Abstract:
The display device can comprise a first wiring, a second wiring disposed on a different layer from the first wiring, a pad disposed on the same layer as the second wiring and that vertically overlaps the first wiring, and on the pad and the second wiring. It is disposed and can comprise an insulating layer having an assembly hole, and a semiconductor light emitting device disposed on a pad and a second wiring within the assembly hole. The embodiment prevents separation of the semiconductor light emitting device, improves the light efficiency of the semiconductor light emitting device to implement high luminance, and significantly improves light efficiency, thereby implementing further improved high resolution.
Abstract:
Discussed are a display device and a method of manufacturing the same, and more particularly, to a display device including a semiconductor light emitting device having a size of several μm to several tens of μm and a method of manufacturing the same. The present disclosure provides a display device, including a base portion, a plurality of transistors disposed on the base portion, a plurality of semiconductor light emitting devices disposed on the base portion, a plurality of wiring electrodes disposed on the base portion, and electrically connected to the plurality of transistors and the plurality of semiconductor light emitting devices, a partition wall disposed on the base portion, and formed to cover the plurality of transistors, and a connection electrode connecting some of the plurality of transistors and some of the plurality of wiring electrodes, wherein the connection electrode is configured to pass through the partition wall.
Abstract:
A compound semiconductor solar cell that includes: a light absorbing layer; a first electrode; and a second electrode, wherein the light absorbing layer includes; a first semiconductor layer having a first band gap, a second semiconductor layer having a second band gap being larger than the first band gap and forming a hetero junction with the first semiconductor layer, and including a first material and a second material, and wherein in the junction buffer layer, a concentration of the first material on a surface in contact with the second semiconductor layer is larger than the concentration of the first material on a surface in contact with the first semiconductor layer, and a concentration of the second material on the surface in contact with the second semiconductor layer is smaller than the concentration of the second material on the surface in contact with the first semiconductor layer is disclosed.
Abstract:
A solar cell is discussed, and includes a substrate; a first field region; a first electrode directly formed on an emitter region; and a second electrode directly formed on a second field region, wherein a second passivation layer comprises a first back passivation portion and a second back passivation portion. Furthermore, the first back passivation portion is merely positioned between the emitter region and the substrate and the second field region and the substrate, and the second back passivation portion is positioned between the emitter region and the second field region, and wherein the first back passivation portion positioned between the emitter region and the substrate is physically separated from first back passivation portion positioned between the second field region and the substrate.
Abstract:
Manufacturing an exterior decor panel for a home appliance includes laminating a photosensitive dry film on a front surface of a metal sheet, the photosensitive dry film having a higher etch resistance than the metal sheet against an electrolytic solution, photo-masking the photosensitive dry film attached to the metal sheet to create a pattern having a minimum width of 0.1 mm in the photosensitive dry film to thereby expose the front surface of the metal sheet corresponding to the pattern in the photosensitive film, electrolytic-polishing the photo-masked metal sheet by dipping the photo-masked metal sheet in an electrolytic bath to allow the electrolytic solution to contact the exposed front surface of the metal sheet and form the pattern in the front surface of the metal sheet, and performing post-treatment on the metal sheet, the post-treatment including washing and removing the photosensitive dry film.
Abstract:
The present disclosure is applicable to a technical field related to display devices, and relates to a display device using, for example, a micro light emitting diode (LED), and a manufacturing method therefor. The present disclosure may comprise: a substrate; a partition defining a unit pixel region; a first electrode located in the unit pixel region; a semiconductor light-emitting element electrically connecting a first-type electrode to the first electrode and provided in the unit pixel region; an inclined a layer formed on the semiconductor light-emitting element and the partition, and having a high incline on the semiconductor light-emitting element; and a second electrode electrically connected, on the inclined coating layer, to a second-type electrode of the semiconductor light-emitting element.
Abstract:
The present invention is applicable to a display device-related technical field, and relates to, for example, a flat lighting device and a display device using a light-emitting diode (LED). The present invention relates to a display device including a plurality of individual unit compartment regions, comprising: at least one light-emitting diode provided in the individual unit compartment regions; a gate-on voltage line connected to the light-emitting diode; a first scan line for applying a common voltage to the plurality of individual unit compartment regions; a second scan line for applying a voltage inverted from the common voltage to the plurality of individual unit compartment regions; a data line for applying individual switching voltages to the plurality of individual unit compartment regions; a driving unit including a driving MOSFET device connected to the light-emitting diode; and a switching unit including a switching MOSFET device connected to the first scan line and the data line to perform a switching operation.
Abstract:
Discussed is a method of manufacturing a display device, the method including: introducing semiconductor light emitting devices including a magnetic material into a fluid chamber; transferring a substrate to the fluid chamber, the substrate including assembly electrodes, an insulating layer covering the assembly electrodes, and open holes in the insulating layer and exposing portions of both ends of the assembly electrodes; applying a magnetic force to the semiconductor light emitting devices introduced into the fluid chamber to move the semiconductor light emitting devices in one direction; and forming an electric field so that the moving semiconductor light emitting devices are disposed at preset positions of the substrate, wherein a probe pin is in contact with the assembly electrodes exposed through the open holes to individually apply a voltage to the assembly electrodes to form the electric field.
Abstract:
Disclosed in the present specification are a micro LED display device in which an assembly electrode capable of forming a non-uniform electric field is assembled in a provided assembly hole, and a manufacturing method therefor. The display device according to one embodiment of the present invention comprises: a substrate; a first assembly electrode and a second assembly electrode arranged to be spaced apart on the substrate; an insulating layer deposited on top of the first assembly electrode and the second assembly electrode; an assembly hole defining a pixel area formed on the insulating layer; a semiconductor light-emitting element assembled in the assembly hole; and a wiring electrode electrically connected to the semiconductor light-emitting element, wherein the first assembly electrode and the second assembly electrode have a pattern for generating non-uniform electric field in the assembly hole by means of applied voltage, and the semiconductor light-emitting element is assembled, on the basis of the non-uniform electric field, at a specific location in the assembly hole after moving in a specific direction.
Abstract:
A solar cell includes a substrate; a first passivation layer on a first surface of the substrate; a first field region on the first surface of the substrate; an anti-reflection layer on the first passivation layer; a second passivation layer on a second surface of the substrate; an emitter region on the second passivation layer, the emitter region forming a p-n junction and a hetero-junction junction with the substrate; a second field region on the second passivation layer, the second field region forming a hetero-junction with the substrate; a first electrode contacted to the emitter region; a second electrode contacted to the second field region; a spacing between the emitter region and the second field region; and a third passivation layer on the second surface of the substrate at the spacing.