yuushi MATSUMURA ,  Masayuki MOTONARI ,  Katsuhisa MIZOGUCHI

IPC: G03F7/11

CPC classification number: G03F7/11 ,  G03F7/091 ,  H01L21/0276

Abstract: A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.

Abstract translation: 用于形成抗蚀剂下层膜的树脂组合物包括具有芳环的树脂和具有由下式（i）表示的部分结构的交联剂。 X表示氧原子，硫原子，* -COO-或-NRA-。 R1表示氢原子或C1-30一价烃基。 R2表示羟基，磺胺基，氰基，硝基，C1-30一价烃基，C1-30一价羟基烃基或C1-30一价硫代烃基。 p为1〜3的整数。

公开(公告)号：US20220011672A1

公开(公告)日：2022-01-13

申请号：US17482557

申请日：2021-09-23

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Tomoaki TANIGUCHI ,  Kazunori TAKANASHI

IPC: G03F7/11 ,  C08G8/10 ,  C09D161/06 ,  C07C211/54 ,  C07C39/225 ,  C07D307/36 ,  C07D207/323 ,  C07C39/21

Abstract: The composition contains: a compound which has a group represented by formula (1); and a solvent. In the formula (1), R1 and R2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a bonding site to a part other than the group represented by the following formula (1) in the compound.

公开(公告)号：US20170154782A1

公开(公告)日：2017-06-01

申请号：US14955473

申请日：2015-12-01

Applicant: JSR Corporation

Inventor： Shin-ya NAKAFUJI ,  Goji WAKAMATSU ,  Tsubasa ABE ,  Kazunori SAKAI

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/306 ,  C08G65/40

CPC classification number: C08G65/4043 ,  C08G65/40 ,  C08G65/4031 ,  G03F7/094 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3081

Abstract: A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. R1 and R2 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8.

公开(公告)号：US20160259247A1

公开(公告)日：2016-09-08

申请号：US15159054

申请日：2016-05-19

Applicant: JSR CORPORATION

Inventor： Fumihiro TOYOKAWA ,  Shin-ya NAKAFUJI ,  Gouji WAKAMATSU

IPC: G03F7/11 ,  H01L21/3105 ,  H01L21/3065 ,  H01L21/308 ,  G03F7/26 ,  H01L21/027

CPC classification number: G03F7/11 ,  C07C217/18 ,  C07C279/08 ,  C07C2603/92 ,  C08G8/04 ,  C08G8/20 ,  C08L61/06 ,  G03F7/094 ,  G03F7/26 ,  G03F7/40 ,  H01L21/02057 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31058 ,  C08L61/12

Abstract: A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.

公开(公告)号：US20160085152A1

公开(公告)日：2016-03-24

申请号：US14959223

申请日：2015-12-04

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Fumihiro TOYOKAWA ,  Goji WAKAMATSU ,  Shingo TAKASUGI ,  Tooru KIMURA

IPC: G03F7/11 ,  G03F7/36 ,  C07C15/14 ,  C07C211/50 ,  C07C15/18 ,  G03F7/16 ,  C07C33/28

CPC classification number: G03F7/11 ,  C07C15/14 ,  C07C15/18 ,  C07C15/50 ,  C07C15/54 ,  C07C15/58 ,  C07C25/24 ,  C07C33/28 ,  C07C33/38 ,  C07C39/21 ,  C07C43/215 ,  C07C211/50 ,  C07C211/58 ,  C08F38/00 ,  G03F7/094 ,  G03F7/168 ,  G03F7/36 ,  H01L21/0271

Abstract: A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R1, R2 and R3 each independently represent a group represented by the formula (a). In the formula (a), RA represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. RB represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring.

Abstract translation: 用于成膜的组合物包括由式（1）表示的化合物和溶剂。 在式（1）中，R 1，R 2和R 3各自独立地表示由式（a）表示的基团。 在式（a）中，RA表示氢原子，芳基或未被取代或被羟基和芳基中的至少一个取代的烷基。 RB表示单键或亚芳基。 芳基和亚芳基的芳环上的一部分或全部氢原子可以被卤素原子，羟基，氨基，硫烷基或碳原子数为1〜20的一价有机基团取代 而不包括芳环。