公开(公告)号：US06861356B2

公开(公告)日：2005-03-01

申请号：US10225228

申请日：2002-08-22

申请人： Kimihiro Matsuse ,  Hayashi Otsuki

发明人： Kimihiro Matsuse ,  Hayashi Otsuki

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/49 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76877 ,  H01L23/53238 ,  H01L29/4941 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a method of forming a barrier metal which is designed to be interposed between a metal layer and an insulating layer, both constituting a multi-layered structure of semiconductor device, the method comprising the steps of positioning a substrate having the insulating layer formed thereon at a predetermined position inside a processing vessel forming a processing space, and alternately introducing a gas containing a refractory metallic atom, a gas containing Si atom and a gas containing N atom into the processing vessel under a predetermined processing pressure, thereby allowing a refractory metal nitride or a refractory metal silicon nitride to be deposited on the insulating layer by way of atomic layer deposition.

摘要翻译： 提供一种形成阻挡金属的方法，该阻挡金属被设计成介于金属层和绝缘层之间，均构成半导体器件的多层结构，该方法包括以下步骤：定位具有形成绝缘层的基板 在形成处理空间的处理容器内的预定位置上，在预定的处理压力下，将含有难熔金属原子的气体，含有Si原子的气体和含有N原子的气体交替地引入处理容器中，由此允许耐火材料 金属氮化物或难熔金属氮化硅通过原子层沉积沉积在绝缘层上。

公开(公告)号：US06404021B1

公开(公告)日：2002-06-11

申请号：US09023712

申请日：1998-02-13

申请人： Masato Koizumi ,  Kazuya Okubo ,  Tsuyoshi Takahashi ,  Tsuyoshi Hashimoto ,  Kimihiro Matsuse

发明人： Masato Koizumi ,  Kazuya Okubo ,  Tsuyoshi Takahashi ,  Tsuyoshi Hashimoto ,  Kimihiro Matsuse

IPC分类号： H01L2976

CPC分类号： H01L29/4933 ,  H01L21/28061 ,  H01L21/76889 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.

摘要翻译： 形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层 在栅极膜靶的表面上的P型杂质可能不会在多晶硅层上形成保持成膜装置中的处理对象以防止形成氧化膜的步骤， 用于形成钨硅化物膜的处理气体和P型杂质成膜装置，以在不形成氧化膜的多晶硅层上形成掺有P型杂质的杂质的硅化钨层 。

公开(公告)号：US07153773B2

公开(公告)日：2006-12-26

申请号：US10868936

申请日：2004-06-17

申请人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

发明人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： C23C16/45514 ,  C23C16/34 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76871 ,  H01L23/485 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75 ,  H01L29/4966 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.

摘要翻译： 使用TiSiN膜作为半导体器件的阻挡金属层，以防止Cu的扩散。 TiSiN膜通过等离子体CVD法或热CVD法形成。 使用TiCl 4气体，氢化硅气体和NH 3气体作为用于通过热CVD法形成TiSiN膜的源气体。 使用TiCl 4气体，氢化硅气体，H 2气体和N 2气体作为用于通过等离子体形成TiSiN膜的源气体 CVD工艺。

公开(公告)号：US06838376B2

公开(公告)日：2005-01-04

申请号：US09530588

申请日：1998-11-05

申请人： Kimihiro Matsuse ,  Hayashi Otsuki

发明人： Kimihiro Matsuse ,  Hayashi Otsuki

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L29/49 ,  H01L29/78 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/53228 ,  H01L23/53238 ,  H01L29/4941 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a barrier metal film formed of a nitride film including tungsten by thermal CVD. The method includes positioning a substrate in a processing vessel and forming a WSi film on one side of the substrate by supplying a process gas including WF6 gas and at least one of SiR4 gas, SiH2Cl2 gas and Si2H6 gas into the processing vessel while a processing pressure in the processing vessel is maintained. The method also includes shutting off the supplying of the process gas into the processing vessel and completely removing the process gas from the processing vessel by supplying a purging gas into the processing vessel after the shutting off the supplying. The WSi film is nitrided by supplying NH3 gas or MMH gas into the processing vessel from which the process gas has been removed, to form a WSixNy film.

摘要翻译： 通过热CVD形成由包含钨的氮化物膜形成的阻挡金属膜的方法。 该方法包括将基底定位在处理容器中，并通过向处理容器提供包括WF 6气体和SiR 4气体，SiH 2 Cl 2气体和Si 2 H 6气体中的至少一种的工艺气体，同时处理压力 在加工容器中维护。 该方法还包括通过在关闭供应之后向处理容器中提供净化气体来关闭将处理气体供应到处理容器中并从处理容器中完全除去工艺气体。 通过向已经除去工艺气体的处理容器中提供NH 3气体或MMH气体来形成WSixNy膜来渗透WSi膜。

公开(公告)号：US06489208B2

公开(公告)日：2002-12-03

申请号：US10042148

申请日：2002-01-11

申请人： Masato Koizumi ,  Kazuya Okubo ,  Tsuyoshi Takahashi ,  Tsuyoshi Hashimoto ,  Kimihiro Matsuse

发明人： Masato Koizumi ,  Kazuya Okubo ,  Tsuyoshi Takahashi ,  Tsuyoshi Hashimoto ,  Kimihiro Matsuse

IPC分类号： H01L2128

CPC分类号： H01L29/4933 ,  H01L21/28061 ,  H01L21/76889 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film on the poly-crystal silicon layer; and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.

摘要翻译： 形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层 P型杂质，在栅极膜靶的表面上，保持成膜装置中的处理对象以防止在多晶硅层上形成氧化膜的步骤; 以及向所述成膜装置供给硅化钨成膜用处理气体和P型杂质的工序，在所述多晶硅层上形成掺杂有P型杂质的杂质的硅化钨层， 不形成氧化膜。

公开(公告)号：US06251191B1

公开(公告)日：2001-06-26

申请号：US09191118

申请日：1998-11-13

申请人： Kimihiro Matsuse

发明人： Kimihiro Matsuse

IPC分类号： C23C1600

CPC分类号： H01L21/67069 ,  C23C16/54

摘要： One of the disclosed processing apparatus includes a processing vessel having an inner processing space defined by a ceiling portion, a bottom portion, and side walls and capable of being evacuated to a predetermined vacuum, a mounting table which has a first mounting surface for mounting the object thereon and a second mounting surface facing an opposite side to which the first mounting surface faces, which is supported by the ceiling portion of the processing vessel, and which extends toward the bottom portion of the processing vessel in such a way that the first and second mounting surfaces face the side walls of the processing vessel, a process gas supply mechanism, for supplying a process gas to the inner processing space, and a loading/unloading portion having an opening formed in the bottom portion of the processing vessel and an open/close device for opening/closing the opening, for loading/unloading the object into/from the processing vessel.

摘要翻译： 所公开的处理装置之一包括处理容器，该处理容器具有由顶部，底部和侧壁限定的内部处理空间，并能够抽真空至预定真空;安装台，其具有用于安装 在其上并且面对第一安装表面面对的相对侧的第二安装表面，其由处理容器的顶部支撑并且朝向处理容器的底部延伸，使得第一和 第二安装表面面对处理容器的侧壁，用于向内部处理空间供给处理气体的处理气体供给机构和具有形成在处理容器底部的开口的装载/卸载部分， 用于打开/关闭开口的/关闭装置，用于将物体装载/卸载到处理容器中。

公开(公告)号：US06251188B1

公开(公告)日：2001-06-26

申请号：US09473682

申请日：1999-12-29

申请人： Tsuyoshi Hashimoto ,  Kimihiro Matsuse ,  Kazuya Okubo ,  Tsuyoshi Takahashi

发明人： Tsuyoshi Hashimoto ,  Kimihiro Matsuse ,  Kazuya Okubo ,  Tsuyoshi Takahashi

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45561

摘要： Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer is loaded into the process chamber. Then, the first gases are supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.

摘要翻译： 在预处理中，通过将第一成膜气体提供到处理容器的处理室中，同时加热处理室以在暴露于该处理容器的处理容器的内表面上形成第一预涂膜，从而在预处理中形成预涂膜 处理室，然后将第二成膜气体供应到处理室中，以在第一预涂膜上形成第二预涂膜。 将半导体晶片装载到处理室中。 然后，在加热处理室的同时，将第一气体供给到处理室中，以在晶片上形成第一层，然后将第二气体供应到处理室中，以在第一层上形成第二层。 将硅烷气体供应到处理室中以允许硅材料沉积在堆叠在第一层上的第二层的表面上。 最后，将具有第一和第二多层膜的晶片从处理容器中卸载出来。

公开(公告)号：US06245673B1

公开(公告)日：2001-06-12

申请号：US09385848

申请日：1999-08-30

申请人： Kazuya Okubo ,  Tsuyoshi Takahashi ,  Kimiya Aoki ,  Kimihiro Matsuse

发明人： Kazuya Okubo ,  Tsuyoshi Takahashi ,  Kimiya Aoki ,  Kimihiro Matsuse

IPC分类号： H01L213205

CPC分类号： C23C16/42 ,  H01L21/28518

摘要： A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume “in terms of a phosphine gas”.

摘要翻译： 通过使用添加了含有磷原子的气体的处理气体，在物体上形成比较富硅的第一硅化钨层，在第一硅化钨层上形成比较富含钨的第二硅化钨层， 形成硅化钨膜。 含磷原子的气体相对于处理气体的添加量为“以磷化氢气体计算”为0.02体积％〜0.2体积％。