公开(公告)号：US20150001674A1

公开(公告)日：2015-01-01

申请号：US14486075

申请日：2014-09-15

Applicant: Micron Technology, Inc.

Inventor： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hull ,  Chris Carlson

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/56 ,  H01G4/10 ,  H01L27/108

Abstract: Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.

Abstract translation: 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

公开(公告)号：US08853682B2

公开(公告)日：2014-10-07

申请号：US14185094

申请日：2014-02-20

Applicant: Micron Technology, Inc.

Inventor： Neil Greeley ,  Gurtej Sandhu ,  John Smythe ,  Bhaskar Srinivasan

IPC: H01L29/06 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1658 ,  H01L45/1683

Abstract: Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

Abstract translation: 用于形成包含掺杂的硫族化物材料的存储器存取装置的自对准制造方法。 该方法可用于形成三维堆叠的交叉点存储器阵列。 该方法包括在第一导电电极上形成绝缘材料，图案化绝缘材料以形成暴露第一导电电极的部分的通孔，在绝缘材料的通孔内形成存储器访问装置，并在存储器访问上形成存储元件 设备，其中存储在所述存储器元件中的数据可经由所述存储器访问设备访问。 存储器存取装置由掺杂的硫族化物材料形成，并使用自对准制造方法形成。

公开(公告)号：US08796806B2

公开(公告)日：2014-08-05

申请号：US13929094

申请日：2013-06-27

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu ,  Bhaskar Srinivasan

IPC: H01L31/058 ,  H01L29/06

CPC classification number: H01L29/24 ,  H01L27/24 ,  H01L45/00

Abstract: A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.

Abstract translation: 包括二极管的二极管和存储器件，其中二极管包括导电部分和由第一材料形成的另一部分，该第一材料具有允许在向材料施加电压时第一次降低材料的电阻率的特性，从而允许电流 流过其中，并且具有允许第一材料的电阻率响应于第一材料的温度升高而第二次降低的特征。

公开(公告)号：US09275728B2

公开(公告)日：2016-03-01

申请号：US14132081

申请日：2013-12-18

Applicant: Micron Technology, Inc.

Inventor： Bhaskar Srinivasan ,  Gurtej S. Sandhu

IPC: G11C11/00 ,  G11C13/00 ,  H01L27/10 ,  H01L45/00

CPC classification number: G11C13/0002 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/12 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/52 ,  G11C2213/56 ,  G11C2213/77 ,  H01L27/101 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1206

Abstract: In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed.

Abstract translation: 一方面，操作存储单元的方法包括使用不同的电极来改变存储器单元的编程状态，而不是用于读取存储器单元的编程状态。 在一个方面，存储单元包括第一和第二相对电极，其间具有接收在其间的材料。 该材料具有彼此不同组成的第一和第二横向区域。 第一和第二横向区域中的一个沿着材料的两个横向相对的边缘中的一个被接收。 第一和第二横向区域中的另一个沿着材料的所述两个横向相对的边缘中的另一个被容纳。 第一和第二横向区域中的至少一个能够被重复编程至至少两个不同的阻力状态。 公开了其他方面和实现。

公开(公告)号：US09135995B2

公开(公告)日：2015-09-15

申请号：US14175030

申请日：2014-02-07

Applicant: Micron Technology, Inc.

Inventor： Bhaskar Srinivasan ,  Gurtej S. Sandhu

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0061 ,  G11C2013/0052 ,  G11C2213/72

Abstract: Some embodiments include methods of reading memory cells. The memory cells have a write operation that occurs only if a voltage of sufficient absolute value is applied for a sufficient duration of time; and the reading is conducted with a pulse that is of too short of a time duration to be sufficient for the write operation. In some embodiments, the pulse utilized for the reading may have an absolute value of voltage that is greater than or equal to the voltage utilized for the write operation. In some embodiments, the memory cells may comprise non-ohmic devices; such as memristors and diodes.

Abstract translation: 一些实施例包括读取存储器单元的方法。 存储器单元具有写入操作，只有当足够的绝对值的电压施加足够的持续时间时才发生; 并且读取是用太短的持续时间的脉冲来进行的，以足以用于写入操作。 在一些实施例中，用于读取的脉冲可以具有大于或等于用于写入操作的电压的绝对值。 在一些实施例中，存储器单元可以包括非欧姆器件; 如忆阻器和二极管。

公开(公告)号：US20150137065A1

公开(公告)日：2015-05-21

申请号：US14599924

申请日：2015-01-19

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Bhaskar Srinivasan

IPC: H01L45/00

CPC classification number: H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608

Abstract: Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode material than the second region, and has a greater oxygen concentration than the second region. The second metal oxide material includes a different metal than the first metal oxide material. Some embodiments include methods of forming memory cells in which oxygen is substantially irreversibly transferred from a region of a metal oxide material to an oxygen-sink material. The oxygen transfer creates a difference in oxygen concentration within one region of the metal oxide material relative to another.

Abstract translation: 一些实施例包括按顺序包含的存储器单元; 第一电极材料，第一金属氧化物材料，第二金属氧化物材料和第二电极材料。 第一金属氧化物材料具有至少两个相对于彼此的氧浓度不同的区域。 其中一个地区是第一个地区，另一个是第二个地区。 第一区域比第二区域更靠近第一电极材料，并且具有比第二区域更大的氧浓度。 第二金属氧化物材料包括与第一金属氧化物材料不同的金属。 一些实施例包括形成其中氧基本上不可逆地从金属氧化物材料的区域转移到氧沉降材料的存储单元的方法。 氧传递在金属氧化物材料的一个区域内的氧浓度相对于另一个产生差异。

公开(公告)号：US20140153316A1

公开(公告)日：2014-06-05

申请号：US14175030

申请日：2014-02-07

Applicant: Micron Technology, Inc.

Inventor： Bhaskar Srinivasan ,  Gurtej S. Sandhu

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0061 ,  G11C2013/0052 ,  G11C2213/72

Abstract: Some embodiments include methods of reading memory cells. The memory cells have a write operation that occurs only if a voltage of sufficient absolute value is applied for a sufficient duration of time; and the reading is conducted with a pulse that is of too short of a time duration to be sufficient for the write operation. In some embodiments, the pulse utilized for the reading may have an absolute value of voltage that is greater than or equal to the voltage utilized for the write operation. In some embodiments, the memory cells may comprise non-ohmic devices; such as memristors and diodes.

Abstract translation: 一些实施例包括读取存储器单元的方法。 存储器单元具有写入操作，只有当足够的绝对值的电压施加足够的持续时间时才发生; 并且读取是用太短的持续时间的脉冲来进行的，以足以用于写入操作。 在一些实施例中，用于读取的脉冲可以具有大于或等于用于写入操作的电压的绝对值。 在一些实施例中，存储器单元可以包括非欧姆器件; 如忆阻器和二极管。

公开(公告)号：US20140014946A1

公开(公告)日：2014-01-16

申请号：US13929094

申请日：2013-06-27

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Sandhu Gurtej ,  Bhaskar Srinivasan

IPC: H01L29/24

CPC classification number: H01L29/24 ,  H01L27/24 ,  H01L45/00

Abstract: A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.

Abstract translation: 包括二极管的二极管和存储器件，其中二极管包括导电部分和由第一材料形成的另一部分，该第一材料具有允许在向材料施加电压时第一次降低材料的电阻率的特性，从而允许电流 流过其中，并且具有允许第一材料的电阻率响应于第一材料的温度升高而第二次降低的特征。

公开(公告)号：US20150140773A1

公开(公告)日：2015-05-21

申请号：US14596037

申请日：2015-01-13

Applicant: Micron Technology, Inc.

Inventor： Vassil Antonov ,  Jennifer K. Sigman ,  Vishwanath Bhat ,  Matthew N. Rocklein ,  Bhaskar Srinivasan ,  Chris Carlson

IPC: H01L49/02 ,  H01L21/225 ,  H01L21/02

CPC classification number: H01L28/40 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/1236 ,  H01G4/1254 ,  H01G4/1272 ,  H01G4/306 ,  H01G4/33 ,  H01L21/02172 ,  H01L21/02356 ,  H01L21/225 ,  Y10T428/2495

Abstract: Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.

Abstract translation: 描述了形成绝缘元件的方法，包括形成具有第一介电常数的第一金属氧化物材料，形成具有与第一介电常数不同的第二介电常数的第二金属氧化物材料，并加热该结构的至少部分至少结晶 第一电介质材料和第二电介质材料中的至少一个的一部分。 描述了形成电容器的方法，包括形成第一电极，在第一电极上形成具有第一氧化物和第二氧化物的介电材料，以及在电介质材料上形成第二电极。 还描述了包括电介质材料的结构。

公开(公告)号：US08811063B2

公开(公告)日：2014-08-19

申请号：US13956242

申请日：2013-07-31

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Bhaskar Srinivasan ,  Gurtej S. Sandhu

IPC: G11C11/21 ,  G11C13/00 ,  G11C13/02 ,  G11C11/00

CPC classification number: H01L45/085 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2213/56 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146

Abstract: Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer.

Abstract translation: 一些实施例包括编程存储器单元的方法。 多个电荷载体可以在存储器单元内移动，其中跨越移动电荷载流子的绝对值大于2的平均电荷。一些实施例包括形成和编程基于离子传输的存储单元的方法。 堆叠形成为在第一和第二电极之间具有可编程材料。 可编程材料具有在可编程材料内移动的移动离子，以将可编程材料从一个存储器状态转换到另一个。 移动移动离子上的平均电荷具有大于2的绝对值。一些实施例包括在第一和第二电极之间具有可编程材料的存储单元。 可编程材料包括氮化铝第一层，并且包括含有与第一层共同的可移动离子物质的第二层。