Metrology targets and methods with oblique periodic structures

    公开(公告)号:US11137692B2

    公开(公告)日:2021-10-05

    申请号:US16313972

    申请日:2018-11-29

    Abstract: Metrology targets, design methods and measurement methods thereof are provided with periodic structure(s) which are oblique with respect to orthogonal production axes X and Y of the lithography tool—enabling more accurate overlay measurements of devices having diagonal (oblique, tilted) elements such as DRAM devices. One or more oblique periodic structure(s) may be used to provide one- or two-dimensional signals, with respect to one or more layers, possibly providing overlay measurements for multiple steps applied to one layer. The oblique periodic structure(s) may be used to modify current metrology target designs (e.g., imaging targets and/or scatterometry targets) or to design new targets, and measurement algorithms may be adjusted respectively to derive signals from the oblique periodic structure(s) and/or to provide pre-processed images thereof. The disclosed targets are process compatible and reflect more accurately the device overlays with respect to various process steps.

    Reticle Optimization Algorithms and Optimal Target Design

    公开(公告)号:US20180348648A1

    公开(公告)日:2018-12-06

    申请号:US15571427

    申请日:2017-06-06

    Abstract: Metrology target designs on the reticle and on the wafer, and target design and processing methods are provided. Target designs comprise coarse pitched periodic structures having fine pitched sub-elements, which vary in sub-element CD and/or height, an orthogonal periodic structure, perpendicular to the measurement direction, with an orthogonal unresolved pitch among periodically recurring bars, which provide a calibration parameter for achieving well-printed targets. Orthogonal periodic structures may be designed on the reticle and be unresolved, or be applied in cut patterns on the process layer, with relatively low sensitivity to the cut layer overlay. Designed targets may be used for overlay metrology as well as for measuring process parameters such as scanner aberrations and pitch walk.

    Focus metrology and targets which utilize transformations based on aerial images of the targets

    公开(公告)号:US10197922B2

    公开(公告)日:2019-02-05

    申请号:US15302052

    申请日:2016-08-04

    Abstract: Focus metrology methods and modules are provided, which use aerial-images-based transformations to share measurement information derived from multiple targets and/or to design additional targets to specified compliant targets, which enable simple adjustment of focus targets to changing production conditions. Methods comprise positioning two or more focus targets in each wafer field, conducting focus measurements of the targets, transforming the focus measurements into a single set of results for each field, using a transformation between the targets that is based on the aerial images thereof, and deriving focus results from the single sets of results; and possibly designing the focus targets from specified targets using aerial image parameters of the specified targets.

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