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公开(公告)号：US06522424B1
公开(公告)日：2003-02-18
申请号：US09247567
申请日：1999-02-10
IPC分类号： G06F1200
CPC分类号： H04N1/00236 , H04N1/00241 , H04N1/32358 , H04N2201/0025 , H04N2201/33385
摘要： An image data transfer system and method enable scan time and transfer time of the image data to be adjusted appropriately without lacking a part of the image data, suitable for low price. A data segmentation device segments the image data from a scan device into high order n bits and low order (N−n) bits, subsequently, transferring the high order n bits toward a data transfer device at the same time when the scan device scans a manuscript, and transferring the low order (N−n) bits toward a memory device. The data transfer device transfers the high order n bits of the image data toward a personal computer at the same time when the scan device scans the manuscript. The memory device stores therein the low order (N−n) bits of the image data temporarily. Furthermore, the data transfer device scans the low order (N−n) bits of the image data from the memory device to transfer toward the personal computer after transfer of the high order n bits.
摘要翻译： 图像数据传送系统和方法使得能够适当地调整图像数据的扫描时间和传送时间，而不缺少适合于低价格的图像数据的一部分。 数据分割设备将来自扫描设备的图像数据分割成高阶n位和低位（Nn）位，随后在扫描设备扫描原稿的同时向数据传送设备传送高阶n位， 以及向存储器件传送低阶（Nn）位。 在扫描装置扫描原稿的同时，数据传送装置将图像数据的高阶n位传送给个人计算机。 存储器件临时存储图像数据的低阶（N-n）位。 此外，数据传送装置从存储装置扫描图像数据的低阶（N-n）位，以便在传送高阶n位之后向个人计算机传送。
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公开(公告)号：US20110096383A1
公开(公告)日：2011-04-28
申请号：US12999392
申请日：2009-06-11
IPC分类号： G02B26/10
CPC分类号： H04N9/317 , G02B26/10 , H04N9/3129
摘要： The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object. In the light beam scanning image projection apparatus including a plurality of light sources which emit the light beams of respectively different wavelengths, a driving section which modulates the intensity of each light beam in accordance with the image signal, the light axis alignment means which aligns the light axes of each light beam, and scanning means which scans the light beams, the light axis alignment means includes: a plurality of optical elements; and an adjusting section which adjusts at least one of a position and a gradient of at least one of the optical elements, and the light beam scanning image projection apparatus further includes: detecting means which detects a shift between a spot center of each light beam and a center reference point; and position correction means which controls the adjusting section based on a detection result in the detecting means to adjust at least one of the position and the gradient of at least one of the optical elements of the light axis alignment means, thereby aligning the light axes of each light beam.
摘要翻译： 本申请中包括的本发明的目的是即使当由于更换光源等而导致投影图像的图像质量劣化时，也能够自动防止图像的劣化。 以下光束扫描图像投影装置是实现该目的的一种手段。 在包括发射分别不同波长的光束的多个光源的光束扫描图像投影装置中，根据图像信号调制每个光束的强度的驱动部分，将对准该光束的光轴对准装置 每个光束的光轴和扫描光束的扫描装置，光轴对准装置包括：多个光学元件; 以及调整部，其调整至少一个所述光学元件的位置和倾斜度中的至少一个，并且所述光束扫描图像投影装置还包括：检测装置，其检测每个光束的光点中心与 中心参考点 以及位置校正装置，其基于检测装置中的检测结果来控制调节部分，以调整光轴对准装置的至少一个光学元件的位置和梯度中的至少一个，从而使光轴对准装置的光轴 每个光束。
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公开(公告)号：US07223993B2
公开(公告)日：2007-05-29
申请号：US11210760
申请日：2005-08-25
申请人： Kouji Nakahara , Makoto Kudo , Shigehisa Tanaka , Masataka Shirai
发明人： Kouji Nakahara , Makoto Kudo , Shigehisa Tanaka , Masataka Shirai
IPC分类号： H01L29/06
CPC分类号： H01S5/34313 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , H01S5/0265 , H01S5/0287 , H01S5/12 , H01S5/1221 , H01S5/227 , H01S5/305 , H01S5/3054 , H01S5/3406 , H01S5/34306 , H01S5/34366 , Y10S438/962
摘要： In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ΔEc and ΔEv, have been unable to be adjusted independently.This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer 3, an MQW layer 4, a p-type InGaAlAs-GRIN-SCH layer 5, a p-type InAlAs electron-stopping layer 6, and others, in that order, on an n-type InP wafer 1; wherein the MQW layer 4 includes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier layers each having strain of an opposite sign to the strain applied to the quantum well layers.
摘要翻译： 在包括应变量子阱层作为有源层的半导体激光器或电吸收光学调制器中，由于带结构，特别是DeltaEc和DeltaEv已经不能独立地调整，所以使激光特性或调制器特性足够的已经看到相应的限制。 本发明通过将n型InGaAlAs-GRIN-SCH层3，MQW层4，p型InGaAlAs-GRIN-SCH层5，p型InAlAs电子停止层6等层叠而构成 在n型InP晶片1上的顺序; 其中MQW层4包括InGaAlAs应变的量子阱层和InGaAlAsSb形成的阻挡层，每个具有与施加到量子阱层的应变相反的符号的应变。
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公开(公告)号：US06958831B1
公开(公告)日：2005-10-25
申请号：US09399284
申请日：1999-09-17
申请人： Kouji Nakahara
发明人： Kouji Nakahara
CPC分类号： H04N1/0402
摘要： At a conventional image scanning method, it takes long time to transfer an image data of whole image, consequently it takes long time to display the whole image on a display. Therefore, an image scanning method and an apparatus thereof, with which a user can recognize mistakes at reading a document at earlier time, are provided. By one time scanning, an image data whose resolution is lower than fundamental resolution is read. The image data of lower resolution is obtained by that the image data are thinned out. And this image data having lower resolution is displayed on a display as a preview image. By rescanning, an image whose resolution is higher than the preview image is read and displayed. This preview image can be displayed in short time, therefore the user can recognize a mistake at earlier time.
摘要翻译： 在传统的图像扫描方法中，传输整个图像的图像数据需要很长时间，因此在显示器上显示整个图像需要很长时间。 因此，提供了一种图像扫描方法及其装置，用户可以在早期读取文档时识别错误。 一次扫描，读取分辨率低于基本分辨率的图像数据。 通过减少图像数据，获得较低分辨率的图像数据。 并且具有较低分辨率的该图像数据作为预览图像显示在显示器上。 通过重新扫描，读取并显示分辨率高于预览图像的图像。 该预览图像可以在短时间内显示，因此用户可以在较早时间识别出错误。
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公开(公告)号：US20050207463A1
公开(公告)日：2005-09-22
申请号：US11130150
申请日：2005-05-17
申请人： Etsuko Nomoto , Kouji Nakahara , Shinji Tsuji , Makoto Shimaoka
发明人： Etsuko Nomoto , Kouji Nakahara , Shinji Tsuji , Makoto Shimaoka
CPC分类号： H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/3201
摘要： The present invention provides a highly reliable ridge-waveguide semiconductor laser diode and an optical module. The p-side electrode of the ridge-waveguide laser diode has a first conductor layer region and a second conductor layer region formed on the first conductor layer region. At least one of facets of the second conductor layer region is recessed inward from a reflection facet. Thus, the ridge-waveguide semiconductor laser diode has a structure in which strain which is caused by the electrode stress to be applied on the diode facet is reduced and the saturable absorption does not occur. The ridge-waveguide semiconductor laser diode thus obtained is highly reliable, and the optical module using the same is remarkably high in reliability.
摘要翻译： 本发明提供了一种高度可靠的脊 - 波导半导体激光二极管和光学模块。 脊波导激光二极管的p侧电极具有形成在第一导体层区域上的第一导体层区域和第二导体层区域。 第二导体层区域的至少一个面从反射面向内凹入。 因此，脊 - 波导半导体激光二极管具有这样的结构，其中由施加在二极管面上的电极应力引起的应变减小，并且不发生饱和吸收。 由此获得的脊 - 波导半导体激光二极管是可靠的，并且使用它的光学模块的可靠性非常高。
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公开(公告)号：US06931039B2
公开(公告)日：2005-08-16
申请号：US10412425
申请日：2003-04-14
申请人： Kouji Nakahara , Ryoji Takeyari
发明人： Kouji Nakahara , Ryoji Takeyari
CPC分类号： H01S5/041 , H01S5/026 , H01S5/042 , H01S5/0427 , H01S5/2224 , H01S5/2275
摘要： Optical transmitter equipment and a semiconductor laser device are provided. In one example, optical transmitter equipment includes a semiconductor laser driven by a direct-modulated method. The optical transmitter equipment comprises at least a semiconductor laser, the semiconductor laser having an active layer for laser oscillation and a clad region for optical confinement; an emission device capable of supplying optical energy to the active layer in the semiconductor laser; and a drive circuit for the semiconductor laser. The emission device is configured to supply optical energy corresponding to a bias current in the semiconductor laser to the active layer in the semiconductor laser.
摘要翻译： 提供光发射机设备和半导体激光器件。 在一个示例中，光发射机设备包括由直接调制方法驱动的半导体激光器。 所述光发射机设备至少包括半导体激光器，所述半导体激光器具有用于激光振荡的有源层和用于光学限制的包层区域; 能够向半导体激光器中的有源层提供光能的发射器件; 以及用于半导体激光器的驱动电路。 发射装置被配置为将与半导体激光器中的偏置电流相对应的光能量提供给半导体激光器中的有源层。
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公开(公告)号：US20070051939A1
公开(公告)日：2007-03-08
申请号：US11210760
申请日：2005-08-25
申请人： Kouji Nakahara , Makoto Kudo , Shigehisa Tanaka , Masataka Shirai
发明人： Kouji Nakahara , Makoto Kudo , Shigehisa Tanaka , Masataka Shirai
IPC分类号： H01L31/00
CPC分类号： H01S5/34313 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , H01S5/0265 , H01S5/0287 , H01S5/12 , H01S5/1221 , H01S5/227 , H01S5/305 , H01S5/3054 , H01S5/3406 , H01S5/34306 , H01S5/34366 , Y10S438/962
摘要： In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ΔEc and ΔEv, have been unable to be adjusted independently. This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer 3, an MQW layer 4, a p-type InGaAlAs-GRIN-SCH layer 5, a p-type InAlAs electron-stopping layer 6, and others, in that order, on an n-type InP wafer 1; wherein the MQW layer 4 includes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier layers each having strain of an opposite sign to the strain applied to the quantum well layers.
摘要翻译： 在包括应变量子阱层作为有源层的半导体激光器或电吸收光学调制器中，由于带结构，特别是DeltaEc和DeltaEv已经不能独立地调整，所以使激光特性或调制器特性足够的已经看到相应的限制。 本发明通过将n型InGaAlAs-GRIN-SCH层3，MQW层4，p型InGaAlAs-GRIN-SCH层5，p型InAlAs电子停止层6等层叠而构成 在n型InP晶片1上的顺序; 其中MQW层4包括InGaAlAs应变的量子阱层和InGaAlAsSb形成的阻挡层，每个具有与施加到量子阱层的应变相反的符号的应变。
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公开(公告)号：US06985505B2
公开(公告)日：2006-01-10
申请号：US11130150
申请日：2005-05-17
申请人： Etsuko Nomoto , Kouji Nakahara , Shinji Tsuji , Makoto Shimaoka
发明人： Etsuko Nomoto , Kouji Nakahara , Shinji Tsuji , Makoto Shimaoka
CPC分类号： H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/3201
摘要： The present invention provides a highly reliable ridge-waveguide semiconductor laser diode and an optical module. The p-side electrode of the ridge-waveguide laser diode has a first conductor layer region and a second conductor layer region formed on the first conductor layer region. At least one of facets of the second conductor layer region is recessed inward from a reflection facet. Thus, the ridge-waveguide semiconductor laser diode has a structure in which strain which is caused by the electrode stress to be applied on the diode facet is reduced and the saturable absorption does not occur. The ridge-waveguide semiconductor laser diode thus obtained is highly reliable, and the optical module using the same is remarkably high in reliability.
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公开(公告)号：US06639241B2
公开(公告)日：2003-10-28
申请号：US10073030
申请日：2002-02-12
申请人： Kouji Nakahara , Tsurugi Sudo
发明人： Kouji Nakahara , Tsurugi Sudo
IPC分类号： H01L2906
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/06226 , H01S5/06256 , H01S5/2081
摘要： In a ridge type semiconductor optical device in which both sides of the mesa stripe are recessed each into a rectangular shape by a depth reaching an active layer, a semiconductor optical device having a structure in which a structure that obstructs conductivity is disposed at a portion on the bottom of a rectangular shape. The structure that obstructs conductivity is attained, for example, by a structure in which impurities are ion implanted into a semiconductor.
摘要翻译： 在脊状半导体光学器件中，其中台面条的两侧通过到达有源层的深度凹陷成矩形形状，具有阻挡导电性的结构的半导体光学器件设置在 底部为矩形。 妨碍导电性的结构例如通过将杂质离子注入到半导体中的结构来实现。
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