公开(公告)号：US08324018B2

公开(公告)日：2012-12-04

申请号：US12641701

申请日：2009-12-18

申请人： Toshiyuki Isa ,  Gen Fujii ,  Masafumi Morisue ,  Ikuko Kawamata

发明人： Toshiyuki Isa ,  Gen Fujii ,  Masafumi Morisue ,  Ikuko Kawamata

IPC分类号： H01L21/00

CPC分类号： H01L21/288 ,  H01L21/02672 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3248 ,  H01L27/3276 ,  H01L51/0019 ,  H01L51/0022 ,  H01L51/0023 ,  H01L2924/0002 ,  Y02P80/30 ,  H01L2924/00

摘要： Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.

摘要翻译： 具有结的导电层相邻地形成，其间具有均匀的距离。 导电层的液滴在布线的长度方向上被排出到液滴的错开中心，使得排出的液滴的中心在相邻导电层之间的线宽方向上不在相同的线上。 由于液滴的中心是错开的，所以每个具有最宽的线宽（结的最宽的宽度）的导电层的部分彼此不连接，导电层可以以较短的距离相邻地形成。

公开(公告)号：US20060170111A1

公开(公告)日：2006-08-03

申请号：US11333701

申请日：2006-01-17

申请人： Toshiyuki Isa ,  Gen Fujii ,  Masafumi Morisue ,  Ikuko Kawamata

发明人： Toshiyuki Isa ,  Gen Fujii ,  Masafumi Morisue ,  Ikuko Kawamata

IPC分类号： H01L23/52

CPC分类号： H01L21/288 ,  H01L21/02672 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3248 ,  H01L27/3276 ,  H01L51/0019 ,  H01L51/0022 ,  H01L51/0023 ,  H01L2924/0002 ,  Y02P80/30 ,  H01L2924/00

摘要： Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.

公开(公告)号：US20050244995A1

公开(公告)日：2005-11-03

申请号：US11109642

申请日：2005-04-20

申请人： Kunihiko Fukuchi ,  Toshiyuki Isa ,  Gen Fujii

发明人： Kunihiko Fukuchi ,  Toshiyuki Isa ,  Gen Fujii

IPC分类号： G02F1/1343 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L27/1292 ,  G02F1/13439 ,  H01L27/3244 ,  H01L27/3297 ,  H01L51/56 ,  H01L2251/5315 ,  H01L2251/5323

摘要： An object of the present invention is to provide a method for manufacturing a display device with few steps and high yield. One feature of the invention is to form a first mask pattern having low wettability over a conductive layer, form a second mask pattern having high wettability over the conductive layer using the first mask pattern as a mask, and form a mask pattern for etching the conductive layer by removing the first mask pattern. Another feature is to form a pixel electrode by etching the conductive layer.

摘要翻译： 本发明的目的是提供一种制造具有几个步骤和高产率的显示装置的方法。 本发明的一个特征是形成在导电层上具有低润湿性的第一掩模图案，使用第一掩模图案作为掩模形成在导电层上具有高润湿性的第二掩模图案，并形成蚀刻导电性的掩模图案 通过去除第一掩模图案。 另一个特征是通过蚀刻导电层来形成像素电极。

公开(公告)号：US20050163938A1

公开(公告)日：2005-07-28

申请号：US11042518

申请日：2005-01-26

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Shinji Maekawa ,  Gen Fujii ,  Toshiyuki Isa

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Shinji Maekawa ,  Gen Fujii ,  Toshiyuki Isa

IPC分类号： C25B11/00 ,  G09G3/20 ,  G09G3/32 ,  H01L21/77 ,  H01L27/32 ,  H01L51/52 ,  H05B33/08 ,  H05B33/10 ,  H05B33/22

CPC分类号： H01L51/0022 ,  G09G3/3208 ,  G09G3/3225 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3244 ,  H01L51/055 ,  H01L51/529

摘要： The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display device, to have a predetermined shape with an excellent controllability. The method for manufacturing a display device includes the steps of: forming a lyophobic region; selectively irradiating laser beam in the lyophobic region to form a lyophilic region; selectively discharging a composition, that contains a conductive material, in the lyophilic region to form a gate electrode layer; forming a gate insulating layer and a semiconductor layer over the gate electrode layer; discharging a composition containing a conductive material over the semiconductor layer to form a source electrode layer and a drain electrode layer; and forming a pixel electrode layer on the source or drain electrode layer.

摘要翻译： 本发明提供一种显示装置及其制造方法，其通过有效地增加材料以及简化步骤来制造。 此外，本发明提供了一种用于形成用于形成显示装置的布线等图案以具有优异的可控性的预定形状的技术。 制造显示装置的方法包括以下步骤：形成疏液区域; 选择性地将激光束照射在疏液区域以形成亲液性区域; 选择性地将含有导电材料的组合物在亲液区域中排出以形成栅极电极层; 在栅电极层上形成栅极绝缘层和半导体层; 在半导体层上排出含有导电材料的组合物，以形成源电极层和漏电极层; 以及在源极或漏极电极层上形成像素电极层。

公开(公告)号：US20120129288A1

公开(公告)日：2012-05-24

申请号：US13361998

申请日：2012-01-31

申请人： Satoshi KOBAYASHI ,  Ikuko Kawamata ,  Koji Dairiki ,  Shigeki Komori ,  Toshiyuki Isa ,  Shunpei Yamazaki

发明人： Satoshi KOBAYASHI ,  Ikuko Kawamata ,  Koji Dairiki ,  Shigeki Komori ,  Toshiyuki Isa ,  Shunpei Yamazaki

IPC分类号： H01L33/08 ,  H01L21/336

CPC分类号： H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.

摘要翻译： 一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，以及具有高批量生产率的显示装置的制造方法。 在包括反交错通道停止型薄膜晶体管的显示装置中，反交错通道停止型薄膜晶体管包括包含沟道形成区的微晶半导体膜，以及含有杂质元素的杂质区 在微晶半导体膜的沟道形成区域中，在不与源极和漏极重叠的区域中选择性地提供一种导电型。

公开(公告)号：US08120030B2

公开(公告)日：2012-02-21

申请号：US12633067

申请日：2009-12-08

申请人： Hiromichi Godo ,  Satoshi Kobayashi ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Shunpei Yamazaki

发明人： Hiromichi Godo ,  Satoshi Kobayashi ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Shunpei Yamazaki

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L29/04

摘要： Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a first semiconductor layer; a second semiconductor layer, provided on and in contact with the first semiconductor layer; a gate insulating layer between and in contact with the gate electrode layer and the first semiconductor layer; impurity semiconductor layers in contact with the second semiconductor layer; and source and drain electrode layers partially in contact with the impurity semiconductor layers and the first and second semiconductor layers. The entire surface of the first semiconductor layer on the gate electrode layer side is covered by the gate electrode layer; and a potential barrier at a portion where the first semiconductor layer is in contact with the source or drain electrode layer is 0.5 eV or more.

摘要翻译： 其中半导体层被栅极电极遮挡光的底栅薄膜晶体管的截止电流减小。 薄膜晶体管包括栅电极层; 第一半导体层; 第二半导体层，设置在第一半导体层上并与第一半导体层接触; 在栅极电极层和第一半导体层之间并与之接触的栅极绝缘层; 与第二半导体层接触的杂质半导体层; 以及与杂质半导体层和第一和第二半导体层部分接触的源极和漏极电极层。 栅极电极层侧的第一半导体层的整个表面被栅电极层覆盖; 并且在第一半导体层与源极或漏极电极层接触的部分处的势垒为0.5eV以上。

公开(公告)号：US09519183B2

公开(公告)日：2016-12-13

申请号：US13198203

申请日：2011-08-04

申请人： Shunpei Yamazaki ,  Satoshi Toriumi ,  Toshiyuki Isa

发明人： Shunpei Yamazaki ,  Satoshi Toriumi ,  Toshiyuki Isa

IPC分类号： G02F1/1335 ,  G02F7/00

摘要： A liquid crystal display device which includes a pair of substrates, a pixel including a liquid crystal element between the pair of substrates, a lighting portion provided on the outer side of the pair of substrates, a first polarizing member between the pair of substrates and the lighting portion, a reflective member provided outside the lightning portion, a second polarizing member on a side opposite to the first polarizing member with the pair of substrates provided therebetween, and a first optical sensor and a second optical sensor. The first optical sensor has a function of detecting illuminance of external light, and the second optical sensor has a function of detecting a color tone of polarized light emitted from the pixel portion. The lightning portion can emits light having a predetermined wavelength depending on the color tone of the pixel portion which is detected by the second optical sensor.

公开(公告)号：US08994060B2

公开(公告)日：2015-03-31

申请号：US13164893

申请日：2011-06-21

申请人： Yasuhiro Jinbo ,  Toshiyuki Isa ,  Tatsuya Honda

发明人： Yasuhiro Jinbo ,  Toshiyuki Isa ,  Tatsuya Honda

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L27/12 ,  H01L27/28 ,  H01L49/02 ,  H01L21/20 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/283 ,  H01L27/3258 ,  H01L27/3274 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L51/003 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338

摘要： An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，该半导体器件是柔性的，其中使用比较低温（小于500℃）的工艺制造的元件与衬底分离。 在玻璃基板上形成钼膜之后，在钼膜上形成氧化钼膜，在氧化钼膜上层叠非金属无机膜和有机化合物膜，通过比较低温（少于 使用现有的用于大玻璃基板的制造设备来形成工艺，元件与玻璃基板分离。

公开(公告)号：US08624254B2

公开(公告)日：2014-01-07

申请号：US13226775

申请日：2011-09-07

申请人： Yuji Egi ,  Tetsuhiro Tanaka ,  Toshiyuki Isa ,  Hidekazu Miyairi ,  Koji Dairiki ,  Yoichi Kurosawa ,  Kunihiko Suzuki

发明人： Yuji Egi ,  Tetsuhiro Tanaka ,  Toshiyuki Isa ,  Hidekazu Miyairi ,  Koji Dairiki ,  Yoichi Kurosawa ,  Kunihiko Suzuki

IPC分类号： H01L29/04 ,  H01L29/786

CPC分类号： H01L29/78618 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness.

摘要翻译： 提供了其中抑制电特性变化的高度可靠的晶体管。 以高生产率制造其中抑制电特性变化的高度可靠的晶体管。 提供了具有随时间图像劣化的显示装置。 一种倒置交错薄膜晶体管，其包括在栅极绝缘膜和用作源极和漏极区域的杂质半导体膜之间，包括微晶半导体区域和一对非晶半导体区域的半导体层叠体。 在微晶半导体区域中，栅绝缘膜侧的氮浓度低，与非晶半导体接触的区域的氮浓度高。 此外，与非晶半导体的界面具有不均匀性。

公开(公告)号：US08598586B2

公开(公告)日：2013-12-03

申请号：US12970460

申请日：2010-12-16

申请人： Toshiyuki Isa ,  Atsushi Hirose

发明人： Toshiyuki Isa ,  Atsushi Hirose

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/124 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78678

摘要： Disclosed is a thin film transistor including: a gate insulating layer covering a gate electrode; a microcrystalline semiconductor region over the gate insulating layer; a pair of amorphous semiconductor region over the microcrystalline semiconductor; a pair of impurity semiconductor layers over the amorphous semiconductor regions; and wirings over the impurity semiconductor layers. The microcrystalline semiconductor region has a surface having a projection and depression on the gate insulating layer side. The microcrystalline semiconductor region includes a first microcrystalline semiconductor region which is not covered with the amorphous regions and a second microcrystalline semiconductor region which is in contact with the amorphous semiconductor regions. A thickness d1 of the first microcrystalline semiconductor region is smaller than a thickness d2 of the second microcrystalline semiconductor region and d1 is greater than or equal to 30 nm.

摘要翻译： 公开了一种薄膜晶体管，包括：覆盖栅电极的栅极绝缘层; 栅极绝缘层上的微晶半导体区域; 微晶半导体上的一对非晶半导体区域; 在所述非晶半导体区域上的一对杂质半导体层; 以及杂质半导体层上的布线。 微晶半导体区域具有在栅极绝缘层侧具有突出和凹陷的表面。 微晶半导体区域包括未被无定形区域覆盖的第一微晶半导体区域和与非晶半导体区域接触的第二微晶半导体区域。 第一微晶半导体区域的厚度d1小于第二微晶半导体区域的厚度d2，d1大于或等于30nm。