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    Detection and measurement of dimensions of asymmetric structures
    11.
    发明授权
    Detection and measurement of dimensions of asymmetric structures 有权

    公开(公告)号：US10732515B2

    公开(公告)日：2020-08-04

    申请号：US16138813

    申请日：2018-09-21

    Applicant: KLA-Tencor Corporation

    Inventor： Phillip R. Atkins ,  Qi Dai ,  Liequan Lee

    IPC: G03F7/20 ,  G01B11/06 ,  G01N21/21 ,  G01N21/95

    Abstract: Methods and systems for performing spectroscopic measurements of asymmetric features of semiconductor structures are presented herein. In one aspect, measurements are performed at two or more azimuth angles to ensure sensitivity to an arbitrarily oriented asymmetric feature. Spectra associated with one or more off-diagonal Mueller matrix elements sensitive to asymmetry are integrated over wavelength to determine one or more spectral response metrics. In some embodiments, the integration is performed over one or more wavelength sub-regions selected to increase signal to noise ratio. Values of parameters characterizing an asymmetric feature are determined based on the spectral response metrics and critical dimension parameters measured by traditional spectral matching based techniques.

    Detection And Measurement Of Dimensions Of Asymmetric Structures
    12.
    发明申请
    Detection And Measurement Of Dimensions Of Asymmetric Structures 审中-公开

    公开(公告)号：US20190094711A1

    公开(公告)日：2019-03-28

    申请号：US16138813

    申请日：2018-09-21

    Applicant: KLA-Tencor Corporation

    Inventor： Phillip R. Atkins ,  Qi Dai ,  Liequan Lee

    IPC: G03F7/20 ,  G01B11/06 ,  G01N21/21

    Abstract: Methods and systems for performing spectroscopic measurements of asymmetric features of semiconductor structures are presented herein. In one aspect, measurements are performed at two or more azimuth angles to ensure sensitivity to an arbitrarily oriented asymmetric feature. Spectra associated with one or more off-diagonal Mueller matrix elements sensitive to asymmetry are integrated over wavelength to determine one or more spectral response metrics. In some embodiments, the integration is performed over one or more wavelength sub-regions selected to increase signal to noise ratio. Values of parameters characterizing an asymmetric feature are determined based on the spectral response metrics and critical dimension parameters measured by traditional spectral matching based techniques.

    Adaptive numerical aperture control method and system
    16.
    发明授权
    Adaptive numerical aperture control method and system 有权

    公开(公告)号：US10678226B1

    公开(公告)日：2020-06-09

    申请号：US15214371

    申请日：2016-07-19

    Applicant: KLA-Tencor Corporation

    Inventor： Qiang Wang ,  Liequan Lee ,  Xin Li ,  Qiang Zhao

    IPC: G05B19/418 ,  H01L21/67 ,  H01L21/66 ,  G01B11/00 ,  G01N21/956

    Abstract: Systems and methods for providing efficient modeling and measurement of critical dimensions and/or overlay registrations of wafers are disclosed. Efficiency is improved in both spectral dimension and temporal dimension. In the spectral dimension, efficiency can be improved by allowing different numerical aperture (NA) models to be used for different wavelengths in electromagnetic calculations, effectively providing a balance between computation speed and accuracy. In the temporal dimension, different NA models may be used at different iterations/stages in the process, effectively improving the computation speed without sacrificing the quality of the final result.

    MULTI-MODEL METROLOGY
    19.
    发明申请
    MULTI-MODEL METROLOGY 审中-公开

    公开(公告)号：US20160322267A1

    公开(公告)日：2016-11-03

    申请号：US15204461

    申请日：2016-07-07

    Applicant: KLA-Tencor Corporation

    Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

    IPC: H01L21/66 ,  G06F17/50 ,  G03F7/20 ,  H01L21/67

    CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

    Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

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