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116 条记录 (耗时 0.023 秒)

    Process for depositing a superconducting thin film
    11.
    发明授权
    Process for depositing a superconducting thin film 失效
    沉积超薄膜的工艺

    公开(公告)号：US5057201A

    公开(公告)日：1991-10-15

    申请号：US462983

    申请日：1990-01-10

    申请人： Nobuhiko Fujita ,  Naoji Fujimori ,  Hideo Itozaki ,  Saburo Tanaka ,  Keizo Harada ,  Tetsuji Jodai

    发明人： Nobuhiko Fujita ,  Naoji Fujimori ,  Hideo Itozaki ,  Saburo Tanaka ,  Keizo Harada ,  Tetsuji Jodai

    IPC分类号： C04B35/45 ,  C23C14/08 ,  C23C14/34 ,  C23C14/40 ,  H01L39/24

    CPC分类号： C23C14/3414 ,  C04B35/4504 ,  C23C14/087 ,  H01L39/2435 ,  Y10S505/816 ,  Y10S505/818 ,  Y10S505/819

    摘要： This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering of a powder mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by a final sintering of preliminary sintered material at a temperature ranging from 700.degree. to 1,500.degree. C., preferably from 700.degree. to 1,300.degree. C. The physical vapor deposition is performed by high-frequency sputtering technique under Ar and O.sub.2 containing atmosphere, at a partial pressure of Ar ranging from 1.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr, preferably 5.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr and at a partial pressure of O.sub.2 ranging from 0.5.times.10.sup.-3 to 1.times.10.sup.-1 Torr, preferably 1.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr. The obtained thin film may be further heat-treated at a temperature ranging from 250.degree. C. to 1,700.degree. C., preferably from 250.degree. C. to 1,200.degree. C.

    Method of producing single crystal
    18.
    发明申请
    Method of producing single crystal 有权
    生产单晶的方法

    公开(公告)号：US20060266279A1

    公开(公告)日：2006-11-30

    申请号：US11274148

    申请日：2005-11-16

    申请人： Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Yuji Horino ,  Naoji Fujimori

    发明人： Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Yuji Horino ,  Naoji Fujimori

    IPC分类号： C30B7/00 ,  C30B21/02 ,  C30B28/06

    CPC分类号： C30B25/20 ,  C30B7/005 ,  C30B29/04 ,  Y10S117/902

    摘要： The present invention provides a method for producing a single crystals by preferential epitaxial growth of {100} face, the method comprising the steps of (1) growing the crystal on a single crystal {100} substrate; (2) forming on the side of the grown crystal a surface parallel to a {100} face different from the {100} face in the growth direction, and (3) growing the crystal on the formed {100} surface; and the steps (2) and (3) being performed once or more than once. The present invention further provides a method for producing a single-crystal diamond wherein used is a metallic holder for the single-crystal diamond having a crystal holding portion which is raised above an outer peripheral portion of the holder, is apart from the outer peripheral portion of the holder, and has a recessed shape. According to the present invention, a method for producing a single crystal by epitaxial growth, in particular a method for producing a single-crystal diamond using gaseous phase synthetic methods enable the production of a large single-crystal diamond in a comparatively short time at low cost.

    摘要翻译： 本发明提供了通过{100}面的优先外延生长来制造单晶的方法，该方法包括以下步骤：（1）在单晶{100}衬底上生长晶体; （2）在生长晶体的侧面上形成平行于生长方向上与{100}面不同的{100}面的表面，和（3）在所形成的{100}表面上生长晶体; 并且步骤（2）和（3）执行一次或多于一次。 本发明还提供一种用于制造单晶金刚石的方法，其中使用的是具有晶体保持部分的单晶金刚石的金属保持器，所述晶体保持部分在保持器的外周部分上方升高，与外周部分 并具有凹陷形状。 根据本发明，通过外延生长制造单晶的方法，特别是使用气相合成方法制造单晶金刚石的方法使得能够在较短时间内生产大型单晶金刚石 成本。

    Method of polishing a hard material-coated wafer
    19.
    发明授权
    Method of polishing a hard material-coated wafer 失效
    抛光硬质材料涂层晶片的方法

    公开(公告)号：US06193585B1

    公开(公告)日：2001-02-27

    申请号：US09048291

    申请日：1998-03-26

    申请人： Keiichiro Tanabe ,  Akihoko Ikegaya ,  Yuichiro Seki ,  Naoji Fujimori

    发明人： Keiichiro Tanabe ,  Akihoko Ikegaya ,  Yuichiro Seki ,  Naoji Fujimori

    IPC分类号： B24B100

    CPC分类号： C23C16/56 ,  B24B37/04 ,  B24B37/042 ,  B24B37/107 ,  B24B37/30 ,  C23C16/27 ,  H01L21/02024 ,  H01L21/30625 ,  Y10T428/24355 ,  Y10T428/24975 ,  Y10T428/30

    摘要： A method of producing and polishing a hard-material-coated wafer. A hard-material film is disposed on a substrate to form the wafer and provide the wafer with a convex shape. A surface of the substrate is fixed on a holder of a polishing machine having a whetstone turn-table. The holder is rotated about its axis, and the whetstone turn-table is revolved about its shaft. The convex film surface of the hard-material film is polished on the whetstone turn-table while the inclination angle of the holder relative to the turn-table is changed. In this way, the convex film surface is polished either from its center to its periphery or from its periphery to its center.

    摘要翻译： 一种生产和抛光硬质材料涂层晶片的方法。 将硬质材料膜设置在基板上以形成晶片并为晶片提供凸形。 基板的表面固定在具有砂轮转台的抛光机的支架上。 保持器围绕其轴线旋转，并且砂轮转台围绕其轴旋转。 在砂轮转台上抛光硬质材料膜的凸形膜表面，同时保持器相对于转台的倾斜角度改变。 以这种方式，凸面膜表面从其中心到其周边或从其周边到其中心被抛光。

    Process for the vapor phase synthesis of diamond and highly crystalline diamond
    20.
    发明授权
    Process for the vapor phase synthesis of diamond and highly crystalline diamond 失效
    气相合成金刚石和高结晶金刚石的工艺

    公开(公告)号：US5776552A

    公开(公告)日：1998-07-07

    申请号：US401291

    申请日：1995-03-09

    申请人： Keiichiro Tanabe ,  Naoji Fujimori

    发明人： Keiichiro Tanabe ,  Naoji Fujimori

    IPC分类号： C30B29/04 ,  C23C16/27 ,  C30B25/10 ,  H05H1/24

    CPC分类号： C23C16/27 ,  C23C16/272 ,  C23C16/274 ,  C23C16/276 ,  C23C16/277 ,  C30B25/105

    摘要： High quality diamond excellent in crystalline property as well as transparency, can be synthesized at a high growth speed by a process which comprises using, as a raw material gas, a mixed gas of hydrogen gas A, an inert gas B, a carbon atom-containing gas C and an oxygen atom-containing inorganic gas D in such a proportion as satisfying the following relationship by mole ratio: 0.001.ltoreq.B/(A+B+C+D).ltoreq.0.95 0.001.ltoreq.C/(A+B+C+D).ltoreq.0.1 0.0005.ltoreq.D/C.ltoreq.10 except that the carbon atom-containing gas C and the oxygen atom-containing inorganic gas D, cannot simultaneously be the same gas feeding the mixed gas into a reactor in which plasma is then formed by applying a DC or AC electric field at a pressure of 10 to 760 torr and thereby depositing and forming diamond on a substrate arranged in the reactor.

    摘要翻译： 优异的结晶性和透明性的金刚石可以通过以氢气A，惰性气体B，碳原子数为1的气体作为原料气体的原料气体的制造方法以高生长速度合成， 含有气体C和含氧原子的无机气体D的摩尔比满足以下关系：0.001