摘要:
A semiconductor device made by mounting a light emitting element on a substrate, where an optically-transparent cover with a flat plate shape is installed on the light emitting element and a groove part for suppressing reflection of light emission of the light emitting element is formed in the cover.
摘要:
A method for manufacturing a package which includes: an etching step of etching a silicon substrate, and forming a via hole penetrating through the silicon substrate; and a step of embedding an electrically conductive material in the via hole, and forming a via plug, characterized in that the etching step includes a first etching step of forming the via hole in a straight shape, and a second etching step of forming the via hole in a taper shape.
摘要:
A light emitting apparatus, includes: a light emitting device accommodating body, which has a recessed portion wherein a light emitting device is accommodated; a wiring pattern, which is provided for the light emitting device accommodating body 11 and is electrically connected to the light emitting device; a light transmitting substrate, which is mounted on the light emitting device accommodating body and completely closes the recessed portion; and a phosphor-containing, ultraviolet curing resin, which is so deposited that, opposite to the light emitting device accommodating body, the face of the light transmitting member is covered.
摘要:
There is provided a semiconductor device mounted with a light emitting element, which can be downsized easily, improve light emitting efficiency and be formed easily, and a method for manufacturing the semiconductor device effectively. The semiconductor device includes a substrate, a light emitting element mounted on the substrate by flip chip bonding, a sealing structure sealing the light emitting element and a phosphor film which is formed on an internal surface of the sealing structure. The sealing structure includes a blocking portion which is formed integrally with the substrate so as to surround the light emitting element on the substrate and functions as a reflector that reflects a light emitted from the light emitting element and a cover portion which is arranged on the top of the blocking portion and is bonded to the blocking portion.
摘要:
According to a sealed structure 60 constituted by anodically bonding a silicon board 20 and a glass plate 40, an upper opening of a recessed portion 22 is sealed in an airtight state by the glass plate 40 by bonding an upper face of a wall portion 26 to the glass plate 40. A voltage applying pattern 70 is formed to surround a light transmitting region to which an optical conversion element 24 is opposed. Further, the voltage applying pattern 70 functions as a cathode pattern applied with a voltage by being brought into contact with a lower face of the cathode plate 50.
摘要:
A method of producing a light emitting apparatus including a light emitting element, a light emitting element housing having a recess for housing the light emitting element, and a translucent substrate placed on the light emitting element housing is disclosed. The disclosed method includes a fluorescent-substance-containing resin forming step of forming a fluorescent-substance-containing resin on a first side of the translucent substrate which first side is opposite to a second side of the translucent substrate which second side faces the recess. In the fluorescent-substance-containing resin forming step, luminance and chromaticity of light that is emitted from the light emitting element and then transmitted by the fluorescent-substance-containing resin are measured and a thickness of the fluorescent-substance-containing resin is adjusted based on the measured luminance and chromaticity so that light emitted from the light emitting apparatus attains the specified luminance and chromaticity.
摘要:
A method of manufacturing a light emitting apparatus including a light emitting device and a light emitting device installing body having a concave part for installing the light emitting device therein is disclosed. The method includes the steps of a) forming a coating of plural fluorophor particles covering the light emitting device installed in the concave part, and b) forming a transparent resin covering the plural fluorophor particle coating. Step b) includes a step of performing illumination with the light emitting device so that the light emitted from the light emitting apparatus has a predetermined luminance and chromaticity.
摘要:
A light emitting device is disclosed. The light emitting device includes a light emitting element (15), and a light emitting element container (11) having a concave section (20) for containing the light emitting element (15). The concave section (20) includes a side surface (20A) and a bottom surface (20B) almost orthogonal to the side surface (20A). The light emitting device further includes a conductive paste layer (17) formed of a conductive paste in which metal particles are dispersed in a solution, and the conductive paste layer (17) includes a slanting surface (17A) on the side surface (20A) and the bottom surface (20B).
摘要:
There is provided a semiconductor device mounted with a light emitting element, which can be downsized easily, improve light emitting efficiency and be formed easily, and a method for manufacturing the semiconductor device effectively. The semiconductor device includes a substrate, a light emitting element mounted on the substrate by flip chip bonding, a sealing structure sealing the light emitting element and a phosphor film which is formed on an internal surface of the sealing structure. The sealing structure includes a blocking portion which is formed integrally with the substrate so as to surround the light emitting element on the substrate and functions as a reflector that reflects a light emitted from the light emitting element and a cover portion which is arranged on the top of the blocking portion and is bonded to the blocking portion.
摘要:
In a semiconductor device 100, a light emitting element 120 has been mounted on an upper plane of a semiconductor substrate 102. In an impurity diffusion region of the semiconductor substrate 102, a P conducting type of a layer 104, and an N layer 106 have been formed, while an N conducting type impurity is implanted to the P layer 104, and then the implanted impurity is diffused to constitute the N layer 106. A zener diode 108 made of a semiconductor device has been formed by the P layer 104 and the N layer 106.