公开(公告)号：US20120154846A1

公开(公告)日：2012-06-21

申请号：US12970884

申请日：2010-12-16

申请人： Eric Hoarau ,  Jun Zeng ,  I-Jong Lin

发明人： Eric Hoarau ,  Jun Zeng ,  I-Jong Lin

IPC分类号： G06K15/02 ,  G06F3/12

CPC分类号： G06F11/3006 ,  G06F11/3072

摘要： Systems and methods of data filtering for a print service provider (PSP) are disclosed. An exemplary method includes receiving a plurality of print service parameters. The method also includes filtering the plurality of print service parameters, wherein a portion of the received plurality of print service parameters are retained in machine readable format. The method also includes saving the filtered print service parameters for enhancing automatic and manual print production processes.

摘要翻译： 公开了打印服务提供商（PSP）的数据过滤系统和方法。 一种示例性方法包括接收多个打印服务参数。 该方法还包括对多个打印服务参数进行过滤，其中所接收的多个打印服务参数的一部分以机器可读格式保留。 该方法还包括保存过滤的打印服务参数以增强自动和手动打印生产过程。

公开(公告)号：US20120098056A1

公开(公告)日：2012-04-26

申请号：US13197168

申请日：2011-08-03

申请人： Richard A. Blanchard ,  Jun Zeng

发明人： Richard A. Blanchard ,  Jun Zeng

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/7813 ,  H01L21/2257 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/51 ,  H01L29/66727 ,  H01L29/66734

摘要： A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A phosphosilicate glass layer is positioned above the insulated gate and a polysilicon layer is positioned above the polysilicate glass layer. Source and body diffusions of opposite conductivity types are positioned adjacent to a sidewall of the trench. A drift region is positioned to receive majority carriers which have been injected by the source, and which have passed through the body diffusion. A drain region is positioned to receive majority carriers which have passed through the drift region. The gate is capacitively coupled to control inversion of a portion of the body region. As an alternative, a dielectric layer may be used in place of the doped glass where permanent charge is positioned in the dielectric layer.

摘要翻译： 垂直电流装置包括沟槽，该沟槽包括绝缘栅极并向下延伸到第一导电型半导体材料中。 磷硅酸盐玻璃层位于绝缘栅极之上，多晶硅层位于聚硅酸盐玻璃层之上。 相反导电类型的源极和体扩散定位成与沟槽的侧壁相邻。 漂移区域被定位成接收已经被源注入并已经通过身体扩散的多数载体。 漏极区域被定位成接收已经通过漂移区域的多数载流子。 栅极电容耦合以控制身体区域的一部分的反转。 作为替代，可以使用电介质层代替在电介质层中定位永久电荷的掺杂玻璃。

公开(公告)号：US20120098055A1

公开(公告)日：2012-04-26

申请号：US13175975

申请日：2011-07-05

申请人： Mohamed N. Darwish ,  Jun Zeng ,  Richard A. Blanchard

发明人： Mohamed N. Darwish ,  Jun Zeng ,  Richard A. Blanchard

IPC分类号： H01L29/78

CPC分类号： H01L29/7393 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0873 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/402 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7816

摘要： Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types.

摘要翻译： 功率半导体器件和相关方法，其中多数载流子流被分成平行的流经两个相反导电类型的漂移区域。

公开(公告)号：US20120062934A1

公开(公告)日：2012-03-15

申请号：US12879094

申请日：2010-09-10

申请人： Eric Hoarau ,  Jun Zeng ,  I-Jong Lin

发明人： Eric Hoarau ,  Jun Zeng ,  I-Jong Lin

IPC分类号： G06F3/12

CPC分类号： G06Q10/0633 ,  G06Q10/04 ,  G06Q10/063 ,  G06Q10/0639

摘要： Benchmarking for a print service provider (PSP) is disclosed. An exemplary method includes receiving a plurality of automatic print service parameters in real-time, and at substantially the same time, receiving a plurality of manual print service parameters. The method also includes deriving performance metrics of the PSP based on based on predictive methods using the automatic and manual print service parameters. The method also includes comparing the derived performance metrics to actual performance at the PSP. The method also includes generating efficiency metrics for automatic and manual print production processes based on the comparison.

摘要翻译： 披露了印刷服务提供商（PSP）的基准。 一种示例性方法包括实时地接收多个自动打印服务参数，并且基本上同时接收多个手动打印服务参数。 该方法还包括基于使用自动和手动打印服务参数的预测方法导出PSP的性能度量。 该方法还包括将导出的性能指标与PSP中的实际性能进行比较。 该方法还包括基于比较产生自动和手动打印生产过程的效率度量。

公开(公告)号：US20110254088A1

公开(公告)日：2011-10-20

申请号：US13089326

申请日：2011-04-19

申请人： Mohamed N. Darwish ,  Jun Zeng ,  Shih-Tzung Su ,  Richard A. Blanchard

发明人： Mohamed N. Darwish ,  Jun Zeng ,  Shih-Tzung Su ,  Richard A. Blanchard

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734

摘要： Semiconductor power devices, and related methods, wherein a recessed contact makes lateral ohmic contact to the source diffusion, but is insulated from the underlying recessed field plate (RFP). Such an insulated RFP is here referred to as an embedded recessed field plate (ERFP).

摘要翻译： 半导体功率器件和相关方法，其中凹陷接触件对源极扩散进行横向欧姆接触，但与下面的凹陷场板（RFP）绝缘。 这种绝缘RFP在这里被称为嵌入式凹入场板（ERFP）。

公开(公告)号：US20110169103A1

公开(公告)日：2011-07-14

申请号：US13004054

申请日：2011-01-11

申请人： Mohamed N. Darwish ,  Jun Zeng

发明人： Mohamed N. Darwish ,  Jun Zeng

IPC分类号： H01L29/78

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0856 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/16 ,  H01L29/404 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/7813 ,  H01L29/7823 ,  H01L29/7827 ,  H01L29/7835 ,  H03K17/687

摘要： N-channel power semiconductor devices in which an insulated field plate is coupled to the drift region, and immobile electrostatic charge is also present at the interface between the drift region and the insulation around the field plate. The electrostatic charge permits OFF-state voltage drop to occur near the source region, in addition to the voltage drop which occurs near the drain region (due to the presence of the field plate).

摘要翻译： 其中绝缘场板耦合到漂移区的N沟道功率半导体器件，并且固定静电电荷也存在于漂移区和场板周围的绝缘体之间的界面处。 除了在漏极区附近发生的电压降（由于场板的存在）外，静电电荷还允许在源极区域附近发生OFF状态电压降。

公开(公告)号：US20110079843A1

公开(公告)日：2011-04-07

申请号：US12759696

申请日：2010-04-13

申请人： Mohamed N. Darwish ,  Jun Zeng ,  Richard A. Blanchard

发明人： Mohamed N. Darwish ,  Jun Zeng ,  Richard A. Blanchard

IPC分类号： H01L29/78

CPC分类号： H01L29/7811 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0873 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/408 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/8611

摘要： Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.

摘要翻译： 使用重新焊接的沟槽的功率器件在其侧壁处或附近具有永久电荷。 这些沟槽垂直延伸到漂移区域。

公开(公告)号：US20100239631A1

公开(公告)日：2010-09-23

申请号：US12524849

申请日：2008-01-31

申请人： David Gerard Bourke ,  Xianyong Bu ,  Christopher John Burns ,  Anthony Nicholas Cuzzupe ,  John Thomas Feutrill ,  Tracy Leah Nero ,  Beata Maria Blannin ,  Jun Zeng ,  Shaun Patrick Gaynor

发明人： David Gerard Bourke ,  Xianyong Bu ,  Christopher John Burns ,  Anthony Nicholas Cuzzupe ,  John Thomas Feutrill ,  Tracy Leah Nero ,  Beata Maria Blannin ,  Jun Zeng ,  Shaun Patrick Gaynor

IPC分类号： A61K9/00 ,  C07D239/28 ,  C07D239/24 ,  C07D413/06 ,  A61K31/495 ,  A61K31/505 ,  A61K31/5377 ,  A61P35/00 ,  A61P25/00 ,  A61P37/02

CPC分类号： C07D413/12 ,  A61K31/505 ,  A61K31/506 ,  C07D239/38 ,  C07D239/47 ,  C07D401/12 ,  C07D401/14 ,  C07D403/12 ,  C07D405/12 ,  C07D413/14 ,  C07D417/12 ,  C07D417/14 ,  C07D487/00 ,  C07D487/02

摘要： The present invention relates to thiopyrimidine-based compounds that are inhibitors of protein kinases including JAK kinases. In particular, the compounds are selective for JAK1, JAK2 or JAK3 kinases and combinations thereof such as JAK1 and JAK2. The kinase inhibitors can be used in the treatment of kinase associated diseases such as immunological and inflammatory diseases including organ transplants; hyperproliferative diseases including cancer and myeloproliferative diseases; viral diseases; metabolic diseases and vascular diseases.

摘要翻译： 本发明涉及作为包括JAK激酶在内的蛋白激酶抑制剂的硫嘧啶类化合物。 特别地，这些化合物对JAK1，JAK2或JAK3激酶及其组合如JAK1和JAK2是选择性的。 激酶抑制剂可用于治疗激酶相关疾病，例如免疫学和炎性疾病，包括器官移植物; 过度增生性疾病，包括癌症和骨髓增生性疾病; 病毒性疾病 代谢疾病和血管疾病。

公开(公告)号：US20100219468A1

公开(公告)日：2010-09-02

申请号：US12626523

申请日：2009-11-25

申请人： Jun Zeng ,  Mohamed N. Darwish

发明人： Jun Zeng ,  Mohamed N. Darwish

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1079 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/408 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4975 ,  H01L29/7811 ,  H01L29/7813

摘要： Vertical power devices which include an insulated trench containing insulating material and a gate electrode, and related methods. A body region is positioned so that a voltage bias on the gate electrode will cause an inversion layer in the body region. A layer of permanent charge, at or near the sidewall of the trench, provides charge balancing for the space charge in the depleted semiconductor material during the OFF state. A conductive shield layer is positioned below the gate electrode in the insulating material, and reduces capacitive coupling between the gate and the lower part of the trench. This reduces switching losses. In other embodiments, a planar gate electrode controls horizontal carrier injection into the vertical conduction pathway along the trench, while a shield plate lies over the trench itself to reduce capacitive coupling.

摘要翻译： 垂直功率器件，包括绝缘沟槽，包含绝缘材料和栅电极，以及相关方法。 定位体区域，使得栅电极上的电压偏置将在体区域中引起反转层。 在沟槽的侧壁处或其附近的永久电荷层在关闭状态期间为耗尽的半导体材料中的空间电荷提供电荷平衡。 导电屏蔽层位于绝缘材料中的栅电极下方，并且减小栅极与沟槽下部之间的电容耦合。 这样可以减少开关损耗。 在其他实施例中，平面栅极电极控制沿着沟槽的垂直传导路径的水平载流子注入，而屏蔽板位于沟槽本身上以减小电容耦合。

公开(公告)号：US07633102B2

公开(公告)日：2009-12-15

申请号：US11866072

申请日：2007-10-02

申请人： Jun Zeng

发明人： Jun Zeng

IPC分类号： H01L27/088

CPC分类号： H01L29/7811 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7813

摘要： Merging together the drift regions in a low-power trench MOSFET device via a dopant implant through the bottom of the trench permits use of a very small cell pitch, resulting in a very high channel density and a uniformly doped channel and a consequent significant reduction in the channel resistance. By properly choosing the implant dose and the annealing parameters of the drift region, the channel length of the device can be closely controlled, and the channel doping may be made highly uniform. In comparison with a conventional device, the threshold voltage is reduced, the channel resistance is lowered, and the drift region on-resistance is also lowered. Implementing the merged drift regions requires incorporation of a new edge termination design, so that the PN junction formed by the P epi-layer and the N+ substrate can be terminated at the edge of the die.

摘要翻译： 通过沟槽底部的掺杂剂注入将低功率沟槽MOSFET器件中的漂移区域合并在一起可以使用非常小的单元间距，导致非常高的沟道密度和均匀掺杂的沟道，从而显着降低 渠道阻力。 通过适当选择植入剂量和漂移区域的退火参数，可以严密控制器件的沟道长度，并且可以使沟道掺杂高度均匀。 与常规器件相比，阈值电压降低，沟道电阻降低，并且漂移区导通电阻也降低。 实施合并的漂移区域需要并入新的边缘终端设计，使得由P外延层和N +基底形成的PN结可以在模具的边缘终止。