公开(公告)号：US08123873B2

公开(公告)日：2012-02-28

申请号：US12585608

申请日：2009-09-18

申请人： Koki Mizuno ,  Toshiyuki Morita

发明人： Koki Mizuno ,  Toshiyuki Morita

IPC分类号： C23C8/22 ,  C23C8/80 ,  C22C38/42 ,  C22C38/44 ,  C22C38/40

CPC分类号： C23C8/22 ,  C21D1/06 ,  C21D1/10 ,  C21D1/42 ,  C21D9/32 ,  C21D2211/003 ,  C21D2211/008 ,  C21D2211/009 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/42 ,  C22C38/44 ,  C23C8/80 ,  Y02P10/253

摘要： A method for manufacturing a carburized part that includes vacuum carburizing a steel under a reduced pressure of 2 kPa or less, so that a surface carbon concentration after slow cooling performed after carburizing falls in a range of 0.9 to 1.5%, performing the slow cooling by air cooling at such a cooling rate that causes pearlite transformation, to transform a surface structure into pearlite; and thereafter, performing induction hardening under such heating and cooling conditions that produce fine carbides in a range of up to 0.1 mm from a surface by finely dividing cementite in the pearlite structure, where the fine carbides contain 90% or more of carbides of 1 μm or less.

摘要翻译： 一种渗碳部件的制造方法，其特征在于，在2kPa以下的减压下对钢进行真空渗碳，使得渗碳后的缓慢冷却后的表面碳浓度在0.9〜1.5％的范围内，进行缓慢冷却 以使珠光体相变的冷却速度进行空气冷却，将表面结构变为珠光体; 之后，通过在珠光体组织中精细分割渗碳体，从表面形成0.1mm以下的细小碳化物的加热和冷却条件下进行感应淬火，其中细小碳化物含有90％以上的碳化物1μm 或更少。

公开(公告)号：US20100084051A1

公开(公告)日：2010-04-08

申请号：US12585608

申请日：2009-09-18

申请人： Koki Mizuno ,  Toshiyuki Morita

发明人： Koki Mizuno ,  Toshiyuki Morita

IPC分类号： C23C8/22 ,  C23C8/80 ,  C22C38/42 ,  C22C38/44 ,  C22C38/40

CPC分类号： C23C8/22 ,  C21D1/06 ,  C21D1/10 ,  C21D1/42 ,  C21D9/32 ,  C21D2211/003 ,  C21D2211/008 ,  C21D2211/009 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/42 ,  C22C38/44 ,  C23C8/80 ,  Y02P10/253

摘要： A method for manufacturing a carburized part that includes vacuum carburizing a steel under a reduced pressure of 2 kPa or less, so that a surface carbon concentration after slow cooling performed after carburizing falls in a range of 0.9 to 1.5%, performing the slow cooling by air cooling at such a cooling rate that causes pearlite transformation, to transform a surface structure into pearlite; and thereafter, performing induction hardening under such heating and cooling conditions that produce fine carbides in a range of up to 0.1 mm from a surface by finely dividing cementite in the pearlite structure, where the fine carbides contain 90% or more of carbides of 1 μm or less.

摘要翻译： 一种渗碳部件的制造方法，其特征在于，在2kPa以下的减压下对钢进行真空渗碳，使得渗碳后的缓慢冷却后的表面碳浓度在0.9〜1.5％的范围内，进行缓慢冷却 以使珠光体相变的冷却速度进行空气冷却，将表面结构变为珠光体; 之后，通过在珠光体组织中精细分割渗碳体，从表面形成0.1mm以下的细小碳化物的加热和冷却条件下进行感应淬火，其中细小碳化物含有90％以上的碳化物1μm 或更少。

公开(公告)号：US07988796B2

公开(公告)日：2011-08-02

申请号：US11976646

申请日：2007-10-26

申请人： Kouji Ohbayashi ,  Kazuaki Okada ,  Taro Matsukawa ,  Yutaka Eto ,  Koki Mizuno ,  Kazumichi Tsukuda

发明人： Kouji Ohbayashi ,  Kazuaki Okada ,  Taro Matsukawa ,  Yutaka Eto ,  Koki Mizuno ,  Kazumichi Tsukuda

IPC分类号： C23C8/00 ,  B21K1/42

CPC分类号： C23C8/22 ,  B23P15/00 ,  C21D1/00 ,  C21D1/84 ,  C23C8/80 ,  F16H55/56 ,  Y10T29/49456

摘要： A method of manufacturing a sheave member for a belt-type continuously variable transmission includes a forming step wherein an intermediate product having a sheave surface is formed by forging a steel material; a carburization step wherein the intermediate product is heated in a carburization gas; a gradual cooling step wherein the cooling speed is equal to or less than 20° C./sec, at least until the temperature of the intermediate product has passed through the transformation point; a high-frequency electrical heating step wherein a selected portion(s) of the intermediate product is heated; a water quenching step wherein the selected portion is quenched by contact with water; and a finishing step wherein a grinding process is applied to the intermediate product to attain the final shape. In the cooling step, preferably, the intermediate product is contacted with a cooling gas at a pressure lower than atmospheric pressure.

摘要翻译： 一种制造带式无级变速器的滑轮构件的方法包括：形成步骤，其中通过锻造钢材形成具有滑轮表面的中间产品; 渗碳步骤，其中所述中间产物在渗碳气中加热; 至少直到中间产品的温度通过相变点为止，其中冷却速度等于或小于20℃/秒的逐渐冷却步骤; 高频电加热步骤，其中加热所述中间产物的选定部分; 水淬步骤，其中所选择的部分通过与水接触来淬火; 以及精加工步骤，其中将研磨工艺施加到中间产品以获得最终形状。 在冷却步骤中，优选地，中间产物在低于大气压的压力下与冷却气体接触。

公开(公告)号：US06194236B1

公开(公告)日：2001-02-27

申请号：US09247908

申请日：1999-02-11

申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Yukihiko Tanizawa ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Yukihiko Tanizawa ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

IPC分类号： H01L2166

CPC分类号： G01L9/0042 ,  H01L29/84 ,  Y10S438/977

摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.

摘要翻译： 公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。 容器中充满KOH溶液。 在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。 在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。 控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加 部分。 在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

公开(公告)号：US5770883A

公开(公告)日：1998-06-23

申请号：US715731

申请日：1996-09-19

申请人： Koki Mizuno ,  Hiroshi Okada ,  Inao Toyoda ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Kenichi Yokoyama

发明人： Koki Mizuno ,  Hiroshi Okada ,  Inao Toyoda ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Kenichi Yokoyama

IPC分类号： G01L9/00 ,  G01L9/06 ,  H01L27/02 ,  H01L29/82

CPC分类号： G01L9/06 ,  G01L9/0042 ,  G01L9/0054 ,  H01L27/0203

摘要： A pair of signal voltages outputted from a bridge circuit composed of plural strain gauges are linearly amplified individually by a pair of amplifiers, whereupon a difference between the pair of signal voltages is detected. The pair of amplifiers are formed respectively in regions that are symmetrical with each other on a chip. As a result, variations in the output characteristics between the amplifiers are decreased.

摘要翻译： 从由多个应变仪组成的桥式电路输出的一对信号电压被一对放大器单独线性地放大，从而检测一对信号电压之间的差。 一对放大器分别形成在芯片上彼此对称的区域中。 结果，放大器之间的输出特性的变化减小。

公开(公告)号：US5354412A

公开(公告)日：1994-10-11

申请号：US943416

申请日：1992-09-11

申请人： Yasutoshi Suzuki ,  Koki Mizuno

发明人： Yasutoshi Suzuki ,  Koki Mizuno

IPC分类号： H01L21/20 ,  C30B25/02 ,  H01L21/205 ,  H01L29/80 ,  H01L43/06 ,  C30B23/02

CPC分类号： H01L21/02463 ,  C30B25/02 ,  C30B29/42 ,  H01L21/02381 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A process for epitaxially growing a compound semiconductor layer containing at least arsenic on a single crystal silicon substrate, which prevents the silicon impurity from intruding said compound semiconductor layer. The process comprises supplying one of the starting material gas, ASH.sub.3, into the reaction furnace to effect growth, but in such a manner that the AsH.sub.3 gas is pyrolyzed in advance to thereby supply arsenic alone either in an atomic or a molecular state. The GaAs layer is thus epitaxially grown on a single crystal silicon substrate in the crystal growing chamber, i.e., the reaction furnace in the apparatus, under an atmosphere comprising atomic or molecular arsenic at a temperature in the range of from 400.degree. to 650.degree. C. and at a vacuum degree of about 0.1 Pa. By thus epitaxially growing GaAs layer under an atmosphere comprising atomic or molecular arsenic, the intrusion of silicon impurity into the GaAs layer during its growth can be effectively prevented. Furthermore, an undoped GaAs layer, a p-GaAs layer, and an n-GaAs layer in this order can be deposited on the silicon substrate consecutively by using carbon (C) as a p-type dopant which can be supplied from trimethylgallium, thereby realizing a steep step-like junction at the n-GaAs/p-GaAs interface.

摘要翻译： 一种用于在单晶硅衬底上外延生长至少包含砷的化合物半导体层的方法，其防止硅杂质侵入所述化合物半导体层。 该方法包括将一种起始原料气体ASH3供入反应炉中以实现生长，但是以使得AsH 3气体预先热解，从而以原子或分子状态单独供应砷。 因此GaAs层在晶体生长室中的单晶硅衬底上外延生长，即在包含原子或分子砷的气氛中在400至650℃范围内的装置中的反应炉 并且在约0.1Pa的真空度下，通过在包含原子或分子砷的气氛下外延生长GaAs层，可以有效地防止硅杂质在其生长期间侵入GaAs层。 此外，可以通过使用碳（C）作为可由三甲基镓提供的p型掺杂剂，连续地在硅衬底上沉积未掺杂的GaAs层，p-GaAs层和n-GaAs层，由此 在n-GaAs / p-GaAs界面实现陡峭的阶梯状结。