公开(公告)号：US20220285170A1

公开(公告)日：2022-09-08

申请号：US17346921

申请日：2021-06-14

Applicant: Kioxia Corporation

Inventor： Junichi HASHIMOTO ,  Toshiyuki SASAKI

IPC: H01L21/425 ,  H01J37/08 ,  H01J37/32

Abstract: A method of manufacturing a semiconductor device includes: preparing a stacked body in which a first layer, a second layer, a third layer, and a fourth layer are stacked in this order on a semiconductor substrate in a first direction, the stacked body including a first region and a second region different from the first region; etching the fourth layer in the first region and the second region to expose the third layer by irradiating the first region and the second region with an ion beam, and etching the third layer and the second layer in the second region to expose the first layer by irradiating the second regions with an ion beam in a state where the third layer is exposed in the first region.

公开(公告)号：US20210237293A1

公开(公告)日：2021-08-05

申请号：US17236517

申请日：2021-04-21

Applicant: Kioxia Corporation

Inventor： Toshiyuki SASAKI

IPC: B26B29/02 ,  H01L27/11582 ,  H01L27/11578 ,  H01L29/792 ,  G11C16/10 ,  H01L23/528 ,  H01L23/532 ,  H01L27/1157 ,  H01L21/311 ,  A45F5/02 ,  B24B3/54

Abstract: According to one embodiment, the stacked body includes a plurality of stacked units and a first intermediate layer. Each of the stacked units includes a plurality of electrode layers and a plurality of insulating layers. Each of the insulating layers is provided between the electrode layers. The first intermediate layer is provided between the stacked units. The first intermediate layer is made of a material different from the electrode layers and the insulating layers. The plurality of columnar portions includes a channel body extending in a stacking direction of the stacked body to pierce the stacked body, and a charge storage film provided between the channel body and the electrode layers.

公开(公告)号：US20210193475A1

公开(公告)日：2021-06-24

申请号：US17197544

申请日：2021-03-10

Applicant: Kioxia Corporation ,  KANTO DENKA KOGYO CO., LTD.

Inventor： Takaya ISHINO ,  Toshiyuki SASAKI ,  Mitsuharu SHIMODA ,  Hisashi SHIMIZU

IPC: H01L21/3065 ,  H01L21/3213

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

公开(公告)号：US20210066090A1

公开(公告)日：2021-03-04

申请号：US16806622

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Junichi HASHIMOTO ,  Kaori NARUMIYA ,  Kosuke HORIBE ,  Soichi YAMAZAKI ,  Kei WATANABE ,  Yusuke KONDO ,  Mitsuhiro OMURA ,  Takehiro KONDOH ,  Yuya MATSUBARA ,  Junya FUJITA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.