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公开(公告)号：US07084053B2
公开(公告)日：2006-08-01
申请号：US10676294
申请日：2003-09-30
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.
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公开(公告)号：US06566280B1
公开(公告)日：2003-05-20
申请号：US10227678
申请日：2002-08-26
IPC分类号： H01L2131
CPC分类号： G03F7/40 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/32139
摘要： Polymer features may be formed on a substrate by applying a polymer to a photoresist pattern which is subsequently removed to generate the desired polymer features.
摘要翻译： 聚合物特征可以通过将聚合物施加到光致抗蚀剂图案上而在基底上形成，随后将其除去以产生所需的聚合物特征。
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公开(公告)号：US08513111B2
公开(公告)日：2013-08-20
申请号：US11485078
申请日：2006-07-12
申请人： Robert P. Meagley , Kevin P. O'Brien , Tian-An Chen , Michael D. Goodner , James Powers , Huey-Chiang Liou
发明人： Robert P. Meagley , Kevin P. O'Brien , Tian-An Chen , Michael D. Goodner , James Powers , Huey-Chiang Liou
IPC分类号： H01L23/58
CPC分类号： H01L23/5222 , H01L21/02118 , H01L21/02134 , H01L21/02137 , H01L21/02164 , H01L21/0234 , H01L21/02351 , H01L21/312 , H01L21/76224 , H01L21/7682 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.
摘要翻译： 半导体结构可以被热分解膜覆盖。 然后该膜可以被密封盖覆盖。 随后，热分解材料可能被分解，形成空腔。
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公开(公告)号：US07361455B2
公开(公告)日：2008-04-22
申请号：US10815528
申请日：2004-03-31
IPC分类号： G03F7/36
摘要： Anti-reflective materials such as bottom anti-reflective coatings (BARC's) and sacrificial light absorbing materials (SLAM) may be made more effective at preventing coherent light or electron beam reflection from a substrate by including in the anti-reflective material an additive to alter the radiation beam path of the reflected light or electrons. The radiation beam path altering additive may be a reflective material or a refractive material. The inclusion of such a radiation beam bath altering additive may reduce line width roughness and increase critical dimension (CD) control of interconnect lines and vias.
摘要翻译： 防反射材料如底部抗反射涂层（BARC）和牺牲光吸收材料（SLAM）可以更有效地通过在抗反射材料中包含添加剂来改变基底的相干光或电子束反射，从而改变 反射光或电子的辐射束路径。 辐射束路径改变添加剂可以是反射材料或折射材料。 包含这种辐射束浴改变添加剂可以减小线宽粗糙度并增加互连线和通孔的临界尺寸（CD）控制。
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15.发明授权Electrospray and enhanced electrospray deposition of thin films on semiconductor substrates 有权在半导体衬底上的电喷雾和增强的电喷雾沉积薄膜公开(公告)号：US07259109B2
公开(公告)日：2007-08-21
申请号：US10947016
申请日：2004-09-22
申请人： Robert P. Meagley
发明人： Robert P. Meagley
IPC分类号： H01L21/469 , C23C4/00
摘要： A method of forming a thin film on a substrate to fabricate a microelectronic device, a microelectronic device comprising a thin film deposited according to the method, and a system comprising the microelectronic device. The thin film may include on of a low k thin film, a thin film comprising photoresist, and a sacrificial polymer. The method comprises dispersing a precursor preparation into a spray of charged droplets through subjecting the liquid precursor preparation to electrostatic forces; directing the charged droplets to move toward the substrate; and allowing the charged droplets to generate a beam of gas-phase ions as the charged droplets move toward the substrate. The method further includes directing the gas-phase ions to impinge upon the substrate to deposit the thin film thereon to yield a deposited thin film on the substrate.
摘要翻译： 一种在衬底上形成薄膜以制造微电子器件的方法，包括根据该方法沉积的薄膜的微电子器件以及包括该微电子器件的系统。 薄膜可以包括低k薄膜，包含光致抗蚀剂的薄膜和牺牲聚合物。 该方法包括通过使液体前体制剂经受静电力将前体制剂分散在带电液滴的喷雾中; 引导带电液滴朝向衬底移动; 并且随着带电液滴向衬底移动，允许带电液滴产生气相离子束。 该方法还包括引导气相离子冲击衬底以在其上沉积薄膜以在衬底上产生沉积的薄膜。
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公开(公告)号：US07241707B2
公开(公告)日：2007-07-10
申请号：US11060843
申请日：2005-02-17
申请人： Robert P. Meagley , Michael J. Leeson , Michael D. Goodner , Bob E. Leet , Michael L. McSwiney , Shan C. Clark
发明人： Robert P. Meagley , Michael J. Leeson , Michael D. Goodner , Bob E. Leet , Michael L. McSwiney , Shan C. Clark
IPC分类号： H01L21/469
CPC分类号： H01L21/76808 , G03F7/091 , H01L21/0276 , H01L21/31144 , H01L21/76822 , H01L21/76829 , H01L21/76834 , H01L21/76835
摘要： Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.
摘要翻译： 集成电路处理中的多层膜可以通过在半导体衬底上形成的单一组合物的相分离来形成。 然后将组合物诱导相分离成至少第一连续相和第二连续相。 组合物可以由相分离成不同连续层的两种或更多种组分形成。 组合物还可以是单一组分，其在活化时分解成两个或多个相分离成不同连续层的组分。 相分离可以用于形成例如牺牲光吸收材料（SLAM）和显影剂抗性皮肤，电介质层和硬掩模，光致抗蚀剂和抗反射涂层（ARC），应力缓冲涂层和 衬底封装上的保护层，以及光干涉层。
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公开(公告)号：US07235344B2
公开(公告)日：2007-06-26
申请号：US10881475
申请日：2004-06-30
CPC分类号： G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： A composition including a first moiety; and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that energy harvested at the second moiety may be transferred to the first moiety. An article of manufacture including a film including a first moiety and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that collectively the first and second moieties have an electron capture cross-section greater than the electron capture cross-section of the first moiety alone. A method including forming a film on a substrate including a first moiety and a different second moiety; exposing the film to photonic or charged particle radiation; and patterning the film.
摘要翻译： 包含第一部分的组合物; 以及能够从外部源收获能量的不同的第二部分，其中第二部分被定位成使得在第二部分收获的能量可以转移到第一部分。 包括包括第一部分和能够从外部源收集能量的不同第二部分的膜的制品，其中所述第二部分被定位成使得所述第一部分和所述第二部分的电子捕获截面大于所述电子 仅捕获第一部分的横截面。 一种方法，包括在包括第一部分和不同的第二部分的基底上形成膜; 将膜暴露于光子或带电粒子辐射; 并构图。
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公开(公告)号：US07214452B2
公开(公告)日：2007-05-08
申请号：US10289611
申请日：2002-11-07
申请人： James M. Powers , Robert P. Meagley
发明人： James M. Powers , Robert P. Meagley
IPC分类号： G03F9/00
CPC分类号： G03F1/62 , Y10T428/3154 , Y10T428/31544
摘要： Exposure systems may use pellicles made of perfluoropoly-ether. These materials may exhibit reduced darkening upon repeated exposures compared to other materials.
摘要翻译： 曝光系统可以使用由全氟聚醚制成的薄膜。 与其他材料相比，这些材料在反复曝光时可能表现出减少的变暗。
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公开(公告)号：US07101798B2
公开(公告)日：2006-09-05
申请号：US10715956
申请日：2003-11-17
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L21/31144 , H01L21/76802
摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This is particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.
摘要翻译： 描述了几种用于通过改变其组成以使其与周围电介质的蚀刻速率相匹配来调节牺牲光吸收材料（SLAM）的蚀刻速率的技术。 这在双镶嵌工艺中特别有用，其中SLAM填充通孔开口并与周围的电介质材料一起蚀刻以形成覆盖通孔开口的沟槽。
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公开(公告)号：US07071125B2
公开(公告)日：2006-07-04
申请号：US10947820
申请日：2004-09-22
申请人： Michael L. McSwiney , Huey-Chiang Liou , Michael D. Goodner , Robert E. Leet , Robert P. Meagley
发明人： Michael L. McSwiney , Huey-Chiang Liou , Michael D. Goodner , Robert E. Leet , Robert P. Meagley
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02222 , C23C16/22 , H01L21/02123 , H01L21/02203 , H01L21/02211 , H01L21/3125 , H01L21/3185
摘要： A method including introducing a precursor in the presence of a circuit substrate, and forming a film including a reaction product of the precursor on the substrate, wherein the precursor includes a molecule comprising a primary species of the film and a modifier. A method including introducing a precursor in the presence of a circuit substrate, the precursor including a primary species and a film modifier as a single source, and forming a film on the circuit substrate. An apparatus including a semiconductor substrate, and a film on a surface of the semiconductor substrate, the film including a reaction product of a precursor including a molecule comprising a primary species and a modifier.
摘要翻译： 一种方法，包括在存在电路基板的情况下引入前体，以及形成包含所述前体在所述基底上的反应产物的膜，其中所述前体包括包含所述膜的主要种类和改性剂的分子。 一种方法，包括在存在电路基板的情况下引入前体，所述前体包括作为单一源的主要物质和膜改性剂，以及在所述电路基底上形成膜。 一种包括半导体衬底和半导体衬底的表面上的膜的设备，所述膜包括包含主要物质和改性剂的分子的前体的反应产物。
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