公开(公告)号：US06909583B2

公开(公告)日：2005-06-21

申请号：US10437090

申请日：2003-05-13

申请人： Min Li ,  Simon H. Liao ,  Masashi Sano ,  Kiyoshi Noguchi ,  Kochan Ju ,  Cheng T. Horng

发明人： Min Li ,  Simon H. Liao ,  Masashi Sano ,  Kiyoshi Noguchi ,  Kochan Ju ,  Cheng T. Horng

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.

摘要翻译： 一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。 根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。

公开(公告)号：US07152304B2

公开(公告)日：2006-12-26

申请号：US11036959

申请日：2005-01-14

申请人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Fong Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

发明人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Fong Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

公开(公告)号：US07072151B2

公开(公告)日：2006-07-04

申请号：US10782671

申请日：2004-02-19

申请人： Charles C. Lin ,  Cheng T. Horng ,  Min Li ,  Kochan Ju

发明人： Charles C. Lin ,  Cheng T. Horng ,  Min Li ,  Kochan Ju

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： A method for forming a top spin-valve SyAP GMR read sensor having a novel conductive lead overlay configuration and the sensor so formed. The lead overlay electrically contacts the sensor at a position within the SyAP pinned layer, thus simultaneously assuring improved electrical contact and destroying the GMR properties of the sensor at the junction to improve the definition of the sensor track width.

公开(公告)号：US06987651B2

公开(公告)日：2006-01-17

申请号：US11091623

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US06953601B2

公开(公告)日：2005-10-11

申请号：US10167859

申请日：2002-06-11

申请人： Min Li ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  Simon Liao ,  Kochan Ju

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  H01L43/10 ,  B05D5/00 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/10

摘要： Reduction of the free layer thickness in GMR devices is desirable in order to meet higher signal requirements, besides improving the GMR ratio itself. However, thinning of the free layer reduces the GMR ratio and leads to poor thermal stability. This problem has been overcome by making AP2 from an inverse GMR material and by changing the free layer from a single uniform layer to a ferromagnetic layer AFM (antiferromagnetically) coupled to a layer of inverse GMR material. Examples of alloys that may be used for the inverse GMR materials include FeCr, NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling can be replaced by a layer of chromium. A process to manufacture the structure is also described.

摘要翻译： 为了满足更高的信号要求，除了改善GMR比率本身外，希望降低GMR器件中的自由层厚度。 然而，自由层的减薄降低了GMR比并导致差的热稳定性。 通过从反GMR材料制备AP 2并通过将自由层从单个均匀层改变为耦合到反向GMR材料层的铁磁层AFM（反铁磁性）而已经克服了该问题。 可用于逆GMR材料的合金的实例包括FeCr，NiFeCr，NiCr，CoCr，CoFeCr和CoFeV。 此外，通常用于实现反铁磁耦合的钌层可以被铬层代替。 还描述了制造该结构的方法。

公开(公告)号：US20050168879A1

公开(公告)日：2005-08-04

申请号：US11091099

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

摘要翻译： 提供基于纳米氧化物的电流 - 垂直平面（CPP）磁阻（MR）传感器堆叠，以及用于形成这种堆叠的方法。 相对于完全由金属层制成的CPP叠层，这种堆叠具有增加的电阻和增强的磁阻特性。 通过在铁磁层和非磁性间隔层之间插入磁性纳米氧化物层来提供所述增强的性质，由此所述纳米氧化物层增加电阻并显示自旋过滤性质。 提供了各种类型的CPP传感器堆叠，其中都具有形成在其中的纳米氧化物层，包括自旋阀型和合成反铁磁性钉扎层型自旋阀型。 所述堆叠也可以彼此形成以提供不同类型的叠层。

公开(公告)号：US06903904B2

公开(公告)日：2005-06-07

申请号：US10277453

申请日：2002-10-22

申请人： Min Li ,  Kochan Ju ,  Simon Liao

发明人： Min Li ,  Kochan Ju ,  Simon Liao

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01F41/30

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49044

摘要： In current synthetically pinned CPP SV designs, AP2 always makes a negative contribution to the device's GMR since its magnetization direction must be anti-parallel to the pinned layer (AP1). This effect has been reduced by replacing the conventional single layer AP2, that forms part of the synthetic pinned layer, with a multilayer structure into which has been inserted at least one layer of a material such as tantalum that serves to depolarize the spin of electrons that traverse its interfaces. The result is a reduction of said negative contribution by AP2, leading to a significant increase in the GMR ratio.

摘要翻译： 在目前的合成固定CPP SV设计中，AP2总是对器件的GMR做出负面的贡献，因为它的磁化方向必须反平行于固定层（AP1）。 通过用形成多层结构的多层结构替代形成合成钉扎层的一部分的常规单层AP2，已经减少了这种效果，其中已经插入至少一层诸如钽的材料，其用于使电子的自旋去极化 遍历其界面。 结果是减少AP2的负面贡献，导致GMR比例的显着增加。

公开(公告)号：US06775903B2

公开(公告)日：2004-08-17

申请号：US09953546

申请日：2001-09-17

申请人： Cheng T. Horng ,  Kochan Ju ,  Mao-Min Chen ,  Min Li ,  Ru-Ying Tong ,  Simon Liao

发明人： Cheng T. Horng ,  Kochan Ju ,  Mao-Min Chen ,  Min Li ,  Ru-Ying Tong ,  Simon Liao

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49039 ,  Y10T29/49044 ,  Y10T29/49055

摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.

摘要翻译： 用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。 包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。 这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。 由此生产的传感器结构适用于高密度应用。

公开(公告)号：US07477491B2

公开(公告)日：2009-01-13

申请号：US11268076

申请日：2005-11-07

申请人： Min Li ,  Kunliang Zhang ,  Masashi Sano ,  Koichi Terunuma ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  Kunliang Zhang ,  Masashi Sano ,  Koichi Terunuma ,  Simon Liao ,  Kochan Ju

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3268 ,  H01F41/305 ,  Y10T29/49044

摘要： It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.

摘要翻译： 已经发现，在CoFe或CoFe / NiFe复合材料中插入铜层压体导致CPP GMR和DRA的值更高。 然而，这种类型的结构表现出非常负的磁致伸缩，在-10-6至-10-5的高度范围内。 通过给铜层压板进行氧曝光解决了这个问题。当这样做时，发现自由层具有非常低的正磁致伸缩常数。 此外，磁致伸缩常数的值可以通过改变自由层的厚度和/或氧处理的铜层压板的位置和数量来调节。

公开(公告)号：US20060203382A1

公开(公告)日：2006-09-14

申请号：US11435053

申请日：2006-05-16

申请人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

发明人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/187 ,  G11B5/245 ,  G11B5/3156 ,  G11B5/465 ,  Y10T29/49032 ,  Y10T29/49043

摘要： Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antiferromagnetic coupling layer. Strong magnetostatic coupling between the outer layers causes their magnetization directions to automatically be antiparallel to one another, unless overcome by the more powerful write field, leaving the structure with a low net magnetic moment. The thickness of the middle layer must be carefully controlled.

摘要翻译： 单写磁极往往具有大的形状各向异性，这在实际写入时导致非常大的残余磁场。 现在已经通过给写磁极制成三层层叠体的形式来消除这种情况，其中两个铁磁层被非磁性或反铁磁性耦合层分开。 外层之间的强静磁耦合使得它们的磁化方向自动地相互反平行，除非由更强大的写入场来克服，使结构具有低的净磁矩。 中间层的厚度必须仔细控制。