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    OPTICAL SEMICONDUCTOR DEVICE
    1.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE 有权
    光学半导体器件

    公开(公告)号：US20070051939A1

    公开(公告)日：2007-03-08

    申请号：US11210760

    申请日：2005-08-25

    申请人： Kouji Nakahara ,  Makoto Kudo ,  Shigehisa Tanaka ,  Masataka Shirai

    发明人： Kouji Nakahara ,  Makoto Kudo ,  Shigehisa Tanaka ,  Masataka Shirai

    IPC分类号： H01L31/00

    CPC分类号： H01S5/34313 ,  B82Y20/00 ,  G02F1/01708 ,  G02F2001/01766 ,  H01S5/0265 ,  H01S5/0287 ,  H01S5/12 ,  H01S5/1221 ,  H01S5/227 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34366 ,  Y10S438/962

    摘要： In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ΔEc and ΔEv, have been unable to be adjusted independently. This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer 3, an MQW layer 4, a p-type InGaAlAs-GRIN-SCH layer 5, a p-type InAlAs electron-stopping layer 6, and others, in that order, on an n-type InP wafer 1; wherein the MQW layer 4 includes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier layers each having strain of an opposite sign to the strain applied to the quantum well layers.

    摘要翻译： 在包括应变量子阱层作为有源层的半导体激光器或电吸收光学调制器中，由于带结构，特别是DeltaEc和DeltaEv已经不能独立地调整，所以使激光特性或调制器特性足够的已经看到相应的限制。 本发明通过将n型InGaAlAs-GRIN-SCH层3，MQW层4，p型InGaAlAs-GRIN-SCH层5，p型InAlAs电子停止层6等层叠而构成 在n型InP晶片1上的顺序; 其中MQW层4包括InGaAlAs应变的量子阱层和InGaAlAsSb形成的阻挡层，每个具有与施加到量子阱层的应变相反的符号的应变。

    Optical semiconductor device
    2.
    发明授权
    Optical semiconductor device 有权
    光半导体器件

    公开(公告)号：US07223993B2

    公开(公告)日：2007-05-29

    申请号：US11210760

    申请日：2005-08-25

    申请人： Kouji Nakahara ,  Makoto Kudo ,  Shigehisa Tanaka ,  Masataka Shirai

    发明人： Kouji Nakahara ,  Makoto Kudo ,  Shigehisa Tanaka ,  Masataka Shirai

    IPC分类号： H01L29/06

    CPC分类号： H01S5/34313 ,  B82Y20/00 ,  G02F1/01708 ,  G02F2001/01766 ,  H01S5/0265 ,  H01S5/0287 ,  H01S5/12 ,  H01S5/1221 ,  H01S5/227 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34366 ,  Y10S438/962

    摘要： In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ΔEc and ΔEv, have been unable to be adjusted independently.This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer 3, an MQW layer 4, a p-type InGaAlAs-GRIN-SCH layer 5, a p-type InAlAs electron-stopping layer 6, and others, in that order, on an n-type InP wafer 1; wherein the MQW layer 4 includes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier layers each having strain of an opposite sign to the strain applied to the quantum well layers.

    摘要翻译： 在包括应变量子阱层作为有源层的半导体激光器或电吸收光学调制器中，由于带结构，特别是DeltaEc和DeltaEv已经不能独立地调整，所以使激光特性或调制器特性足够的已经看到相应的限制。 本发明通过将n型InGaAlAs-GRIN-SCH层3，MQW层4，p型InGaAlAs-GRIN-SCH层5，p型InAlAs电子停止层6等层叠而构成 在n型InP晶片1上的顺序; 其中MQW层4包括InGaAlAs应变的量子阱层和InGaAlAsSb形成的阻挡层，每个具有与施加到量子阱层的应变相反的符号的应变。

    Nitride semiconductor optical element and manufacturing method thereof
    3.
    发明授权
    Nitride semiconductor optical element and manufacturing method thereof 有权
    氮化物半导体光学元件及其制造方法

    公开(公告)号：US08124432B2

    公开(公告)日：2012-02-28

    申请号：US12630008

    申请日：2009-12-03

    申请人： Tomonobu Tsuchiya ,  Shigehisa Tanaka ,  Akihisa Terano ,  Kouji Nakahara

    发明人： Tomonobu Tsuchiya ,  Shigehisa Tanaka ,  Akihisa Terano ,  Kouji Nakahara

    IPC分类号： H01L21/205 ,  H01L31/18 ,  H01S5/22 ,  H01S5/343

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/0075 ,  H01S5/2009 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3407

    摘要： In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.

    摘要翻译： 在具有等于或大于蓝色的长波长（440nm或更大）的InGaN基氮化物半导体光学器件中，在抑制In（铟）偏析和结晶度劣化的同时实现波长的增加。 在制造具有包括InGaN阱层和InGaN阻挡层的InGaN基量子阱有源层的InGaN基氮化物半导体光学器件中，生长InGaN势垒层的步骤包括：第一步骤，在1 ％以上，由氮和氨组成的气体气氛，并在气体气氛中生长GaN层; 以及在由氮和氨组成的气体气氛中生长InGaN势垒层的第二步骤。

    LIGHT BEAM SCANNING IMAGE PROJECTION APPARATUS
    4.
    发明申请
    LIGHT BEAM SCANNING IMAGE PROJECTION APPARATUS 有权
    光束扫描图像投影设备

    公开(公告)号：US20110096383A1

    公开(公告)日：2011-04-28

    申请号：US12999392

    申请日：2009-06-11

    申请人： Etsuko Nomoto ,  Shigehisa Tanaka ,  Hitoshi Nakamura ,  Toshiki Sugawara ,  Kouji Nakahara

    发明人： Etsuko Nomoto ,  Shigehisa Tanaka ,  Hitoshi Nakamura ,  Toshiki Sugawara ,  Kouji Nakahara

    IPC分类号： G02B26/10

    CPC分类号： H04N9/317 ,  G02B26/10 ,  H04N9/3129

    摘要： The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object. In the light beam scanning image projection apparatus including a plurality of light sources which emit the light beams of respectively different wavelengths, a driving section which modulates the intensity of each light beam in accordance with the image signal, the light axis alignment means which aligns the light axes of each light beam, and scanning means which scans the light beams, the light axis alignment means includes: a plurality of optical elements; and an adjusting section which adjusts at least one of a position and a gradient of at least one of the optical elements, and the light beam scanning image projection apparatus further includes: detecting means which detects a shift between a spot center of each light beam and a center reference point; and position correction means which controls the adjusting section based on a detection result in the detecting means to adjust at least one of the position and the gradient of at least one of the optical elements of the light axis alignment means, thereby aligning the light axes of each light beam.

    摘要翻译： 本申请中包括的本发明的目的是即使当由于更换光源等而导致投影图像的图像质量劣化时，也能够自动防止图像的劣化。 以下光束扫描图像投影装置是实现该目的的一种手段。 在包括发射分别不同波长的光束的多个光源的光束扫描图像投影装置中，根据图像信号调制每个光束的强度的驱动部分，将对准该光束的光轴对准装置 每个光束的光轴和扫描光束的扫描装置，光轴对准装置包括：多个光学元件; 以及调整部，其调整至少一个所述光学元件的位置和倾斜度中的至少一个，并且所述光束扫描图像投影装置还包括：检测装置，其检测每个光束的光点中心与 中心参考点 以及位置校正装置，其基于检测装置中的检测结果来控制调节部分，以调整光轴对准装置的至少一个光学元件的位置和梯度中的至少一个，从而使光轴对准装置的光轴 每个光束。

    Light beam scanning image projection apparatus
    5.
    发明授权
    Light beam scanning image projection apparatus 有权
    光束扫描图像投影装置

    公开(公告)号：US08569727B2

    公开(公告)日：2013-10-29

    申请号：US12999392

    申请日：2009-06-11

    申请人： Etsuko Nomoto ,  Shigehisa Tanaka ,  Hitoshi Nakamura ,  Toshiki Sugawara ,  Kouji Nakahara

    发明人： Etsuko Nomoto ,  Shigehisa Tanaka ,  Hitoshi Nakamura ,  Toshiki Sugawara ,  Kouji Nakahara

    IPC分类号： G01V8/00

    CPC分类号： H04N9/317 ,  G02B26/10 ,  H04N9/3129

    摘要： The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object. In the light beam scanning image projection apparatus including a plurality of light sources which emit the light beams of respectively different wavelengths, a driving section which modulates the intensity of each light beam in accordance with the image signal, the light axis alignment means which aligns the light axes of each light beam, and scanning means which scans the light beams, the light axis alignment means includes: a plurality of optical elements; and an adjusting section which adjusts at least one of a position and a gradient of at least one of the optical elements, and the light beam scanning image projection apparatus further includes: detecting means which detects a shift between a spot center of each light beam and a center reference point; and position correction means which controls the adjusting section based on a detection result in the detecting means to adjust at least one of the position and the gradient of at least one of the optical elements of the light axis alignment means, thereby aligning the light axes of each light beam.

    摘要翻译： 本申请中包括的本发明的目的是即使当由于更换光源等而导致投影图像的图像质量劣化时，也能够自动防止图像的劣化。 以下光束扫描图像投影装置是实现该目的的一种手段。 在包括发射分别不同波长的光束的多个光源的光束扫描图像投影设备中，根据图像信号调制每个光束的强度的驱动部分，将对准该光束的光轴对准装置 每个光束的光轴和扫描光束的扫描装置，光轴对准装置包括：多个光学元件; 以及调整部，其调整至少一个所述光学元件的位置和倾斜度中的至少一个，并且所述光束扫描图像投影装置还包括：检测装置，其检测每个光束的光点中心与 中心参考点 以及位置校正装置，其基于检测装置中的检测结果来控制调节部分，以调整光轴对准装置的至少一个光学元件的位置和梯度中的至少一个，从而使光轴对准装置的光轴 每个光束。

    Avalanche photodiode
    7.
    发明申请
    Avalanche photodiode 有权
    雪崩光电二极管

    公开(公告)号：US20060110841A1

    公开(公告)日：2006-05-25

    申请号：US11320750

    申请日：2005-12-30

    申请人： Shigehisa Tanaka ,  Sumiko Fujisaki ,  Yasunobu Matsuoka

    发明人： Shigehisa Tanaka ,  Sumiko Fujisaki ,  Yasunobu Matsuoka

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1075

    摘要： An avalanche photodiode includes at least one crystal layer having a larger band-gap than that of an absorption layer formed by a composition or material different from that of the absorption layer formed on a junction interface between a compound semiconductor absorbing an optical signal and an Si multiplication layer, and the crystal layer may be intentionally doped with n or p type impurities to cancel electrical influences of the impurities containing oxides present on the junction interface of compound semiconductor and surface of Si.

    摘要翻译： 雪崩光电二极管包括至少一个具有比由吸收层形成的吸收层的组成或材料形成的吸收层更大的带隙的晶体层，所述组合物或材料与形成在吸收光信号的化合物半导体和Si 可以有意地用n或p型杂质掺杂晶体层，以消除存在于化合物半导体的结界面和Si表面上的存在的氧化物的杂质的电学影响。

    SEMICONDUCTOR PHOTODETECTOR WITH OHMIC CONTACT AREAS FORMED TO PREVENT INCIDENT LIGHT FROM RESOLVING THE AREAS, SEMICONDUCTOR PHOTO RECEIVER AND SEMICONDUCTOR DEVICE INSTALLED WITH THE SEMICONDUCTOR PHOTODETECTOR
    8.
    发明授权
    SEMICONDUCTOR PHOTODETECTOR WITH OHMIC CONTACT AREAS FORMED TO PREVENT INCIDENT LIGHT FROM RESOLVING THE AREAS, SEMICONDUCTOR PHOTO RECEIVER AND SEMICONDUCTOR DEVICE INSTALLED WITH THE SEMICONDUCTOR PHOTODETECTOR 有权
    具有OHMIC联系方式的半导体光电转换器，用于防止偶然的光源解决领域，半导体照相接收器和半导体器件与半导体光电二极管安装

    公开(公告)号：US06670600B2

    公开(公告)日：2003-12-30

    申请号：US09905956

    申请日：2001-07-17

    申请人： Akihisa Terano ,  Yasunobu Matsuoka ,  Shigehisa Tanaka

    发明人： Akihisa Terano ,  Yasunobu Matsuoka ,  Shigehisa Tanaka

    IPC分类号： H01L3100

    CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/423 ,  H01L31/035236

    摘要： An ultrahigh speed, high sensitivity photodetector, optical module and/or optical transmission device made by reducing the size of a surface illuminated type photodetector to decrease capacitance C. The effective detecting area on a side of the substrate that is opposite to a light incidence side of the substrate in a surface illuminated type photodetector and that is reached by the incident light passing through the semiconductor includes a plurality of ohmic contact areas and a reflector. The reflector may be a laminate comprised of two films in contact with the semiconductor including a transparent film (lower) and a metal film (upper). The size of the ohmic contacts may be small when compared to the wavelength of light incident on the surface of the photodetector. The photodetector may be used in ultrahigh speed, high sensitivity optical modules, semiconductor photo receivers and optical transmission devices with increased transmission capacities.

    摘要翻译： 通过减小表面照明型光电检测器的尺寸以减小电容C制成的超高速度，高灵敏度的光电检测器，光学模块和/或光传输装置。基板的与光入射侧相反的一侧上的有效检测区域 在通过半导体的入射光所达到的表面照明型光电检测器中的基板包括多个欧姆接触区域和反射器。 反射器可以是由包括透明膜（下）和金属膜（上部）的与半导体接触的两个膜组成的层压体。 当与入射在光电检测器表面上的光的波长相比时，欧姆接触的尺寸可能很小。 光电检测器可以用于具有增加的传输容量的超高速，高灵敏度光学模块，半导体光电接收器和光传输装置中。