公开(公告)号：US07140096B2

公开(公告)日：2006-11-28

申请号：US10626707

申请日：2003-07-25

申请人： Tatsuya Kishi ,  Shigeki Takahashi ,  Kentaro Nakajima ,  Minoru Amano ,  Masayuki Sagoi ,  Yoshiaki Saito

发明人： Tatsuya Kishi ,  Shigeki Takahashi ,  Kentaro Nakajima ,  Minoru Amano ,  Masayuki Sagoi ,  Yoshiaki Saito

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/398 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/3254 ,  H01L43/08 ,  Y10S428/90 ,  Y10T29/49043 ,  Y10T29/49048 ,  Y10T29/4905 ,  Y10T29/49052 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/265 ,  Y10T428/32

摘要： A method of manufacturing a magnetoresistance effect device, including: forming a first ferromagnetic body, a nonmagnetic dielectric layer on the first ferromagnetic body, and a second ferromagnetic body on the nonmagnetic dielectric layer; etching part of an external region of a predetermined ferromagnetic tunnel junction region using a first linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region; and etching another part of the external region of the predetermined ferromagnetic tunnel junction region using a second linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region and intersecting with the first linear mask pattern.

摘要翻译： 一种制造磁阻效应器件的方法，包括：在第一铁磁体上形成第一铁磁体，非磁性介质层和非磁介质层上的第二铁磁体; 使用穿过所述预定铁磁隧道结区域的第一线性掩模图案来蚀刻预定铁磁隧道结区域的外部区域的一部分; 以及使用穿过所述预定铁磁隧道结区并与所述第一线性掩模图案相交的第二线性掩模图案来蚀刻所述预定铁磁隧道结区域的外部区域的另一部分。

公开(公告)号：US06995962B2

公开(公告)日：2006-02-07

申请号：US10968336

申请日：2004-10-20

申请人： Yoshiaki Saito ,  Masayuki Sagoi ,  Minoru Amano ,  Kentaro Nakajima ,  Shigeki Takahashi ,  Tatsuya Kishi

发明人： Yoshiaki Saito ,  Masayuki Sagoi ,  Minoru Amano ,  Kentaro Nakajima ,  Shigeki Takahashi ,  Tatsuya Kishi

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3954 ,  G11C11/15 ,  G11C11/16 ,  H01L27/224 ,  H01L27/228

摘要： There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.

摘要翻译： 提供了一种磁阻效应元件，包括第一被钉扎铁磁层，面对第一被钉扎铁磁层的第二钉扎铁磁层，第一和第二钉扎铁磁层彼此面对的表面区域在组成上彼此不同，自由铁磁性 介于第一和第二被钉扎铁磁层之间的介电层，介于第一被钉扎铁磁层和自由铁磁层之间的第一隧道势垒层以及介于第二钉扎铁磁层与自由铁磁层之间的第二隧道势垒层。

公开(公告)号：US06965138B2

公开(公告)日：2005-11-15

申请号：US10702574

申请日：2003-11-07

申请人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

发明人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

IPC分类号： H01L27/105 ,  C23F4/00 ,  G11C11/00 ,  G11C11/02 ,  H01F10/32 ,  H01F41/30 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/22 ,  H01L29/76 ,  H01L31/119 ,  H01L43/08 ,  H01L43/12

CPC分类号： C23F4/00 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F41/308 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

公开(公告)号：US06916677B2

公开(公告)日：2005-07-12

申请号：US10798571

申请日：2004-03-12

申请人： Kentaro Nakajima ,  Minoru Amano

发明人： Kentaro Nakajima ,  Minoru Amano

IPC分类号： H01L27/105 ,  G11C7/00 ,  G11C11/15 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/76 ,  H01L43/08

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/16

摘要： A magnetic memory device includes a memory cell portion, a peripheral circuit portion positioned in the vicinity of the memory cell portion, a plurality of first magnetoresistive effect elements which are arranged in the memory cell portion and function as memory elements, and a plurality of second magnetoresistive effect elements which are arranged in at least a part of the peripheral circuit portion and function as dummies, wherein a sum total of occupying areas of the second magnetoresistive effect elements is 5% to 80% of the peripheral circuit portion.

摘要翻译： 磁存储器件包括存储单元部分，位于存储单元部分附近的外围电路部分，多个第一磁阻效应元件，被布置在存储单元部分中并用作存储元件，并且多个第二 磁阻效应元件布置在外围电路部分的至少一部分中并用作虚拟物，其中第二磁阻效应元件的占据面积的总和为外围电路部分的5％至80％。

公开(公告)号：US20060146451A1

公开(公告)日：2006-07-06

申请号：US11367483

申请日：2006-03-06

申请人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

发明人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L27/224 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/115

摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

公开(公告)号：US20060092692A1

公开(公告)日：2006-05-04

申请号：US11305203

申请日：2005-12-19

申请人： Yoshihisa Iwata ,  Kentaro Nakajima

发明人： Yoshihisa Iwata ,  Kentaro Nakajima

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： Setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.

摘要翻译： 确定写入字/位线电流的供应/截止时间，幅度和时间变化（电流波形）的设置数据被登记在设置电路中。 写入电流波形控制电路根据设定数据生成写字线驱动信号，写字线吸收信号，写位线驱动信号和写位线吸收信号。 对每个芯片或存储单元阵列控制写入字/位线电流的当前波形。

公开(公告)号：US20050254289A1

公开(公告)日：2005-11-17

申请号：US11171323

申请日：2005-07-01

申请人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

发明人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

IPC分类号： H01L27/105 ,  C23F4/00 ,  G11C11/00 ,  G11C11/02 ,  H01F10/32 ,  H01F41/30 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/22 ,  H01L29/76 ,  H01L31/119 ,  H01L43/08 ,  H01L43/12

CPC分类号： C23F4/00 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F41/308 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

摘要翻译： 一种制造磁存储器件的方法包括在衬底上形成绝缘层，在绝缘层上形成下电极，在下电极的上表面上形成磁阻膜，该磁阻膜包括绝缘屏障 层和层叠在绝缘阻挡层的两侧的多个磁性膜，使用掩模层作为掩模将掩模层堆叠在磁阻膜上，对磁阻膜进行离子蚀刻，从而形成磁 电阻元件，在掩模的上表面，磁阻元件和下电极上形成绝缘膜，并用离子束蚀刻绝缘膜，使得磁阻元件的侧表面露出。

公开(公告)号：US06934196B2

公开(公告)日：2005-08-23

申请号：US10200489

申请日：2002-07-23

申请人： Koichi Fujisaki ,  Kentaro Nakajima ,  Takeshi Chujoh ,  Yasuhiro Taniguchi

发明人： Koichi Fujisaki ,  Kentaro Nakajima ,  Takeshi Chujoh ,  Yasuhiro Taniguchi

IPC分类号： G06F12/02 ,  G11C8/10 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C7/00

CPC分类号： G06F12/0207 ,  G11C8/10

摘要： A memory cell module comprises a memory cell array formed by memory cells of M columns×N rows. Each memory cell includes a magnetoresistive element or a magnetresistive element with a semiconductor element. A memory module comprises a first access means to access the memory cell array by a column direction and a second access means to access the memory cell array by a row direction. In this manner, data is read from a magnetoresistive memory module in both row and column directions.

摘要翻译： 存储单元模块包括由M列×N行的存储器单元形成的存储单元阵列。 每个存储单元包括具有半导体元件的磁阻元件或磁阻元件。 存储器模块包括通过列方向访问存储单元阵列的第一存取装置和通过行方向访问存储单元阵列的第二存取装置。 以这种方式，在行和列方向上从磁阻存储器模块读取数据。

公开(公告)号：US20050078418A1

公开(公告)日：2005-04-14

申请号：US10968336

申请日：2004-10-20

申请人： Yoshiaki Saito ,  Masayuki Sagoi ,  Minoru Amano ,  Kentaro Nakajima ,  Shigeki Takahashi ,  Tatsuya Kishi

发明人： Yoshiaki Saito ,  Masayuki Sagoi ,  Minoru Amano ,  Kentaro Nakajima ,  Shigeki Takahashi ,  Tatsuya Kishi

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01F10/26 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3954 ,  G11C11/15 ,  G11C11/16 ,  H01L27/224 ,  H01L27/228

摘要： There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.

摘要翻译： 提供了一种磁阻效应元件，包括第一被钉扎铁磁层，面对第一被钉扎铁磁层的第二钉扎铁磁层，第一和第二钉扎铁磁层彼此面对的表面区域在组成上彼此不同，自由铁磁性 介于第一和第二被钉扎铁磁层之间的介电层，介于第一被钉扎铁磁层和自由铁磁层之间的第一隧道势垒层以及介于第二钉扎铁磁层与自由铁磁层之间的第二隧道势垒层。

公开(公告)号：US06868002B2

公开(公告)日：2005-03-15

申请号：US10771537

申请日：2004-02-05

申请人： Yoshiaki Saito ,  Koichiro Inomata ,  Minoru Amano ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Tatsuya Kishi ,  Shigeki Takahashi

发明人： Yoshiaki Saito ,  Koichiro Inomata ,  Minoru Amano ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Tatsuya Kishi ,  Shigeki Takahashi

IPC分类号： G11C11/14 ,  G11C11/15 ,  H01F10/16 ,  H01F10/26 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3231 ,  H01L27/224 ,  H01L27/228

摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

摘要翻译： 提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一 插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属 纳米颗粒膜。