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    DISPLAY APPARATUS USING SEMICONDUCTOR LIGHT-EMITTING DEVICE
    11.
    发明申请
    DISPLAY APPARATUS USING SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20230110862A1

    公开(公告)日：2023-04-13

    申请号：US17904506

    申请日：2020-02-25

    Applicant: LG ELECTRONICS INC.

    Inventor： Youngdo KIM ,  Soohyun KIM ,  Indo CHUNG ,  Jeonghyo KWON ,  Junoh SHIN

    IPC: H01L33/38 ,  H01L25/075 ,  H01L33/62

    Abstract: A display apparatus according to the present invention comprises a substrate including semiconductor light-emitting devices and a wiring electrode electrically connected to the semiconductor light-emitting devices, wherein the substrate comprises: a base portion; assembly electrodes extending in one direction and arranged on the base portion; a dielectric layer formed to cover the assembly electrodes; a barrier portion formed on the dielectric layer while forming a cell on which the semiconductor light-emitting devices are mounted along an extension direction of the assembly electrodes; and a planarization layer formed to cover the barrier portion while forming a hole overlapping the cell, wherein the hole comprises: a first hole exposing the semiconductor light-emitting device; and a second hole exposing the dielectric layer or the base portion.

    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    12.
    发明申请
    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190326457A1

    公开(公告)日：2019-10-24

    申请号：US16502812

    申请日：2019-07-03

    Applicant: LG ELECTRONICS INC.

    Inventor： Indo CHUNG ,  Juhong YANG ,  Eunjoo LEE ,  Mihee HEO

    IPC: H01L31/0224 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/068

    Abstract: A solar cell can include a semiconductor substrate; a tunneling layer formed over the semiconductor substrate; a conductive area located over the tunneling layer, the conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type; and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, wherein a mark is located in at least one of the first conductive area and the second conductive area, and has a different shape from that of a crystal plane of the semiconductor substrate and the conductive area, and wherein the mark is formed along a longitudinally extending edge of at least one of the first conductive area and the second conductive area.

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    14.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：US20160027951A1

    公开(公告)日：2016-01-28

    申请号：US14811475

    申请日：2015-07-28

    Applicant: LG ELECTRONICS INC.

    Inventor： Seunghwan SHIM ,  Ilhyoung JUNG ,  Indo CHUNG ,  Eunhye YOUN

    IPC: H01L31/077 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/028

    CPC classification number: H01L31/077 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with impurities of a first conductive type, a front surface field region disposed at a front surface of the substrate and doped with impurities of the first conductive type at a concentration higher than those of the substrate, a tunnel layer disposed on a back surface of the substrate and formed of a dielectric material, an emitter region disposed at a first portion of a back surface of the tunnel layer and doped with impurities of a second conductive type opposite the first conductive type, and a back surface field region disposed at a second portion of the back surface of the tunnel layer and doped with impurities of the first conductive type at a concentration higher than those of the substrate.

    Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括掺杂有第一导电类型的杂质的半导体衬底，设置在衬底的前表面处的前表面场区域，并且以高于衬底的浓度掺杂第一导电类型的杂质，隧道 层，其设置在所述基板的背面上并由电介质材料形成，所述发射极区域设置在所述隧道层的背面的第一部分并且掺杂有与所述第一导电类型相反的第二导电类型的杂质，以及背面 表面场区域设置在隧道层的后表面的第二部分处，并以高于衬底的浓度掺杂第一导电类型的杂质。

    DISPLAY DEVICE
    15.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20250072188A1

    公开(公告)日：2025-02-27

    申请号：US18727604

    申请日：2022-01-19

    Applicant: LG ELECTRONICS INC.

    Inventor： Jinhyeok CHOI ,  Indo CHUNG ,  Youngdo KIM

    IPC: H01L33/62 ,  H01L25/075

    Abstract: A display device can include a substrate, a first assembling wiring on the substrate, a second assembling wiring on the substrate, a partition wall disposed on the first and second assembling wirings and having a hole, a semiconductor light-emitting device disposed in the hole and having a first step difference part on a side portion thereof, and a connection electrode disposed on at least the first step difference part.

    DISPLAY DEVICE
    16.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20240266491A1

    公开(公告)日：2024-08-08

    申请号：US18681712

    申请日：2021-08-27

    Applicant: LG ELECTRONICS INC.

    Inventor： Indo CHUNG ,  Yongdae KIM ,  Youngdo KIM

    IPC: H01L33/62 ,  G06F1/16 ,  H01L25/075

    CPC classification number: H01L33/62 ,  G06F1/1652 ,  H01L25/0753

    Abstract: The display device can include a substrate, a first insulating layer on the substrate, first and second assembling wirings on the substrate, a second insulating layer disposed on the first and second assembling wirings and having a first hole and at least one or more second hole extending in a lateral direction of the first hole, a semiconductor light emitting device in the first hole, and a connection electrode in the second hole.

    DISPLAY DEVICE USING MICRO LED, AND MANUFACTURING METHOD THEREFOR
    17.
    发明申请
    DISPLAY DEVICE USING MICRO LED, AND MANUFACTURING METHOD THEREFOR 有权

    公开(公告)号：US20220375915A1

    公开(公告)日：2022-11-24

    申请号：US17770855

    申请日：2019-10-22

    Applicant: LG ELECTRONICS INC.

    Inventor： Dohan KIM ,  Jeonghyo KWON ,  Soohyun KIM ,  Indo CHUNG

    IPC: H01L25/16 ,  H01L27/12 ,  H01L23/00

    Abstract: The present disclosure provides a novel form of a display device which enables semiconductor light emitting elements having a vertical structure to be assembled onto a substrate and then wiring process to be performed stably without any change to the position of the elements during post-processing. The display device according to one embodiment of the present disclosure comprises: a substrate; a pair of assembly electrodes positioned on the substrate; a dielectric layer positioned on the assembly electrodes; a wiring electrode positioned on the dielectric layer and comprising a base electrode part and a low melting point junction; a partition wall which overlaps with a portion of the wiring electrode, is positioned on the dielectric layer, and defines an assembly groove to which a semiconductor light emitting element is assembled; and the vertical semiconductor light emitting element which is assembled in the assembly groove and is electrically connected to the low melting point junction of the wiring electrode, wherein the low melting point junction has a flow stop angle for controlling the thermal flow characteristic of the junction.

    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    18.
    发明申请
    SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20170236972A1

    公开(公告)日：2017-08-17

    申请号：US15429878

    申请日：2017-02-10

    Applicant: LG ELECTRONICS INC.

    Inventor： Indo CHUNG ,  Jeongbeom NAM ,  Juhong YANG

    IPC: H01L31/18

    CPC classification number: H01L31/1868 ,  H01L31/022441 ,  H01L31/0745 ,  H01L31/18 ,  Y02E10/50

    Abstract: A method of manufacturing a solar cell is disclosed. The method includes forming a control passivation layer on a back surface of a semiconductor substrate containing impurities of a first conductivity type, forming an emitter region containing impurities of a second conductivity type opposite the first conductivity type and a back surface field region containing impurities of the first conductivity type on the control passivation layer, forming a passivation layer on the emitter region and the back surface field region, forming first and second openings in the passivation layer by using a pulse type laser having a continuously uniform intensity, forming a first electrode electrically and physically connected to the emitter region through the first opening, and forming a second electrode electrically and physically connected to the back surface field region through the second opening.

    SOLAR CELL
    19.
    发明申请
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号：US20150263193A1

    公开(公告)日：2015-09-17

    申请号：US14659053

    申请日：2015-03-16

    Applicant: LG ELECTRONICS INC.

    Inventor： Indo CHUNG ,  Seunghwan SHIM ,  Ilhyoung JUNG ,  Jeongbeom NAM

    IPC: H01L31/0224 ,  H01L31/0216

    CPC classification number: H01L31/022433 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Discussed is a solar cell includes a semiconductor substrate, a conductive type region including a first conductive type region and a second conductive type region formed on one surface of the semiconductor substrate, an electrode including a first electrode and a second electrode, wherein the first electrode is connected to the first conductive type region and the second electrode is connected to the second conductive type region, and a passivation layer formed on the conductive type region. The passivation layer includes at least one of silicon nitride and silicon carbide.

    Abstract translation: 讨论了一种太阳能电池，包括半导体衬底，包括形成在半导体衬底的一个表面上的第一导电类型区域和第二导电类型区域的导电类型区域，包括第一电极和第二电极的电极，其中第一电极 连接到第一导电类型区域，并且第二电极连接到第二导电类型区域，以及形成在导电类型区域上的钝化层。 钝化层包括氮化硅和碳化硅中的至少一种。

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