公开(公告)号：US06579754B2

公开(公告)日：2003-06-17

申请号：US09850224

申请日：2001-05-08

申请人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

发明人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

IPC分类号： H01L218242

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L21/31691

摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of a crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

摘要翻译： 本发明是以制造成品率高的铁电薄膜电容器作为存储电容器的高质量的半导体存储器件，规定了电容器的铁电薄膜，晶体尺寸的相对标准偏差为13％， 从而确保高的剩余极化值和小的薄膜疲劳（大的可重写数量）。

公开(公告)号：US06445025B2

公开(公告)日：2002-09-03

申请号：US09848420

申请日：2001-05-04

申请人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

发明人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

IPC分类号： H01L2976

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L21/31691

摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

公开(公告)号：US06316798B1

公开(公告)日：2001-11-13

申请号：US09331670

申请日：1999-06-23

申请人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

发明人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

IPC分类号： H01L2976

CPC分类号： H01L28/57 ,  H01L27/1203

摘要： A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing one or a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7 /electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of the ferroelectric characteristic, thereby to attain a long life ferroelectric memory device.

摘要翻译： 使用薄铁电薄膜电容器作为记忆电容器的长寿命铁电存储器件通过在铁氧体层7的边界上的上保护电极和上电极8以及劣化防止层上设置一个或多个降解防止层来获得 /电极6,8，或者提供在铁电层7 /上电极8的边界处减小改性层的步骤。这提供了一种薄铁电薄膜电容器，其经受较少的疲劳和压印，并且铁电体的劣化较少 特性，从而获得长寿命的铁电存储器件。

公开(公告)号：US07232716B2

公开(公告)日：2007-06-19

申请号：US10891522

申请日：2004-07-15

申请人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

发明人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

IPC分类号： H01L21/66 ,  H01L21/268

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of an amorphous silicon film formed on a subsequent substrate is measured. A value of energy density of laser beam irradiation for the subsequent amorphous silicon film is calculated on the basis of the two average film thicknesses. Accordingly, a uniform polysilicon film of large grain sizes is formed on the whole surface of a large-size substrate to provide polysilicon TFTs in a large area.

摘要翻译： 测量在基板上形成的非晶硅膜的平均膜厚。 然后，用激光束照射非晶硅膜以形成多晶硅膜，并测量多晶硅膜的晶粒尺寸分布。 基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。 然后，测量形成在随后的基板上的非晶硅膜的平均膜厚。 基于两个平均膜厚度计算随后的非晶硅膜的激光束照射的能量密度值。 因此，在大尺寸基板的整个表面上形成均匀的大晶粒尺寸的多晶硅膜，以提供大面积的多晶硅TFT。

公开(公告)号：US06995058B2

公开(公告)日：2006-02-07

申请号：US10183669

申请日：2002-06-28

申请人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

发明人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

IPC分类号： H01L21/8242

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L21/31691

摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

公开(公告)号：US06906365B2

公开(公告)日：2005-06-14

申请号：US09984609

申请日：2001-10-30

申请人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

发明人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

IPC分类号： H01L21/8247 ,  H01L21/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/12 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L28/57 ,  H01L27/1203

摘要： A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7/electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of ferroelectric characteristic to attain a long life ferroelectric memory device.

摘要翻译： 通过在铁电层7 /电极的边界上的上保护电极和上电极8以及劣化防止层上设置多个防腐层，可获得使用薄铁电薄膜电容器作为记忆电容器的长寿命铁电存储器件 或者提供在铁电层7 /上电极8的边界处减少改性层的步骤。 这提供了一种薄的铁电薄膜电容器，其经受较少的疲劳和压印，并且其铁电特性的降低较少以获得长寿命的铁电存储器件。

公开(公告)号：US06239457B1

公开(公告)日：2001-05-29

申请号：US09288672

申请日：1999-04-09

申请人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

发明人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

IPC分类号： H01L2976

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L21/31691

摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

摘要翻译： 本发明是以制造成品率高的铁电薄膜电容器作为存储电容器的高品质半导体存储器件，规定了电容器的铁电薄膜，使得晶粒尺寸的相对标准偏差为13％以下 ，从而确保高剩余极化值和小的薄膜疲劳（大的可重写数量）。

公开(公告)号：US06623986B2

公开(公告)日：2003-09-23

申请号：US09984465

申请日：2001-10-30

申请人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

发明人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

IPC分类号： H01L2100

CPC分类号： H01L28/57 ,  H01L27/1203

摘要： Along life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7/electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of ferroelectric characteristic to attain a long life ferroelectric memory device.

摘要翻译： 通过在铁氧体层7 /电极6的边界上的上保护电极和上电极8以及降解防止层上设置多个防结层，可以获得使用薄铁电体膜电容器作为记忆电容器的寿命铁电存储器件 或者提供在铁电层7 /上电极8的边界处减少改性层的步骤。这提供了一种薄铁电薄膜电容器，其经受较少的疲劳和压印，并且具有较低的铁电特性降低以达到 长寿命铁电存储器件。

公开(公告)号：US06670638B2

公开(公告)日：2003-12-30

申请号：US09793972

申请日：2001-02-28

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Hironaru Yamaguchi ,  Yoshinobu Kimura ,  Makoto Ohkura ,  Hironobu Abe ,  Shigeo Shimomura ,  Masakazu Saitou ,  Michiko Takahashi

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Hironaru Yamaguchi ,  Yoshinobu Kimura ,  Makoto Ohkura ,  Hironobu Abe ,  Shigeo Shimomura ,  Masakazu Saitou ,  Michiko Takahashi

IPC分类号： H01L2904

CPC分类号： H01L29/66757 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L29/78675

摘要： Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersing in an H2O2 solution to newly form an extremely thin oxide layer, prior to a crystallizing processing performed by a laser beam irradiation. The crystallizing processing forms a polysilicon film formed of crystal grains Preferentially oriented on the (111) plane in a direction parallel to the substrate surface, an average crystal grain size being not larger than 300 nm, the standard deviation of the grain sizes being not larger than 30% of the average grain size, and the standard deviation of the roughness being not larger than 10% of the average grain size.

摘要翻译： 公开了适用于液晶显示器的多晶硅膜及其制造方法。 在制造膜时，通过氢氟酸溶液将形成在非晶硅膜表面上的天然氧化物层完全除去，随后在H 2 O 2溶液中浸渍以形成极薄的氧化物层，然后在结晶处理之前进行 激光束照射。 结晶处理形成由晶粒形成的多晶硅膜，在（111）面上沿着平行于基板表面的方向优先取向，平均晶粒尺寸不大于300nm，晶粒尺寸的标准偏差不大 超过平均粒径的30％，粗糙度的标准偏差不大于平均粒径的10％。

公开(公告)号：US6031694A

公开(公告)日：2000-02-29

申请号：US394759

申请日：1995-02-27

申请人： Takuo Tamura ,  Asao Nakano ,  Kazufumi Suenaga ,  Kiyoshi Ogata ,  Souzou Sasajima ,  Noriyuki Kumasaka

发明人： Takuo Tamura ,  Asao Nakano ,  Kazufumi Suenaga ,  Kiyoshi Ogata ,  Souzou Sasajima ,  Noriyuki Kumasaka

IPC分类号： C01B33/20 ,  C01F7/16 ,  C23C14/08 ,  C23C30/00 ,  G11B5/255 ,  G11B5/31 ,  G11B5/53 ,  G11B15/61 ,  G11B5/187

CPC分类号： C01F7/162 ,  C01B33/20 ,  C01F7/16 ,  C23C14/08 ,  C23C30/00 ,  G11B15/61 ,  G11B5/255 ,  G11B5/3106 ,  G11B5/53 ,  C01P2002/02 ,  C01P2002/70

摘要： A protective film which is close to a substrate of a magnetic head in term of thermal expansion coefficient and hardness when it is placed on a slide face of the magnetic head, and moreover is made of material which is high stability in water and enables the film to be formed at high speed. The protective film contains a region of composition CaMgSi.sub.2 O.sub.6 at least in a part thereof. Ca atom is surrounded by O atoms with the coordination number of eight, Mg is surrounded by O atoms with the coordination number of six, and Si is surrounded by O atoms with the coordination number of four in the atomic configuration in the region.

摘要翻译： 一种保护膜，当其放置在磁头的滑动面上时，其热膨胀系数和硬度接近于磁头的基板，此外由在水中稳定性高的材料制成，并使膜 以高速形成。 保护膜至少部分地含有CaMgSi 2 O 6组成的区域。 Ca原子被配位数为8的O原子包围，Mg被配位数为6的O原子包围，Si在该区域的原子构型中由配位数为4的O原子包围。