INTEGRATED TOOL LIFT
    12.
    发明公开

    公开(公告)号:US20240304490A1

    公开(公告)日:2024-09-12

    申请号:US18670338

    申请日:2024-05-21

    CPC classification number: H01L21/68742 H01L21/67161 H01L21/68

    Abstract: Semiconductor processing tools are provided that include a support framework, semiconductor processing chambers arranged along an axis, an attachment point connected to the support framework, and a detachable hoist system. Each chamber includes a base portion fixedly mounted relative to the support framework and a removable top cover including one or more hoisting features. The detachable hoist system includes a vertical member including a top end including a complementary attachment point and a bottom end including a movement mechanism supported by a floor. The complementary attachment point is detachably connected to the attachment point. The detachable hoist system further includes a hoist arm connected to the vertical member. The hoist arm is configured to pivot about a vertical axis substantially perpendicular to the axis, and includes one or more links and a hoist feature engagement interface configured to engage with the hoisting features of any of the removable top covers.

    REPLACEABLE UPPER CHAMBER PARTS OF PLASMA PROCESSING APPARATUS
    17.
    发明申请
    REPLACEABLE UPPER CHAMBER PARTS OF PLASMA PROCESSING APPARATUS 审中-公开
    等离子加工设备可更换的上部部件

    公开(公告)号:US20150279621A1

    公开(公告)日:2015-10-01

    申请号:US14730771

    申请日:2015-06-04

    Abstract: An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.

    Abstract translation: 等离子体反应室的上腔室包括在上表面中具有用于接收热偶的盲孔的陶瓷窗口和电阻温度检测器,顶室接口,其包括上表面,真空密封在窗口的底部 以及气体注入系统,其包括安装在顶部腔室界面的侧壁中的8个侧注射器,以及气体输送系统,其包括从单个气体进料连接向8个喷射器提供对称气体流的管道。

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