Power module circuit board and a process for the manufacture thereof
    11.
    发明授权
    Power module circuit board and a process for the manufacture thereof 失效
    电源模块电路板及其制造方法

    公开(公告)号:US6013357A

    公开(公告)日:2000-01-11

    申请号:US917328

    申请日:1997-08-25

    摘要: A conductor pattern is formed on at least one surface of an AlN- or Si.sub.3 N.sub.4 -based ceramic substrate which is such that the ratio between the principal metal component binding with N to form the ceramic mass and the B in the BN remaining on the surface layer is no more than 50.times.10.sup.-6 as either B/Al or B/Si, wherein B/Al represents the ratio of I.sub.B to I.sub.Al where I.sub.B is the X-ray diffraction intensity of boron present on the surface layer and I.sub.Al is the X-ray diffraction intensity of aluminum, and B/Si represents the ratio of I.sub.B to I.sub.Si where I.sub.B is as defined above and I.sub.Si is the X-ray diffraction intensity of silicon. The thus produced circuit board has both a peel strength of at least 30 kg/mm.sup.2 and a capability of withstanding at least 30 heat cycles and, hence, satisfies the performance requirements of the recent models of power module ceramic circuit boards.

    摘要翻译: 在AlN或Si3N4基陶瓷基板的至少一个表面上形成导体图案,使得与N结合的主要金属成分与陶瓷块之间的比例和残留在表面层上的BN中的B B / Al或B / Si不超过50×10 -6,其中B / Al表示IB与IA1的比例,其中IB是表面层上存在的硼的X射线衍射强度,IA 1是X- 铝的射线衍射强度,B / Si表示IB与ISi的比例,其中IB如上所定义,ISi是硅的X射线衍射强度。 由此制造的电路板具有至少30kg / mm 2的剥离强度和耐受至少30次热循环的能力,因此满足最近型号的功率模块陶瓷电路板的性能要求。

    Metal-ceramic composite substrate
    14.
    发明授权
    Metal-ceramic composite substrate 失效
    金属陶瓷复合基板

    公开(公告)号:US6071592A

    公开(公告)日:2000-06-06

    申请号:US898880

    申请日:1997-07-23

    摘要: A metal-ceramic composite circuit substrate having a ceramic substrate and a metal plate joined to at least one main surface of the ceramic substrate, the rate of voids formed on at least a joint surface at a semiconductor mounting portion of the metal plate per unit surface area being not more than 1.49%. The diameter of void formed on at least the joint surface at a semiconductor mounting portion of the metal plate is not larger than 0.7 mm. The surface undulation of the ceramic substrate is not more than 15 .mu.m/20 mm measured by a surface roughness tester in case that the ceramic substrate is joined directly to the metal plate. The metal plate is joined to the ceramic substrate through a brazing material containing at least one active metal selected from a group consisting of Ti, Zr, Hf and Nb. The ceramic substrate is at least one kind of ceramic substrate selected from a group consisting of Al.sub.2 O.sub.3, AlN, BeO, SiC, Si.sub.3 N.sub.4 and ZrO.sub.2.

    摘要翻译: 一种金属陶瓷复合电路基板,其具有与陶瓷基板的至少一个主面接合的陶瓷基板和金属板,在每单位表面的金属板的半导体安装部的至少接合面上形成的空隙率 面积不超过1.49%。 在金属板的半导体安装部的至少接合面上形成的空隙的直径不大于0.7mm。 在将陶瓷基板直接接合到金属板的情况下,通过表面粗糙度测量仪测量陶瓷基板的表面起伏不超过15μm/ 20mm。 金属板通过含有选自Ti,Zr,Hf和Nb中的至少一种活性金属的钎焊材料与陶瓷基板接合。 陶瓷基板是选自Al 2 O 3,AlN,BeO,SiC,Si 3 N 4和ZrO 2中的至少一种陶瓷基板。