公开(公告)号：US20130307047A1

公开(公告)日：2013-11-21

申请号：US13895660

申请日：2013-05-16

Applicant: Kabushiki Kaisha Toshiba

Inventor： Kiwamu SAKUMA ,  Haruka KUSAI ,  Yasuhito YOSHIMIZU ,  Masahiro KIYOTOSHI

IPC: H01L27/115

CPC classification number: H01L27/11551 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11578 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: According to one embodiment, a device includes a first fin structure having first to n-th semiconductor layers (n is a natural number equal to or more than 2) stacked in a first direction perpendicular to a surface of a semiconductor substrate, and extending in a second direction parallel to the surface of the semiconductor substrate, first to n-th memory cells provided on surfaces of the first to n-th semiconductor layers in a third direction perpendicular to the first and second directions respectively, and first to n-th select transistors connected in series to the first to n-th memory cells respectively.

Abstract translation: 根据一个实施例，一种器件包括在垂直于半导体衬底的表面的第一方向上堆叠的第一至第n半导体层（n为等于或大于2的自然数）的第一鳍结构， 平行于所述半导体衬底的表面的第二方向，分别在与所述第一和第二方向垂直的第三方向上分别设置在所述第一至第n半导体层的表面上的第一至第n存储单元，以及第一至第n 选择分别与第一至第n个存储器单元串联连接的晶体管。

公开(公告)号：US20180274102A1

公开(公告)日：2018-09-27

申请号：US15698364

申请日：2017-09-07

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yusuke TANAKA ,  Atsushi HIENO ,  Tsutomu NAKANISHI ,  Yasuhito YOSHIMIZU ,  Akihiko HAPPOYA

IPC: C23C18/18 ,  C23C18/16 ,  C23C18/34 ,  C23C18/40 ,  C23F1/00 ,  C07D251/12 ,  H05K3/18

CPC classification number: C23C18/1893 ,  C07D251/12 ,  C23C18/1603 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1689 ,  C23C18/34 ,  C23C18/36 ,  C23C18/40 ,  C23F1/00 ,  G03F7/0002 ,  H01L21/288 ,  H01L21/76874 ,  H01L21/76885 ,  H05K3/00 ,  H05K3/184

Abstract: A method of forming a metal pattern includes forming a catalyst adsorption layer by bringing a surface of a substrate into contact with a solution, the substrate having a base region and a plurality of protrusions provided on the base region, the base region includes a first material, the protrusions includes a second material different from the first material, the first and the second material being exposed on the surface, and the solution containing a compound having a triazine skeleton, a first functional group of any one of a silanol group and an alkoxysilyl group, and a second functional group of at least one selected from the group consisting of an amino group, a thiol group, and an azido group, forming a catalyst layer on the catalyst adsorption layer, forming a metal film on the catalyst layer by an electroless plating method, and removing the metal film on the protrusions.

公开(公告)号：US20170301687A1

公开(公告)日：2017-10-19

申请号：US15258559

申请日：2016-09-07

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Atsushi TAKAHASHI ,  Yasuhito YOSHIMIZU

IPC: H01L27/115 ,  H01L23/528

CPC classification number: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575

Abstract: According to one embodiment, columnar portions extend through an insulating layer and through a stacked body under the insulating layer. The columnar portions are of an insulating material different from the insulating layer. Contact portions include a first contact portion disposed inside a first terrace portion and a second contact portion disposed inside a second terrace portion. The columnar portions including a first columnar portion disposed inside the first terrace portion and a second columnar portion disposed inside the second terrace portion. A shortest distance between the first contact portion and the first columnar portion, and a shortest distance between the second contact portion and the second columnar portion are substantially equal to each other.

公开(公告)号：US20130249062A1

公开(公告)日：2013-09-26

申请号：US13787269

申请日：2013-03-06

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yasuhito YOSHIMIZU ,  Hisashi OKUCHI ,  Hiroshi TOMITA

IPC: H01L21/02 ,  H01L23/24

CPC classification number: H01L21/02304 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76837 ,  H01L23/24 ,  H01L27/11568 ,  H01L29/66833 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming an embedded film comprises depositing a first layer on a second layer that is disposed on a substrate and includes a material different from materials included in the first layer, forming an aperture through the first layer and into the second layer, the aperture having a side surface that includes an exposed portion of the first layer and an exposed portion of the second layer, bringing a material that includes organic molecules into contact with the exposed portion of the first layer and the exposed portion of the second layer to form a monomolecular film that covers the side surface, and forming the embedded film in the aperture with a material having a high enough affinity to the monomolecular film to substantially fill the aperture.

Abstract translation: 形成嵌入膜的方法包括在布置在基底上的第二层上沉积第一层，并且包括与包含在第一层中的材料不同的材料，形成穿过第一层并进入第二层的孔，孔 具有包括所述第一层的暴露部分和所述第二层的暴露部分的侧表面，使包含有机分子的材料与所述第一层的暴露部分和所述第二层的暴露部分接触形成 覆盖侧表面的单分子膜，并且用具有与单分子膜足够高的亲和力的材料在孔中形成嵌入膜以基本上填充孔。