公开(公告)号：US20180108823A1

公开(公告)日：2018-04-19

申请号：US15562855

申请日：2016-03-23

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Toni Lopez

IPC: H01L33/64 ,  H01L33/60 ,  H01L33/50

CPC classification number: H01L33/644 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L33/641 ,  H01L33/642

Abstract: A substantial amount of the light emitting surface area of a wavelength conversion element above a light emitting element is covered by a reflective thermal conductive element. The light that is reflected by this reflective element is ‘recycled’ within the light emitting structure and exits the structure through the smaller area that is not covered by the reflective element. Because the thermal conductive element does not need to be transparent, a relatively thick metal layer may be used; and, because the thermal conductive element covers a substantial area of the wavelength conversion element, the thermal efficiency of this arrangement is very high. The reflective thermal conductive element may be coupled to thermal conductive pillars, which may be mounted on a thermal conductive submount.

公开(公告)号：US20180033916A1

公开(公告)日：2018-02-01

申请号：US15730459

申请日：2017-10-11

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Toni Lopez

IPC: H01L33/24 ,  H01L33/22 ,  H01L33/20 ,  H01L33/46 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L33/0062 ,  H01L33/20 ,  H01L33/22 ,  H01L33/46

Abstract: The escape surface of a light emitting element includes features that include sloped surfaces that have angles of inclination that are based on the direction of peak light output from the light emitting element. If the light output exhibits a number of lobes at different directions, the sloped surfaces may have a corresponding number of different angles of inclination. To minimize the re-injection of light into adjacent features, adjacent features may be positioned to avoid having surfaces that directly face each other. The features may be shaped or positioned to provide a pseudo-random distribution of inclined surfaces across the escape surface, and multiple roughening processes may be used.

公开(公告)号：US20170104130A1

公开(公告)日：2017-04-13

申请号：US15314400

申请日：2015-05-18

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Toni Lopez

IPC: H01L33/20 ,  H01L33/24 ,  H01L33/44 ,  H01L33/32

CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44

Abstract: A lighting device according to embodiments of the invention includes a substrate with a plurality of holes that extend from a surface of the substrate. A non-III-nitride material is disposed within the plurality of holes. The surface of the substrate is free of the non-III-nitride material. A semiconductor structure is grown on the surface of the substrate. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region.

公开(公告)号：US09577151B2

公开(公告)日：2017-02-21

申请号：US14786522

申请日：2014-04-10

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Toni Lopez ,  Mark Melvin Butterworth ,  Theodoros Mihopoulos

IPC: H01L33/36 ,  H01L33/38 ,  H01L33/62 ,  H01L33/46 ,  H01L33/50 ,  H01L33/40

CPC classification number: H01L33/62 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405 ,  H01L33/46 ,  H01L33/502 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure.

Abstract translation: 本发明的实施例包括包括设置在n型区域和p型区域之间的发光层的半导体结构。 金属n型触点连接到n型区域。 金属p型接触件与p型区域直接接触。 互连电连接到n触点和p触点之一。 互连配置成与半导体结构相邻。

公开(公告)号：US20160149082A1

公开(公告)日：2016-05-26

申请号：US14900143

申请日：2014-06-12

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Toni Lopez

IPC: H01L33/24 ,  H01L33/22 ,  H01L33/00 ,  H01L33/46

CPC classification number: H01L33/24 ,  H01L33/0062 ,  H01L33/20 ,  H01L33/22 ,  H01L33/46

Abstract: The escape surface of a light emitting element includes features (310) that include sloped surfaces (312, 314) that have angles of inclination that are based on the direction of peak light output from the light emitting element. If the light output exhibits a number of lobes at different directions, the sloped surfaces (312, 314) may have a corresponding number of different angles of inclination (as in FIGS. 3b and 3c). To minimize the re-injection of light into adjacent features, adjacent features may be positioned to avoid having surfaces that directly face each other. The features may be shaped or positioned to provide a pseudo-random distribution of inclined surfaces across the escape surface, and multiple roughening processes may be used.

Abstract translation: 发光元件的逸出表面包括特征（310），其包括倾斜表面（312,314），所述倾斜表面具有基于从发光元件输出的峰值光的方向的倾斜角度。 如果光输出在不同方向上呈现多个凸角，则倾斜表面（312,314）可以具有相应数量的不同倾角（如图3b和3c所示）。 为了最小化将光重新注入到相邻特征中，相邻特征可以被定位以避免具有直接面对彼此的表面。 这些特征可以被成形或定位成提供穿过逸出表面的倾斜表面的伪随机分布，并且可以使用多个粗糙化过程。

公开(公告)号：US10090436B2

公开(公告)日：2018-10-02

申请号：US15108922

申请日：2014-12-12

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Toni Lopez

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/46 ,  H01L25/075 ,  H01L33/48 ,  H01L33/50

Abstract: Embodiments of the invention include a substrate (10) and a semiconductor structure (12) grown on the substrate. The semiconductor structure includes a light emitting layer (18) disposed between an n-type region (16) and a p-type region (20). The substrate includes a first sidewall (30) and a second sidewall (32). The first sidewall and second sidewall are disposed at different angles relative to a major surface of the semiconductor structure. A reflective layer (34) is disposed over the first sidewall (30).

公开(公告)号：US20180254390A1

公开(公告)日：2018-09-06

申请号：US15972480

申请日：2018-05-07

Applicant: Koninklijke Philips N.V.

Inventor： Toni Lopez

IPC: H01L33/58 ,  H01L33/50 ,  H01L33/44

CPC classification number: H01L33/58 ,  H01L33/44 ,  H01L33/507

Abstract: The present invention relates to a light emitting diode component, comprising a light emitting semiconductor structure having a top surface, and a micro-optical multilayer structure arranged to guide light out from said light emitting semiconductor structure, said micro-optical multilayer structure comprising a plurality of layers, wherein an i+1:th layer is arranged on top an i:th layer in a sequence as seen from said semiconductor structure, wherein a refractive index, ni, of the i:th layer is greater than a refractive index, ni+l, of the i+1:th layer, and wherein a thickness of the i+1:th layer is greater than a thickness of the i:th layer. The present invention also relates to a light emitting diode comprising such a light emitting diode component.

公开(公告)号：US09806604B2

公开(公告)日：2017-10-31

申请号：US14907873

申请日：2014-09-03

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Julia Delos Ayllon ,  Toni Lopez ,  Machiel Antonius Martinus Hendrix ,  Eduardo-Jose Alarcon-Cot

IPC: H05B33/08 ,  H02M3/04 ,  H02M3/158 ,  H02M1/00 ,  H02M3/07

CPC classification number: H02M3/04 ,  H02M3/158 ,  H02M2001/0074 ,  H02M2003/072 ,  H05B33/0815

Abstract: The current invention relates to a power conversion device (10), for supplying a load (11) with a PWM signal through an inductive output filter (105). The power conversion device (10) comprises a power conversion module (101) supplied by a DC input voltage (Vin) and is configured for providing a plurality of output signals (PWM1, . . . , PWMn) having a level amplitude that is a fraction of the input voltage (Vin) level. Each output signal is floating with a bias component equally split in a plurality of steps ranging from a determined lowest fraction level amplitude to a determined highest fraction level amplitude. The power conversion device (10) further comprises a multiplexer (103) receiving as a plurality of inputs the plurality of output signals (PWM1, . . . , PWMn). The multiplexer is configured for outputting one output signal (PWMx) selected from the plurality of inputs, whereby the output signal (PWMx) of the multiplexer (103) is connected to the output filter (105).

公开(公告)号：US09577172B2

公开(公告)日：2017-02-21

申请号：US14762826

申请日：2014-01-27

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Toni Lopez

IPC: H01L33/64 ,  H01L33/38 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/647 ,  H01L33/382 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a light emitting die component formed by multilayer structures. The light emitting die component comprises a semiconductor structure (103) comprising: an n-type layer (104), an active region (106) and a p-type layer (108); a p-contact layer (110) arranged to be in electrical contact with said p-type layer (108); an n-contact layer (116) arranged to be in electrical contact with said n-type layer (104); a first dielectric layer (114) arranged to electrically isolate said p-contact layer (110) from said n-contact layer (116); a thermal spreading layer (120) comprising a first and a second region (120a, 120b) being electrically isolated from each other, wherein said first region (120a) forming an anode electrode of said light emitting die component and said second region (120b) forming a cathode electrode of said light emitting die component; a second dielectric layer (118) arranged to electrically isolate said n-contact layer (116) from said first region (120a) or to electrically isolate said p-contact layer (110) from said second region (120b); a third dielectric layer (122) arranged to electrically isolate said first and second regions (120a, 120b); and an interconnect pad (124) enabling interconnection with a submount (126).

Abstract translation: 本发明涉及由多层结构形成的发光模具部件。 发光模具组件包括半导体结构（103），包括：n型层（104），有源区（106）和p型层（108）; 布置成与所述p型层（108）电接触的p接触层（110）; 布置成与所述n型层（104）电接触的n接触层（116）; 布置成将所述p接触层（110）与所述n接触层（116）电隔离的第一介电层（114）; 包括彼此电隔离的第一和第二区域（120a，120b）的热扩散层（120），其中形成所述发光管芯部件的阳极电极和所述第二区域（120b）的所述第一区域（120a） 形成所述发光模具部件的阴极电极; 布置成将所述n接触层（116）与所述第一区域（120a）电隔离或将所述p接触层（110）与所述第二区域（120b）电隔离的第二电介质层（118）。 布置成电隔离所述第一和第二区域（120a，120b）的第三电介质层（122）; 以及能够与子安装件（126）互连的互连焊盘（124）。

公开(公告)号：US20160155901A1

公开(公告)日：2016-06-02

申请号：US14905959

申请日：2014-07-02

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Toni Lopez ,  Kwong-Hin Henry Choy

IPC: H01L33/40 ,  H01L33/46 ,  H01L33/50 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/405 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42 ,  H01L33/46 ,  H01L33/502 ,  H01L2933/0025

Abstract: An LED die (40) includes an N-type layer (18), a P-type layer (22), and an active layer (20) epitaxially grown over a first surface of a transparent growth substrate (46). Light is emitted through a second surface of the substrate opposite the first surface and is wavelength converted by a phosphor layer (30). Openings (42, 44) are etched in the central areas (42) and along the edge (44) of the die to expose the first surface of the substrate (46). A highly reflective metal (50), such as silver, is deposited in the openings and insulated from the metal P-contact. The reflective metal may conduct current for the N-type layer by being electrically connected to an exposed side of the N-type layer along the inside edge of each opening. The reflective metal reflects downward light emitted by the phosphor layer to improve efficiency. The reflective areas provided by the reflective metal may form 10%-50% of the die area.

Abstract translation: LED管芯（40）包括在透明生长衬底（46）的第一表面上外延生长的N型层（18），P型层（22）和有源层（20）。 光通过与第一表面相对的第二表面发射并被荧光体层（30）波长转换。 在中心区域（42）中并且沿着模具的边缘（44）蚀刻开口（42,44）以暴露衬底（46）的第一表面。 诸如银的高反射金属（50）沉积在开口中并与金属P-接触绝缘。 反射金属可以通过沿着每个开口的内边缘电连接到N型层的露出侧来传导N型层的电流。 反射金属反射由磷光体层发射的向下的光以提高效率。 由反射金属提供的反射区域可以形成模具面积的10％-50％。