公开(公告)号：US20230090044A1

公开(公告)日：2023-03-23

申请号：US17687407

申请日：2022-03-04

Applicant: Kioxia Corporation

Inventor： Tomoki ISHIMARU ,  Shinji MORI ,  Kazuhiro MATSUO ,  Keiichi SAWA ,  Kenichiro TORATANI

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/66

Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, a first oxide semiconductor layer between the first electrode and the second electrode, the first oxide semiconductor layer containing in, Zn, and a first metal element, and the first metal element being at least one metal of Ga, Mg, or Mn, a second oxide semiconductor layer between the first oxide semiconductor layer and the second electrode, the second oxide semiconductor layer containing In, Zn, and the first metal element, a third oxide semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, the third oxide semiconductor layer containing in, Zn, and a second metal element, the second metal element being at least one metal of Al, Hf, La, Sn, Ta, Ti, W, Y, or Zr, a gate electrode facing the third oxide semiconductor layer, and a gate insulating.

公开(公告)号：US20220246640A1

公开(公告)日：2022-08-04

申请号：US17659881

申请日：2022-04-20

Applicant: KIOXIA CORPORATION

Inventor： Keiichi SAWA ,  Kazuhiro MATSUO ,  Kazuhisa MATSUDA ,  Hiroyuki YAMASHITA ,  Yuta SAITO ,  Shinji MORI ,  Masayuki TANAKA ,  Kenichiro TORATANI ,  Atsushi TAKAHASHI ,  Shouji HONDA

IPC: H01L27/11582 ,  H01L27/11578 ,  H01L27/11519

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

公开(公告)号：US20230328957A1

公开(公告)日：2023-10-12

申请号：US17929422

申请日：2022-09-02

Applicant: Kioxia Corporation

Inventor： Masaya TODA ,  Tomoki ISHIMARU ,  Ha HOANG ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Takafumi OCHIAI ,  Shoji HONDA ,  Kenichiro TORATANI ,  Kiwamu SAKUMA ,  Taro SHIOKAWA ,  Mutsumi OKAJIMA

IPC: H01L27/108

CPC classification number: H01L27/10805

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, spaced from the first electrode, and containing nitrogen (N). In addition, a first distance between the first electrode and the gate insulating layer in a first direction from the first electrode to the second electrode is smaller than a second distance between the first electrode and the gate electrode in the first direction.

公开(公告)号：US20230309301A1

公开(公告)日：2023-09-28

申请号：US17844585

申请日：2022-06-20

Applicant: Kioxia Corporation

Inventor： Yuta KAMIYA ,  Kenichiro TORATANI ,  Kazuhiro MATSUO ,  Shoji HONDA ,  Takuya HIROHASHI ,  Borong CHEN ,  Kota TAKAHASHI

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film including oxygen. The method further includes forming a second film including nitrogen. The method further includes etching surfaces of the first film and the second film using a substance including a halogen. The method further includes forming a third film including nitrogen on the surfaces of the first film and the second film. The third film is formed by alternately performing first processes and second processes, wherein each of the first processes forms a portion of the third film, and each of the second processes etches a portion of the third film using a substance including a halogen.

公开(公告)号：US20220310640A1

公开(公告)日：2022-09-29

申请号：US17460967

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Natsuki FUKUDA ,  Ryota NARASAKI ,  Takashi KURUSU ,  Yuta KAMIYA ,  Kazuhiro MATSUO ,  Shinji MORI ,  Shoji HONDA ,  Takafumi OCHIAI ,  Hiroyuki YAMASHITA ,  Junichi KANEYAMA ,  Ha HOANG ,  Yuta SAITO ,  Kota TAKAHASHI ,  Tomoki ISHIMARU ,  Kenichiro TORATANI

IPC: H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11582

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.

公开(公告)号：US20220262954A1

公开(公告)日：2022-08-18

申请号：US17734960

申请日：2022-05-02

Applicant: Kioxia Corporation

Inventor： Tomoki ISHIMARU ,  Shinji MORI ,  Kazuhiro MATSUO ,  Keiichi SAWA ,  Akifumi GAWASE

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/267 ,  H01L29/08 ,  H01L29/417 ,  H01L29/40

Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, a first metallic region provided between the first electrode and the second electrode and includes at least one metallic element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), magnesium (Mg), manganese (Mn), titanium (Ti), tungsten (W), molybdenum (Mo), and tin (Sn), a second metallic region provided between the first metallic region and the second electrode and includes the at least one metallic element, a semiconductor region provided between the first metallic region and the second metallic region and includes the at least one metallic element and oxygen (O), an insulating region provided between the first metallic region and the second metallic region and is surrounded by the semiconductor region, a gate electrode surrounding the semiconductor region, and a gate insulating layer provided between the semiconductor region and the gate electrode.

公开(公告)号：US20250107069A1

公开(公告)日：2025-03-27

申请号：US18884101

申请日：2024-09-12

Applicant: Kioxia Corporation

Inventor： Takeru MAEDA ,  Sakuya KANEKO ,  Kenichiro TORATANI ,  Takafumi OCHIAI ,  Kazuhiro MATSUO ,  Masaya TODA ,  Ha HOANG ,  Kotaro NODA

IPC: H10B12/00 ,  H01L29/786

Abstract: According to one embodiment a semiconductor device includes an oxide semiconductor column that extends in a first direction. A first electrode contacts a first end of the oxide semiconductor column and a second electrode contacts a second end. A gate electrode surrounds a portion of the oxide semiconductor column. A first insulating film is between the gate electrode and the oxide semiconductor column. A second insulating film is between the gate electrode and the first electrode in the first direction and surrounds the oxide semiconductor column via the first insulating film. A region in which at least a part of the oxide semiconductor column is accommodated is formed by the gate electrode and the second insulating film, and the region has a stepped surface facing towards the second electrode.

公开(公告)号：US20250105023A1

公开(公告)日：2025-03-27

申请号：US18817372

申请日：2024-08-28

Applicant: Kioxia Corporation

Inventor： Shunichi YONEDA ,  Kazuhiro MATSUO ,  Masaya TODA ,  Kota TAKAHASHI ,  Masaya NAKATA ,  Kenichiro TORATANI ,  Ha HOANG ,  Takuma DOI ,  Wakako MORIYAMA

IPC: H01L21/46 ,  C23C8/12

Abstract: A manufacturing method includes loading a substrate into a chamber, the substrate including oxide semiconductor; configuring a temperature in the chamber to a first temperature; supplying an oxidizing gas into the chamber; lowering the temperature in the chamber from the first temperature; stopping supplying the oxidizing gas into the chamber after lowering the temperature; and unloading the substrate from the chamber after the temperature in the chamber reaches a second temperature lower than the first temperature.

公开(公告)号：US20240324179A1

公开(公告)日：2024-09-26

申请号：US18599234

申请日：2024-03-08

Applicant: Kioxia Corporation

Inventor： Yusuke MUTO ,  Masaya TODA ,  Yuta SAITO ,  Kazuhiro KATONO ,  Akifumi GAWASE ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Masaya NAKATA ,  Takuma DOI ,  Kenichiro TORATANI

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: The semiconductor device includes a substrate, an oxide semiconductor layer spaced from the substrate in a first direction intersecting with a surface of the substrate, a first wiring opposed to a part of the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the first wiring, a second wiring electrically connected to one end in the first direction of the oxide semiconductor layer, and a first insulating layer disposed on a surface on one side and a surface on the other side in a second direction intersecting with the first direction of the second wiring. The second wiring contains a first metallic element, and the first insulating layer contains the first metallic element and oxygen (O).

公开(公告)号：US20230340667A1

公开(公告)日：2023-10-26

申请号：US18148322

申请日：2022-12-29

Applicant: Kioxia Corporation

Inventor： Tomoki ISHIMARU ,  Masaya TODA ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Kazuhiro MATSUO

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C23C16/40

CPC classification number: C23C16/45548 ,  C23C16/45565 ,  C23C16/4412 ,  C23C16/52 ,  C23C16/45527 ,  C23C16/407 ,  H01L21/02565

Abstract: A film forming apparatus of embodiments includes: a chamber including a sidewall; a shower head provided in an upper part of the chamber; a holder provided in the chamber holding a substrate; a first gas supply pipe supplying a first gas to the shower head; a first valve provided in the first gas supply pipe; at least one gas supply portion provided in a region of the chamber other than the shower head; a second gas supply pipe supplying a second gas to the at least one gas supply portion; a second valve provided in the second gas supply pipe; a gas exhaust pipe exhausting a gas from the chamber; and an exhaust device connected to the gas exhaust pipe.