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    Semiconductor device, method for manufacturing semiconductor device, and electronic appliance
    12.
    发明授权
    Semiconductor device, method for manufacturing semiconductor device, and electronic appliance 有权
    半导体装置，半导体装置的制造方法以及电子设备

    公开(公告)号：US08426945B2

    公开(公告)日：2013-04-23

    申请号：US13225752

    申请日：2011-09-06

    申请人： Masaharu Nagai ,  Takafumi Mizoguchi

    发明人： Masaharu Nagai ,  Takafumi Mizoguchi

    IPC分类号： H01L29/06

    CPC分类号： H01L29/78648 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

    摘要： To provide a semiconductor device in which a channel formation region can be thinned without adversely affecting a source region and a drain region through a simple process and a method for manufacturing the semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film, having a thickness smaller than a height of a projection of a substrate, is formed over a surface of the substrate having the projections; the semiconductor film is etched to have an island shape with a resist used as a mask; the resist is etched to expose a portion of the semiconductor film which covers a top surface of the projection; and the exposed portion of the semiconductor film is etched to be thin, while the adjacent portions of the semiconductor film on both sides of the projection remain covered with the resist.

    摘要翻译： 为了提供一种半导体器件，其中可以通过简单的工艺减少沟道形成区域而不会不利地影响源极区域和漏极区域，以及制造半导体器件的方法。 在半导体装置的制造方法中，在具有突起的基板的表面上形成厚度小于基板突起的高度的半导体膜， 蚀刻半导体膜以具有岛状，其中抗蚀剂用作掩模; 蚀刻抗蚀剂以暴露覆盖突起的顶表面的半导体膜的一部分; 并且半导体膜的暴露部分被蚀刻为薄，同时半导体膜在投影两侧的相邻部分保持被抗蚀剂覆盖。

    Method for manufacturing SOI substrate
    13.
    发明授权
    Method for manufacturing SOI substrate 有权
    制造SOI衬底的方法

    公开(公告)号：US08198173B2

    公开(公告)日：2012-06-12

    申请号：US12910320

    申请日：2010-10-22

    申请人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

    发明人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

    IPC分类号： H01L21/46

    CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/66772 ,  H01L29/78621

    摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.

    摘要翻译： 即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮 在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。 此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。 可以在施加偏置电压的状态下进行等离子体处理。

    Display Device and Method for Manufacturing the Same
    14.
    发明申请
    Display Device and Method for Manufacturing the Same 有权
    显示装置及其制造方法

    公开(公告)号：US20110248313A1

    公开(公告)日：2011-10-13

    申请号：US13088578

    申请日：2011-04-18

    申请人： Kaoru Tsuchiya ,  Aya Anzai ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda

    发明人： Kaoru Tsuchiya ,  Aya Anzai ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda

    IPC分类号： H01L33/52

    CPC分类号： H01L33/52 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/5246 ,  H01L2251/5323 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.

    摘要翻译： 本发明的目的是提供一种这样的密封结构，即在使用有机或无机电致发光元件的显示器中，可以获得防止外部和水中的劣化因素等水分或氧气的材料进入的可靠性的密封结构。 鉴于上述目的，着眼于层间绝缘膜的磁导率，抑制了电致发光元件的劣化，并且通过防止水从本发明的层间绝缘膜进入而获得足够的可靠性。

    Method for removing resist pattern and method for manufacturing semiconductor device
    15.
    发明授权
    Method for removing resist pattern and method for manufacturing semiconductor device 有权
    去除抗蚀剂图案的方法和制造半导体器件的方法

    公开(公告)号：US07875419B2

    公开(公告)日：2011-01-25

    申请号：US10694986

    申请日：2003-10-29

    申请人： Masaharu Nagai ,  Kiyofumi Ogino ,  Teruhisa Nakai ,  Eiji Shioda

    发明人： Masaharu Nagai ,  Kiyofumi Ogino ,  Teruhisa Nakai ,  Eiji Shioda

    IPC分类号： G03F7/42 ,  H01L21/027

    CPC分类号： H01L27/1288 ,  G03F7/022 ,  G03F7/2024 ,  G03F7/425 ,  H01L21/31138 ,  H01L21/32136 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621

    摘要： It is an object to provide a technique for removing a resist favorably without leaving residue in the case of using a nonaqueous resist stripper. According to the present invention, in order to achieve the object, when a resist pattern is removed by using the nonaqueous resist stripper, it becomes easier to remove the resist pattern after dry etching or ion doping, by performing exposure treatment on the resist pattern. After a resist pattern is formed from a DNQ-novolac resin type of positive resist composition, the resist pattern is irradiated with light within the range of photosensitive wavelength of the DNQ photosensitizer, thereby removing the resist pattern with the nonaqueous resist stripper.

    摘要翻译： 本发明的目的是提供一种在使用非水性抗蚀剂剥离剂的情况下有利地除去抗蚀剂而不留下残留物的技术。 根据本发明，为了达到上述目的，通过使用非水性抗蚀剂剥离剂去除抗蚀剂图案，通过对抗蚀剂图案进行曝光处理，变得更容易在干蚀刻或离子掺杂之后去除抗蚀剂图案。 在由DNQ-酚醛清漆树脂型正性抗蚀剂组合物形成抗蚀剂图案之后，用DNQ光敏剂的感光波长范围内的光照射抗蚀剂图案，从而用非水性抗蚀剂剥离剂去除抗蚀剂图案。

    Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same
    19.
    发明授权
    Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same 失效
    具有含有碱金属杂质的II-VI族半导体接触层的半导体发光器件及其制造方法以及包括其的光学器件

    公开(公告)号：US06414975B1

    公开(公告)日：2002-07-02

    申请号：US09048048

    申请日：1998-03-26

    申请人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

    发明人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

    IPC分类号： H01S500

    CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L33/285

    摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.

    摘要翻译： 本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。 在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。 然后在其上形成Na 2 Se的碱性化合物层。 随后，通过照射准分子激光束进行热处理，使得第二半导体层的至少一部分和碱性化合物层的至少一部分被改变，从而形成接触层。 此外，在接触层上形成p侧电极。 接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。 由于操作功率的降低，设备寿命得到改善。

    Semiconductor device, method for manufacturing semiconductor device, and electronic appliance
    20.
    发明授权
    Semiconductor device, method for manufacturing semiconductor device, and electronic appliance 有权
    半导体装置，半导体装置的制造方法以及电子设备

    公开(公告)号：US08034674B2

    公开(公告)日：2011-10-11

    申请号：US12163227

    申请日：2008-06-27

    申请人： Masaharu Nagai ,  Takafumi Mizoguchi

    发明人： Masaharu Nagai ,  Takafumi Mizoguchi

    IPC分类号： H01L21/00

    CPC分类号： H01L29/78648 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

    摘要： To provide a semiconductor device in which a channel formation region can be thinned without adversely affecting a source region and a drain region through a simple process and a method for manufacturing the semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film, having a thickness smaller than a height of a projection of a substrate, is formed over a surface of the substrate having the projections; the semiconductor film is etched to have an island shape with a resist used as a mask; the resist is etched to expose a portion of the semiconductor film which covers a top surface of the projection; and the exposed portion of the semiconductor film is etched to be thin, while the adjacent portions of the semiconductor film on both sides of the projection remain covered with the resist.

    摘要翻译： 为了提供一种半导体器件，其中可以通过简单的工艺减少沟道形成区域而不会不利地影响源极区域和漏极区域，以及制造半导体器件的方法。 在半导体装置的制造方法中，在具有突起的基板的表面上形成厚度小于基板突起的高度的半导体膜， 蚀刻半导体膜以具有岛状，其中抗蚀剂用作掩模; 蚀刻抗蚀剂以暴露覆盖突起的顶表面的半导体膜的一部分; 并且半导体膜的暴露部分被蚀刻为薄，同时半导体膜在投影两侧的相邻部分保持被抗蚀剂覆盖。