摘要:
The invention relates to a television receiving tuner for receiving television signals of VHF band/UHF band, a CATV signal, and a satellite television broadcasting signal. As a circuit for receiving the television signals of the VHF band/UHF band and the CATV signal as a first input signal, there is provided a double super type tuner of the up/down converter system including a first local oscillator (6) and a first mixer (5) which construct an up converter and a second local oscillator (10) and a second mixer (9) which construct a down converter. When the satellite television broadcasting signal as a second input signal is received, the first local oscillator (6) and the first mixer (5) in the up converter section are switched by switching circuits (12, 13) and used as a down converter. At least the first local oscillator (6) and the first mixer (5) are commonly used both for reception of the television signals of the VHF band/UHF band and the CATV signal and for reception of the satellite television broadcasting signal, thereby accomplishing the simplification of the construction and the low costs.
摘要:
A tuner station apparatus includes a first mixer for combining an input signal and a first local oscillation signal, and a second mixer for combining an output of the first mixer and a second local oscillation signal. The first and second local oscillation signals are generated by first and second PLL circuits, respectively. Each of the first and second PLL circuits include a frequency divider, a variable frequency divider, a phase comparator, a low pass filter, and a voltage controlled oscillator. The frequency divider of the first PLL circuit has a higher frequency division ratio than that of the second PLL circuit.
摘要:
A high frequency amplifier circuit based on an amplifying transistor, e.g. a dual-gate FET, having an A.G.C. voltage applied to a control terminal thereof to control the transistor DC operating current, has a diode connected between an input electrode of the transistor and a source of an input high frequency signal. All or part of the DC operating current of the transistor is passed through the diode as the operating current of the diode to thereby produce a high degree of attenuation by the diode when the transistor current level is small, so that reduced cross modulation interference is produced by the transistor when a high degree of gain reduction is executed by A.G.C. control.
摘要:
A structure of a substrate used for growing a crystal layer of a semiconductor, particularly a group-III nitride semiconductor and its manufacturing method. The substrate comprises two porous layers on a base. The mean opening diameter of the pores of the first porous laser, the outermost layer, is smaller than the means diameter of the pores in the second porous layer nearer to the base than the first porous layer. The first and second porous layers have volume porosities of 10 to 90%. More then 50% of the pores of the first porous layer extend from the surface of the first porous layer and reach the interface between the first and second porous layers. Even by a conventional crystal growing method, an epitaxial crystal of low defect density can be easily grown on the porous substrate.
摘要:
An audio characteristic correction system adapted to an audio surround system in which a sound emitted from a directional speaker (an array speaker) is reflected on a wall surface or a sound reflection board so as to create a virtual speaker, at least one of frequency-gain characteristics, frequency-phase characteristics, and gain of an audio signal input to the directional speaker is corrected such that the sound reflected on the wall surface or the sound reflection board has desired audio characteristics at a desired listening position.
摘要:
In an array speaker system that performs multi-channel reproduction using an array speaker constituted by arraying a plurality of speaker units in a matrix manner, a left channel signal, a right channel signal, and a center channel signal, all of which instruct reproduction of sound at a front side of a listener, are subjected to weighting using weight coefficients based on a Bessel function so as to drive the speaker units, thus realizing spherical sound emission characteristics. In addition, a surround left channel signal and a surround right channel signal, both of which instruct reproduction of sound at a rear side of the listener, are subjected to beam processing, whereby sound is reflected on a sound reflection position such as a wall surface or a ceiling and is then emitted in the form of a sound beam reaching the rear side of the listener.
摘要:
An array speaker system is constituted by a plurality of speaker units, which are equipped with weighting means respectively and to which weight coefficients based on a Bessel function are imparted. An input signal is transmitted through an all-pass filter whose phase rotates by 180° in high-frequency ranges and is then supplied to those of the speaker units whose weight coefficients have negative values. Thus, a signal of an inverse phase is output with respect to low-frequency ranges; hence, it is possible to avoid the deterioration of audio emission characteristics, and it is possible to avoid the occurrence of beams and comb shapes in audio emission characteristics with respect to signals of high-frequency ranges.
摘要:
In an optical recording apparatus having an optical pickup, a rotating section is provided for rotating an optical disk which is formed thereon with a guide groove to define a spiral track having a plurality of rounds. The optical pickup has a light source for generating an optical beam and a diffractive grating for diffracting the optical beam to form a main beam and a pair of sub beams opposite with each other relative to the main beam. The optical pickup is operable for irradiating the main beam to the spiral track with accompanying the pair of the sub beams along apposite sides of the spiral track. A servo section operates the optical pickup to enable the main beam to trace the spiral track based on a tracking error signal derived from return lights of the sub beams reflected back from the optical disk. A recording section modulates the main beam for recording of information onto the spiral track while the optical dick is rotated. A control section controls recording of information each cycle the optical disk is rotated such that the recording of information is enabled to fill one round of the spiral track and disabled to blank another round of the spiral track so as to alternate the filled rounds and the blanked rounds.
摘要:
An optical disk recording apparatus operates on an optical disk having circular tracks which are provisionally written with an index signal used for securing a constant linear velocity of the optical disk from an innermost circular track to an outermost circular track, and records data along the circular tracks at different linear densities on different annular zones of the optical disk. In the apparatus, a disk drive section rotates the optical disk while synchronizing the index signal successively read from the rotated optical disk with a predetermined reference clock signal to thereby maintain the constant linear velocity of the circular tracks. A clock generating section multiples or divides the reference clock signal by different rates to generate different writing clock signals in correspondence to the different annular zones of the optical disk. A data recording section operates in synchronization to the different writing clock signals for recording data along the circular tracks at the different linear densities on the different annular zones.
摘要:
A compound semiconductor substrate is manufactured by forming a higher-quality compound semiconductor layer having a smaller number of crystalline defects on a single-crystal substrate, and removing the single-crystal substrate without causing damage to the compound semiconductor layer. The method comprises the steps of forming the compound semiconductor layer (first, second and third compound semiconductor layers) on the single-crystal substrate (sapphire substrate) through crystal growth so as to partially have a space between the compound semiconductor layer and the single-crystal substrate; and removing the compound semiconductor layer from the sapphire substrate by irradiating the compound semiconductor layer from a side of the sapphire substrate with a laser beam passing through the single-crystal substrate and being absorbed in the compound semiconductor layer to melt an interface between the single-crystal substrate and the compound semiconductor.