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    Memory having parity error correction
    17.
    发明申请
    Memory having parity error correction 失效
    具有奇偶校验纠错的存储器

    公开(公告)号：US20060285412A1

    公开(公告)日：2006-12-21

    申请号：US11259318

    申请日：2005-10-26

    申请人： Klaus Hummler

    发明人： Klaus Hummler

    IPC分类号： G11C7/00

    CPC分类号： G11C7/1006 ,  G06F11/106 ,  G11C11/406 ,  G11C11/40615 ,  G11C11/4078 ,  G11C2211/4062

    摘要： A memory includes a sense amplifier segment and a plurality of word lines including a first transfer word line and a second transfer word line complementary to the first transfer word line. The memory includes a plurality of bit lines coupled to the sense amplifier segment and a memory cell located at each cross point of each word line and each bit line. The first transfer word line and the second transfer word line are adapted for simultaneously inverting data bit values stored in memory cells along a failed word line to correct a parity error during self refresh.

    摘要翻译： 存储器包括读出放大器段和包括与第一传送字线互补的第一传送字线和第二传送字线的多个字线。 存储器包括耦合到读出放大器段的多个位线和位于每个字线和每个位线的每个交叉点处的存储器单元。 第一传送字线和第二传输字线适于同时反转沿着故障字线存储在存储器单元中的数据位值，以在自刷新期间校正奇偶校验错误。

    Memory access using multiple activated memory cell rows
    18.
    发明申请
    Memory access using multiple activated memory cell rows 有权
    使用多个激活的内存单元行进行内存访问

    公开(公告)号：US20060133186A1

    公开(公告)日：2006-06-22

    申请号：US11018313

    申请日：2004-12-21

    申请人： Klaus Hummler

    发明人： Klaus Hummler

    IPC分类号： G11C8/00

    CPC分类号： G11C7/1018

    摘要： For one or more disclosed embodiments, a plurality of rows of memory cells in a memory bank are activated, and a column of memory cells in the memory bank is selected to select memory cells common to activated rows and the selected column. At least one of the selected memory cells common to activated rows and the selected column is selectively accessed. The selecting and the selectively accessing are repeated to access memory cells common to activated rows and a plurality of selected columns.

    摘要翻译： 对于一个或多个公开的实施例，存储器组中的多行存储器单元被激活，并且存储器组中的一列存储器单元被选择为选择激活行和所选列的公用存储单元。 选择性地访问激活行和所选列共用的所选存储单元中的至少一个。 重复选择和选择性访问以访问激活行和多个选定列共同的存储单元。

    Repair of semiconductor memory device via external command
    20.
    发明授权
    Repair of semiconductor memory device via external command 有权
    通过外部命令修复半导体存储器件

    公开(公告)号：US07401270B2

    公开(公告)日：2008-07-15

    申请号：US11253728

    申请日：2005-10-20

    申请人： Klaus Hummler

    发明人： Klaus Hummler

    IPC分类号： G11C29/00

    CPC分类号： G11C29/44 ,  G11C29/4401 ,  G11C29/846 ,  G11C2029/0407 ,  G11C2029/0409

    摘要： A semiconductor integrated circuit memory device is repaired by receiving an externally-supplied signal containing failure information that identifies at least row or column of memory cells in the memory device that has a failure. The externally-supplied signal contains failure information derived from error correction or other failure logs. The failure information is stored in the memory device and used for comparison against an incoming memory request. If a match is detected between the failure address information and the incoming memory request, then a redundant row or column is used for the memory access request. The repair feature may be performed during power up of the memory device, or normal operation may interrupted by a repair command that places the memory device in a standby mode for the repair.

    摘要翻译： 通过接收包含故障信息的外部提供的信号来修复半导体集成电路存储器件，所述故障信息至少识别存在故障的存储器件中的存储器单元的行或列。 外部提供的信号包含从纠错或其他故障日志导出的故障信息。 故障信息存储在存储设备中，用于与传入存储器请求进行比较。 如果在故障地址信息和传入存储器请求之间检测到匹配，则冗余行或列用于存储器访问请求。 修复功能可以在存储器件的上电期间执行，或者正常操作可能被将存储器件置于备用模式进行修复的修复命令中断。