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公开(公告)号：US09525341B2
公开(公告)日：2016-12-20
申请号：US14581710
申请日：2014-12-23
Applicant: Micron Technology, Inc.
Inventor： Feng Pan , Ramin Ghodsi
Abstract: Some embodiments include apparatuses having a switch regulator that includes a first circuit with a first comparator to compare an output of the switch regulator to a first reference voltage, and to provide a control signal to enable or disable a first pass element based on the comparison. The switch regulator includes at least a second circuit having a second comparator to compare an output of the switch regulator to a second reference voltage that is lower than the first reference voltage, and to provide a control signal to enable or disable a second pass element based on the comparison. The switch regulator does not include Miller compensation circuits. Other apparatuses and methods according to other embodiments are described.
Abstract translation: 一些实施例包括具有开关调节器的装置，该开关调节器包括具有第一比较器的第一电路，用于将开关调节器的输出与第一参考电压进行比较，并且基于该比较来提供控制信号以启用或禁用第一通过元件。 开关调节器至少包括具有第二比较器的第二电路，用于将开关调节器的输出与低于第一参考电压的第二参考电压进行比较，并且提供控制信号以使第二通过元件基于 比较。 开关稳压器不包括米勒补偿电路。 描述根据其他实施例的其他装置和方法。
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公开(公告)号：US09443610B1
公开(公告)日：2016-09-13
申请号：US14730372
申请日：2015-06-04
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Feng Pan , Shigekazu Yamada , Allahyar Vahidimowlavi , Jae-Kwan Park , Cairong Hu , Kalyan Kavalipurapu
CPC classification number: G11C29/025 , G01R31/025 , G11C16/0483 , G11C2029/1202 , G11C2029/5006
Abstract: A system includes a first switch, an amplifier, a second switch, and a capacitor. The first switch is electrically coupled between a first reference voltage and a node. The amplifier has a first input, a second input, and an output, the amplifier to receive a second reference voltage on the first input and a sample voltage on the second input. The second switch is electrically coupled between the output of the amplifier and the second input of the amplifier. The capacitor is electrically coupled between the second input of the amplifier and the node. The first switch and the second switch are closed to initialize the node to the first reference voltage and to initialize the amplifier in unity-gain configuration. The first switch and the second switch are opened to detect a leakage current by sensing a change in the sample voltage.
Abstract translation: 系统包括第一开关，放大器，第二开关和电容器。 第一开关电耦合在第一参考电压和节点之间。 放大器具有第一输入端，第二输入端和输出端，放大器用于在第一输入端接收第二参考电压，并在第二输入端接收采样电压。 第二开关电耦合在放大器的输出端和放大器的第二输入端之间。 电容器电耦合在放大器的第二输入端和节点之间。 关闭第一开关和第二开关以将节点初始化为第一参考电压并以单位增益配置初始化放大器。 打开第一开关和第二开关，通过感测样品电压的变化来检测泄漏电流。
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13.发明申请公开(公告)号：US20160163388A1
公开(公告)日：2016-06-09
申请号：US14558900
申请日：2014-12-03
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Feng Pan , Ramin Ghodsi
IPC: G11C16/10
CPC classification number: G11C16/10 , G11C16/0483 , G11C16/24 , G11C16/3427
Abstract: An embodiment of a method of programing might include applying a first voltage difference across a first memory cell to be programed, where applying the first voltage difference comprises applying a first channel bias voltage to a channel of the first memory cell, and applying a second voltage difference, substantially equal to the first voltage difference, across a second memory cell to be programed while applying the first voltage difference across the first memory-cell, where applying the second voltage difference comprises applying a second channel bias voltage to a channel of the second memory cell. The first channel bias voltage is different than the second channel bias voltage, and the first memory cell and the second memory cell are commonly coupled to an access line and are at different locations along a length of the access line.
Abstract translation: 编程方法的一个实施例可以包括在要编程的第一存储器单元上施加第一电压差，其中施加第一电压差包括将第一通道偏置电压施加到第一存储器单元的通道，以及施加第二电压 在施加第一电压差的同时在第一存储单元施加第一电压差的情况下跨越待编程的第二存储器单元的基本上等于第一电压差的差值，其中施加第二电压差包括将第二通道偏置电压施加到第二电压差的通道 记忆单元 第一通道偏置电压不同于第二通道偏置电压，并且第一存储器单元和第二存储单元通常耦合到接入线，并且沿着接入线的长度在不同的位置。
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公开(公告)号：US10854301B2
公开(公告)日：2020-12-01
申请号：US16182355
申请日：2018-11-06
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Feng Pan , Ramin Ghodsi , Qiang Tang
Abstract: Apparatuses and methods for reducing read disturb are described herein. An example apparatus may include a first memory subblock including a first select gate drain (SGD) switch and a first select gate source (SGS) switch, a second memory subblock including a second SGD switch and a second SGS switch, and an access line associated with the first and second memory subblocks. The apparatus may include a control unit configured to enable the first and second SGD switches and the first and second SGS switches during a first portion of a read operation and to provide a first voltage on the access line during the first portion. The control unit may be configured to disable the first SGD switch and the first SGS switches during a second portion of the read operation and to provide a second voltage on the access line during the second portion.
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公开(公告)号：US10134478B2
公开(公告)日：2018-11-20
申请号：US15436289
申请日：2017-02-17
Applicant: Micron Technology, Inc.
Inventor： Feng Pan , Ramin Ghodsi , Qiang Tang
Abstract: Apparatuses and methods for reducing read disturb are described herein. An example apparatus may include a first memory subblock including a first select gate drain (SGD) switch and a first select gate source (SGS) switch, a second memory subblock including a second SGD switch and a second SGS switch, and an access line associated with the first and second memory subblocks. The apparatus may include a control unit configured to enable the first and second SGD switches and the first and second SGS switches during a first portion of a read operation and to provide a first voltage on the access line during the first portion. The control unit may be configured to disable the first SGD switch and the first SGS switches during a second portion of the read operation and to provide a second voltage on the access line during the second portion.
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Patent Agency Ranking
公开(公告)号：US10033268B2
公开(公告)日：2018-07-24
申请号：US14796743
申请日：2015-07-10
Applicant: Micron Technology, Inc.
Inventor： Feng Pan , Michele Piccardi
Abstract: Certain embodiments of the present invention include an apparatus comprising a charge pump, configured to provide an output voltage at an output node of the charge pump, and a charge pump regulator circuit coupled to the charge pump. One such charge pump regulator circuit is configured to control the charge pump to increase the output voltage during a first period of time. Such a charge pump regulator circuit can also cause a node of a circuit coupled to the output node of the charge pump to reach a target voltage level during a second time period.
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公开(公告)号：US20180048234A1
公开(公告)日：2018-02-15
申请号：US15721985
申请日：2017-10-02
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Feng Pan
CPC classification number: H02M3/158 , G11C5/147 , G11C16/30 , H02M2001/0045
Abstract: A device includes a digital switch regulator to supply an output voltage and a first current to a load based on a reference voltage. The device also includes an analog circuit to supply a second current to the load in addition to the first current based on a duty cycle of the digital switch regulator.
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公开(公告)号：US09640271B2
公开(公告)日：2017-05-02
申请号：US14564821
申请日：2014-12-09
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Feng Pan , Xiaojiang Guo
Abstract: A low-dropout regulator includes an error amplifier to provide a control signal, a first transistor, and a second transistor. The first transistor receives the control signal and has a source-drain path electrically coupled between a supply voltage node and a load, the first transistor to power the load in response to a voltage on the supply voltage node rising above an absolute value of a threshold voltage of the first transistor. The second transistor has a source-drain path electrically coupled between the supply voltage node and the load, the second transistor to receive the control signal in response to the voltage on the supply voltage node rising above a particular voltage.
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公开(公告)号：US09607692B2
公开(公告)日：2017-03-28
申请号：US14868604
申请日：2015-09-29
Applicant: Micron Technology, Inc.
Inventor： Qiang Tang , Feng Pan , Ramin Ghodsi , Mark A. Helm
CPC classification number: G11C11/5642 , G11C7/14 , G11C29/021 , G11C29/028 , G11C2029/0409
Abstract: Apparatuses and methods for threshold voltage (Vt) distribution determination are described. A number of apparatuses can include sense circuitry configured to determine a first current on a source line of an array of memory cells, the first current corresponding to a first quantity of memory cells of a group of memory cells that conducts in response to a first sensing voltage applied to an access line and determine a second current on the source line, the second current corresponding to a second quantity of memory cells of the group that conducts in response to a second sensing voltage applied to the access line. The number of apparatuses can include a controller configured to determine at least a portion of a Vt distribution corresponding to the group of memory cells based, at least in part, on the first current and the second current.
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公开(公告)号：US09368212B1
公开(公告)日：2016-06-14
申请号：US14669705
申请日：2015-03-26
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Feng Pan , Qiang Tang
CPC classification number: G11C16/06 , G11C7/04 , G11C8/08 , G11C16/08 , G11C29/028 , G11C29/12 , G11C29/12005 , G11C29/50004 , G11C2029/1202 , G11C2029/5002
Abstract: A device includes an array of memory cells, a temperature sensor to provide a temperature output, and a circuit. The circuit provides a bias voltage to bias a node of the array of memory cells based on the temperature output, a first voltage component independent of a temperature coefficient of the memory cells, and a second voltage component dependent on the temperature coefficient of the memory cells. The first voltage component is determined at a first temperature and the second voltage component is determined at a second temperature less than the first temperature.
Abstract translation: 一种器件包括存储器单元阵列，用于提供温度输出的温度传感器和电路。 该电路提供偏置电压以基于温度输出偏置存储器单元阵列的节点，独立于存储器单元的温度系数的第一电压分量，以及取决于存储器单元的温度系数的第二电压分量 。 在第一温度下确定第一电压分量，并且在小于第一温度的第二温度下确定第二电压分量。
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