公开(公告)号：US20130049114A1

公开(公告)日：2013-02-28

申请号：US13216276

申请日：2011-08-24

申请人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Shan-Shi Huang ,  Ke-Feng Lin ,  Te-Yuan Wu

发明人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Shan-Shi Huang ,  Ke-Feng Lin ,  Te-Yuan Wu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66681 ,  H01L21/0334 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66659 ,  H01L29/7816

摘要： The present invention provides a high voltage metal-oxide-semiconductor transistor device including a substrate, a deep well, and a doped region. The substrate and the doped region have a first conductive type, and the substrate has at least one electric field concentration region. The deep well has a second conductive type different from the first conductive type. The deep well is disposed in the substrate, and the doped region is disposed in the deep well. The doping concentrations of the doped region and the deep well in the electric field have a first ratio, and the doping concentrations of the doped region and the deep well outside the electric field have a second ratio. The first ratio is greater than the second ratio.

摘要翻译： 本发明提供一种包括衬底，深阱和掺杂区的高电压金属氧化物半导体晶体管器件。 衬底和掺杂区域具有第一导电类型，并且衬底具有至少一个电场集中区域。 深井具有不同于第一导电类型的第二导电类型。 深阱设置在衬底中，并且掺杂区域设置在深阱中。 掺杂区域和深阱在电场中的掺杂浓度具有第一比例，并且掺杂区域和电场外的深阱的掺杂浓度具有第二比例。 第一比例大于第二比率。

公开(公告)号：US20120313175A1

公开(公告)日：2012-12-13

申请号：US13156352

申请日：2011-06-09

申请人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Wen-Fang Lee ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee

发明人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Wen-Fang Lee ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee

IPC分类号： H01L27/06

CPC分类号： H01L27/0277 ,  H01L21/761 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0623 ,  H01L27/0922

摘要： The present invention provides a semiconductor device including a substrate, a deep well, a high-voltage well, and a doped region. The substrate and the high-voltage well have a first conductive type, and the deep well and the doped region have a second conductive type different from the first conductive type. The substrate has a high-voltage region and a low-voltage region, and the deep well is disposed in the substrate in the high-voltage region. The high-voltage well is disposed in the substrate between the high-voltage region and the low-voltage region, and the doped region is disposed in the high-voltage well. The doped region and the high-voltage well are electrically connected to a ground.

摘要翻译： 本发明提供一种包括衬底，深阱，高压阱和掺杂区的半导体器件。 衬底和高压阱具有第一导电类型，并且深阱和掺杂区具有不同于第一导电类型的第二导电类型。 衬底具有高电压区域和低电压区域，并且深阱设置在高压区域中的衬底中。 高电压阱设置在高电压区域和低电压区域之间的衬底中，掺杂区域设置在高压阱中。 掺杂区和高电压阱电连接到地。

公开(公告)号：US5632603A

公开(公告)日：1997-05-27

申请号：US384286

申请日：1995-02-01

申请人： Kenneth R. Taylor ,  Chih-Chung Wang

发明人： Kenneth R. Taylor ,  Chih-Chung Wang

IPC分类号： B01D19/00 ,  B01F11/00 ,  H01M4/04 ,  H01M4/12 ,  F04B23/08

CPC分类号： H01M4/0478 ,  B01D19/0036 ,  B01D19/0042 ,  B01F11/0065 ,  H01M4/04 ,  H01M4/0473 ,  H01M4/12 ,  H01M2300/0014

摘要： An apparatus for the transfer or conveyance of a slurry and the simultaneous densification thereof through the intermediary of vacuum pumping. Specifically, disclosed is an apparatus for the vacuum pumping of a slurry, particularly a zinc-containing slurry utilized in the preparation of zinc anodes for alkaline batteries, which facilitates the transfer of the slurry and the concurrent densification thereof in conjunction with the elimination of any gas bubbles which are entrapped in the slurry. Also disclosed is a method of transferring and simultaneously densifying a slurry while eliminating entrapped gas bubbles therefrom through the intermediary of a vacuum pumping process utilizing the disclosed apparatus.

摘要翻译： 用于转移或输送浆料的设备，并通过真空泵送的中间同时致密化。 具体地，公开了一种用于真空泵送浆料，特别是用于制备碱性电池的锌阳极的含锌浆料的装置，其有利于浆料的转移和其同时致密化，同时消除任何 被包埋在浆料中的气泡。 还公开了一种通过利用所公开的装置的真空泵送方法来转移并同时致密化浆料的方法，同时从其中除去截留的气泡。

公开(公告)号：US4840644A

公开(公告)日：1989-06-20

申请号：US148182

申请日：1988-01-26

申请人： Purush Chalilpoyil ,  Frank E. Parsen ,  Chih-Chung Wang

发明人： Purush Chalilpoyil ,  Frank E. Parsen ,  Chih-Chung Wang

IPC分类号： H01M4/02 ,  H01M4/62 ,  H01M6/04

CPC分类号： H01M4/628 ,  H01M4/02 ,  H01M4/62 ,  H01M6/04 ,  Y10T29/49108

摘要： Corrosion is reduced in aqueous electrochemical cells having zinc anodes comprised of single crystal zinc particles by the addition of small amounts of a gas inhibiting surfactant, for example, an organic phosphate inhibitor such as RA600 from GAF Corp. to the cell. A synergistically lowered rate of corrosion and cell gassing is obtained even with reduction of mercury content.

摘要翻译： 通过加入少量阻气表面活性剂，例如有机磷酸盐抑制剂如GAF公司的RA600，将具有由单晶锌颗粒组成的锌阳极的水电化学电池中的腐蚀减少到电池。 即使减少汞含量，也能获得协同降低的腐蚀速率和电池放气。

公开(公告)号：US4777100A

公开(公告)日：1988-10-11

申请号：US72361

申请日：1987-07-13

申请人： Purush Chalilpoyil ,  Frank E. Parsen ,  Chih-Chung Wang

发明人： Purush Chalilpoyil ,  Frank E. Parsen ,  Chih-Chung Wang

IPC分类号： H01M4/38 ,  H01M4/62 ,  H01M4/42 ,  H01M10/24

CPC分类号： H01M4/628 ,  H01M4/38

摘要： Corrosion is reduced in aqueous electrochemical cells having zinc anodes comprised of single crystal zinc particles by the addition of small amounts of a gas inhibiting surfactant, for example, an organic phosphate inhibitor such as RA600 from GAF Corp. to the cell. A synergistically lowered rate of corrosion and cell gassing is obtained even with reduction of mercury content.

摘要翻译： 通过加入少量阻气表面活性剂，例如有机磷酸盐抑制剂如GAF公司的RA600，将具有由单晶锌颗粒组成的锌阳极的水电化学电池中的腐蚀减少到电池。 即使减少汞含量，也能获得协同降低的腐蚀速率和电池放气。

公开(公告)号：US4585716A

公开(公告)日：1986-04-29

申请号：US764454

申请日：1985-08-12

申请人： Purush Chalilpoyil ,  Jesse R. Rea ,  Frank E. Parsen ,  Chih-Chung Wang

发明人： Purush Chalilpoyil ,  Jesse R. Rea ,  Frank E. Parsen ,  Chih-Chung Wang

IPC分类号： H01M4/38 ,  H01M4/62 ,  H01M6/04 ,  H01M4/08 ,  H01M4/26 ,  H01M4/42

CPC分类号： H01M4/628 ,  H01M4/38 ,  H01M6/04 ,  Y10T29/49108

摘要： Corrosion is reduced in aqueous electrochemical cells having zinc anodes by utilizing mercury amalgamated discrete single crystal zinc particles to which small amounts of one or more of indium, thallium, gallium, bismuth, cadmium, tin and lead have been added or prealloyed with the zinc, prior to formation of the single crystal particles. A synergistically lowered rate of corrosion and cell gassing is obtained even with reduction of mercury content.

摘要翻译： 通过使用汞合并的离散单晶锌颗粒，其中已经添加少量铟，铊，镓，铋，镉，锡和铅中的一种或多种铟或锌与锌预合金，使具有锌阳极的电化学电池中的腐蚀减少， 在形成单晶颗粒之前。 即使减少汞含量，也能获得协同降低的腐蚀速率和电池放气。

公开(公告)号：US4579791A

公开(公告)日：1986-04-01

申请号：US656802

申请日：1984-10-01

申请人： Chih-Chung Wang

发明人： Chih-Chung Wang

IPC分类号： C30B11/00 ,  H01M4/38 ,  H01M4/42 ,  H01M4/04

CPC分类号： C30B11/002 ,  C30B11/00 ,  C30B29/52 ,  C30B29/60 ,  H01M4/38

摘要： A method for making single crystals of metal or other crystallizing materials whereby powders of irregular shaped single crystal particles (as small as 325 mesh or about 50 microns) may be readily and economically made. Said method comprises the steps of: (a) forming thin individual coatings on each of said particles such as oxides of metals on metal particles; (b) melting the particle material within said coatings which function as individual particle crucibles; (c) cooling the melted particles within the coatings to form individual single crystals each within its own coating; and (d) removing the coating such as by solvation with a solvent or by chemical reaction. The single crystal particles conform to the original shape of the particles which may be irregular. Such irregular shaped single crystals, such as of zinc, when used in electrochemical cell anodes enables the utilization of reduced amounts of mercury for amalgamation thereof without significant increase in cell gassing.

摘要翻译： 制造金属或其它结晶材料的单晶的方法，由此可以容易且经济地制造不规则形状的单晶颗粒（小至325目或约50微米）的粉末。 所述方法包括以下步骤：（a）在每个所述颗粒上形成薄金属涂层，例如金属颗粒上的金属氧化物; （b）熔化所述涂层内的颗粒材料，其作为单独的颗粒坩埚; （c）冷却涂层内的熔融颗粒以在其自身的涂层内形成各自的单晶; 和（d）通过用溶剂溶剂化或通过化学反应除去涂层。 单晶颗粒符合可能是不规则的颗粒的原始形状。 这种不规则形状的单晶，例如锌，当用于电化学电池阳极时，可以利用减少量的汞进行合并，而不会显着增加电池放气。

公开(公告)号：US4227928A

公开(公告)日：1980-10-14

申请号：US901843

申请日：1978-05-01

申请人： Chih-Chung Wang

发明人： Chih-Chung Wang

IPC分类号： B22F1/02 ,  C22C32/00 ,  G21F1/00 ,  B22F5/00 ,  B22F3/00 ,  C22C29/00

CPC分类号： B22F1/025 ,  C22C32/0057 ,  G21F1/00 ,  Y10T428/12181

摘要： A process for manufacturing radiation shield structures of the type consisting of neutron absorbing boron carbide particles embedded in a copper matrix. The material comprises a multiplicity of particles comprising a core of boron carbide, a film of electroless copper bonded to the carbide, and a relatively thick electrodeposited copper layer bonded to the film. The particles are then consolidated to produce shield structures by hot rolling or hot pressing, with or without sintering.

摘要翻译： 一种用于制造由埋在铜基质中的中子吸收碳化硼颗粒构成的类型的辐射屏蔽结构的方法。 该材料包括多个包含碳化硼核心的颗粒，与碳化物结合的化学镀铜膜以及与该膜结合的较厚的电沉积铜层。 然后通过热轧或热压将颗粒固结以产生屏蔽结构，具有或不具有烧结。

公开(公告)号：US09105493B2

公开(公告)日：2015-08-11

申请号：US13476019

申请日：2012-05-21

申请人： Ming-Tsung Lee ,  Cheng-Hua Yang ,  Wen-Fang Lee ,  Chih-Chung Wang ,  Te-Yuan Wu

发明人： Ming-Tsung Lee ,  Cheng-Hua Yang ,  Wen-Fang Lee ,  Chih-Chung Wang ,  Te-Yuan Wu

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423

CPC分类号： H01L29/0878 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7816

摘要： A layout pattern of a high voltage metal-oxide-semiconductor transistor device includes a first doped region having a first conductivity type, a second doped region having the first conductivity type, and an non-continuous doped region formed in between the first doped region and the second doped region. The non-continuous doped region further includes a plurality of third doped regions, a plurality of gaps, and a plurality of fourth doped regions. The gaps and the third doped regions s are alternately arranged, and the fourth doped regions are formed in the gaps. The third doped regions include a second conductivity type complementary to the first conductivity type, and the fourth doped regions include the first conductivity type.

摘要翻译： 高电压金属氧化物半导体晶体管器件的布局图案包括具有第一导电类型的第一掺杂区域，具有第一导电类型的第二掺杂区域和形成在第一掺杂区域和第二掺杂区域之间的非连续掺杂区域 第二掺杂区域。 非连续掺杂区还包括多个第三掺杂区，多个间隙和多个第四掺杂区。 间隙和第三掺杂区域交替排列，并且第四掺杂区域形成在间隙中。 第三掺杂区域包括与第一导电类型互补的第二导电类型，并且第四掺杂区域包括第一导电类型。

公开(公告)号：US08987813B2

公开(公告)日：2015-03-24

申请号：US13571366

申请日：2012-08-10

申请人： Chiu-Te Lee ,  Ke-Feng Lin ,  Chih-Chien Chang ,  Wei-Lin Chen ,  Chih-Chung Wang

发明人： Chiu-Te Lee ,  Ke-Feng Lin ,  Chih-Chien Chang ,  Wei-Lin Chen ,  Chih-Chung Wang

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/08

CPC分类号： H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66704 ,  H01L29/7825

摘要： A high voltage metal-oxide-semiconductor transistor device includes a substrate, at least an isolation structure formed in the substrate, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective sides of the gate. The isolation structure further includes a recess. The gate includes a first gate portion formed on a surface of the substrate and a second gate portion downwardly extending from the first gate portion and formed in the recess.

摘要翻译： 高压金属氧化物半导体晶体管器件包括至少形成在衬底中的隔离结构的衬底，形成在衬底上的栅极，以及形成在栅极各侧的衬底中的源极区和漏极区。 隔离结构还包括凹部。 栅极包括形成在基板的表面上的第一栅极部分和从第一栅极部分向下延伸并形成在凹部中的第二栅极部分。