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11.发明申请METHODS AND APPARATUS FOR MEASURING SEMICONDUCTOR DEVICE OVERLAY USING X-RAY METROLOGY 有权使用X射线测量法测量半导体器件叠加的方法和装置公开(公告)号：US20150117610A1
公开(公告)日：2015-04-30
申请号：US14521966
申请日：2014-10-23
IPC分类号： G03F7/20 , G01N23/201 , G01N21/95 , G01N23/203
CPC分类号： G03F7/70633 , G01N21/9501 , H01L22/12
摘要： Disclosed are apparatus and methods for determining overlay error in a semiconductor target. For illumination x-rays having at least one angle of incidence (AOI), a correlation model is obtained, and the correlation model correlates overlay error of a target with a modulation intensity parameter for each of one or more diffraction orders (or a continuous diffraction intensity distribution) for x-rays scattered from the target in response to the illumination x-rays. A first target is illuminated with illumination x-rays having the at least one AOI and x-rays that are scattered from the first target in response to the illumination x-rays are collected. An overlay error of the first target is determined based on the modulation intensity parameter of the x-rays collected from the first target for each of the one or more diffraction orders (or the continuous diffraction intensity distribution) and the correlation model.
摘要翻译： 公开了用于确定半导体目标中的重叠误差的装置和方法。 对于具有至少一个入射角（AOI）的照明x射线，获得相关模型，并且相关模型将目标的重叠误差与一个或多个衍射级（或连续衍射中的每一个）的调制强度参数相关联 强度分布），用于响应于照射x射线从目标散射的X射线。 利用具有至少一个AOI的照明x射线照射第一个目标，并且响应于照射x射线而从第一个目标物体散射的X射线被照射。 基于对于一个或多个衍射级（或连续衍射强度分布）和相关模型中的每一个而从第一目标收集的x射线的调制强度参数来确定第一目标的覆盖误差。
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公开(公告)号：US20150110249A1
公开(公告)日：2015-04-23
申请号：US14515322
申请日：2014-10-15
IPC分类号： G01N23/201 , G01N33/00
CPC分类号： G01N23/201 , G01N2033/0095
摘要： Disclosed are apparatus and methods for performing small angle x-ray scattering metrology. This system includes an x-ray source for generating x-rays and illumination optics for collecting and reflecting or refracting a portion of the generated x-rays towards a particular focus point on a semiconductor sample in the form of a plurality of incident beams at a plurality of different angles of incidence (AOIs). The system further includes a sensor for collecting output x-ray beams that are scattered from the sample in response to the incident beams on the sample at the different AOIs and a controller configured for controlling operation of the x-ray source and illumination optics and receiving the output x-rays beams and generating an image from such output x-rays.
摘要翻译： 公开了用于执行小角度X射线散射测量的装置和方法。 该系统包括用于产生X射线的X射线源和照明光学器件，用于收集并折射所产生的X射线的一部分朝着半导体样本上的特定聚焦点以多个入射光束的形式反射或折射 多个不同的入射角（AOI）。 该系统还包括传感器，用于响应于在不同AOI处的样品上的入射光束而从样品收集输出的X射线束，以及控制器，被配置为控制X射线源和照明光学器件的接收和接收 输出x射线束并从这样的输出x射线产生图像。
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13.发明申请公开(公告)号：US20140019097A1
公开(公告)日：2014-01-16
申请号：US13935275
申请日：2013-07-03
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F1/70 , G03F7/70608 , G03F7/70625
摘要： Structural parameters of a specimen are determined by fitting models of the response of the specimen to measurements collected by different measurement techniques in a combined analysis. Models of the response of the specimen to at least two different measurement technologies share at least one common geometric parameter. In some embodiments, a model building and analysis engine performs x-ray and optical analyses wherein at least one common parameter is coupled during the analysis. The fitting of the response models to measured data can be done sequentially, in parallel, or by a combination of sequential and parallel analyses. In a further aspect, the structure of the response models is altered based on the quality of the fit between the models and the corresponding measurement data. For example, a geometric model of the specimen is restructured based on the fit between the response models and corresponding measurement data.
摘要翻译： 样本的结构参数是通过将样本的响应拟合到通过不同测量技术在综合分析中收集的测量结果来确定的。 样本对至少两种不同测量技术的响应模型共享至少一个常见的几何参数。 在一些实施例中，模型构建和分析引擎执行x射线和光学分析，其中在分析期间耦合至少一个公共参数。 响应模型对测量数据的拟合可以顺序，并行或顺序和并行分析的组合进行。 在另一方面，响应模型的结构基于模型与相应测量数据之间的拟合质量而改变。 例如，基于响应模型和对应的测量数据之间的拟合来重组样本的几何模型。
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公开(公告)号：US20130169966A1
公开(公告)日：2013-07-04
申请号：US13648768
申请日：2012-10-10
发明人： Andrei V. Shchegrov , Lawrence D. Rotter , David Y. Wang , Andrei Veldman , Kevin Peterlinz , Gregory Brady , Derrick Shaughnessy
CPC分类号： G01N21/211 , G01B11/0616 , G01N21/4738 , G01N21/55 , G01N2021/213 , G03F7/70608 , G03F7/70625 , G03F7/70633
摘要： The present invention may include a modulatable illumination source configured to illuminate a surface of a sample disposed on a sample stage, a detector configured to detect illumination emanating from a surface of the sample, illumination optics configured to direct illumination from the modulatable illumination source to the surface of the sample, collection optics configured to direct illumination from the surface of the sample to the detector, and a modulation control system communicatively coupled to the modulatable illumination source, wherein the modulation control system is configured to modulate a drive current of the modulatable illumination source at a selected modulation frequency suitable for generating illumination having a selected coherence feature length. In addition, the present invention includes the time-sequential interleaving of outputs of multiple light sources to generate periodic pulses trains for use in multi-wavelength time-sequential optical metrology.
摘要翻译： 本发明可以包括被配置为照亮设置在样品台上的样品的表面的可调节照明源，被配置为检测从样品的表面发出的照明的检测器，被配置为将来自可调节照明源的照明引导到 样品的表面，被配置为将样品的表面的照射引导到检测器的收集光学器件，以及通信地耦合到可调节照明源的调制控制系统，其中调制控制系统被配置为调制可调节照明的驱动电流 源，其以适于产生具有选定的相干特征长度的照明的选定调制频率。 此外，本发明包括多个光源的输出的时间顺序交错以产生用于多波长时间顺序光学测量的周期性脉冲串。
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15.发明授权公开(公告)号：US11562289B2
公开(公告)日：2023-01-24
申请号：US16287523
申请日：2019-02-27
发明人： Song Wu , Yin Xu , Andrei V. Shchegrov , Lie-Quan Lee , Pablo Rovira , Jonathan Madsen
摘要： A metrology system is disclosed. In one embodiment, the metrology system includes a controller communicatively coupled to a reference metrology tool and an optical metrology tool, the controller including one or more processors configured to: generate a geometric model for determining a profile of a test HAR structure from metrology data from a reference metrology tool; generate a material model for determining one or more material parameters of a test HAR structure from metrology data from the optical metrology tool; form a composite model from the geometric model and the material model; measure at least one additional test HAR structure with the optical metrology tool; and determine a profile of the at least one additional test HAR structure based on the composite model and metrology data from the optical metrology tool associated with the at least one HAR test structure.
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公开(公告)号：US10935893B2
公开(公告)日：2021-03-02
申请号：US14453440
申请日：2014-08-06
IPC分类号： G03F7/20 , H01L21/66 , G01N21/956
摘要： Disclosed are apparatus and methods for determining process or structure parameters for semiconductor structures. A plurality of optical signals is acquired from one or more targets located in a plurality of fields on a semiconductor wafer. The fields are associated with different process parameters for fabricating the one or more targets, and the acquired optical signals contain information regarding a parameter of interest (POI) for a top structure and information regarding one or more underlayer parameters for one or more underlayers formed below such top structure. A feature extraction model is generated to extract a plurality of feature signals from such acquired optical signals so that the feature signals contain information for the POI and exclude information for the underlayer parameters. A POI value for each top structure of each field is determined based on the feature signals extracted by the feature extraction model.
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公开(公告)号：US10767978B2
公开(公告)日：2020-09-08
申请号：US15950823
申请日：2018-04-11
IPC分类号： G01N23/201 , G01N23/20 , G01B11/14 , H01L21/66 , G01B11/26 , G03F7/20 , G01N21/47 , H01J37/28 , G01N21/21 , G01B11/06 , H05G2/00 , G01N21/95 , G01B15/00
摘要： Methods and systems for characterizing dimensions and material properties of semiconductor devices by transmission small angle x-ray scatterometry (TSAXS) systems having relatively small tool footprint are described herein. The methods and systems described herein enable Q space resolution adequate for metrology of semiconductor structures with reduced optical path length. In general, the x-ray beam is focused closer to the wafer surface for relatively small targets and closer to the detector for relatively large targets. In some embodiments, a high resolution detector with small point spread function (PSF) is employed to mitigate detector PSF limits on achievable Q resolution. In some embodiments, the detector locates an incident photon with sub-pixel accuracy by determining the centroid of a cloud of electrons stimulated by the photon conversion event. In some embodiments, the detector resolves one or more x-ray photon energies in addition to location of incidence.
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公开(公告)号：US20200243400A1
公开(公告)日：2020-07-30
申请号：US16257066
申请日：2019-01-24
发明人： David Y. Wang , Esen Salcin , Michael Friedmann , Derrick Shaughnessy , Andrei V. Shchegrov , Jonathan M. Madsen , Alexander Kuznetsov
摘要： Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.
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公开(公告)号：US20190271542A1
公开(公告)日：2019-09-05
申请号：US16057498
申请日：2018-08-07
发明人： Andrei V. Shchegrov , Frank Laske , Nadav Gutman
摘要： An overlay metrology system may include a controller to generate optical tool error adjustments for a hybrid overlay target including optically-resolvable features and device-scale features by measuring a difference between an optical overlay measurement based on the optically-resolvable features and a device-scale overlay measurement based on the device-scale features, generate target-to-device adjustments for the hybrid overlay target based on positions of features within the device area, determine device-relevant overlay measurements for one or more locations in the device area based on at least one of the optical overlay measurement, the optical tool error adjustments, or the target-to-device adjustments, and provide overlay correctables for the device area to a lithography tool to modify exposure conditions for at least one subsequent exposure based on the device-relevant overlay measurements.
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公开(公告)号：US20190212281A1
公开(公告)日：2019-07-11
申请号：US16230489
申请日：2018-12-21
IPC分类号： G01N23/223 , G02B27/09 , H05G1/30 , G01N23/083 , G01N23/207
CPC分类号： G01N23/223 , G01N23/083 , G01N23/2076 , G02B27/0977 , H05G1/30
摘要： Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.
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