公开(公告)号：US09728464B2

公开(公告)日：2017-08-08

申请号：US13560513

申请日：2012-07-27

申请人： Glenn A. Glass ,  Daniel B. Aubertine ,  Anand S. Murthy ,  Gaurav Thareja ,  Tahir Ghani

发明人： Glenn A. Glass ,  Daniel B. Aubertine ,  Anand S. Murthy ,  Gaurav Thareja ,  Tahir Ghani

IPC分类号： H01L21/335 ,  H01L21/8238 ,  H01L29/10

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/8258 ,  H01L29/1054

摘要： Techniques are disclosed for customization of fin-based transistor devices to provide a diverse range of channel configurations and/or material systems within the same integrated circuit die. In accordance with one example embodiment, sacrificial fins are removed and replaced with custom semiconductor material of arbitrary composition and strain suitable for a given application. In one such case, each of a first set of the sacrificial fins is recessed or otherwise removed and replaced with a p-type material, and each of a second set of the sacrificial fins is recessed or otherwise removed and replaced with an n-type material. The p-type material can be completely independent of the process for the n-type material, and vice-versa. Numerous other circuit configurations and device variations are enabled using the techniques provided herein.

公开(公告)号：US20170047416A1

公开(公告)日：2017-02-16

申请号：US15335281

申请日：2016-10-26

申请人： Annalisa Cappellani ,  Abhijit Jayant Pethe ,  Tahir Ghani ,  Harry Gomez

发明人： Annalisa Cappellani ,  Abhijit Jayant Pethe ,  Tahir Ghani ,  Harry Gomez

IPC分类号： H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/42392 ,  B82Y10/00 ,  H01L21/30604 ,  H01L21/845 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/41725 ,  H01L29/42356 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/78696

摘要： Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional channel region is disposed above the insulating structure. Source and drain regions are disposed on either side of the three-dimensional channel region and on an epitaxial seed layer. The epitaxial seed layer is composed of a semiconductor material different from the three-dimensional channel region and disposed on the insulating structure. A gate electrode stack surrounds the three-dimensional channel region with a portion disposed on the insulating structure and laterally adjacent to the epitaxial seed layer.

摘要翻译： 描述了形成在全局或局部隔离的基板上的应变门全面半导体器件。 例如，半导体器件包括半导体衬底。 绝缘结构设置在半导体衬底之上。 三维沟道区设置在绝缘结构的上方。 源极和漏极区域设置在三维沟道区域的两侧和外延晶种层上。 外延种子层由不同于三维沟道区的半导体材料构成，并且设置在绝缘结构上。 栅极电极堆叠围绕三维沟道区域，其中设置在绝缘结构上并且横向邻近外延籽晶层的部分。

公开(公告)号：US20170004998A1

公开(公告)日：2017-01-05

申请号：US15266819

申请日：2016-09-15

申请人： Abhijit Jayant Pethe ,  Tahir Ghani ,  Mark Bohr ,  Clair Webb ,  Harry Gomez ,  Annalisa Cappellani

发明人： Abhijit Jayant Pethe ,  Tahir Ghani ,  Mark Bohr ,  Clair Webb ,  Harry Gomez ,  Annalisa Cappellani

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/28 ,  H01L23/522 ,  H01L29/66 ,  H01L21/311

CPC分类号： H01L21/76897 ,  H01L21/28008 ,  H01L21/31111 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/53257 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/785

摘要： Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure has a portion disposed above the active region and a portion disposed above the isolation region of the substrate. Source and drain regions are disposed in the active region of the substrate, on either side of the portion of the gate structure disposed above the active region. A gate contact structure is disposed on the portion of the gate structure disposed above the active region of the substrate.

摘要翻译： 描述了设置在门的有效部分上的栅极接触结构以及形成这种栅极接触结构的方法。 例如，半导体结构包括具有有源区和隔离区的衬底。 栅极结构具有设置在有源区上方的部分和设置在衬底的隔离区上方的部分。 源极和漏极区域设置在衬底的有源区域中，位于栅极结构的位于有源区域之上的部分的任一侧上。 栅极接触结构设置在栅极结构的设置在衬底的有源区上方的部分上。

公开(公告)号：US20140191300A1

公开(公告)日：2014-07-10

申请号：US13997161

申请日：2011-12-31

申请人： Ritesh Jhaveri ,  Bernard Sell ,  Tahir Ghani

发明人： Ritesh Jhaveri ,  Bernard Sell ,  Tahir Ghani

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/0638 ,  H01L21/823431 ,  H01L21/823821 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/785

摘要： A hard mask etch stop is formed on the top surface of tall fins to preserve the fin height and protect the top surface of the fin from damage during etching steps of the transistor fabrication process. In an embodiment, the hard mask etch stop is formed using a dual hard mask system, wherein a hard mask etch stop layer is formed over the surface of a substrate, and a second hard mask layer is used to pattern a fin with a hard mask etch stop layer on the top surface of the fin. The second hard mask layer is removed, while the hard mask etch stop layer remains to protect the top surface of the fin during subsequent fabrication steps.

摘要翻译： 在高鳍的顶表面上形成硬掩模蚀刻停止件以保持翅片高度，并且在晶体管制造工艺的蚀刻步骤期间保护翅片的顶表面免受损坏。 在一个实施例中，使用双硬掩模系统形成硬掩模蚀刻停止件，其中在衬底的表面上形成硬掩模蚀刻停止层，并且使用第二硬掩模层来用硬掩模 在鳍的顶表面上的蚀刻停止层。 去除第二硬掩模层，同时保留硬掩模蚀刻停止层以在随后的制造步骤期间保护翅片的顶表面。

公开(公告)号：US08735869B2

公开(公告)日：2014-05-27

申请号：US13629135

申请日：2012-09-27

申请人： Annalisa Cappellani ,  Abhijit Jayant Pethe ,  Tahir Ghani ,  Harry Gomez

发明人： Annalisa Cappellani ,  Abhijit Jayant Pethe ,  Tahir Ghani ,  Harry Gomez

IPC分类号： H01L29/06

CPC分类号： H01L29/42392 ,  B82Y10/00 ,  H01L21/30604 ,  H01L21/845 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/41725 ,  H01L29/42356 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/78696

摘要： Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional channel region is disposed above the insulating structure. Source and drain regions are disposed on either side of the three-dimensional channel region and on an epitaxial seed layer. The epitaxial seed layer is composed of a semiconductor material different from the three-dimensional channel region and disposed on the insulating structure. A gate electrode stack surrounds the three-dimensional channel region with a portion disposed on the insulating structure and laterally adjacent to the epitaxial seed layer.

摘要翻译： 描述了形成在全局或局部隔离的基板上的应变门全面半导体器件。 例如，半导体器件包括半导体衬底。 绝缘结构设置在半导体衬底之上。 三维沟道区设置在绝缘结构的上方。 源极和漏极区域设置在三维沟道区域的两侧和外延晶种层上。 外延种子层由不同于三维沟道区的半导体材料构成，并且设置在绝缘结构上。 栅极电极堆叠围绕三维沟道区域，其中设置在绝缘结构上并且横向邻近外延籽晶层的部分。

公开(公告)号：US20130285155A1

公开(公告)日：2013-10-31

申请号：US13976074

申请日：2011-12-20

申请人： Glenn A. Glass ,  Anand S. Murthy ,  Tahir Ghani

发明人： Glenn A. Glass ,  Anand S. Murthy ,  Tahir Ghani

IPC分类号： H01L27/092

CPC分类号： H01L29/78618 ,  H01L21/76805 ,  H01L21/76886 ,  H01L21/76895 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/267 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/78654 ,  H01L29/78684 ,  H01L29/78696

摘要： Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. In some example embodiments, the techniques can be used to implement the contacts of MOS transistors of a CMOS device, where an intermediate III-V semiconductor material layer is provided between the p-type and n-type source/drain regions and their respective contact metals to significantly reduce contact resistance. The intermediate III-V semiconductor material layer may have a small bandgap (e.g., lower than 0.5 eV) and/or otherwise be doped to provide the desired conductivity. The techniques can be used on numerous transistor architectures (e.g., planar, finned, and nanowire transistors), including strained and unstrained channel structures.

摘要翻译： 公开了用于形成相对于常规器件具有降低的寄生接触电阻的晶体管器件的技术。 在一些示例性实施例中，该技术可以用于实现CMOS器件的MOS晶体管的触点，其中在p型和n型源极/漏极区之间提供中间III-V半导体材料层及其各自的触点 金属显着降低接触电阻。 中间III-V半导体材料层可以具有小的带隙（例如，低于0.5eV）和/或以其它方式被掺杂以提供期望的导电性。 这些技术可以用于许多晶体管架构（例如，平面，鳍状和纳米线晶体管），包括应变和无约束通道结构。

公开(公告)号：US20130277752A1

公开(公告)日：2013-10-24

申请号：US13976075

申请日：2011-12-20

申请人： Glenn A. Glass ,  Anand S. Murthy ,  Tahir Ghani

发明人： Glenn A. Glass ,  Anand S. Murthy ,  Tahir Ghani

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L27/0922 ,  H01L21/28185 ,  H01L21/28525 ,  H01L21/28575 ,  H01L21/76814 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/8258 ,  H01L23/535 ,  H01L27/0605 ,  H01L27/0924 ,  H01L29/0669 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/165 ,  H01L29/20 ,  H01L29/267 ,  H01L29/41725 ,  H01L29/41783 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

摘要： Techniques are disclosed for forming low contact resistance transistor devices. A p-type germanium layer is provided between p-type source/drain regions and their respective contact metals, and an n-type III-V semiconductor material layer is provided between n-type source/drain regions and their respective contact metals. The n-type III-V semiconductor material layer may have a small bandgap (e.g.,

公开(公告)号：US20120161321A1

公开(公告)日：2012-06-28

申请号：US12978359

申请日：2010-12-23

申请人： Michael G. Haverty ,  Sadasivan Shankar ,  Tahir Ghani ,  Seongjun Park

发明人： Michael G. Haverty ,  Sadasivan Shankar ,  Tahir Ghani ,  Seongjun Park

IPC分类号： H01L23/482 ,  H01L21/3205 ,  H01L21/283 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L29/41791 ,  H01L21/283 ,  H01L21/3205 ,  H01L23/482 ,  H01L23/485 ,  H01L29/0895 ,  H01L29/456 ,  H01L29/7851 ,  H01L2924/0002 ,  H01L2924/00

摘要： Techniques are disclosed for forming contacts in silicon semiconductor devices. In some embodiments, a transition layer forms a non-reactive interface with the silicon semiconductor contact surface. In some such cases, a conductive material provides the contacts and the material forming a non-reactive interface with the silicon surface. In other cases, a thin semiconducting or insulting layer provides the non-reactive interface with the silicon surface and is coupled to conductive material of the contacts. The techniques can be embodied, for instance, in planar or non-planar (e.g., double-gate and tri-gate FinFETs) transistor devices.

摘要翻译： 公开了用于在硅半导体器件中形成接触的技术。 在一些实施例中，过渡层与硅半导体接触表面形成非反应性界面。 在一些这种情况下，导电材料提供触点和与硅表面形成非反应性界面的材料。 在其他情况下，薄的半导体或绝缘层提供与硅表面的非反应性界面并且耦合到触点的导电材料。 这些技术可以例如在平面或非平面（例如，双栅极和三栅极FinFET））晶体管器件中实现。

公开(公告)号：US20110147848A1

公开(公告)日：2011-06-23

申请号：US12655085

申请日：2009-12-23

申请人： Kelin J. Kuhn ,  Tahir Ghani ,  Justin S. Sandford

发明人： Kelin J. Kuhn ,  Tahir Ghani ,  Justin S. Sandford

IPC分类号： H01L27/088 ,  H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/823431 ,  H01L27/0886

摘要： The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming transistor fins of differing heights to obtain a performance improvement for a given type of integrated circuit within the microelectronic device.

摘要翻译： 本公开涉及制造微电子器件的领域。 在至少一个实施例中，本主题涉及形成不同高度的晶体管鳍片，以获得微电子器件内的给定类型的集成电路的性能改进。

公开(公告)号：US20110147842A1

公开(公告)日：2011-06-23

申请号：US12646518

申请日：2009-12-23

申请人： Annalisa Cappellani ,  Tahir Ghani ,  Kuan-Yueh Shen ,  Anand S. Murthy ,  Harry Gomez

发明人： Annalisa Cappellani ,  Tahir Ghani ,  Kuan-Yueh Shen ,  Anand S. Murthy ,  Harry Gomez

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66545 ,  H01L21/26506 ,  H01L21/3065 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： A channel strained multi-gate transistor with low parasitic resistance and method of manufacturing the same. A gate stack may be formed over a semiconductor fin having a gate-coupled sidewall height (Hsi), an etch rate controlling dopant may be implanted into a source/drain region of the semiconductor fin adjacent to the gate stack and into a source/drain extension region of the semiconductor fin. The doped fin region may be etched to remove a thickness of the semiconductor fin equal to at least Hsi proximate a channel region and form a source/drain extension undercut. A material may be grown on the exposed semiconductor substrate to form a regrown source/drain fin region filling the source/drain extension undercut region.

摘要翻译： 具有低寄生电阻的通道应变多栅极晶体管及其制造方法。 可以在具有栅极耦合侧壁高度（Hsi）的半导体鳍片上形成栅极堆叠，蚀刻速率控制掺杂剂可以注入到与栅极堆叠相邻的半导体鳍片的源极/漏极区域中并且被注入到源极/漏极 半导体鳍片的延伸区域。 可以蚀刻掺杂散热片区域以除去等于沟道区域附近的至少Hsi的半导体鳍片的厚度并形成源极/漏极延伸底切。 可以在暴露的半导体衬底上生长材料以形成填充源极/漏极延伸底切区域的再生长源极/漏极鳍区域。