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    Method for fabricating a magnetic transducer using a slurry with spherical particles for CMP-assisted photoresist lift-off
    11.
    发明申请
    Method for fabricating a magnetic transducer using a slurry with spherical particles for CMP-assisted photoresist lift-off 审中-公开
    使用具有用于CMP辅助光致抗蚀剂剥离的球形颗粒的浆料制造磁换能器的方法

    公开(公告)号：US20060025053A1

    公开(公告)日：2006-02-02

    申请号：US10909127

    申请日：2004-07-30

    申请人： Marie-Claire Cyrille ,  Frederick Dill ,  Jui-Lung Li

    发明人： Marie-Claire Cyrille ,  Frederick Dill ,  Jui-Lung Li

    IPC分类号： B24B1/00

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F41/308 ,  Y10T29/49032

    摘要： A method is described which uses a CMP slurry with an abrasive of spherical particles to lift-off photoresist used in the patterning of the sensor for a magnetic transducer. The spherical particles are preferably silica, alumina, titania or zirconia with colloidal silica being preferred. The size of the particle is preferably less than 0.015 microns. The pH is preferably alkaline and even more preferably with a pH of about 10-11. In a method according to the invention a CPP sensor structure width or height is defined according to the prior art by removing excess sensor material at opposite sides of the sensor structure to form voids to define the track width or stripe height. The photoresist used to protect the selected area of the sensor structure is lifted-off using the slurry.

    摘要翻译： 描述了一种方法，其使用具有球形颗粒磨料的CMP浆料来剥离用于磁传感器的传感器的图案化中使用的光致抗蚀剂。 球形颗粒优选为二氧化硅，氧化铝，二氧化钛或具有胶体二氧化硅的氧化锆。 颗粒的尺寸优选小于0.015微米。 pH优选为碱性，甚至更优选pH为约10-11。 在根据本发明的方法中，根据现有技术通过在传感器结构的相对侧移除多余的传感器材料来形成CPP传感器结构的宽度或高度，以形成空隙以限定轨迹宽度或条纹高度。 用于保护传感器结构的选定区域的光致抗蚀剂使用浆料被剥离。

    Method to fabricate side shields for a magnetic sensor
    13.
    发明授权
    Method to fabricate side shields for a magnetic sensor 失效
    制造磁性传感器侧面屏蔽的方法

    公开(公告)号：US07574791B2

    公开(公告)日：2009-08-18

    申请号：US11126508

    申请日：2005-05-10

    申请人： Satoru Araki ,  Robert Stanley Beach ,  Marie-Claire Cyrille ,  Wipul Pemsiri Jayasekara ,  Quang Le ,  Jui-Lung Li ,  David John Seagle ,  Howard Gordon Zolla

    发明人： Satoru Araki ,  Robert Stanley Beach ,  Marie-Claire Cyrille ,  Wipul Pemsiri Jayasekara ,  Quang Le ,  Jui-Lung Li ,  David John Seagle ,  Howard Gordon Zolla

    IPC分类号： G11B5/187

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G11B5/112 ,  G11B5/3169 ,  G11B5/3906 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

    摘要翻译： 一种用于制造用于磁头的MR传感器的磁性侧屏蔽的方法。 在MR传感器层的沉积之后，沉积第一DLC层。 然后沉积铣削掩模层，并且去除铣削掩模层的外部，使得铣削掩模层的剩余中心部分形成为具有直的侧壁并且没有底切。 然后去除传感器层的外部部分，使得铣削掩模的相对较厚的剩余中心部分位于剩余传感器层的上方。 沉积薄的电绝缘层，随后沉积磁性侧屏蔽层。 沉积第二DLC层，然后利用化学机械抛光（CMP）剥离步骤除去剩余的掩模层。 此后，去除第一DLC层和第二DLC层，然后在其上制造第二磁屏蔽层。

    Method for patterning a magnetoresistive sensor
    15.
    发明申请
    Method for patterning a magnetoresistive sensor 有权
    图案化磁阻传感器的方法

    公开(公告)号：US20060101636A1

    公开(公告)日：2006-05-18

    申请号：US10993499

    申请日：2004-11-18

    申请人： Marie-Claire Cyrille ,  Elizabeth Dobisz ,  Wipul Jayasekara ,  Jui-Lung Li

    发明人： Marie-Claire Cyrille ,  Elizabeth Dobisz ,  Wipul Jayasekara ,  Jui-Lung Li

    IPC分类号： G11B5/127 ,  H04R31/00

    CPC分类号： G11B5/3903 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A method for constructing a magnetoresistive sensor using an etch mask that is resistant to the material removal process used to define the sensor width and stripe height. The method may include the use of a Ta etch mask formed under a photoresist mask, and the use of an ion milling process to define the sensor. The etch mask remains substantially intact after performing the ion milling and therefore is readily removed by a later CMP process. The etch mask layer is also very resistant to high temperatures such as those used in a desired atomic layer deposition of alumina, which is used to deposit conformal layers of alumina around the sensor.

    摘要翻译： 一种用于构造使用耐蚀刻材料去除工艺的蚀刻掩模的磁阻传感器的方法，所述方法用于限定传感器宽度和条纹高度。 该方法可以包括使用形成在光致抗蚀剂掩模下的Ta蚀刻掩模，以及使用离子铣削工艺来限定传感器。 在执行离子研磨之后，蚀刻掩模基本上保持完整，因此通过稍后的CMP工艺容易地除去。 蚀刻掩模层也非常耐高温，例如用于期望的氧化铝原子层沉积中使用的那些，其用于在传感器周围沉积保形层的氧化铝。

    CMP assisted liftoff micropatterning
    16.
    发明授权
    CMP assisted liftoff micropatterning 失效

    公开(公告)号：US06858909B2

    公开(公告)日：2005-02-22

    申请号：US10307093

    申请日：2002-11-29

    申请人： Marie-Claire Cyrille ,  Frederick H. Dill ,  Cherngye Hwang ,  Jui-Lung Li

    发明人： Marie-Claire Cyrille ,  Frederick H. Dill ,  Cherngye Hwang ,  Jui-Lung Li

    IPC分类号： G11B5/39 ,  G11B5/31 ,  H01L21/304 ,  H01L43/08 ,  H01L27/14

    CPC分类号： G11B5/313

    摘要： A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.

    SPIN-VALVE OR TUNNEL-JUNCTION RADIO-FREQUENCY OSCILLATOR
    20.
    发明申请
    SPIN-VALVE OR TUNNEL-JUNCTION RADIO-FREQUENCY OSCILLATOR 有权
    旋转阀或隧道式无线电频率振荡器

    公开(公告)号：US20100134196A1

    公开(公告)日：2010-06-03

    申请号：US12620922

    申请日：2009-11-18

    申请人： Marie-Claire Cyrille ,  Bertrand Delaet ,  Jean-Francois Nodin ,  Veronique Sousa

    发明人： Marie-Claire Cyrille ,  Bertrand Delaet ,  Jean-Francois Nodin ,  Veronique Sousa

    IPC分类号： H03B5/40

    CPC分类号： H01F41/305 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3286 ,  H01L43/08 ,  H03B15/006

    摘要： This radio-frequency oscillator includes a magnetoresistive device in which an electric current is able to flow. The magnetoresistive device includes a first magnetic layer, known as a “trapped layer”, whereof the magnetization is of fixed direction. The magnetoresistive device further includes a second magnetic layer known as a “free layer” and a non-magnetic layer, known as an “intermediate layer”, interposed between the first and second layer, known as the intermediate layer. The oscillator further includes means capable of causing an electron current to flow in said layers constituting the aforementioned stack and in a direction perpendicular to the plane which contains said layers. One of the three layers constituting the magnetoresistive device includes at least one constriction zone of the electric current passing through it.

    摘要翻译： 该射频振荡器包括其中电流能够流动的磁阻器件。 磁阻器件包括称为“俘获层”的第一磁性层，其磁化方向为固定方向。 磁阻器件还包括被称为“自由层”的第二磁性层和被称为“中间层”的非磁性层，介于第一和第二层之间，被称为中间层。 振荡器还包括能够使电子流在构成上述叠层的层中并且在垂直于包含所述层的平面的方向上流动的装置。 构成磁阻器件的三层之一包括至少一个通过它的电流的收缩区域。