公开(公告)号：US06194236B1

公开(公告)日：2001-02-27

申请号：US09247908

申请日：1999-02-11

申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Yukihiko Tanizawa ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Yukihiko Tanizawa ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

IPC分类号： H01L2166

CPC分类号： G01L9/0042 ,  H01L29/84 ,  Y10S438/977

摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.

摘要翻译： 公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。 容器中充满KOH溶液。 在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。 在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。 控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加 部分。 在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

公开(公告)号：US5949118A

公开(公告)日：1999-09-07

申请号：US637128

申请日：1996-04-24

申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

IPC分类号： G01L9/00 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01L9/0042 ,  H01L29/84 ,  Y10S438/977

摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.

摘要翻译： 公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。 容器中充满KOH溶液。 在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。 在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。 控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加 部分。 在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

公开(公告)号：US5920106A

公开(公告)日：1999-07-06

申请号：US987500

申请日：1997-12-09

申请人： Nobukazu Oba ,  Toshio Ikuta ,  Minekazu Sakai ,  Tsuyoshi Fukada ,  Yasutoshi Suzuki

发明人： Nobukazu Oba ,  Toshio Ikuta ,  Minekazu Sakai ,  Tsuyoshi Fukada ,  Yasutoshi Suzuki

IPC分类号： G01L9/04 ,  B81B3/00 ,  G01L9/00 ,  H01L29/84

CPC分类号： G01L9/0042

摘要： A semiconductor pressure detection device includes a diaphragm formed at a portion of a P- conductivity type semiconductor substrate having a reduced thickness. Gauge resistors are formed on the surface of an N- conductivity type semiconductor layer formed on the substrate. An N+ conductivity type diffusion layer is formed in the N- conductivity type semiconductor layer to fix the electric potential of the N- conductivity type layer. The first conductivity type area surrounds the diaphragm. Therefore, when the N- conductivity type area is supplied with electric potential, the potential gradient in the N- conductivity type layer is small. Thus, the leakage current which flows to a pn junction between the gauge resistors and the N- conductivity type area is reduced.

摘要翻译： 半导体压力检测装置包括形成在具有减小的厚度的P-导电型半导体衬底的部分处的膜片。 在基板上形成的N-导电型半导体层的表面上形成有规格电阻。 在N导电型半导体层中形成N +导电型扩散层，以固定N-导电型层的电位。 第一导电类型区域围绕隔膜。 因此，当N-导电类型区域被提供电位时，N-导电类型层中的电位梯度小。 因此，流向量规电阻器与N-导电型区域之间的pn结的漏电流减小。

公开(公告)号：US5770883A

公开(公告)日：1998-06-23

申请号：US715731

申请日：1996-09-19

申请人： Koki Mizuno ,  Hiroshi Okada ,  Inao Toyoda ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Kenichi Yokoyama

发明人： Koki Mizuno ,  Hiroshi Okada ,  Inao Toyoda ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Kenichi Yokoyama

IPC分类号： G01L9/00 ,  G01L9/06 ,  H01L27/02 ,  H01L29/82

CPC分类号： G01L9/06 ,  G01L9/0042 ,  G01L9/0054 ,  H01L27/0203

摘要： A pair of signal voltages outputted from a bridge circuit composed of plural strain gauges are linearly amplified individually by a pair of amplifiers, whereupon a difference between the pair of signal voltages is detected. The pair of amplifiers are formed respectively in regions that are symmetrical with each other on a chip. As a result, variations in the output characteristics between the amplifiers are decreased.

摘要翻译： 从由多个应变仪组成的桥式电路输出的一对信号电压被一对放大器单独线性地放大，从而检测一对信号电压之间的差。 一对放大器分别形成在芯片上彼此对称的区域中。 结果，放大器之间的输出特性的变化减小。

公开(公告)号：US06595065B2

公开(公告)日：2003-07-22

申请号：US09492605

申请日：2000-01-27

申请人： Yukihiko Tanizawa ,  Kazuaki Hamamoto ,  Inao Toyoda ,  Hiroaki Tanaka ,  Yasutoshi Suzuki

发明人： Yukihiko Tanizawa ,  Kazuaki Hamamoto ,  Inao Toyoda ,  Hiroaki Tanaka ,  Yasutoshi Suzuki

IPC分类号： G01L904

CPC分类号： G01L9/0055

摘要： A pressure detecting apparatus has a single-crystal semiconductor sensor chip disposed on a metallic diaphragm through a low melting point glass. The sensor chip has a planar shape selected from a circular shape, a first polygonal shape having more than five sides and having interior angles all less than 180°, and a second polygonal shape having a ratio of a circumscribed circle diameter relative to an inscribed circle diameter being less than 1.2. Four strain gauge resistors are disposed on X, Y axes passing through a center point O of the sensor chip in parallel with directions. Accordingly, thermal stress is reduced not to adversely affect a detection error and simultaneously high sensitivity is provided.

摘要翻译： 压力检测装置具有通过低熔点玻璃设置在金属隔膜上的单晶半导体传感器芯片。 传感器芯片具有选自圆形，多于五边的第一多边形和内角全部小于180°的平面形状，以及具有相对于内切圆的外接圆直径的比率的第二多边形 直径小于1.2。 四个应变计电阻器设置在X，Y轴上，与<110>方向平行地穿过传感器芯片的中心点O。 因此，热应力降低，不会不利地影响检测误差，同时提供高灵敏度。

公开(公告)号：US06422088B1

公开(公告)日：2002-07-23

申请号：US09666085

申请日：2000-09-21

申请人： Nobukazu Oba ,  Yoshifumi Murakami ,  Yukihiko Tanizawa ,  Hiroaki Tanaka ,  Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Nobukazu Oba ,  Yoshifumi Murakami ,  Yukihiko Tanizawa ,  Hiroaki Tanaka ,  Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01L900

CPC分类号： G01L27/007 ,  G01D3/08 ,  G01L9/0054 ,  G01L9/02 ,  G01R17/10

摘要： A reference voltage generating circuit is constituted by resistors RE and RF each having a resistance not influenced by an application of pressure. The reference voltage generating circuit is connected between one and the other ends of a bridge circuit. A failure judgement of the bridge circuit is performed based on a comparison of a voltage difference VBC between two midpoints B and C of the bridge circuit and voltage differences VCE and VBE between a reference voltage level of the reference voltage generating circuit and the voltage levels of two midpoints B and C.

摘要翻译： 参考电压发生电路由电阻器RE和RF构成，每个电阻器不受施加压力的影响。 参考电压产生电路连接在桥接电路的一端和另一端之间。 基于桥电路的两个中点B和C之间的电压差VBC与参考电压产生电路的参考电压电平之间的电压差VCE和VBE的比较，执行桥电路的故障判断， 两个中点B和C.

公开(公告)号：US07197939B2

公开(公告)日：2007-04-03

申请号：US11046792

申请日：2005-02-01

申请人： Minekazu Sakai ,  Yasutoshi Suzuki

发明人： Minekazu Sakai ,  Yasutoshi Suzuki

IPC分类号： G01L21/12 ,  G01L9/00

CPC分类号： G01L9/0054 ,  G01L19/0627 ,  G01L19/0636

摘要： A pressure sensor includes a semiconductor substrate and a pedestal member such as a glass pedestal. The semiconductor substrate has a diaphragm for detecting a pressure and a thick portion positioned around the diaphragm. The pedestal member has one surface bonded to the thick portion of the semiconductor substrate and the other surface opposite to the one surface. In the pressure sensor, the pedestal member has a through hole through which pressure is introduced to the diaphragm. The through hole penetrates through the pedestal member from an opening of the other surface to the one surface of the pedestal member, and the through hole has a hole diameter that becomes smaller from the one surface toward the other surface of the pedestal member. Accordingly, it can effectively restrict foreign materials such as dusts from being introduced into the through hole of the pressure sensor.

摘要翻译： 压力传感器包括半导体基板和诸如玻璃基座的基座构件。 半导体衬底具有用于检测压力的膜片和位于膜片周围的厚壁部分。 基座构件具有一个表面，其结合到半导体衬底的厚部分，另一个表面与该表面相对。 在压力传感器中，基座构件具有通向该隔膜的压力的通孔。 通孔从另一个表面的开口穿过基座构件到基座构件的一个表面，并且通孔具有从基座构件的一个表面朝向另一个表面变小的孔直径。 因此，能够有效地将诸如灰尘的异物引入压力传感器的通孔中。

公开(公告)号：US06199430B1

公开(公告)日：2001-03-13

申请号：US09241137

申请日：1999-02-02

申请人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

发明人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

IPC分类号： G01P15125

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/135 ,  G01P15/18 ,  G01P2015/0817 ,  G01P2015/0828 ,  G01V1/181 ,  H01H1/0036

摘要： An acceleration sensor has a ring-shaped movable electrode connected to an anchor part via beams and a fixed electrode facing the ring-shaped movable electrode defining a specific interval, which are disposed on a substrate. The movable electrode is displaced by acceleration approximately in parallel to the substrate and contacts the fixed electrode, so that the acceleration is detected. The fixed electrode is divided into a detecting fixed electrode for contacting the movable electrode and a sensitivity controlling fixed electrode insulated from the detecting fixed electrode. Accordingly, potential differences between the movable electrode and the detecting fixed electrode and between the movable electrode and the sensitivity controlling fixed electrode are independently controlled to control sensitivity of acceleration.

摘要翻译： 加速度传感器具有环形可动电极，其经由梁和固定电极连接到锚定部分，固定电极面向限定特定间隔的环形可动电极，该固定电极设置在基板上。 可移动电极通过与基板大致平行的加速移位，并与固定电极接触，从而检测加速度。 固定电极被分成用于接触可动电极的检测固定电极和与检测固定电极绝缘的灵敏度控制固定电极。 因此，独立地控制可动电极和检测用固定电极之间以及可动电极与灵敏度控制固定电极之间的电位差，以控制加速度的灵敏度。

公开(公告)号：US20050172724A1

公开(公告)日：2005-08-11

申请号：US11046792

申请日：2005-02-01

申请人： Minekazu Sakai ,  Yasutoshi Suzuki

发明人： Minekazu Sakai ,  Yasutoshi Suzuki

IPC分类号： G01L9/00 ,  G01L9/06 ,  G01L19/00 ,  G01L19/06 ,  H01L29/84

CPC分类号： G01L9/0054 ,  G01L19/0627 ,  G01L19/0636

摘要： A pressure sensor includes a semiconductor substrate and a pedestal member such as a glass pedestal. The semiconductor substrate has a diaphragm for detecting a pressure and a thick portion positioned around the diaphragm. The pedestal member has one surface bonded to the thick portion of the semiconductor substrate and the other surface opposite to the one surface. In the pressure sensor, the pedestal member has a through hole through which pressure is introduced to the diaphragm. The through hole penetrates through the pedestal member from an opening of the other surface to the one surface of the pedestal member, and the through hole has a hole diameter that becomes smaller from the one surface toward the other surface of the pedestal member. Accordingly, it can effectively restrict foreign materials such as dusts from being introduced into the through hole of the pressure sensor.

摘要翻译： 压力传感器包括半导体基板和诸如玻璃基座的基座构件。 半导体衬底具有用于检测压力的膜片和位于膜片周围的厚壁部分。 基座构件具有一个表面，其结合到半导体衬底的厚部分，另一个表面与该表面相对。 在压力传感器中，基座构件具有通向该隔膜的压力的通孔。 通孔从另一个表面的开口穿过基座构件到基座构件的一个表面，并且通孔具有从基座构件的一个表面朝向另一个表面变小的孔直径。 因此，能够有效地将诸如灰尘的异物引入压力传感器的通孔中。

公开(公告)号：US06169316A

公开(公告)日：2001-01-02

申请号：US09287012

申请日：1999-04-06

申请人： Minekazu Sakai ,  Yasutoshi Suzuki

发明人： Minekazu Sakai ,  Yasutoshi Suzuki

IPC分类号： H01L2982

CPC分类号： G01L19/146 ,  G01L19/147

摘要： In a semiconductor pressure sensor, adhesive having a Young's modulus of equal to or less than 1×104 Pa such as silicone system gel is disposed between a bottom wall of a casing and a bottom wall of a sensor chip, and a space between side walls of the sensor chip and side walls of the casing is filled with adhesive having a Young's modulus of equal to or larger than 1×104 Pa, such as silicone system adhesive or epoxy system adhesive. Accordingly, temperature characteristics of the sensor chip can be improved without causing pressure leakage.

摘要翻译： 在半导体压力传感器中，在壳体的底壁和传感器芯片的底壁之间设置有等于或小于1×10 4 Pa的杨氏模量的粘合剂，例如硅酮体系凝胶，并且在侧壁之间的空间 传感器芯片和壳体的侧壁填充有杨氏模量等于或大于1×10 4 Pa的粘合剂，例如硅氧烷系粘合剂或环氧树脂体系粘合剂。 因此，可以提高传感器芯片的温度特性，而不会引起压力泄漏。