公开(公告)号：US5926240A

公开(公告)日：1999-07-20

申请号：US787050

申请日：1997-01-28

申请人： Shoichi Hirota ,  Hideo Sato ,  Iwao Takemoto ,  Toshio Saito

发明人： Shoichi Hirota ,  Hideo Sato ,  Iwao Takemoto ,  Toshio Saito

IPC分类号： G02B5/02 ,  G02F1/13 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362 ,  G03B33/12

CPC分类号： G02F1/133553 ,  G02F1/136277 ,  G02F1/133502 ,  G02F2001/133397 ,  G02F2001/133565

摘要： The liquid crystal display apparatus has a pair of substrates. One of the paired substrates includes active matrix elements and reflective pixel electrodes. The other substrate includes a transparent electrode. A liquid crystal layer is provided between the paired substrates, with a single-layer dielectric film disposed between the reflective pixel electrodes and the liquid crystal layer.

摘要翻译： 液晶显示装置具有一对基板。 配对基板之一包括有源矩阵元件和反射像素电极。 另一基板包括透明电极。 在一对基板之间设置液晶层，其中单层电介质膜设置在反射像素电极和液晶层之间。

公开(公告)号：US5174820A

公开(公告)日：1992-12-29

申请号：US832654

申请日：1992-02-11

申请人： Masaharu Sakuta ,  Toshio Saito ,  Kunio Yanagibashi

发明人： Masaharu Sakuta ,  Toshio Saito ,  Kunio Yanagibashi

IPC分类号： C04B24/02 ,  C04B24/32

CPC分类号： C04B24/32 ,  C04B24/023

摘要： The present invention provides a method for improving the durability of cement-hydraulic substances, the method decreasing the dry shrinkage of cement-hydraulic-set substances such as concrete, mortar or related substances, and increasing resistance to a repetition of the freezing and thawing of the cement-hydraulic-set substances, by the use of terminal alkyletherified compounds or terminal alkylesterified compounds of polymers having --C.sub.2 H.sub.5 O-- and/or --C.sub.3 H.sub.6 O-- as a repetitive unit.

摘要翻译： 本发明提供一种提高水泥水泥物质的耐久性的方法，该方法降低水泥 - 水硬性物质如混凝土，砂浆或相关物质的干收缩率，并增加对重复冻融的抵抗力 通过使用末端烷基醚化化合物或具有-C 2 H 5 O-和/或-C 3 H 6 O-的聚合物的末端烷基酯化化合物作为重复单元，水泥水硬性物质。

公开(公告)号：US4583909A

公开(公告)日：1986-04-22

申请号：US574096

申请日：1984-01-11

申请人： Kazuichi Yamashita ,  Toshio Saito ,  Keiichi Zin ,  Yoshiro Takemoto

发明人： Kazuichi Yamashita ,  Toshio Saito ,  Keiichi Zin ,  Yoshiro Takemoto

IPC分类号： B23Q1/58 ,  B23Q37/00 ,  B25J9/02 ,  B25J9/08 ,  B25J9/18 ,  B66F11/00 ,  B25J11/00

CPC分类号： B25J9/023 ,  B23Q1/58 ,  B23Q37/00 ,  B25J9/08 ,  Y10T403/7194

摘要： An industrial robot having a plurality of units each consisting of a unit body provided with a movable block having a mounting surface, a side placed parallel to this movable block, exposing only small parts of its mounting surface, a mounting bottom extending perpendicular to this side and a guide which supports the aforementioned movable block in such a way that it is movable parallel to the mounting surface and in a straight line in a definite range, a driving device on the unit body to drive the movable block, and a control device for controlling this driving device, the plurality of units being coupled in such a way that the straight line moving directions of the movable blocks of each two coupled units are at a right angle. The units are connected through a mounting structure having a first mounting surface on the mounting surface of the movable block of one of the aforementioned units and a second mounting surface which makes a right angle to this first mounting surface and on which the mounting surface of the unit body of the other unit is placed, whereby various movements can be obtained by coupling of respective units through the mounting structure.

摘要翻译： PCT No.PCT / JP83 / 00141 Sec。 371日期1984年1月11日 102（e）日期1984年1月11日PCT提交1983年5月12日PCT公布。 出版物WO83 / 03995 日本1983年11月24日。具有多个单元的工业机器人，每个单元由单元体组成，单元体设置有具有安装表面的可移动块，平行于该可移动块的侧面，仅暴露其安装表面的小部分， 垂直于该侧延伸的安装底部和支撑上述可移动块的引导件，使得其能够平行于安装表面移动并且在一定范围内以直线移动，该单元主体上的驱动装置用于驱动可移动的 块和用于控制该驱动装置的控制装置，多个单元以这样的方式联接，使得每两个耦合单元的可移动块的直线移动方向成直角。 这些单元通过安装结构连接，该安装结构具有在上述单元之一的可移动块的安装表面上的第一安装表面和与该第一安装表面成直角的第二安装表面， 放置另一单元的单元体，由此可以通过将各单元通过安装结构联接而获得各种运动。

公开(公告)号：US4551367A

公开(公告)日：1985-11-05

申请号：US606343

申请日：1984-05-02

申请人： Toshio Nagatani ,  Norio Chiba ,  Takao Hatanaka ,  Toshio Saito

发明人： Toshio Nagatani ,  Norio Chiba ,  Takao Hatanaka ,  Toshio Saito

IPC分类号： B65D81/24 ,  G03C3/00 ,  B65D65/40

CPC分类号： G03C3/00

摘要： A packaged photographic product, comprising a composite having a light-sensitive photographic material interposed between protective materials, which composite is further packaged within a barrier packaging material, said barrier packaging material having at least a metal layer provided internally and at least one layer of a polyolefin or a polyolefin derivative prepared by extrusion lamination, and said product also satisfying at least one of the conditions (a) and (b) shown below:condition (a): the surface potential of said barrier packaging material on the side of said protective material having an absolute value of not higher than 75 V;condition (b): the surface specific resistance of said protective material being not higher than 1.times.10.sup.11 .OMEGA. under the condition of the relative humidity of 60%.

摘要翻译： 一种包装的照相产品，包括具有插入在保护材料之间的感光照相材料的复合材料，该复合材料进一步包装在阻隔性包装材料内，所述阻挡性包装材料至少具有内部提供的金属层和至少一层 聚烯烃或通过挤出层压制备的聚烯烃衍生物，并且所述产品还满足以下条件（a）和（b）中的至少一个：条件（a）：所述阻挡包装材料在所述保护层侧面上的表面电位 绝对值不高于75V的材料; 条件（b）：在相对湿度为60％的条件下，所述保护材料的表面电阻率不高于1×10 11欧米茄。

公开(公告)号：US4066378A

公开(公告)日：1978-01-03

申请号：US737419

申请日：1976-11-01

申请人： Toshio Saito ,  Tadahiko Kobayashi

发明人： Toshio Saito ,  Tadahiko Kobayashi

IPC分类号： B23B39/16 ,  B23B39/18

CPC分类号： B23B39/16 ,  Y10T408/3811

摘要： A multi-spindle drilling machine which can perform drilling and tapping using a number of spindles in such a way that by dividing the pitch circle of the holes to be worked into several divisions, all holes are machined by a number of strokes of the spindle head. The setting of the tool spindles is done within a short time by a simple arrangement with the aid of a conventional electronic calculator.

公开(公告)号：US07948088B2

公开(公告)日：2011-05-24

申请号：US12063606

申请日：2006-08-25

申请人： Toshio Saito ,  Satoshi Moriya ,  Morio Nakamura ,  Goichi Yokoyama ,  Tatsuyuki Saito ,  Nobuaki Miyakawa

发明人： Toshio Saito ,  Satoshi Moriya ,  Morio Nakamura ,  Goichi Yokoyama ,  Tatsuyuki Saito ,  Nobuaki Miyakawa

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/763 ,  H01L21/76898 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/45 ,  H01L24/48 ,  H01L25/50 ,  H01L27/0203 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： In order to improve the manufacturing yield of a semiconductor device having a three-dimensional structure in which a plurality of chips are stacked and attached to each other, the opening shape of each of conductive grooves (4A) formed in each chip (C2) obtained from a wafer (W2) is rectangular, and the number of the conductive grooves (4A) whose long-sides are directed in a Y direction and the number of the conductive grooves (4A) whose long-sides are directed in an X direction perpendicular to the Y direction are made to be approximately equal to each other number in the entire wafer (W2), whereby the film stress upon embedding of a conductive film into the interior of the conductive grooves is reduced, and generation of exfoliation and micro-cracks in the conductive film or warpage and cracks of the wafer (W2) are prevented.

摘要翻译： 为了提高具有多个芯片彼此堆叠并附接的三维结构的半导体器件的制造成品，形成在每个芯片（C2）中的每个导电槽（4A）的开口形状获得 从晶片（W2）的长方形的长方形的导体槽（4A）的长度方向的长度方向的数量和长边方向的X方向的导体槽的数量 使整个晶片（W2）的Y方向大致相等，由此导电膜嵌入导电槽内的膜应力减小，剥离和微裂纹的产生 导致膜或翘曲和晶片（W2）的裂纹被阻止。

公开(公告)号：US07795137B2

公开(公告)日：2010-09-14

申请号：US12063718

申请日：2006-08-25

申请人： Toshio Saito ,  Akira Otaguro ,  Manabu Otake ,  Yoshiya Takahira ,  Namio Katagiri ,  Nobuaki Miyakawa

发明人： Toshio Saito ,  Akira Otaguro ,  Manabu Otake ,  Yoshiya Takahira ,  Namio Katagiri ,  Nobuaki Miyakawa

IPC分类号： H01L21/4763

CPC分类号： H01L25/50 ,  H01L21/76898 ,  H01L21/823871 ,  H01L23/481 ,  H01L23/585 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L27/0694 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： When a tungsten film (43) is embedded inside of a conductive groove (4A) formed in a wafer (W2) and a silicon oxide film (36) thereon and having a high aspect ratio, film formation and etch back of the tungsten film (43) are successively performed in a chamber of the same apparatus, therefore, a film thickness of the tungsten film (43) deposited in one film formation step is made to be thin. Whereby problems, such as exfoliation of the tungsten film (43), generation of micro-cracks, and occurrence of warpage and cracks of the wafer (W2), are avoided.

摘要翻译： 当将钨膜（43）嵌入形成在晶片（W2）和氧化硅膜（36）上的导电槽（4A）内并具有高纵横比，钨膜的成膜和回蚀（ 43）在相同装置的腔室中连续地进行，因此，在一个成膜步骤中沉积的钨膜（43）的膜厚变薄。 由此，避免了钨膜（43）的剥离，微裂纹的产生，以及晶片（W2）的翘曲和裂纹的发生等问题。

公开(公告)号：US07777346B2

公开(公告)日：2010-08-17

申请号：US12345917

申请日：2008-12-30

申请人： Kensuke Ishikawa ,  Tatsuyuki Saito ,  Masanori Miyauchi ,  Toshio Saito ,  Hiroshi Ashihara

发明人： Kensuke Ishikawa ,  Tatsuyuki Saito ,  Masanori Miyauchi ,  Toshio Saito ,  Hiroshi Ashihara

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/2855 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.

摘要翻译： 在制造半导体集成电路器件时，在形成于半导体衬底上的第一级互连件上的层间绝缘膜中形成互连沟槽和接触孔，在沟槽和接触孔内部形成阻挡膜，使其膜 厚度从孔的底部的中心朝向接触孔底部的侧壁增加，在阻挡膜上形成铜膜，并且通过抛光形成第二级互连和连接器部分（插塞） 通过CMP。 以这种方式，通过连接器部分（插头）从第二级互连件流向第一级互连件的电流的几何最短路径与具有最低电阻的薄阻挡膜部分不一致，使得 电流路径可以分散，并且电子的浓度不容易发生。

公开(公告)号：US20090115063A1

公开(公告)日：2009-05-07

申请号：US12345917

申请日：2008-12-30

申请人： Kensuke Ishikawa ,  Tatsuyuki Saito ,  Masanori Miyauchi ,  Toshio Saito ,  Hiroshi Ashihara

发明人： Kensuke Ishikawa ,  Tatsuyuki Saito ,  Masanori Miyauchi ,  Toshio Saito ,  Hiroshi Ashihara

IPC分类号： H01L23/52

CPC分类号： H01L21/2855 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.

摘要翻译： 在制造半导体集成电路器件时，在形成于半导体衬底上的第一级互连件上的层间绝缘膜中形成互连沟槽和接触孔，在沟槽和接触孔内部形成阻挡膜，使其膜 厚度从孔的底部的中心朝向接触孔底部的侧壁增加，在阻挡膜上形成铜膜，并且通过抛光形成第二级互连和连接器部分（插塞） 通过CMP。 以这种方式，通过连接器部分（插头）从第二级互连件流向第一级互连件的电流的几何最短路径与具有最低电阻的薄阻挡膜部分不一致，使得 电流路径可以分散，并且电子的浓度不容易发生。

公开(公告)号：US20050013661A1

公开(公告)日：2005-01-20

申请号：US10491319

申请日：2001-09-28

申请人： Toshio Saito ,  Kenichi Harakawa ,  Yoshitaka Wakinaka ,  Takeshi Kunishima ,  Kenichi Yoshimura ,  Yoshifumi Fujii ,  Shin-ichiro Andoh ,  Takeo Iwata ,  Masakazu Sato

发明人： Toshio Saito ,  Kenichi Harakawa ,  Yoshitaka Wakinaka ,  Takeshi Kunishima ,  Kenichi Yoshimura ,  Yoshifumi Fujii ,  Shin-ichiro Andoh ,  Takeo Iwata ,  Masakazu Sato

IPC分类号： E01C7/00 ,  E01C9/00 ,  E01C11/16 ,  H01Q17/00

CPC分类号： E01C11/16 ,  E01C7/00 ,  E01C9/00 ,  H01Q17/00 ,  H01Q17/004 ,  H01Q17/005

摘要： An electromagnetic absorber formed of conductive fiber or the like, such as carbon fiber having an overall length corresponding to the wavelength of electromagnetic waves to be absorbed, is mixed into a base material to form an electromagnetic wave-absorbing pavement material. The electromagnetic wave-absorbing pavement material is used to form a pavement having an electromagnetic wave absorbing course. Further, an electromagnetic wave reflecting course is disposed under the electromagnetic wave absorbing course, and the electric length of the electromagnetic wave reflecting course is set to a predetermined value in relation to the dielectric constant so that electromagnetic waves reflecting off the surface of the electromagnetic wave absorbing course and electromagnetic waves reflecting off the electromagnetic wave reflecting course have opposite phases and thereby cancel each other out, whereby the electromagnetic waves are absorbed well. Moreover, the pavement having the electromagnetic wave absorbing course is formed such that the average dielectric constant along a plane orthogonal to a direction of thickness of the electromagnetic wave absorbing course increases from the top surface to the bottom surface thereof. With this structure, the electromagnetic waves easily enter the top surface of a surface course formed of the electromagnetic wave-absorbing pavement material. Thus, the electromagnetic waves directly reflecting off the top surface of the surface course formed of the electromagnetic wave-absorbing pavement material (i.e., directly reflected waves) are reduced, such that the proportion of the electromagnetic waves entering the surface course formed of the electromagnetic wave-absorbing pavement material is increased. As a result, the electromagnetic waves are efficiently absorbed by the electromagnetic wave absorbing course.

摘要翻译： 由导电纤维等形成的电磁吸收剂，其总长度对应于要被吸收的电磁波的波长的碳纤维，混入基材中，形成电磁波吸收路面材料。 电磁波吸收路面材料用于形成具有电磁波吸收过程的路面。 此外，在电磁波吸收路径下设置电磁波反射路线，电磁波反射路径的电长度相对于介电常数设定为规定值，使得从电磁波的表面反射的电磁波 反射离开电磁波反射过程的吸收过程和电磁波具有相反的相位，从而彼此抵消，从而电磁波被良好地吸收。 此外，具有电磁波吸收过程的路面形成为使得沿着与电磁波吸收过程的厚度方向正交的平面的平均介电常数从顶表面向底面增加。 利用这种结构，电磁波容易进入由电磁波吸收路面材料形成的表面层的顶面。 因此，由电磁波吸收路面材料（即直接反射波）形成的表面的顶表面直接反射的电磁波被减少，使得进入电磁波的电磁波的比例由电磁波形成 波浪吸收路面材料增加。 结果，电磁波被电磁波吸收过程有效地吸收。