公开(公告)号：US20150177556A1

公开(公告)日：2015-06-25

申请号：US14547650

申请日：2014-11-19

Applicant: Japan Display Inc.

Inventor： Yasunori FUKUMOTO ,  Toshihide JINNAI ,  Koji SATO

IPC: G02F1/1333 ,  G02F1/1343 ,  C23C16/50

CPC classification number: H01L27/1259 ,  G02F1/133345 ,  G02F1/134363 ,  H01L29/768

Abstract: According to one embodiment, provided is an array substrate that can effectively prevent an oxide conductive film and a silicon nitride film on the oxide conductive film from peeling without deteriorating reliability. A method for manufacturing the array substrate includes a surface treatment step and a nitride film forming step. In the surface treatment step, by plasma discharge, the oxide conductive film is cleaned without being reduced, and surface layers of the insulating film layer not covered by the oxide conductive film and portions of the insulating film layer in the regions covered by the oxide conductive film are etched to form recesses leading to portions under the oxide conductive film. In the nitride film forming step, successively from the surface treatment step, the silicon nitride film is formed by plasma CVD so as to cover the recesses and the oxide conductive film.

Abstract translation: 根据一个实施方式，提供了能够有效地防止氧化物导电膜上的氧化物导电膜和氮化硅膜剥离而不劣化可靠性的阵列基板。 阵列基板的制造方法包括表面处理工序和氮化膜形成工序。 在表面处理步骤中，通过等离子体放电，氧化物导电膜被清洁而不被还原，并且绝缘膜层的表面层未被氧化物导电膜覆盖，并且绝缘膜层的部分被氧化物导电覆盖的区域 蚀刻以形成通向氧化物导电膜下方的部分的凹部。 在氮化膜形成工序中，从表面处理工序开始，通过等离子体CVD形成氮化硅膜，以覆盖凹部和氧化物导电膜。

公开(公告)号：US20240128273A1

公开(公告)日：2024-04-18

申请号：US18393873

申请日：2023-12-22

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Toshihide JINNAI ,  Ryo ONODERA ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1285 ,  H01L29/66742 ,  H01L29/7869

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US20240069400A1

公开(公告)日：2024-02-29

申请号：US18503351

申请日：2023-11-07

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/786 ,  H10K50/86 ,  H10K59/131

CPC classification number: G02F1/1368 ,  G02F1/136209 ,  G02F1/136277 ,  G02F1/136286 ,  H01L29/78633 ,  H01L29/78672 ,  H10K50/865 ,  H10K59/131

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US20230317853A1

公开(公告)日：2023-10-05

申请号：US18328788

申请日：2023-06-05

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Tomoyuki ITO ,  Toshihide JINNAI ,  lsao SUZUMURA ,  Akihiro HANADA ,  Ryo ONODERA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66

CPC classification number: H01L29/78627 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  H01L27/127 ,  H01L21/02178 ,  H01L21/02565 ,  H01L21/426 ,  H01L21/47573 ,  H01L21/47635 ,  H01L29/66969 ,  H01L27/1225 ,  G02F1/1368

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US20230074655A1

公开(公告)日：2023-03-09

申请号：US17987887

申请日：2022-11-16

Applicant: Japan Display Inc.

Inventor： Toshihide JINNAI ,  Hajime WATAKABE ,  Akihiro HANADA ,  Ryo ONODERA ,  lsao SUZUMURA

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

公开(公告)号：US20220029026A1

公开(公告)日：2022-01-27

申请号：US17499908

申请日：2021-10-13

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Tomoyuki ITO ,  Toshihide JINNAI ,  lsao SUZUMURA ,  Akihiro HANADA ,  Ryo ONODERA

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L21/4763 ,  H01L29/49 ,  H01L21/426 ,  H01L29/423 ,  H01L29/24 ,  H01L21/4757 ,  G02F1/1368

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US20210074736A1

公开(公告)日：2021-03-11

申请号：US16996920

申请日：2020-08-19

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368

Abstract: The purpose of the present invention is to prevent the TFT in the semiconductor device is shorted by existence of a foreign substance. An example of the structure to solve the problem is: A semiconductor device comprising: a scan line extends in a first direction, a first signal line extends in a second direction, which crosses the first direction, a second signal line extends parallel to the first signal line, an electrode is disposed between the first signal line and the second signal line, wherein a first TFT connects with the second signal line in a vicinity of the second signal line, a second TFT connects with the electrode in a vicinity of the first signal line, the first TFT and the second TFT are formed from oxide semiconductors, the first TFT and the second TFT are connected in series.

公开(公告)号：US20200264484A1

公开(公告)日：2020-08-20

申请号：US16787054

申请日：2020-02-11

Applicant: Japan Display Inc.

Inventor： Toshihide JINNAI ,  Hajime WATAKABE ,  Akihiro HANADA ,  Ryo ONODERA ,  lsao SUZUMURA

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/32 ,  H01L29/786 ,  H01L27/12

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

公开(公告)号：US20160116791A1

公开(公告)日：2016-04-28

申请号：US14884026

申请日：2015-10-15

Applicant: Japan Display Inc.

Inventor： Toshihide JINNAI ,  Hirofumi MIZUKOSHI

IPC: G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1337 ,  H01L27/12 ,  G02F1/1368

CPC classification number: G02F1/133345 ,  G02F1/134363 ,  G02F1/136286 ,  G02F2001/134372 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1255

Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating film covering the semiconductor layer, a gate line extended in a first direction on the first insulating film to intersect the semiconductor layer, a second insulating film covering the gate line, a first common electrode formed on the second insulating film, a third insulating film covering the first common electrode, a source line which is extended in a second direction on the third insulating film and which is in contact with the semiconductor layer, and a fourth insulating film which covers the source line and which has a thickness greater than a thickness of the third insulating film.

Abstract translation: 根据一个实施例，显示装置包括半导体层，覆盖半导体层的第一绝缘膜，在第一绝缘膜上沿第一方向延伸以与半导体层相交的栅极线，覆盖栅极线的第二绝缘膜， 形成在第二绝缘膜上的第一公共电极，覆盖第一公共电极的第三绝缘膜，在第三绝缘膜上沿第二方向延伸并与半导体层接触的源极线，以及第四绝缘体 膜覆盖源极线，其厚度大于第三绝缘膜的厚度。