公开(公告)号：US20200350445A1

公开(公告)日：2020-11-05

申请号：US16933363

申请日：2020-07-20

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Yundeok YOON ,  Jaesung KIM ,  Junyong AHN

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/068

Abstract: A method of manufacturing a solar cell, includes forming a rounded uneven member having a rounded end portion at a second surface of a semiconductor substrate having a first surface and the second surface opposite to each other, forming conductive regions comprising forming a first conductive region at the first surface of the semiconductor substrate and forming a second conductive region on the second surface of the semiconductor substrate, wherein the second conductive region comprises a semiconductor layer different and separated from the semiconductor substrate and forming electrodes comprising forming a first electrode electrically connected to the first conductive region and forming a second electrode electrically connected to the second conductive region.

公开(公告)号：US20180277694A1

公开(公告)日：2018-09-27

申请号：US15995701

申请日：2018-06-01

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0216

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.

公开(公告)号：US20170005218A1

公开(公告)日：2017-01-05

申请号：US15196743

申请日：2016-06-29

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae CHANG ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN

IPC: H01L31/0745 ,  H01L31/0236 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0216

Abstract: Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

Abstract translation: 公开了一种太阳能电池，包括半导体衬底和设置在半导体衬底的一个表面上并具有不同于半导体衬底的晶体结构的掺杂剂层，掺杂剂层包括掺杂剂。 掺杂剂层包括在其厚度方向上彼此层叠的多个半导体层，以及插入其间的界面层。 界面层是具有比多个半导体层中的每一个更高的氧浓度的氧化物层。

公开(公告)号：US20140116506A1

公开(公告)日：2014-05-01

申请号：US14146501

申请日：2014-01-02

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Hyunjung PARK ,  Junyong AHN ,  Seongeun LEE ,  Jiweon JEONG

IPC: H01L31/0236 ,  H01L31/0216

CPC classification number: H01L31/02363 ,  H01L31/02168 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

Abstract: A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO3, and up to about 30 wt % of acetic acid based on total weight of the etchant.

Abstract translation: 太阳能电池的制造方法包括在基板的表面上不均匀地形成锯齿状的部分，在基板上形成第一型半导体和第二型半导体，形成与第一型半导体接触的第一电极，形成第二 电极接触第二类型半导体。 在制造太阳能电池的湿式蚀刻工艺中使用的蚀刻剂包括约0.5重量％至10重量％的HF，约30重量％至60重量％的HNO 3和至多约30重量％的基于总重量的乙酸 的蚀刻剂。

公开(公告)号：US20220077331A1

公开(公告)日：2022-03-10

申请号：US17529805

申请日：2021-11-18

Applicant: LG ELECTRONICS INC.

Inventor： Haejong CHO ,  Donghae OH ,  Juhwa CHEONG ,  Junyong AHN

IPC: H01L31/0224 ,  H01B1/16 ,  C03C8/18 ,  C03C4/14 ,  C03C8/10 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/068

Abstract: Discussed is a solar cell including a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

公开(公告)号：US20200035852A1

公开(公告)日：2020-01-30

申请号：US16520014

申请日：2019-07-23

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae CHANG ,  Junyong AHN ,  Hyunho LEE

IPC: H01L31/18 ,  C23C16/24 ,  C23C16/455 ,  C23C16/458

Abstract: Provided is a Chemical vapor deposition (CVD) equipment including a chamber having an inner space, a plurality of silicon wafers disposed in the inner space of the chamber in an upright position; and a plurality of shower nozzles configured to inject a mixed gas composed of a silicon deposition gas and an impurity gas toward each side edge of the plurality of wafers. The plurality of shower nozzles can be disposed at both sides of the plurality of the plurality of silicon wafers.

公开(公告)号：US20190334049A1

公开(公告)日：2019-10-31

申请号：US16504995

申请日：2019-07-08

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae CHANG ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN

IPC: H01L31/0745 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/0216 ,  H01L31/0368

Abstract: Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

公开(公告)号：US20190319140A1

公开(公告)日：2019-10-17

申请号：US16456915

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0216

Abstract: A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.

公开(公告)号：US20180190843A1

公开(公告)日：2018-07-05

申请号：US15903653

申请日：2018-02-23

Applicant: LG ELECTRONICS INC.

Inventor： Junyong AHN ,  Younghyun LEE ,  Jinhyung LEE

IPC: H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/022433 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547

Abstract: A solar cell includes a first conductive type substrate; an emitter layer of a second conductive type opposite the first conductive type, the emitter layer and the substrate forming a p-n junction; an anti-reflection layer positioned on the emitter layer; a plurality of first electrodes passing through the anti-reflection layer and being electrically connected to the emitter layer, at least one of the plurality of first electrodes including: a first electrode layer and a plurality of first electrode auxiliaries separated from the first electrode layer and positioned around the first electrode layer; and a second electrode layer positioned on the first electrode layer and on the plurality of first electrode auxiliaries; and a second electrode electrically connected to the substrate.

公开(公告)号：US20170222085A1

公开(公告)日：2017-08-03

申请号：US15418336

申请日：2017-01-27

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Junyong AHN ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/18 ,  H01L31/20

CPC classification number: H01L31/1864 ,  H01L31/0216 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/186 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/546 ,  Y02E10/547

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.