CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT
    11.
    发明申请
    CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT 有权
    具有薄导电元件的化学器件

    公开(公告)号:US20160153930A1

    公开(公告)日:2016-06-02

    申请号:US15014802

    申请日:2016-02-03

    Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

    Abstract translation: 在一个实施方式中,描述了化学装置。 传感器包括化学敏感的场效应晶体管,其包括具有彼此电耦合的多个浮置栅极导体的浮动栅极结构。 导电元件覆盖并与多个浮置栅极导体中的最上面的浮动栅极导体连通。 导电元件比最上面的浮栅导体更宽和更薄。 介电材料限定了延伸到导电元件的上表面的开口。

    CHEMICAL SENSOR WITH CONSISTENT SENSOR SURFACE AREAS
    12.
    发明申请
    CHEMICAL SENSOR WITH CONSISTENT SENSOR SURFACE AREAS 审中-公开
    具有一致传感器表面区域的化学传感器

    公开(公告)号:US20140264472A1

    公开(公告)日:2014-09-18

    申请号:US14198417

    申请日:2014-03-05

    Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.

    Abstract translation: 在一个实施例中,描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口,该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮栅导体的上表面并沿着开口的侧壁延伸一段距离。

    CHEMICAL SENSOR WITH PROTRUDED SENSOR SURFACE
    13.
    发明申请
    CHEMICAL SENSOR WITH PROTRUDED SENSOR SURFACE 有权
    带传感器表面的化学传感器

    公开(公告)号:US20140264322A1

    公开(公告)日:2014-09-18

    申请号:US14197741

    申请日:2014-03-05

    CPC classification number: G01N27/4145

    Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A conductive element protrudes from the upper surface of the floating gate conductor into an opening. A dielectric material defines a reaction region. The reaction region overlies and extends below an upper surface of the conductive element.

    Abstract translation: 在一个实施方式中,描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 导电元件从浮栅导体的上表面突出到开口中。 电介质材料限定了反应区域。 反应区域覆盖并延伸到导电元件的上表面下方。

    SELF-ALIGNED WELL STRUCTURES FOR LOW-NOISE CHEMICAL SENSORS
    15.
    发明申请
    SELF-ALIGNED WELL STRUCTURES FOR LOW-NOISE CHEMICAL SENSORS 有权
    低噪声化学传感器的自对准结构

    公开(公告)号:US20140209982A1

    公开(公告)日:2014-07-31

    申请号:US13751575

    申请日:2013-01-28

    CPC classification number: G01N27/4145 G01N27/414 G01N27/4148

    Abstract: In one implementation, a chemical detection device is described. The device includes a chemically-sensitive field effect transistor including a floating gate conductor coupled to a gate dielectric and having an upper surface, and a sensing material on the upper surface. The device also includes a fill material defining a reaction region extending above the sensing material, the reaction region overlying and substantially aligned with the floating gate conductor.

    Abstract translation: 在一个实施方式中,描述了化学检测装置。 该器件包括化学敏感的场效应晶体管,其包括耦合到栅极电介质并具有上表面的浮动栅极导体和在上表面上的感测材料。 该装置还包括填充材料,其限定在感测材料上方延伸的反应区域,反应区域覆盖并基本上与浮动栅极导体对准。

    METHODS AND SYSTEMS FOR POINT OF USE REMOVAL OF SACRIFICIAL MATERIAL
    16.
    发明申请
    METHODS AND SYSTEMS FOR POINT OF USE REMOVAL OF SACRIFICIAL MATERIAL 有权
    使用移除材料的方法和系统

    公开(公告)号:US20140191292A1

    公开(公告)日:2014-07-10

    申请号:US13734696

    申请日:2013-01-04

    CPC classification number: H01L21/31105 G01N27/4145 H01L21/31144

    Abstract: A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemFETs, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemFETs. The protective layer is at least one of a polymer, photoresist material, noble metal, copper oxide, and zinc oxide. The protective layer is removed using at least one of sodium hydroxide, organic solvent, aqua regia, ammonium carbonate, hydrochloric acid, acetic acid, and phosphoric acid.

    Abstract translation: 一种制造传感器的方法,所述方法包括形成化学敏感场效应晶体管阵列(chemFET),在阵列中的chemFET上沉积电介质层,在电介质层上沉积保护层,蚀刻电介质层和 保护层以形成对应于chemFET的感测表面的空腔,以及去除保护层。 该方法还包括:将电介质层和保护层一起蚀刻以形成对应于chemFET的感测表面的空腔。 保护层是聚合物,光致抗蚀剂材料,贵金属,氧化铜和氧化锌中的至少一种。 使用氢氧化钠,有机溶剂,王水,碳酸铵,盐酸,乙酸和磷酸中的至少一种除去保护层。

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