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    Compound semiconductor substrate comprising a multilayer buffer layer
    12.
    发明授权
    Compound semiconductor substrate comprising a multilayer buffer layer 有权
    化合物半导体衬底包括多层缓冲层

    公开(公告)号：US08212288B2

    公开(公告)日：2012-07-03

    申请号：US12879035

    申请日：2010-09-10

    申请人： Jun Komiyama ,  Kenichi Eriguchi ,  Hiroshi Oishi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

    发明人： Jun Komiyama ,  Kenichi Eriguchi ,  Hiroshi Oishi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

    IPC分类号： H01L21/02

    CPC分类号： H01L21/0254 ,  H01L21/02458 ,  H01L21/02507

    摘要： A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6≦X≦1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1≦y≦0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.

    摘要翻译： 一种禁止产生裂纹或翘曲的化合物半导体衬底，优选用于常闭型高击穿电压器件，其中AlxGa1-xN单晶层（0.6＆amp; NlE; X＆amp; NlE; 1.0 ）含有1×1018原子/ cm 3至1×1021原子/ cm3的碳和含有1×10 17原子/ cm 3至1×1021原子/ cm 3的碳的Al y Ga 1-y N单晶层（0.1＆lt; 1lE; y＆nlE; 0.5） 交替重复堆叠，并且在Si单晶衬底1上沉积具有碳浓度为5×10 17原子/ cm 3以下的电子传输层31和电子供给层32的氮化物活性层3 订购。 Al x Ga 1-x N单晶层21和AlGa1-yN单晶层22的碳浓度分别从衬底1侧朝向上述有源层3侧减小。 以这种方式制造化合物半导体衬底。

    Nitride semiconductor substrate and method of manufacturing the same
    14.
    发明授权
    Nitride semiconductor substrate and method of manufacturing the same 有权
    氮化物半导体衬底及其制造方法

    公开(公告)号：US08785942B2

    公开(公告)日：2014-07-22

    申请号：US13352987

    申请日：2012-01-18

    申请人： Akira Yoshida ,  Jun Komiyama ,  Yoshihisa Abe ,  Hiroshi Oishi ,  Kenichi Eriguchi ,  Shunichi Suzuki

    发明人： Akira Yoshida ,  Jun Komiyama ,  Yoshihisa Abe ,  Hiroshi Oishi ,  Kenichi Eriguchi ,  Shunichi Suzuki

    IPC分类号： H01L29/15

    CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7787

    摘要： A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).

    摘要翻译： 提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法，其允许更高的阈值电压和电流崩溃的改善。 在具有衬底1的氮化物半导体衬底10中，形成在衬底1的一个主平面上的缓冲层2，形成在缓冲层2上的中间层3，形成在中间层3上的电子传输层4和 形成在电子输送层4上的电子供给层5，中间层3的厚度为200nm〜1500nm，碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3，为AlxGa1-xN（ 0.05＆nlE; x＆lt; L; 0.24），电子传输层4的厚度为5nm〜200nm，为Al y Ga 1-y N（0＆nl E; y＆nlE; 0.04）。

    COMPOUND SEMICONDUCTOR SUBSTRATE
    15.
    发明申请
    COMPOUND SEMICONDUCTOR SUBSTRATE 有权
    化合物半导体基板

    公开(公告)号：US20110062556A1

    公开(公告)日：2011-03-17

    申请号：US12879035

    申请日：2010-09-10

    申请人： Jun KOMIYAMA ,  Kenichi Eriguchi ,  Hiroshi Oishi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

    发明人： Jun KOMIYAMA ,  Kenichi Eriguchi ,  Hiroshi Oishi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

    IPC分类号： H01L29/20

    CPC分类号： H01L21/0254 ,  H01L21/02458 ,  H01L21/02507

    摘要： A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6≦X≦1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1≦y≦0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlyGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.

    摘要翻译： 一种禁止产生裂纹或翘曲的化合物半导体衬底，优选用于常闭型高击穿电压器件，其中AlxGa1-xN单晶层（0.6＆amp; NlE; X＆amp; NlE; 1.0 ）含有1×1018原子/ cm 3至1×1021原子/ cm3的碳和含有1×10 17原子/ cm 3至1×1021原子/ cm 3的碳的Al y Ga 1-y N单晶层（0.1＆lt; 1lE; y＆nlE; 0.5） 交替重复堆叠，并且在Si单晶衬底1上沉积具有碳浓度为5×10 17原子/ cm 3以下的电子传输层31和电子供给层32的氮化物活性层3 订购。 Al x Ga 1-x N单晶层21和Al y Ga 1-y N单晶层22的碳浓度分别从衬底1侧朝向上述有源层3侧减小。 以这种方式制造化合物半导体衬底。

    Three-dimensional shape-measuring system
    17.
    发明授权
    Three-dimensional shape-measuring system 失效
    三维形状测量系统

    公开(公告)号：US06798527B2

    公开(公告)日：2004-09-28

    申请号：US10128523

    申请日：2002-04-24

    申请人： Tadashi Fukumoto ,  Shigeru Osaki ,  Masahiro Ariizumi ,  Norio Matsunaga ,  Yoshihisa Abe

    发明人： Tadashi Fukumoto ,  Shigeru Osaki ,  Masahiro Ariizumi ,  Norio Matsunaga ,  Yoshihisa Abe

    IPC分类号： G01B1124

    CPC分类号： G01B11/245 ,  G01B11/2518

    摘要： An object of the present invention is to provide a method for accurately measuring a three-dimensional shape of a measuring subject independent of the surface shape of the measuring subject, and another object thereof is to shorten the time from the measurements of the measuring subject until three-dimensional shape data is obtained so as to carry out efficient measuring operations. In a three-dimensional measuring system 1 that measures a three-dimensional shape of a measuring subject, two three-dimensional measuring devices 10, 20 are placed. The three-dimensional measuring device 10 measures a measuring subject placed in a measuring space 3 by allowing a laser slit light L1 in a longitudinal direction to scan in a lateral direction. Moreover, the three-dimensional measuring device 20 measures the measuring subject placed in a measuring space 3 by allowing the laser slit light L1 in a lateral direction to scan in a longitudinal direction.

    摘要翻译： 本发明的一个目的是提供一种用于与测量对象的表面形状无关地精确地测量测量对象的三维形状的方法，并且其另一个目的是缩短从测量对象的测量开始的时间，直到 获得三维形状数据，以便执行有效的测量操作。 在测量测量对象的三维形状的三维测量系统1中，放置两个三维测量装置10,20。 三维测量装置10通过允许沿纵向的激光狭缝光L1沿横向扫描来测量放置在测量空间3中的测量对象。 此外，三维测量装置20通过使激光狭缝光L1在横向上沿纵向扫描来测量放置在测量空间3中的测量对象。

    Method for carburizing tantalum container
    18.
    发明授权
    Method for carburizing tantalum container 有权
    钽容器渗碳方法

    公开(公告)号：US09435018B2

    公开(公告)日：2016-09-06

    申请号：US13990078

    申请日：2011-07-06

    申请人： Masanari Watanabe ,  Yoshihisa Abe

    发明人： Masanari Watanabe ,  Yoshihisa Abe

    IPC分类号： C23C8/64

    CPC分类号： C23C8/64

    摘要： Provided is a method for carburizing a tantalum container which can easily control the carburization thicknesses of various portions of the tantalum container and carburize the tantalum container with a uniform thickness. A method for carburizing a tantalum container 1 made of tantalum or a tantalum alloy to allow carbon to penetrate the tantalum container 1 includes the steps of: supporting the tantalum container 1 on a support member 5, 6 provided in a chamber 3 and setting the tantalum container 1 in the chamber 3; and reducing the pressure inside the chamber 3 and heating the interior of the chamber 3, wherein a carbon source is placed in the vicinity of a portion of the tantalum container 1 hard to carburize.

    摘要翻译： 本发明提供一种能够容易地控制钽容器的各部分的渗碳厚度并以均匀厚度渗碳钽容器的钽容器渗碳的方法。 将由钽或钽合金制成的钽容器1渗碳以使碳贯穿钽容器1的方法包括以下步骤：将钽容器1支撑在设置在腔室3中的支撑构件5,6上，并将钽 容器1在腔室3中; 并且减小室3内的压力并加热室3的内部，其中将碳源放置在钽容器1的一部分附近难以渗碳。

    METHOD FOR CARBURIZING TANTALUM MEMBER, AND TANTALUM MEMBER
    19.
    发明申请
    METHOD FOR CARBURIZING TANTALUM MEMBER, AND TANTALUM MEMBER 有权
    用于加工TANTALUM会员和TANTALUM会员的方法

    公开(公告)号：US20120067462A1

    公开(公告)日：2012-03-22

    申请号：US13322936

    申请日：2010-05-25

    申请人： Yoshihisa Abe ,  Masanari Watanabe ,  Osamu Tamura

    发明人： Yoshihisa Abe ,  Masanari Watanabe ,  Osamu Tamura

    IPC分类号： C23C8/64

    CPC分类号： C23C8/64

    摘要： Provided is a method for carburizing a tantalum member whereby the tantalum member is less deformed by carburization and can be carburized with good flatness of the planar part thereof and in a uniform manner. The method is a method for subjecting a tantalum member 1 made of tantalum or a tantalum alloy and having a planar part 1a to a carburization process for allowing carbon to penetrate the member 1 from the surface toward the inner portion thereof and includes the steps of: setting the tantalum member 1 in a chamber 3 containing a carbon source by supporting the planar part 1a on a plurality of support rods 6 tapered at distal ends 6a thereof; and subjecting the tantalum member 1 to a carburization process by reducing in pressure and heating the interior of the chamber 3 to allow carbon derived from the carbon source to penetrate the tantalum member 1 from the surface thereof.

    摘要翻译： 提供了一种钽构件的渗碳方法，由此钽构件通过渗碳而变形较小，并且可以以均匀的方式使其平面部分具有良好的平坦度渗碳。 该方法是使由钽或钽合金制成的具有平面部分1a的钽元件1经受渗碳处理以使碳从表面向内部渗入元件1的方法，包括以下步骤： 将钽构件1设置在容纳碳源的室3中，通过将平面部1a支撑在多个在其远端6a处成锥形的支撑杆6上; 并且通过降低压力并对室3的内部进行加热，使钽构件1进行渗碳处理，以使来自碳源的碳从其表面渗入钽构件1。

    Method and system for three-dimensional measurement and method and device for controlling manipulator
    20.
    发明授权
    Method and system for three-dimensional measurement and method and device for controlling manipulator 失效
    用于三维测量的方法和系统以及用于控制机械手的方法和装置

    公开(公告)号：US07764386B2

    公开(公告)日：2010-07-27

    申请号：US11527283

    申请日：2006-09-26

    申请人： Shinichi Horita ,  Yoshihisa Abe

    发明人： Shinichi Horita ,  Yoshihisa Abe

    IPC分类号： G01B11/24

    CPC分类号： G01B11/25 ,  G01B11/002

    摘要： A method and system are provided which can easily determine relative positions and postures of a three-dimensional measurement device and an object when the measurement device is used to measure the object using a manipulator. The method includes fixing one of the measurement device and the object, supporting the other at a support point with the manipulator so that a position and support posture of the other can be changed, conducting first measurement with the support point being set to first position and posture, changing the support point to second position and posture so that the second position is a position where the posture is changed, about a reference position within a measurable area of the measurement device in the first measurement, to an opposite side by a degree equal to a portion corresponding to a change from the first posture to the second posture, and conducting second measurement.

    摘要翻译： 提供了一种方法和系统，其可以容易地确定当使用测量装置使用操纵器测量物体时三维测量装置和物体的相对位置和姿势。 所述方法包括固定所述测量装置和所述物体中的一个，在所述操纵器的支撑点处支撑另一个，使得可以改变所述另一个的位置和支撑姿势，在所述支撑点被设置为第一位置的情况下进行第一测量，以及 将支撑点改变为第二位置和姿势，使得第二位置是在第一测量中围绕测量装置的可测量区域内的参考位置改变姿势的位置，相对于等于 到对应于从第一姿势到第二姿势的变化的部分，并进行第二测量。